TA4905 Search Results

Contextual Info: RHRP840, RHRP850, RHRP860 Semiconductor April 1995 File Number 3668.1 8A, 400V - 600V Hyperfast Diodes Features RHRP840, RHRP850 and RHRP860 TA49059 are hyper­ fast diodes with soft recovery characteristics (tp p < 30ns). They have half the recovery time of ultrafast diodes and are

RHR460

Contextual Info: RHRD440, RHRD450, RHRD460, RHRD440S, RHRD450S, RHRD460S Semiconductor April 1995 File Number 3613.4 4A, 400V - 600V Hyperfast Diodes Features RHRD440, RHRD450, RHRD460, RHRD440S, RHRD450S, and RHRD460S TA49055 are hyperfast diodes with soft recovery characteristics (tp p < 30ns). They have half the

Contextual Info: RHRD4120, RHRD4120S S em iconductor March 1997 File Number 3626.3 4A, 1200V Hyperfast Diodes Features RHRD4120 and RHRD4120S TA49056 are hyperfast diodes with soft recovery characteristics (tp p < 60ns). They have half the recovery time of ultrafast diodes and are silicon

RHRP860C

Contextual Info: RHRP840CC, RHRP850CC, RHRP860CC S em iconductor April 1995 File Number 3964.1 8A, 400V - 600V Hyperfast Dual Diodes Features RHRP840CC, RHRP850CC and RHRP860CC TA49059 are hyperfast dual diodes with soft recovery characteristics (tRR < 30ns). They have half the recovery time of ultrafast

G30N60

Abstract: TA49053 TA49172 TA49170 G30N60B3 G30N60B3D HGTG30N60B3D LD26 HGTG30N60b 200pulse
Contextual Info: HGTG30N60B3D Data Sheet April 2004 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Packaging JEDEC STYLE TO-247 The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a

g7n60b3d

Abstract: igbt g7n60b3d G7N60B3 HGT1S7N60B3DS HGT1S7N60B3DS9A HGTP7N60B3D RHRD660 2MH22 150OC
Contextual Info: HGTP7N60B3D, HGT1S7N60B3DS Data Sheet January 2000 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the

G3N60C3

Abstract: G3N60 G3N60C3D HGT1S3N60C3DS HGT1S3N60C3DS9A HGTP3N60C3D
Contextual Info: HGTP3N60C3D, HGT1S3N60C3DS Data Sheet January 2000 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTP3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices

HG20N60B3

Abstract: hG20N60 hg20n60b3 equivalent
Contextual Info: HGTG20N60B3 Data Sheet October 2004 40A, 600V, UFS Series N-Channel IGBTs Features The HGTG20N60B3 is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state

Contextual Info: HGTP1N120BND, HGT1S1N120BNDS S e m iconductor D ata S h eet F eb ru ary 1999 5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP1N120BND and the HGT1S1N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT

RHRD660

Abstract: rhr660 rhr650 RHRD650 RHRD640S RHRD660S RHRD660S9A RHR640 RHRD640 RHRD650S
Contextual Info: S E M I C O N D U C T O R RHRD640, RHRD650, RHRD660, RHRD640S, RHRD650S, RHRD660S 6A, 400V - 600V Hyperfast Diodes April 1995 Features • • • • • Package Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . . . . . . . . <30ns Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

G40N60B3

Contextual Info: HGTG40N60B3 Data Sheet November 2004 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

G40N60

Abstract: HGTG40N60B3 equivalent g40n60b g40n60b3 hgtg40n60b3 TA49052 LD26 RHRP3060 transistor* igbt 70A 300 V DSA003678
Contextual Info: HGTG40N60B3 Data Sheet December 2001 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

RHRP860C

Abstract: RHRP840CC RHRP860CC
Contextual Info: RHRP840CC, RHRP860CC Data Sheet January 2000 File Number 3964.2 8A, 400V - 600V Hyperfast Dual Diodes Features The RHRP840CC and RHRP860CC are hyperfast dual diodes with soft recovery characteristics trr < 30ns . They have half the recovery time of ultrafast diodes and are of

1n120cnd

Abstract: HGT1S1N120CNDS HGT1S1N120CNDS9A HGTP1N120CND RHRD4120 TB334 1N120CN
Contextual Info: HGTP1N120CND, HGT1S1N120CNDS Data Sheet December 2001 6.2A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP1N120CND and the HGT1S1N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT

HGT1S2N120CNDS

Abstract: HGTP2N120CND HGT1S2N120CNDS9A RHRD4120 TB334 2N120CN
Contextual Info: HGTP2N120CND, HGT1S2N120CNDS Data Sheet December 2001 13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTP2N120CND and HGT1S2N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT

HG20N60B3

Abstract: Series 475 Rev-B3 hG20N60 hg20n60b3 equivalent 475 Rev-B3 HGTG20N60B3 LD26 RHRP3060 TB334 hg20n
Contextual Info: HGTG20N60B3 Data Sheet October 2004 40A, 600V, UFS Series N-Channel IGBTs Features The HGTG20N60B3 is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state

HR6120

Abstract: RHRD6120 RHRD6120S RHRD6120S9A TA49058
Contextual Info: RHRD6120, RHRD6120S Data Sheet Title HR 120, HRD 20S bt A, 00V pert odes utho eyrds terrpoon, minctor, ache ergy ted, itch wer pes, wer itch - January 2000 File Number 3981.1 6A, 1200V Hyperfast Diodes Features The RHRD6120 and RHRD6120S are hyperfast diodes with

HG20N60B3

Abstract: hG20N60 hg20n60b3 equivalent HG20N60B G20N60B3 hg*20n60 g20n60 vqe 24 d HGTG20N60B3 G20N60B
Contextual Info: interrii HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 J a n u a ry . m Data Sheet 40A, 600V, UFS Series N-Channel IGBTs The HGT1S20N60B3S, the HGTP20N60B3 and the HGTG20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs

g30n60c3d

Abstract: G30N60 TA49053 TA49051 HGTG30N60C3D LD26 RHRP3060
Contextual Info: HGTG30N60C3D Data Sheet January 2009 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input

RHR6120C

Abstract: RHRP6120CC TA49058
Contextual Info: RHRP6120CC July 1996 File Number 4091.1 6A, 1200V Hyperfast Dual Diode Features The RHRP6120CC is a hyperfast dual diode with soft recovery characteristics tRR < 55ns . It has half the recovery time of ultrafast diodes and is silicon nitride passivated ion-implanted epitaxial planar construction.

Contextual Info: HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS H A R R IS semiconductor 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1996 Packaging Features JEDEC TO-220AB • 6A, 600V at Tc = +25°c EMITTER . 600V Switching SOA Capability • Typical Fall Time - 130ns at T j = +150°C

rhr660

Abstract: TA49057 RHRD660 RHRD660S RHRD660S9A UJ45
Contextual Info: RHRD660, RHRD660S in t e r r ii m i J a n u a ry . Data Sheet File Num ber 3746.3 6A, 600V Hyperfast Diodes Features The RHRD660 and RHRD660S are hyperfast diodes with soft recovery characteristics trr < 30ns . They have half the recovery time of ultrafast diodes and are silicon nitride

5n120bnd

Abstract: mosfet 5N120bnd TA49306 5n120 HGT1S5N120BNDS HGTG5N120BND HGTP5N120BND RHRD6120 TA49058 TA49308
Contextual Info: HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Data Sheet January 2000 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high

MCT thyristor

Abstract: MCT harris 3A65P100F2 IK25 THYRISTOR 35A 300V diode ik 60
Contextual Info: MCTV35P60F1D S E M I C O N D U C T O R April 1998 S DESIGN R NEW O F 2 F D E 35A, 600V ND P10 COMME CT3D65 NOT RE 3A65P100F2, M Thyristor MCT T See MC Features P-Type MOS Controlled with Anti-Parallel Diode Package • 35A, -600V JEDEC STYLE TO-247 • VTM = -1.35V (Max) at I = 35A and +150oC