TA 2453 Search Results

Contextual Info: CMOS CSI 0.5 micron Process OPERATING LIFE @ TA = +125C AT RATED VOLTAGE 7/14/2010 Device MIC2003 1.2YM5 MIC2004 0.8YM5 MIC2005A 1YM6 MIC2005A 2YM6 MIC2005A 1YM6 MIC2005A 2YM6 MIC2005M 0.8YM5 MIC2005M 0.5YM6 MIC2005 0.5BM6 MIC2006 1.2BM6 MIC2007 YM6 MIC2007 YM6

an 7591

Abstract: 4484 D1069N D1809N D269N D3301N D749N D849N
Contextual Info: ~ ~ ~ B6 - Schaltung Anschlußspannung 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 1350 V 3600 V Kühlblöcke für verstärkte Luftkühlung Verlustl. P d Luftmen. v L Schaltung pro KB - Temp. tA Satzstrom Id Diode D [°C]

D1809N

Abstract: D1069N D269N D3301N D749N D849N 836 DIODE
Contextual Info: M2 - Schaltung ~ M2K ~ Anschlußspannung 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 440 V 3600 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id [°C] [A] Verlustl. P d Luftmen. v L Schaltung pro KB [W] Diode

Thyristor 1568

Abstract: D1069N D1809N D269N D3301N D749N D849N T 3361 D
Contextual Info: B2 - Schaltung ~ Anschlußspannung 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 910 V 3600 V + - Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id [°C] [A] Verlustl. P d Luftmen. v L Schaltung pro KB [W] Diode D

an 7591

Abstract: D1069N D1809N D269N D3301N D749N D849N p 4433
Contextual Info: B6 - Schaltung ~ ~ ~ Anschlußspannung 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 1350 V 3600 V Kühlblöcke für Luftselbstkühlung - Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D [°C] [A]

9716 diode

Abstract: an 7591 8906 D1809N D1069N D269N D3301N D749N D849N
Contextual Info: B6 - Schaltung ~ ~ ~ Anschlußspannung 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 1350 V 3600 V Kühlblöcke für Luftselbstkühlung - Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D [°C] [A]

an 7591

Abstract: D1809N 2967 DIODE 1336 s 1298 TA 7310 D1069N D269N D3301N D749N
Contextual Info: ~ ~ ~ B6 - Schaltung Anschlußspannung 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 1350 V 3600 V Kühlblöcke für verstärkte Luftkühlung Verlustl. P d Luftmen. v L Schaltung pro KB - Temp. tA Satzstrom Id Diode D [°C]

13012

Abstract: D1029N D748N T1059N T1589N T308N T458N T459N T709N K50 DIODE
Contextual Info: B2H - Schaltung ~ Anschlußspannung 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 630 V 2200 V + - Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id [°C] [A] 35 40 45 50 55 60 100 146 180 221 271 342 414 478 533

ICAN-6267

Abstract: ICAN-6739 CD4025AE vacuum tube applications data book ICAN-6716 CD4061AD transistor bf 175 CD4040AF ican 6539 CD4059AD
Contextual Info: mItC J I COS/MOS Integrated Circuits This D A TA B O O K contains complete data and related application notes on COS/MOS digital integrated circuits presently available from RCA Solid State Division as standard products. For ease of type selection, functional diagrams are shown

1740Q

Contextual Info: CPClare ITC117P Application Note CORPORATION ITC117P Application Note CP C lare’s Integrated Telecom Circuit ITC117P features com bined circuitry in one 16-Pin SOIC package for: • 1 Form A S o lid S ta te R e lay fo r use as Hookswitch ■ Bridge Rectifier

U-DFN2020-6

Contextual Info: DMN2013UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON MAX Package ID TA = +25°C • 0.6mm profile – ideal for low profile applications  PCB footprint of 4mm 11m @ VGS = 4.5V U-DFN2020-6 10.5A  Low Gate Threshold Voltage 13mΩ @ VGS = 2.5V

103-261

Abstract: 6605 T1059N T1589N T2159N T308N T458N T459N T709N
Contextual Info: B2C - Schaltung ~ Anschlußspannung 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 630 V 2200 V Temp. tA Satzstrom Id [°C] [A] 35 40 45 50 55 60 100 146 180 221 271 342 414 478 533 639 93 138 171 209 258 325 392 452 502

N6 marking diode

Contextual Info: DMN2013UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET V BR DSS Features and Benefits RDS(ON) max ID max TA = 25°C 11mΩ @ VGS = 4.5V 10.5A 13mΩ @ VGS = 2.5V 9.4A • • • • • • • 20V 0.6mm profile – ideal for low profile applications 2 PCB footprint of 4mm

1981-R

Abstract: LAA110 LAA120 LBA110 LBA120 LBB110 LBB120 LCC110 LCC120 OAA160
Contextual Info: OptoMOS AC/DC Solid S ta te S w itch es E ngineering S pecifications LA A 110 LAA120 350 250 LBA110 LBA120 LBB110 LBB120 LCC110 LCC120 OAA160 350 250 350 250 250 Output C haracteristics Peak B locking V 350 250 C ontinuous Rated Load (m A)* 120 170 120 170

marking n6

Contextual Info: DMN2013UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET V BR DSS Features and Benefits RDS(ON) max ID max TA = 25°C 11mΩ @ VGS = 4.5V 10.5A 13mΩ @ VGS = 2.5V 9.4A • • • • • • • 20V 0.6mm profile – ideal for low profile applications 2 PCB footprint of 4mm

Contextual Info: DMN2013UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET V BR DSS Features and Benefits RDS(ON) max ID max TA = 25°C 11mΩ @ VGS = 4.5V 10.5A 13mΩ @ VGS = 2.5V 9.4A • • • • • • • 20V 0.6mm profile – ideal for low profile applications 2 PCB footprint of 4mm

Contextual Info: DMN2013UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 11mΩ @ VGS = 4.5V 10.5A 13mΩ @ VGS = 2.5V 9.4A • • • • • • • 20V 0.6mm profile – ideal for low profile applications 2 PCB footprint of 4mm

TIL Display

Contextual Info: OPERATING MANUAL Industrial Products A DIVISION OF NORTH AMERICAN AVIATION, I NC. 3 5 8 4 W IL S H IR E BOULEVARD, LOS ANG ELES 5, CALIFORNIA 1336 OPERATING MANUAL FOR RECOMP II The in f o r m a tio n c o n ta in e d in this m a n u a l is g e n e r a lly a p p lic a b le

Contextual Info: MITSUBISHI LSIs <DRAM MODULE} FAST PAGE MODE DYNAMIC RAM 16M x9 1 4 4 MBIT M ax. A cce ss Type nam e L o a d m e m o ry tim e O u tw a rd d im e n s io n s W x H x D m m D a ta sheet page (n s ) MH16M09ASDP-5 ★ ★ 50 MH16M09ASDP-6 ★ ★ 60 MH16M09ASDP-7

DIC22

Contextual Info: _ CYM1441 SEMICONDUCTOR 256K x 8 Static RAM Module F eatures F unctional D escription • T h e C Y M 1441 is a very h ig h p e rfo rm a n c e 2 -m e g ab it s ta tic R A M m o d u le o rg a n iz e d as 256K w ords by 8 bits. T h e m o d u le is c o n ­

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

ferranti ula

Abstract: pia 6820 yx 805 led driver IC CD 4440 cs pic RAM 2102 RADIO SHACK PARTS CROSS REF 74L73 8251 UNIVERSAL SYNCHRONOUS ASYNCHRONOUS RECEIVER yx 801 led driver 1702a eprom
Contextual Info: O <D & P o O o o ^ 0 3 1 0897-X $ 1 4.50 THE S-100 BUS HANDBOOK Dave Bursky H e r e ’s a c o m p re h e n s iv e b o o k th a t d is c u s s e s th e S -1 0 0 bus e q u ip m e n t an d h o w it is o rg a n iz e d . It c o v e rs c o m p u te r fu n d a m e n ta ls , b a s ic e le c tro n ic s ,

TBB1458B

Abstract: TBB 1458 tAe 1458 TBB1458 A2211 2453 TAE 2453 a TA 2453 2453g Q67000-A2108
Contextual Info: TAE 2453 TAF 2453 Dual PNP-Operational Amplifiers Bipolar IC Features ● ● ● ● ● ● ● ● ● ● Supply voltage range between 3 V and 36 V Low current consumption, 0.8 mA typ. Extremely large control range Low output saturation voltage, almost independent of load current

TAE2453A

Abstract: Siemens A 1458 TAE 2453 a 2453A 2453b 2453 TAF2453A VPS05I21
Contextual Info: SIEMENS TAE 2453 TAF 2453 Dual PNP Operational Amplifiers B ip olar 1C F eatures • • • • • • • • • • S upply vo lta g e range betw een 3 V and 36 V Low cu rre n t co n su m p tio n , 0.8 m A typ. E xtre m e ly large control range Low o u tpu t saturation voltage,