TA 7250 Search Results

trumeter 7250

Abstract: trumeter M261NX 4 pin din DIN CONNECTION adaptor AC to DC ScansUX67
Contextual Info: 5-240V Adaptor Module 7250 DIN SPECIFICATION: Timing Inputs: 5 to 48V AC /D C and 48 to 240V AC/DC 50mS m in pulse length. Input Impedance: 5 to 48V input: 10Kohm 48 to 240V input: 58.5K ohm Reset input: C ontact closure only via external volt free co nta ct. 15mS (m in) co n ta ct ON time.

2SJ616

Contextual Info: 2SJ616 Ordering number : EN7270B P-Channel Silicon MOSFET 2SJ616 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage

2SJ628

Contextual Info: 2SJ628 Ordering number : EN7271A P-Channel Silicon MOSFET 2SJ628 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage

0705V

Abstract: SMO0705V
Contextual Info: SMO 0705V Hybrid MIC Module Use TENTATIVE • Data communications VCO Voltage Controlled Oscillator module. Absolute Maximum Ratings/Ta=25°C Parameter Conditions Symbol Ratings unit 6 V Operating Current Voltage VD Control Voltage VC 15 V Operating Temperature

Teradyne connector 72 pin

Contextual Info: H D M /H U M 2 mm Backplane Interconnection System ^ H ig h -d e n s ity 2 m m c o n t a c t sp a c in g : 2 0 c o n ta c ts p er lin e a r c m * S ta n d a r d a n d s h ie ld e d d a u g h te r b o a r d c o n n e c t o r o p t io n s v M o d u la r c o m p o n e n t s for

AD2033

Contextual Info: PHOTO RELAY TLP795G TLP795G TELECOMM UNICATION D A TA ACQUISITION MEASUREMENT INSTRUMENTATION The TOSHIBA TLP795G consists of a n a lum inum gallium arsenide infrared em ittin g diode optically coupled to a photo-MOS FE T in a six lead plastic DIP package.

j652

Contextual Info: Ordering number : EN7625A 2SJ652 P-Channel Power MOSFET http://onsemi.com –60V, –28A, 38mΩ, TO-220F-3SG Features • • • ON-resistance RDS on 1=28.5mΩ(typ.) Input capacitance Ciss=4360pF (typ.) 4V drive Specifications Absolute Maximum Ratings at Ta=25°C

Contextual Info: Ordering number : EN7681B 2SK3703 N-Channel Power MOSFET 60V, 30A, 26mΩ, TO-220F-3SG http://onsemi.com Features • • ON-resistance RDS on 1=20mΩ (typ.) 4V drive • Input capacitance Ciss=1780pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET S8855 Power GaAs FETs Chip Form Features • High power - P1dB = 31.5 dBm at f= 15 GHz • High gain - G idB = 6.5 dB a tf = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)

Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG25Q2YS91 GTR Module Unit in mm Silicon N Channel IGBT «-FA ST-O N -TA B ♦100 High Power Switching Applications Motor Control Applications F e a tu re s • High input im pedance • High speed: tf = 1 .0|is Max.

Contextual Info: TOSHIBA INSULATED GATE BIPO LAR TRAN SISTO R MG50Q2YS91 GTR Module Unit in mm Silicon N Channel IGBT 4-FA ST-O N -TA B * 100 High Power Switching Applications Motor Control Applications Features • High input impedance • High speed: tf = 1 .Ops Max. • Lo w saturation:

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET S8835 Power GaAs FETs Packaged Features • High power - P 1dB = 24 dBm at f = 8 GHz • High gain - G-,dB = 8 dB at f = 8 GHz • Suitable for C-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET S8851 Power GaAs FETs Chip Form Features • High power - PidB = 24 dBm a tf = 15 GHz • High gain - G-|dB —8 dB at f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)

TLP595A

Abstract: TLP595 E67349 11-9A1
Contextual Info: PHOTO RELAY TLP595A T L P 5 9 5 A TELECOMM UNICATION D A TA ACQUISITION MEASUREMENT INSTRUMENTATION The TOSHIBA TLP595A consists of an alum inum gallium arsenide infrared e m itting diode optically coupled to a photo-MOS FET in a six lead plastic D IP package.

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET S8836A Power GaAs FETs Chip Form Features •H ig h power - Pld B = 29.5 dBm at f = 8 GHz • High gain - G-|dB = 7.5 dB at f = 8 GHz • Suitable for C-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET S8838A Power GaAs FETs Chip Form Features • High power - P-idB = 33.5 dBm at f = 8 GHz • High gain - G 1dB = 5.5 dB at f = 8 GHz • Suitable for C-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET S8837A Power GaAs FETs Chip Form Features • High power - Pi(jB = 32 dBm at f = 8 GHz • High gain - G-|dB = 7 dB at f = 8 GHz • Suitable for C-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)

TPM1617

Abstract: TPM1617-8
Contextual Info: High Power GaAs FET L, S-Band TPM1617-8 FEATURES: • HIGH POWER P ld B = 39.5 dBm at 1.6 GHz to 1 .7GHz ■ PARTIALLY MATCHED TYPE ■ HIGH GAIN GldB = 13 dB at 1.6 GHz to 1.7 GHz ■ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS (Ta = 25°C)

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET S8853 Power GaAs FETs Chip Form Features • High power - P idB = 28 dBm at f= 15 GHz • High gain - GidB = 7 dB at f = 15 GHz • Suitable for Ku-Bar\d amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)

TPM1617-16

Abstract: TPM1617
Contextual Info: TPM1617-16 FEATURES: • HIGH POWER PldB = 42.5 dBm at 1.6 GHz to 1 .7 GHz > PARTIALLY MATCHED TYPE ■ HIGH GAIN GldB = 1 3 d B at 1,6 GHz to 1.7 GHz ■ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta = 25°C CHARACTERISTICS Output Power at 1 dB Com­

JS8836A-AS

Contextual Info: JS8836A-AS FEATURES: • HIGH POWER PldB = 29.5 dBm at f = 8 GHz ■ SUITABLE FOR C-BAND AMPLIFIER IOIM IMPLANTATION HIGH GAIN G1dB = 7 5 dB at f = 8 GHz ■ CHIP FORM RF PERFORMANCE SPECIFICATIONS Ta = 25° CÌ TYPE NUMBER JS8836A -A S (CHIP CHARACTERISTIC SYMBOL

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET JS8894-AS Power GaAs FETs Chip Form Features • High power - P1(jB = 27.0 dBm at f = 23 GHz • High gain - G1dB = 6.0 dB at f = 23 GHz • Suitable for Ku-Band amplifier • Ion implantation • Chip form RF Performance Specifications (Ta = 25° C)

A1203

Abstract: JS8851-AS MW1011
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET JS8851-AS Power GaAs FETs Chip Form Features • High power - P1dB = 24 dBm at f = 15 GHz • High gain - G1dB = 8 dB at f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation • Chip form RF Performance Specifications (Ta = 25° C)

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET JS8837A-AS Power GaAs FETs Chip Form Features • High power - P idB = 32 dBm at f = 8 GHz • High gain - G1dB = 7 dB at f = 8 GHz • Suitable for C-Band amplifier • Ion implantation • Chip form RF Performance Specifications (Ta = 25° C)