TAA 253 Search Results

H5128

Abstract: CY27H512
Contextual Info: PRELIMINARY Functional Description Features D D D D D Ċ Ċ Ċ Ċ High speed tAA = 25 ns max. commercial tAA = 35 ns max. (military) Low power 275 mW max. Less than 85 mW when deselected ByteĆwide memory organization 100% reprogrammable in the windowed package

H256

Abstract: CY27H256 2411AS
Contextual Info: Features • CMOS for optimum speed/power • High speed — tAA = 25 ns max. commercial — tAA — 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected • Byte-wide memory organization • 100% reprogrammable in the

27H256-30

Abstract: CY27H256 H2568 27H256-55
Contextual Info: Features • CMOS for optimum speed/power • High speed — tAA = 25 ns max. commercial — tAA — 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected • Byte-wide memory organization • 100% reprogrammable in the

CY27H512

Contextual Info: fax id: 3020 1CY 27H5 12 CY27H512 PRELIMINARY 64K x 8 High-Speed CMOS EPROM Features • CMOS for optimum speed/power • High speed — tAA = 25 ns max. commercial — tAA = 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected

LC 7258

Contextual Info: CYPRESS • CMOS for optimum speed/power • High speed — tAA = 25 ns max. com m ercial — tAA = 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected Byte-wide mem ory organization 100% reprogram m able in the windowed package

CY27H512-25JC

Abstract: CY27H512 CY27H512-25ZC 27H512-25 27H512-30 H5121 H5128
Contextual Info: 1CY 27H5 12 CY27H512 PRELIMINARY 64K x 8 High-Speed CMOS EPROM Features • CMOS for optimum speed/power • High speed — tAA = 25 ns max. commercial — tAA = 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected • Byte-wide memory organization

h2566

Abstract: H2567 H2563 H2565 H256 H2568 H256-4 CY27H256 CY27H256-25JC CY27H256-25ZC
Contextual Info: fax id: 3014 1CY 27H2 56 CY27H256 32K x 8 High-Speed CMOS EPROM Features • CMOS for optimum speed/power • High speed — tAA = 25 ns max. commercial — tAA = 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected • Byte-wide memory organization

C520

Abstract: ar1318 CY27H512 CY27H512-25JC CY27H512-25ZC CY27H512-30JC
Contextual Info: ,.V. Ï. Ï. V. ^ynr' Æ CYPRESS • CMOS fo r optimum speed/power • High speed — tAA = 25 ns max. comm ercial — tAA = 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected Byte-wide memory organization 100% reprogramm able in the windowed package

TAA611

Abstract: TAA611A12 taa 611 taa 253 taa611a TAA611A55 taa611 c A5-5 611a
Contextual Info: LINEAR I N T E G R A T E D C I R C U I T TAA 611A AUDIO AMPLIFIER • • • • OUTPUT POWER 1.8 W 9 V - 4 fi LOW DISTORTION LOW QUIESCENT CURRENT HIGH INPUT IMPEDANCE The TAA 611 A is a m o n olith ic integrated c irc u it in a 14-lead quad in-line plastic

Contextual Info: IBM11M2640H2M x 6411/10, 5.0V, Au. IBM11M1640L 1M x 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 1Mx64 Fast Page Mode DIMM • Performance: -60 -70 tRAC RAS Access Time 60ns 70ns tCAC CAS Access Time 20ns 25ns tAA

Contextual Info: i - » f CY27H010 CYPR ESS 128K X8 High-Speed CMOS EPROM Functional Description Features • CMOS for optimum speed/power • High speed — Iaa = 25 ns max. commercial — tAA — 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected

C286

Abstract: CY7C287 CY7C286-70WC C2867 C2863 C2868
Contextual Info: CY7C286 64K x 8 Reprogrammable PROM Features in the active mode and 40 mA in the standby mode. Access time is 45 ns. • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — tAA = 45 ns • Low power — 120 mA active The CY7C286 is available in a cerDIP package equipped with

27C512

Abstract: CY27C512 CY27C512-150WC 27C512-70
Contextual Info: ¥ CYPRESS Features • C M O S for optim um speed/pow er • High speed — tAA = 70 n s max. Low power • — 220 m W m ax. — L ess than 85 mW w hen d eselected • Byte-w ide m em ory organization • 100% reprogram m able in the w indow ed package •

Contextual Info: Y ’ 0 4 7 '1 - 3 ' 4 ' 5 / 7 K * 4 ECL ,v -o n 4 M _ 3 /n /5 /7 R A iu ? ¥ 1 n -1 7 /] 3 ;4 /5 /7 F EA TU R E S m Address access time, tAA: 3/4/5/7ns max. Chip select access time, tAC: 2ns max. Write pulse width, tww: 3ns min. Edge rate, tr/tf: 500ps typ.

74LVT16244

Abstract: HB56UW1673E-6A HB56UW1673E-7A
Contextual Info: HB56UW1673E-6A/7A 16,777,216-Word x 72-Bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline Buffered 8BYTE DIMM Rev. 0.1 Apr. 26, 1996 Description The HB56UW1673E belongs to 8 Byte DIMM Dual In-line Memory Module family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. This device is a

Nippon capacitors

Contextual Info: HB56UW1673E-A Series 16777216-word x 72-bit High Density Dynamic RAM Module ADE-203-823A Z Rev. 1.0 Sep. 17, 1997 Description The HB56UW1673E-A belongs to 8-byte DIMM (Dual in-line Memory Module) family , and have been developed an optimized main memory solution for 4 and 8-byte processor applications. The

Hitachi DSA00164

Abstract: Nippon capacitors
Contextual Info: HB56UW1673E-A Series 16777216-word x 72-bit High Density Dynamic RAM Module ADE-203-823A Z Rev. 1.0 Sep. 17, 1997 Description The HB56UW1673E-A belongs to 8-byte DIMM (Dual in-line Memory Module) family , and have been developed an optimized main memory solution for 4 and 8-byte processor applications. The

IBM11M4730C4M

Contextual Info: IBM11M4730C4M x 72 E12/10, 5.0V, Au. IBM11M1645L 1M x 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 1Mx64 Extended Data Out Page Mode DIMM • Performance: • • • • -60 -70 -Buffered inputs except RAS, Data

IBM11M4730C4M

Contextual Info: IBM11M4730C4M x 72 E12/10, 5.0V, Au. IBM11M2645L 2M x 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 2Mx64 Dual Bank Extended Data Out Page Mode DIMM • Performance: • • • • -60 -70 tRAC RAS Access Time 60ns

IBM11M4730C4M

Abstract: 75h51 IBM11M2645L
Contextual Info: Discontinued 9/98 - last order; 3/99 last ship IBM11M4730C4M x 72 E12/10, 5.0V, Au. IBM11M2645L 2M x 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 2Mx64 Dual Bank Extended Data Out Page Mode DIMM • Performance:

4617

Abstract: IBM11M4730C4M
Contextual Info: Discontinued 9/98 - last order; 3/99 last ship IBM11M4730C4M x 72 E12/10, 5.0V, Au. IBM11M1645L 1M x 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • System Performance Benefits: -Buffered inputs (except RAS, Data)

Hitachi DSA002742

Abstract: Nippon capacitors
Contextual Info: HB56UW1673E Series 16777216-word x 72-bit High Density Dynamic RAM Module ADE-203-575B Z Rev. 2.0 Jun. 16, 1997 Description The HB56UW1673E belongs to 8-byte DIMM (Dual in-line Memory Module) family , and have been developed an optimized main memory solution for 4 and 8-byte processor applications. The

Hitachi DSA00164

Abstract: Nippon capacitors
Contextual Info: HB56UW1672E-A Series 16777216-word x 72-bit High Density Dynamic RAM Module ADE-203-822A Z Rev. 1.0 Sep. 17, 1997 Description The HB56UW1672E-A belongs to 8-byte DIMM (Dual in-line Memory Module) family, and has been developed an optimized main memory solution for 4 and 8-byte processor applications. The

Hitachi DSA002742

Abstract: Nippon capacitors
Contextual Info: HB56UW1672E Series 16777216-word x 72-bit High Density Dynamic RAM Module ADE-203-683B Z Rev. 2.0 Jun. 16, 1997 Description The HB56UW1672E belongs to 8-byte DIMM (Dual in-line Memory Module) family , and has been developed an optimized main memory solution for 4 and 8-byte processor applications. The