TA1771 Search Results

Contextual Info: FSL9110D, FSL9110R CD W ^ is 2.5A, -100V, 1.30 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features Description • 2 .5 A ,-1 0 0 V ,rD S o N = 1-30£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

sem 2105

Abstract: 2E12 FSL9110R4 JANSR2N7411 IC SEM 2105 sem 2106
Contextual Info: JANSR2N7411 Formerly FSL9110R4 2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 Features Description • 2.5A, -100V, rDS ON = 1.30Ω The Discrete Products Operation of Intersil Corporationhas developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

Contextual Info: JANSR2N7411 Formerly FSL9110R4 2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET January 2002 Features Description • 2.5A, -100V, rDS ON = 1.30Ω The Discrete Products Operation of Fairchild Corporationhas developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

Contextual Info: ¡SttSfiSSS FSL9110D, FSL9110R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs Description Features • 2.5A, -100V, rp s O N = 1.3012 • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects

Contextual Info: JANSR2N7411 GB « " E S ! Formerly FSL9110R4 2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 Features Description • 2.5A, -100V, The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

IC SEM 2105

Contextual Info: JANSR2N7411 7 ^ r”r Formerly FSL9110R4 June1998 2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET Features Description • 2.5A, -100V, ros ON = 1-30S2 T he D iscrete P roducts O peration of H arris S e m icon ducto r has developed a se rie s o f R adiation H ardened M O S FE T s

AC 151 rIV equivalent

Contextual Info: h a r r is S E M I C O N D U C T O R FSL9110D, FSL9110R " • M ■ W » ■ Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs Features Description • 2.5A, -100V, r[js ON = 1-30i2 T h e D is c re te P ro d u c ts O p e ra tio n o f H a rris S e m ic o n d u c to r

2E12

Abstract: FSL9110D FSL9110R
Contextual Info: S E M I C O N D U C T O R FSL9110D, FSL9110R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs June 1997 Features Description • 2.5A, -100V, rDS ON = 1.30Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

2E12

Abstract: FSL9110R4 JANSR2N7411 Rad Hard in Fairchild for MOSFET
Contextual Info: JANSR2N7411 Formerly FSL9110R4 2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 [ /Title JANS R2N74 11 /Subject (2.5A, -100V, 1.30 Ohm, Rad Hard, PChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 2.5A, 100V,

"MOSFET A3

Abstract: TC320
Contextual Info: gs H a r r i s S E M I C O N D U C T O R FSL9110D, FSL9110R m ' a a 1 a “ a Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs Features • Description The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

st178

Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Contextual Info: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment