TA49056 Search Results

Contextual Info: RHRD4120, RHRD4120S S em iconductor March 1997 File Number 3626.3 4A, 1200V Hyperfast Diodes Features RHRD4120 and RHRD4120S TA49056 are hyperfast diodes with soft recovery characteristics (tp p < 60ns). They have half the recovery time of ultrafast diodes and are silicon

Contextual Info: HGTP1N120BND, HGT1S1N120BNDS S e m iconductor D ata S h eet F eb ru ary 1999 5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP1N120BND and the HGT1S1N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT

1n120cnd

Abstract: HGT1S1N120CNDS HGT1S1N120CNDS9A HGTP1N120CND RHRD4120 TB334 1N120CN
Contextual Info: HGTP1N120CND, HGT1S1N120CNDS Data Sheet December 2001 6.2A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP1N120CND and the HGT1S1N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT

HGT1S2N120CNDS

Abstract: HGTP2N120CND HGT1S2N120CNDS9A RHRD4120 TB334 2N120CN
Contextual Info: HGTP2N120CND, HGT1S2N120CNDS Data Sheet December 2001 13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTP2N120CND and HGT1S2N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT

1N120CND

Contextual Info: L I* n n i C y a £ £ & HGTP1N120CND, HGT1S1N120CNDS 6.2A, 1200V, NPT Series N-Channel IGBT Wjth Anti-Parallel Hyperfast Diode ADVANCE INFORMATION November 1998 Features Description • 6.2A, 1200V, T C = 2 5 °C The HGTP1N120CND and the HGT1S1N120CNDS are NonPunch Through NPT IGBT designs. They are new members of

Contextual Info: HGTP2N120CND, HGT1S2N120CNDS Semiconductor D ata S h eet M arch 1999 13A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP2N120CND and HGT1S2N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT

Contextual Info: HGTP1N120CND, HGT1S1N120CNDS Semiconductor February 1999 Data Sheet 6.2A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP1N120CND and the HGT1S1N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT

HR4120

Abstract: RHRD4120 RHRD4120S RHRD4120S9A HR4120 INTERSIL
Contextual Info: RHRD4120, RHRD4120S Data Sheet January 2000 File Number 3626.4 4A, 1200V Hyperfast Diodes Features The RHRD4120 and RHRD4120S are hyperfast diodes with soft recovery characteristics trr < 60ns . They have half the recovery time of ultrafast diodes and are silicon nitride

1N120CND

Abstract: HGT1S1N120CNDS HGT1S1N120CNDS9A HGTP1N120CND RHRD4120 TB334
Contextual Info: HGTP1N120CND, HGT1S1N120CNDS Data Sheet January 2000 6.2A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP1N120CND and the HGT1S1N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT

2N120CN

Abstract: 12V 200A Relay HGT1S2N120CNDS HGT1S2N120CNDS9A HGTP2N120CND RHRD4120 TB334 2N120CND
Contextual Info: HGTP2N120CND, HGT1S2N120CNDS Data Sheet January 2000 13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTP2N120CND and HGT1S2N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT

HR4120

Abstract: RHRD4120 RHRD4120S RHRD4120S9A
Contextual Info: RHRD4120, RHRD4120S Data Sheet January 2002 4A, 1200V Hyperfast Diodes Features The RHRD4120 and RHRD4120S are hyperfast diodes with soft recovery characteristics trr < 60ns . They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.

2N120BND

Abstract: 12V 200A Relay MOSFET 1200v 3a HGT1S2N120BNDS HGT1S2N120BNDS9A HGTP2N120BND TB334
Contextual Info: HGTP2N120BND, HGT1S2N120BNDS Data Sheet January 2000 12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP2N120BND and HGT1S2N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT

HR4120

Abstract: RHRD4120 RHRD4120S RHRD4120S9A
Contextual Info: RHRD4120, RHRD4120S S E M I C O N D U C T O R 4A, 1200V Hyperfast Diodes March 1997 Features Package • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <60ns JEDEC STYLE TO-251 o • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C

HGTP2N120CND

Abstract: 12V 200A Relay HGT1S2N120CNDS HGT1S2N120CNDS9A RHRD4120 TB334
Contextual Info: HGTP2N120CND, HGT1S2N120CNDS Data Sheet January 2000 13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTP2N120CND and HGT1S2N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT

1N120CN

Abstract: 1N120CND GEM X 365 HGT1S1N120CNDS HGT1S1N120CNDS9A HGTP1N120CND RHRD4120 TB334
Contextual Info: HGTP1N120CND, HGT1S1N120CNDS Data Sheet January 2000 6.2A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP1N120CND and the HGT1S1N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT

Contextual Info: HGTP2N120BND, HGT1S2N120BNDS Semiconductor D ata S h eet A p ril 1999 12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP2N120BND and HGT1S2N120BNDS are NonPunch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT

HGT1S1N120BNDS

Abstract: HGT1S1N120BNDS9A HGTP1N120BND RHRD4120 TB334
Contextual Info: HGTP1N120BND, HGT1S1N120BNDS Data Sheet December 2001 5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP1N120BND and the HGT1S1N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT

HGT1S2N120BNDS

Abstract: HGT1S2N120BNDS9A HGTP2N120BND TB334
Contextual Info: HGTP2N120BND, HGT1S2N120BNDS Data Sheet December 2001 12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP2N120BND and HGT1S2N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT

hr 4120

Abstract: 4-120S 4120S
Contextual Info: RHRD4120, RHRD4120S H A R R IS S E M I C O N D U C T O R 4A, 1200V Hyperfast Diodes April 1 9 9 5 Package Features JE D E C S T Y LE TO-251 • Hyperfast with Soft R ecovery.<60ns • Operating T em p eratu

2N120CND

Abstract: transistor HJ 388 igbt spice model
Contextual Info: HGTP2N120CND, HGT1S2N120CNDS Semiconductor Data Sheet March 1999 13A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP2N120CND and HGT1S2N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT

hr4120

Abstract: Hyperfast Diode 1200V RHRD4120 RHRD4120S RHRD4120S9A 1475C
Contextual Info: interrii RHRD4120, RHRD4120S J a n u a ry . Data Sheet m i File Num ber 3626.4 4A, 1200V Hyperfast Diodes Features The RHRD4120 and RHRD4120S are hyperfast diodes with soft recovery characteristics trr < 60ns . They have half the recovery time of ultrafast diodes and are silicon nitride

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

HR4120

Abstract: RHRD4120 RHRD4120S RHRD4120S9A
Contextual Info: RHRD4120, RHRD4120S S E M I C O N D U C T O R 4A, 1200V Hyperfast Diodes April 1995 Features Package • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <60ns JEDEC STYLE TO-251 o • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C

1N120BND

Abstract: TB334 HGT1S1N120BNDS HGT1S1N120BNDS9A HGTP1N120BND RHRD4120
Contextual Info: HGTP1N120BND, HGT1S1N120BNDS Data Sheet January 2000 5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP1N120BND and the HGT1S1N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT