TAA 440 Search Results

Contextual Info: Tripp Lite 1111 West 35th Street Chicago, IL 60609 USA Telephone: + 773 869 1234 E-mail: saleshelp@tripplite.com Model #: SR25UBTAA TAA Compliant 25U SmartRack Premium Enclosure (includes doors and side panels) Highlights Compliant with the Federal Trade Agreements Act (TAA) for GSA Schedule

Contextual Info: Tripp Lite 1111 West 35th Street Chicago, IL 60609 USA Telephone: + 773 869 1234 E-mail: saleshelp@tripplite.com Model #: SM3000RMXL2UTAA TAA Compliant SmartPro 3kVA 2.88kW Line Interactive Extended Run UPS, Sine wave, SNMP option, 2U, LCD, USB, Serial, EPO, 120V

Contextual Info: Tripp Lite 1111 West 35th Street Chicago, IL 60609 USA Telephone: + 773 869 1234 E-mail: saleshelp@tripplite.com Model #: SNMPWEBCARDTAA TAA-Compliant SNMPWEBCARD for remote monitoring and control via SNMP, Web or telnet Highlights NEW firmware web-only version 12.06.0061 now available!

Contextual Info: IBM11M32730B IBM11M32730C 32M x 72 DRAM Module Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 32Mx72 Dual Bank Fast Page Mode DIMM • Performance: -60 Wc RAS Access Time 60ns toAC CAS Access Time 20ns tAA Access Time From Address

SO-DIMM 144-pin

Contextual Info: IBM11T1640L 1M x 64 144 PIN SODIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • Performance: -60 -70 tRAC RAS Access Time 60ns 70ns fcAC CAS Access Time 15ns 20ns tAA Access Time From Address 30ns

Contextual Info: IBM11S1320NL1M x 3212/8, 5.0V, Au. IBM11S1320NN1M x 3212/8, 3.3V, Au. IBM11S8320HP 8M x 32 SO DIMM Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: -60 tRAC RAS Access Time 60ns tCAC CAS Access Time 15ns tAA Access Time From Address

taa 861

Contextual Info: IBM11S1320NL1M x 3212/8, 5.0V, Au. IBM11S1320NN1M x 3212/8, 3.3V, Au. IBM11S8320HP 8M x 32 SO DIMM Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: -60 tRAC RAS Access Time 60ns tCAC CAS Access Time 15ns tAA Access Time From Address

TAA 861 A11

Abstract: IBM DIMM 32MB
Contextual Info: IBM11S1320NL1M x 3212/8, 5.0V, Au. IBM11S1320NN1M x 3212/8, 3.3V, Au. IBM11S8325HP 8M x 32 SO DIMM Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: -60 tRAC RAS Access Time 60ns tCAC CAS Access Time 15ns tAA Access Time From Address

TCA 430

Abstract: 431lg
Contextual Info: LG Semicon 1M/4M Base FPM Timing Timing Waveforms -1 tRC ÌRAS ÎRP \ RAS .2 ÌRCD tRSH tCAS tT CAS 7 •<L tRAJL tRAD tASR ADDRESS \ tcRP tcSH U se. tRAH ROW t e AH. COLUMN , tRRH , t»CH tRCS WE tCAC tAA tRAC tOFF Doirr /< -^ D our y ■'v_ ?

Contextual Info: IBM11D4320B IBM11D8320B 4M/8M X 32 DRAM Module Features • 72-Pin JED EC Standard Single-ln-Line Memory Module • Performance: -6 0 -70 tRAC R A S A ccess Tim e 60ns 70ns tCAC C A S A ccess Tim e 15ns 20ns tAA A ccess T im e From Address 30ns 35ns ÍRC Cycle Tim e

Contextual Info: IBM11D4325B IBM11D8325B 4M/8M X 32 DRAM Module Features • 72-Pin JED EC Standard Single-In-Line Memory Module • Performance: -6 0 -7 0 tRAC RA S A ccess Tim e 60ns 70ns tCAC C A S A ccess Tim e 15ns 20ns tAA A ccess Tim e From Address 30ns 35ns tRC Cycle Tim e

taa 480

Contextual Info: 64-bit Cache M odule A S 7 M 6 4 T 3 A Series Features Logic Block Diagram ♦ 8-bit 5V asynchronous tag , — * — » -► — ► ♦ High speed: tAA= 12-15 ns r LA 5 -19 I A4B A3B ECS OE — — — — ► A4 ► ► CE ► OE 1 “ I I A4A A3A E£S

ECS6

Abstract: TI06
Contextual Info: 6 4-bi t C a c h e M o d u l e A S 7 M 6 4 U 3 A Series Features Logic Block Diagram ♦ 64-bit 3.3V asynchronous data 1 A4A A3A CW E 0 E ♦ 8-bit 5V asynchronous tag — — — — * ► ► ► ♦ High speed: tAA = 12-15 ns A4B A3B CWE OE — — —

cea 141

Abstract: A5A 103 A5A 101 D4047
Contextual Info: 6 4 -b it C a c h e M o d u le A S 7 M 6 4 P Series Features Logic Block Diagram ♦ Pentium -ready 64-bit data path A 3A -A 6A • ♦ High speed: tAA= 10-20 ns ♦ Low Power - AO-3 A 07 -1 9 • A3B-A6B — » 4 0 -3 A 07-19 — * A4-16 A 4-16 CËÂ •

Contextual Info: IS45C4400X IS45LV4400X SERIES ISSI 4M x 4 16-MBIT DYNAMIC RAM WITH EDO PAGE MODE PRELIMINARY INFORMATION OCTOBER 2002 FEATURES DESCRIPTION • Extended Data-Out (EDO) Page Mode access cycle • TTL compatible inputs and outputs • Refresh Interval: The ISSI 4400 Series is a 4,194,304 x 4-bit high-performance

Contextual Info: IS45C4400X IS45LV4400X SERIES ISSI 4M x 4 16-MBIT DYNAMIC RAM WITH EDO PAGE MODE PRELIMINARY INFORMATION OCTOBER 2002 FEATURES DESCRIPTION • Extended Data-Out (EDO) Page Mode access cycle • TTL compatible inputs and outputs • Refresh Interval: The ISSI 4400 Series is a 4,194,304 x 4-bit high-performance

IS41C44002

Abstract: IS41C44004 IS41C4400X IS41LV44002 IS41LV44004 IS41LV4400X
Contextual Info: IS41C4400X IS41LV4400X SERIES ISSI 4M x 4 16-MBIT DYNAMIC RAM WITH EDO PAGE MODE SEPTEMBER 2000 FEATURES DESCRIPTION • Extended Data-Out (EDO) Page Mode access cycle • TTL compatible inputs and outputs • Refresh Interval: The ISSI 4400 Series is a 4,194,304 x 4-bit high-performance

IS41C44002

Abstract: 41C4400X IS41C44004 IS41C4400X IS41LV44002 IS41LV44004 IS41LV4400X
Contextual Info: IS41C4400X IS41LV4400X SERIES ISSI 4M x 4 16-MBIT DYNAMIC RAM WITH EDO PAGE MODE JUNE, 2001 FEATURES DESCRIPTION • Extended Data-Out (EDO) Page Mode access cycle • TTL compatible inputs and outputs • Refresh Interval: The ISSI 4400 Series is a 4,194,304 x 4-bit high-performance

44-PIN

Abstract: LH5324P00A LH5324P00AN
Contextual Info: PRELIMINARY CMOS 24M 3M x 8/1.5M × 16 Mask-Programmable ROM LH5324P00A FEATURES • 3,145,728 words × 8 bit organization (Byte mode) 1,572,864 words × 16 bit organization (Word mode) • Access time: 120 ns (MAX.) • Power consumption: Operating: 440 mW (MAX.)

Contextual Info: LH5332P00 FEATURES • 4,194,304 words x 8 bit organization Byte mode 2,097,152 words × 16 bit organization (Word mode) • Access time: 120 ns (MAX.) • Power consumption: Operating: 440 mW (MAX.) Standby: 550 µW (MAX.) • Static operation • TTL compatible I/O

LH5332P00N

Abstract: 44-PIN 48-PIN
Contextual Info: CMOS 32M 4M x 8/2M × 16 Mask-Programmable ROM LH5332P00 FEATURES • 4,194,304 words × 8 bit organization (Byte mode) 2,097,152 words × 16 bit organization (Word mode) • Access time: 120 ns (MAX.) • Power consumption: Operating: 440 mW (MAX.) Standby: 550 µW (MAX.)

TCA 120

Abstract: M7810
Contextual Info: GMM781000CNS-60/70/80 LG Semicon Co.,Ltd. Description 1,048,576 W O R D S x 8 BIT CMOS DYNAMIC RAM MODULE Features • H igh D ensity Standard 30 pin m ounting 2 pcs o f 4M D R A M G M 71C 4400C J SO J • Fast Page M ode Capability • Single Pow er Supply

Contextual Info: LH5332C00 FEATURES • 2,097,152 words x 16 bit organization CMOS 32M 2M × 16 MROM PIN CONNECTIONS 42-PIN DIP TOP VIEW • Access time: 120 ns (MAX.) • Power consumption: Operating: 440 mW (MAX.) Standby: 550 µW (MAX.) A18 1 42 A19 A17 2 41 A8 A7 3

42-PIN

Abstract: LH5332C00D
Contextual Info: LH5332C00 CMOS 32M 2M x 16 Mask-Programmable ROM FEATURES • 2,097,152 words × 16 bit organization PIN CONNECTIONS 42-PIN DIP TOP VIEW • Access time: 120 ns (MAX.) • Power consumption: Operating: 440 mW (MAX.) Standby: 550 µW (MAX.) A18 1 42 A19