TA75 IC Search Results

2N3569

Abstract: 2N3568 2N3567 transistor 2N3569 "NPN Transistors" 2n3567 World transistors and ic 2N3568 DATASHEET 2n3569 to-105 PN3567 PN3569
Contextual Info: Datasheet Central 2N3567 2N3568 2N3569 PN3567 PN3568 PN3569 JEDEC T0-105 JEDEC TO- 9 2 EBC Sem iconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors SILICON NPN TRANSISTORS

Contextual Info: M PN 3569 NPN SILICON PLANAR EPITAXIAL TRANSISTOR M IC R O EI_EC;-rRCDIXIIC3S GENERAL DESCRIPTION : The PN 3569 is an NPN silicon planar epitaxial transistor designed for amplifier and swit­ ching applications for collector current up to 500mA. MECHANICAL OUTLINE

TA7506P

Abstract: TA75070P
Contextual Info: TA75070P BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC J-FET INPUT O P E R ATIONAL AMPLIFIER U n i t in m m T h e T A 7 5 0 7 0 P is a L o w - N o i s e J - F E T input operational a m p l i f i e r w i t h low in p u t bi as and o f f s e t current,

transistor 3569

Abstract: 3569 pN3569
Contextual Info: M NPN SILICON PLANAR EPITAXIAL TRANSISTOR M IC R O EI_EC;-rRCDIXIIC3S GENERAL DESCRIPTION : The PN 3569 is an NPN silicon planar epitaxial transistor designed for amplifier and swit­ ching applications for collector current up to 500mA. MECHANICAL OUTLINE

TA75254P

Contextual Info: BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA75254P INSTRUMENTATION OPERATIONAL AMPLIFIER The TA75254P m o n o l i t h i c instrume n t a t i o n operational ampli f i e r combined superlative perfo r m a n c e in low signal level applications and has low input offset

transistor 3569

Abstract: 3569 PN3569 MICRO ELECTRONICS ltd transistor ebc Transistor
Contextual Info: y tte NPN SILICON PLANAR EPITAXIAL TRANSISTOR IN /llC F t O E I _ E C ; - r R GENERAL DESCRIPTION : The PN 3569 is an NPN silicon planar epitaxial transistor designed for amplifier and swit­ ching applications for collector current up to 500mA. O I V I I C

Contextual Info: I |T E r j 1 I LM CLfA I HIGH COLLECTOR-EMITTER VOLTAGE TYPE LTV713F/LTV713FS/LTV713FM • FEATURES 1 Directly connectable to TTL 2 Current transfer ratio C T R : MIN. 50% at If = 5mA, V ce =5V 3. Low collector dark current (Ic eo : MAX. 1Cr7A at V c e -

Contextual Info: BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC X I A 7 R R R Q D/ f M W W W W l / Unit in mm DUAL LOW NO I S E O P E R A T I O N A L A M P L I F I E R • Wide Band D e c o m p e n s a t e d Av S20dB • Pin C o m p a t i b l e w ith TA 754 58P • Wide Ban d Ran ge

TA-531

Abstract: ic 54 9c
Contextual Info: r PRODUCT NUMBER S E E TABLE k 3 Zï « i. “i a8 6 » I § 5 uS +. 010 . 545 -. 005 13. 84+0. 25 -0. 13 s ly »s! » t » i »' M* * I ÎÏ I « i!_ NOTES: T : h - * * { -• Ìli H I +. . 100 2, 54 ü L ; i li is Î 4 *? ÎÏ 1i 000 -, 015 + 0 . 00 -0. 38

ta75558s

Contextual Info: BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC DUAL LOW NOISE OPERATIONAL AMPLIFIER • Internal Frequency Compensation Type • Pin Compatible with TA75458P and TA75458F • Wide Band Range : fT=3MHz Typ. • Suitable Application for Active Filter,

relay PW20

Abstract: KTB985 transistor C200 C200-400 KTD1347 transistor ktb985 C-200
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTB985 EPITAXIAL PLANAR PNP TRANSISTOR VOLTAGE REGULATORS, RELAY DRIVERS LAM P DRIVERS, ELECTRICAL EQUIPM ENT FEATURES • Adoption of MBIT processes. • Low collector-to-emitter saturation voltage. • Fast switching speed. • Large current capacity and wide ASO.

BERG PV-250A

Abstract: pv250-a
Contextual Info: Discrete Crimp-to-Wire Pins/Receptacles/Housings 2.54 mm 0.100 in. Ordering Data Finishing Options Contact Area Remainder Spring 2.54 urn (100 pin.) min 60/40 tin-lead 0.38 pm (15 pin.) min gold over nickel 0.76 pm (30 pin.) min gold over nickel 1.02 pm (40 pin.) min gold over nickel

Contextual Info: A PRELIMINARY Æ Ù l c a l i f o r n i a m ic ro devices polsi 27A90/91 ►► ► ► ► 9/10 CHANNEL LIVE ESD PROTECTION ARRAY Features Pin Assignments • Live ESD protection up to 10KV • EFI noise filter for very high frequencies i o n GND 2 a n IN I

Contextual Info: r PRODUCT NO. PUSH TP SEE TABLE HAND TOOL H T -8 0 INSTALL □□□□□□□□□□ 1 11 V 'U i □□□ndonnnti . i Ï Î il « i <« CORING CAVITY OPTIONALNOTE 7 lì ! flI * 8S FIGURE I 8- 1 FIGURE 2 S * 8I lb : t * NOTES: t * I* • m TP REMOVE TERMINAL

AN 7823

Abstract: LC7822 LC7821 LC7821 equivalent LC782I 2294a Analog Function Switch DIP30S LC7823 7822
Contextual Info: Ordering num ber ; EN2294A CMOS LSI ì I N0.2294A L C 7 8 2 / 1 , 7 8 2 2 , 7 8 2 3 Analog Function Switch Use Serial data-controlled function select switch suited for use in amplifiers, receivers. Features . Analog switches of 8 channels x 2 LC7 B2 3 : 7 channels x 2 are contained.

ti 9919

Abstract: 65486
Contextual Info: r PRODUCT ND. PU SH TO INSTALL SEE TABLE ú NOTE 7 TO TEST LATCH RETENTION SEE NOTE 3 HAND TOOL H T - 8 0 FIGURE g FIGURE 1 I n i l i ¿8 s \u h? .6 0 0 1 [1 5 .2 4 ] REF m b n n n u 'S i TO REMOVE TERMINAL, SEE NOTE 4 I .1 5 0 st * I h .0 7 0 .0 2 2 [3 .8 1 ] R EF

i 7822

Abstract: LC7822 equivalent LC7822 LC782I LC7821 equivalent LC7821 LC7823 LC7B21 2294a DIP30S
Contextual Info: Ordering num ber ; EN2294A CMOS LSI ì I N0.2294A L C 7 8 2 / 1 , 7 8 2 2 , 7 8 2 3 Analog Function Switch Use Serial data-controlled function select switch suited for use in amplifiers, receivers. Features . Analog switches of 8 channels x 2 LC7 B2 3 : 7 channels x 2 are contained.

Contextual Info: Ordering number: ENN6564 P-Channel Silicon MOSFET 5LP02N Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2178 Features •Low ON-resistance. ■Ultrahigh-speed switching. • 2.5V drive. Specifications Absolute Maximum Ratings at Ta = 25 C

AN 7823

Abstract: LC7821 IC LC7821 LC7823 LC7822 i 7822 2294a if-e22 LC782 LC7822 equivalent
Contextual Info: Ordering number ; EN2294A CMOS LSI N0.2294A L C 7 8 2 1 , 7 8 2 2 , 7 8 2 3 A nalog Function Switch Use . Serial data-controlled function select switch suited for use in amplifiers, receivers. Features . Analog switches of 8 channels x 2 LC7823: 7 channels x 2 are contained.

.1J 250

Contextual Info: ^ droits strictement reserves. Reproduction ou communication o destiers ¡nterdfte sous quelque forme que ce soit sons «gtorisotkm écrite du propfetaire. prxjprjete * @ 00*; ELECTRONICS. Droits de reproduction BERG ELECIFONCS WC. r I I 2 “I _L NOTES: <f MOLDING MATERIAL-MODIFIED POLYPHENYLENE OXIDE NORYL COLOR)

TA-531

Contextual Info: r PRODUCT NO. 6 5 8 1 7 -0 0 1 ? * t 2 - » « » NO OF POS D IM L D IM J DIM K DIM D 2 X 8 .7 0 0 /1 7 .7 8 1 .0 5 /2 6 .7 1 .3 0 /3 3 .0 .8 0 5 /2 0 .4 5 2 X 10 .9 0 0 /2 2 .8 6 1 .2 5 /3 1 .8 1 .5 0 /3 8 .1 1 .0 0 5 /2 5 .5 3 -0 0 3 2 X 13 1 .2 0 0 /3 0 .4 8

PS7122A-1B

Abstract: PS7122A-2B PS7122AL-1B PS7122AL-1B-E3 PS7122AL-1B-E4 PS7122AL-2B PS7122AL-2B-E3 PS7122AL-2B-E4
Contextual Info: 6, 8 PIN DIP 250 V BREAK DOWN VOLTAGE PS7122A-1B, -2B NORMALLY CLOSED TYPE PS7122AL-1B, -2B 1-CH, 2-CH OPTICAL COUPLED MOSFET FEATURES DESCRIPTION • 1 CHANNEL TYPE: 1b Output PS7122A-1B, -2B and PS7122AL-1B, -2B are solid state relays containing a GaAs LED on the light emitting side input

mosfet ac switch

Abstract: PS7122AL-2B-E4 8 pin 5v input -24voutput relay POWER MOSFET -N-CHANNEL 5v relay 8 pin 5V relay data sheet PS7122AL-2B-E3 high power infrared LEd IR LED infrared led mosfet
Contextual Info: 6, 8 PIN DIP 250 V BREAK DOWN VOLTAGE PS7122A-1B, -2B NORMALLY CLOSED TYPE PS7122AL-1B, -2B 1-CH, 2-CH OPTICAL COUPLED MOSFET FEATURES DESCRIPTION • 1 CHANNEL TYPE: 1b Output PS7122A-1B, -2B and PS7122AL-1B, -2B are solid state relays containing a GaAs LED on the light emitting side input

CXD2550P

Abstract: 100MIL
Contextual Info: HOV 1 9 19» S o n y C X D 2 5 5 P Digital Filter for CD Description CXD2550P Is a digital filter LSI with 4-times/8tlmes over sampling rate, developed for compact disc player. Package Outline Unit: mm Features • Provide a 4-times/8-times sampling digital filter.