TA76113 Search Results

76113dk8

Abstract: ta76113
Contextual Info: inteikil HUF76113DK8 Data S heet O c to b e r 1999 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Features Ultra/0' Formerly developmental type TA76113. Ordering Information HUF76113DK8 PACKAGE MS-012AA 4387.4 • Logic Level Gate Drive

AN9321

Abstract: AN9322 HUF76113DK8 HUF76113DK8T MS-012AA TB334
Contextual Info: HUF76113DK8 Data Sheet December 2001 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the

Contextual Info: HUF76113T3ST Data Sheet June 2000 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4388.3 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced

AN9321

Abstract: AN9322 HUF76113SK8 HUF76113SK8T MS-012AA TB334 TB337
Contextual Info: HUF76113SK8 Data Sheet January 2003 6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the

n13 sot 23

Abstract: 44E10 AN7254 AN7260 AN9321 AN9322 HUF76113T3ST TB334
Contextual Info: HUF76113T3ST TM Data Sheet June 2000 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4388.3 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced

Contextual Info: HUF76113SK8 interrii Data Sheet O ctober 1999 6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in

AN9321

Abstract: AN9322 HUF76113SK8 HUF76113SK8T MS-012AA TB334 TB337 TC-2121
Contextual Info: HUF76113SK8 Data Sheet December 2001 6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the

76113

Abstract: AN7254 AN7260 AN9321 AN9322 HUF76113T3ST TB334
Contextual Info: HUF76113T3ST Data Sheet June 2003 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the

TC2206

Abstract: TC-2112 202E1
Contextual Info: HUF76113SK8 Data Sheet October 1999 6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive • 6.5A, 30V • Ultra Low On-Resistance, rDS ON = 0.030Ω • Temperature Compensating PSPICE Model • Temperature Compensating SABER Model

TA7611

Abstract: TB334 AN7254 AN7260 AN9321 AN9322 HUF76113T3ST
Contextual Info: HUF76113T3ST Data Sheet December 2001 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the

AN9321

Abstract: AN9322 HUF76113SK8 HUF76113SK8T MS-012AA TB334 TB337 KP-37
Contextual Info: HUF76113SK8 Data Sheet October 1999 6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4448.2 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced

Contextual Info: HUF76113SK8 Semiconductor 6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET June 1998 Description Features m • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the

n13 sot 23

Contextual Info: HUF76113T3ST Data Sheet June 1999 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

AN9321

Abstract: HUF76113DK8 HUF76113DK8T MS-012AA TB334
Contextual Info: HUF76113DK8 TM Data Sheet June 2000 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET File Number 4387.5 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced

Contextual Info: HUF76113SK8 Semiconductor 6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET June 1998 | Features Description w • Logic Level Gate Drive This N-Chan nel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the

Contextual Info: HUF76113DK8 Data Sheet June 2000 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive • 6A, 30V • Ultra Low On-Resistance, rDS ON = 0.032Ω • Temperature Compensating PSPICE Model • Temperature Compensating SABER Model

Contextual Info: HUF76113T3ST Data Sheet January 2003 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the

UF76113

Contextual Info: 33 HUF76113DK8 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET July 1998 Description Features UttraFi Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the

Saber

Abstract: TB334 relay spice model mosfet 407 76113 Power MOSFET SOT-223 Power logic MOSFET SOT-223 power relay N-channel mosfet Logic Level N-Channel Power MOSFET HUF76113T3ST
Contextual Info: HUF76113T3ST interrii June 1999 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features Logic Level Gate Drive # This N-Channel power MOSFET is manufactured using the innovative &WMW W UltraFET process. This advanced * process technology achieves the

VA22

Abstract: Li ION spice model charge VA-22 tlsl100 HUF76113DK8 HUF76113DK8T MS-012AA TB334 TB337 ta761
Contextual Info: H U F76113D K 8 in t e r d i Data Sheet O c to b e r 1999 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET # 4 3 8 7 .4 Features • Logic Level Gate Drive This N-Channel power M O SFET is w F ile N u m b e r manufactured using the innovative