TA248 Search Results

TA248

Abstract: ADSP-2153x 20L8 74HC374 74XX ADSP-TS101S DSM2150F5 ADSP-218XM
Contextual Info: TA248 TECHNICAL ARTICLE DSM2150F5 – Not Just a “Boot Load” Memory Bryan Hahn, Programmable System Memories Division STMicroelectronics, San Jose The simplicity and flexibility of using the DSM2150F4, offers DSP system designers a complete turnkey system memory solution that

TA248

Abstract: adsp jtag 20L8 74HC374 74XX ADSP-TS101S DSM2150F5 218xM
Contextual Info: TA248 TECHNICAL ARTICLE DSM2150F5 – Not Just a “Boot Load” Memory Bryan Hahn, Programmable System Memories Division STMicroelectronics, San Jose With the features and benefits listed below, the DSM2150F5 is much more than just “boot load” memory, and is a quantum leap over commodity

Contextual Info: Ordering number:ENN6368 N-Channel Silicon MOSFET CPH5602 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2168 [CPH5602] 2.9 5 4 0.15 3 2.8 0.05 0.6 1.6 0.6 • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. · Composite type with 2 MOSFETs contained in a

EC3H06B

Abstract: TA248
Contextual Info: Ordering number:ENN6524 NPN Epitaxial Planar Silicon Transistor EC3H06B UHF to S Band Low-Noise Amplifier and OSC Applications Package Dimensions unit:mm 2183 [EC3H06B] 0.15 0.15 0.05 1 2 0.05 3 0.5 1.0 0.4 0.05 0.25 0.35 0.2 0.25 • Low noise : NF=0.9dB typ f=1GHz .

CPH5601

Contextual Info: Ordering number:ENN6439 P-Channel Silicon MOSFET CPH5601 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2168 [CPH5601] 2.9 5 4 0.15 3 2.8 0.05 0.6 1.6 0.6 • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. · Composite type with 2 MOSFETs contained in a

CPH5602

Abstract: IT01081
Contextual Info: Ordering number:ENN6368 N-Channel Silicon MOSFET CPH5602 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2168 [CPH5602] 2.9 5 4 0.15 3 2.8 0.05 0.6 1.6 0.6 • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. · Composite type with 2 MOSFETs contained in a

EC3H02B

Contextual Info: 注文コード No. N 6 5 2 3 EC3H02B No. N6523 41000 新 EC3H02B 特長 NPN エピタキシァルプレーナ形シリコントランジスタ VHF ~ UHF 広帯域低雑音増幅用 ・低雑音である：NF=1.0dB typ（f=1GHz） 。 ・高利得である：⏐S21e⏐2=12dB typ（f=1GHz）

EC3H02B

Contextual Info: Ordering number:ENN6523 NPN Epitaxial Planar Silicon Transistor EC3H02B VHF to UHF Low-Noise Wide-Band Amplifier Applications Package Dimensions unit:mm 2183 [EC3H02B] 0.35 0.2 0.15 0.15 0.05 1 0.25 3 0.5 1.0 0.05 2 0.4 0.65 0.25 • Low noise : NF=1.0dB typ f=1GHz .

sanyo 1042

Abstract: 313-105 EC3H01B TA248 sanyo 982
Contextual Info: Ordering number : ENN6573 EC3H01B SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor EC3H01B VHF Band Low-Noise Amplifer and OSC Applications Features • • • Low noise : NF=1.8dB typ f=150MHz . High gain : S21e2=16dB typ (f=150MHz).

IC 4305

Abstract: S12-S22 EC3H01B IC313
Contextual Info: 注文コード No. N 6 5 7 3 EC3H01B 三洋半導体データシート N EC3H01B 特長 NPN エピタキシァルプレーナ形シリコントランジスタ VHF 帯低雑音増幅 , 発振用 ・低雑音である：NF=1.8dB typ（f=150MHz） 。 。 ・高利得である：S21e2=16dB typ（f=150MHz）

313-105

Abstract: EC3H01B
Contextual Info: Ordering number : ENN6573 EC3H01B NPN Epitaxial Planar Silicon Transistor EC3H01B VHF Band Low-Noise Amplifer and OSC Applications unit : mm 2183 0.35 0.2 0.25 [EC3H01B] 0.15 0.15 0.05 1 2 0.4 0.65 0.25 • Low noise : NF=1.8dB typ f=150MHz . High gain : S21e2=16dB typ (f=150MHz).

CPH5601

Contextual Info: Ordering number:ENN6439 P-Channel Silicon MOSFET CPH5601 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2168 [CPH5601] 2.9 5 4 0.15 3 2.8 0.05 0.6 1.6 0.6 • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. · Composite type with 2 MOSFETs contained in a

EC3H06B

Abstract: 0/a95 831 0198
Contextual Info: 注文コード No. N 6 5 2 4 EC3H06B 三洋半導体データシート N EC3H06B 特長 NPN エピタキシァルプレーナ形シリコントランジスタ UHF ~ S バンド低雑音増幅 , 発振用 ・低雑音である：NF=0.9dB typ（f=1GHz）

EC3H06B

Contextual Info: Ordering number : ENN6524 SANYO Semiconductors DATA SHEET EC3H06B NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier and OSC Applications Features • Low noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). · High gain : S21e2=10dB typ (f=1.5GHz).