TA09833 Search Results

F15P06

Abstract: RFD15P06SM9A RFD15P06 RFD15P06SM RFP15P06 TB334
Contextual Info: RFD15P06, RFD15P06SM, RFP15P06 Data Sheet July 1999 15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs • 15A, 60V Formerly developmental type TA09833. • rDS ON = 0.150Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve

D15P05

Abstract: RFP15P05 RFD15P05 RFD15P05SM RFD15P05SM9A TB334
Contextual Info: RFD15P05, RFD15P05SM, RFP15P05 Data Sheet July 1999 15A, 50V, 0.150 Ohm, P-Channel Power MOSFETs • 15A, 50V Formerly developmental type TA09833. • rDS ON = 0.150Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve

D15P05

Abstract: RFD15P05 RFP15P05
Contextual Info: in te r« ! RFD15P05, RFD15P05SM, RFP15P05 D a ta S h e e t J u ly 1 9 9 9 15A, SOV, 0.150 Ohm, P-Channel Power MOSFETs Features Formerly developmental type TA09833. PACKAGE * rDS ON = 0-1500 ♦ Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve

D15P05

Contextual Info: * f* 3 2 S RFD15P05, RFD15P05SM, RFP15P05 -15A, -50V, 0.150 Ohm, P-Channel Power MOSFETs September 1998 Features Description • -15A,-50V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives opti­

RFP15P05

Abstract: RFD15P05SM RFD15P05 RFD15P05SM9A F15P05
Contextual Info: RFD15P05, RFD15P05SM, RFP15P05 S E M I C O N D U C T O R 15A, 50V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Packaging Features JEDEC TO-220AB • 15A, 50V SOURCE DRAIN GATE • rDS ON = 0.150Ω • Temperature Compensating PSPICE Model

D15P05

Abstract: RFP15P05 RFD15P05 RFD15P05SM TB334 d15p0 rfd15 D15p05 harris
Contextual Info: [ /Title RFD15 P05, RFD15 P05SM, RFP15 P05 /Subject (15A, 50V, 0.150 RFD15P05, RFD15P05SM, RFP15P05 Semiconductor -15A, -50V, 0.150 Ohm, P-Channel Power MOSFETs September 1998 Features Description • -15A, -50V These are P-Channel power MOSFETs manufactured using

F15P06

Abstract: RFD15P06 RFD15P06SM RFD15P06SM9A RFP15P06 TB334
Contextual Info: RFD15P06, RFD15P06SM, RFP15P06 Data Sheet January 2002 15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs Features • 15A, 60V These P-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives

2671I

Abstract: D15P05 RFP15P05 673E-9
Contextual Info: RFD15P05, RFD15P05SM, RFP15P05 f f l H A R R IS CKJ 15A, 50V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs D ece m b e r 1995 Features Packaging JE D EC TO-22QAB • 15A ,50V ’ *”d s o n = 0 .1 5 0 1 2 • Temperature Compensating PSPICE Model

Contextual Info: * f* 3 2 S RFD15P06, RFD15P06SM, RFP15P06 15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs September 1998 Description Features 15A, 60V These P-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives opti­

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

F15P06

Abstract: RFD15P06 RFD15P06SM RFD15P06SM9A RFP15P06 f15p
Contextual Info: RFD15P06, RFD15P06SM, RFP15P06 S E M I C O N D U C T O R 15A, 60V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Packaging Features JEDEC TO-220AB • 15A, 60V SOURCE DRAIN GATE • rDS ON = 0.150Ω • Temperature Compensating PSPICE Model

F15P06

Abstract: RFD15P06SM9A RFD15P06 RFD15P06SM RFP15P06 TB334
Contextual Info: RFD15P06, RFD15P06SM, RFP15P06 Data Sheet Title FD1 06, D15 6S P15 6 bt A, V, 50 m, anwer OSTs) utho eyrds ter- July 1999 15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs Features These P-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature

D15P05

Contextual Info: RFD15P05, RFD15P05SM, RFP15P05 Data Sheet July 1999 15A, 50V, 0.150 Ohm, P-Channel Power MOSFETs [ /Title RFD1 5P05, RFD15 P05S M, RFP15 P05 /Subject (15A, 50V, 0.150 Ohm, PChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, PChannel Power

Contextual Info: RFD15P06, RFD15P06SM, RFP15P06 £11 HARRIS “ ' S ' - ' C ' - ' " * ' 15A, 60V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs D ece m b e r 1995 Packaging Features JE D E C TO -22ÛAB • 15A, 60V SOURCE • rDS ON = 0.15012 • Temperature Compensating PSPICE Model

D15P05

Abstract: RFP15P05 P-channel MOSFET VGS -25V transistor RFD15P05 RFD15P05SM RFD15P05SM9A TB334 RFD15P05 d15p0
Contextual Info: RFD15P05, RFD15P05SM, RFP15P05 Data Sheet January 2002 15A, 50V, 0.150 Ohm, P-Channel Power MOSFETs Features • 15A, 50V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives