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    TAA 521 A Search Results

    TAA 521 A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    EV1HMC521ALC4 Analog Devices Mixers Visit Analog Devices Buy
    ADL5521ACPZ-R7 Analog Devices Single LNA with Low Gain Visit Analog Devices Buy
    HMC521ALC4 Analog Devices Mixers Visit Analog Devices Buy
    HMC521A-SX Analog Devices GaAs IQ Mixer Sample Pack Visit Analog Devices Buy
    ADRF6521ACPZ Analog Devices E-band VGA 3Ghz Visit Analog Devices Buy
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    TAA 521 A Price and Stock

    Analog Devices Inc MAX25210ATAA8/V+T

    Linear Voltage Regulators ATO707, High Voltage LDO in P90D
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    Mouser Electronics MAX25210ATAA8/V+T 3,850
    • 1 $2.93
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    • 100 $1.62
    • 1000 $1.25
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    Analog Devices Inc MAX25210ATAA8/V+

    Linear Voltage Regulators ATO707, High Voltage LDO in P90D
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MAX25210ATAA8/V+ 3,064
    • 1 $2.63
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    • 1000 $1.34
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    Analog Devices Inc MAX25210ATAA9/V+T

    Linear Voltage Regulators ATO707, High Voltage LDO in P90D
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    Mouser Electronics MAX25210ATAA9/V+T 2,986
    • 1 $2.96
    • 10 $1.99
    • 100 $1.64
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    Analog Devices Inc MAX25210ATAA9/V+

    LDO Voltage Regulators ATO707, High Voltage LDO in P90D
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    Mouser Electronics MAX25210ATAA9/V+ 463
    • 1 $3.56
    • 10 $2
    • 100 $1.75
    • 1000 $1.15
    • 10000 $1.1
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    United Chemi-Con Inc E32D401HPN521TAA5U

    Aluminum Electrolytic Capacitors - Screw Terminal
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    Mouser Electronics E32D401HPN521TAA5U
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    • 100 $14.85
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    TAA 521 A Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TAA521A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    TAA521A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    TAA521A Unknown IC Datasheets - Shortform Scan PDF
    TAA521A-709 Unknown IC Datasheets - Shortform Scan PDF

    TAA 521 A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    74std

    Abstract: aval PKW 1000 bytek TAA 521 versatest 2100 elan digital systems cmos 4000 series FM27040
    Text: Fairchild Semiconductor Salt Lake 3333 West 9000 South West Jordan, UT 84088-8838 Fax: 1.801.562.7500 Qualification and Characterization of the FM27C040 Product: 4 Mbit UV EPROM Organization: Technology: 512K x 8 CMOS Process: Die Size: Passivation: TS55 145.1 X 201.9 mils


    Original     		PDF FM27C040 74std aval PKW 1000 bytek TAA 521 versatest 2100 elan digital systems cmos 4000 series FM27040

    m 9835

    Abstract: trasistor bytek bytek Programmers 11801 aval PKW 1000 aval pkw 3000 TAA 521 TAA 521 A fairchild reliability report transistor
    Text: Fairchild Semiconductor Salt Lake 3333 West 9000 South West Jordan, UT 84088-8838 Fax: 1.801.562.7500 Qualification and Characterization of the FM27C010 Product: 1 Mbit UV EPROM Organization: Technology: 128k x 8 CMOS Process: Die Size: Passivation: TS55 91.2 x 136.2 mils


    Original     		PDF FM27C010 m 9835 trasistor bytek bytek Programmers 11801 aval PKW 1000 aval pkw 3000 TAA 521 TAA 521 A fairchild reliability report transistor

    data sheet ic 7483

    Abstract: pin diagram for IC 7483 ttl 7483 FULL ADDER 7483 IC 7483 full adder IC 7483 application of ic 7483 Datasheet of IC 7483 pin diagram for IC 7483 xor 7483 adder
    Text: June 1996, ver. 1 Introduction Understanding FLASHlogic Timing Application Note 79 Altera devices provide device performance that is consistent from simulation to application. Before programming or configuring a device, you can determine the worst-case timing delays for any design. You can


    Original     		PDF

    KMM59256BN

    Abstract: KM44C256BJ
    Text: S A M S U N G ELECTR O N ICS IN C 42E D D 7c lbm42 D O IO M ID 3 SSM G K KMM59256BN DRAM MODULES 2 5 6 K X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM59256BN is a 262,144 bit X 9 Dynamic RAM high density memdry module. The Sam­


    OCR Scan     		PDF KMM59256BN KMM59256BN KM44C256BJ 256KX4) 20-pin KM41C256J-256KX1) 18-pin 30-pin KMM59256BN-

    bt dof

    Abstract: No abstract text available
    Text: •HYUNDAI HYM536410 Series SEMICONDUCTOR 4M X 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536410 is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400 in 24/28 pin SOJ and four HY514100A In 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0 .2 ^uF decoupling


    OCR Scan     		PDF HYM536410 36-bit HY5117400 HY514100A HYM536410M/LM HYM536410MG/LMG 4b750flà 1CE06-00-MAY93 bt dof

    Untitled

    Abstract: No abstract text available
    Text: bq4013/bq4013Y BENCHMARQ 128Kx8 Nonvolatile SRAM Features General Description >- Data retention in the absence of power The CMOS bq4013 is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		PDF bq4013/bq4013Y 128Kx8 bq4013 576-bit 32-pin bq4013YMA-120N bq4013-70 bq4013Y-70 bq4013

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS 47E D Marchi 990 Edition 2.2 DATA SHEET 3 7 4 ^ 2 OOnSll 1 • FUJITSU MB81C4256-70/-80/-10/-12 CMOS 1,048,576 BIT FAST PAGE MODE DYNAMIC RAM CMOS 256 x 4 Bits Fast Page Mode DRAM The Fujitsu MB81C4256 is a CMOS, fully decoded dynamic RAM organized as


    OCR Scan     		PDF MB81C4256-70/-80/-10/-12 MB81C4256 144words B81C4256 26-LEAD LCC-26P-M04) C26064S-1C MB81C4256-70

    Untitled

    Abstract: No abstract text available
    Text: H Y 5 1 V 4 2 6 0 B •HYUNDAI S e r ie s 256KX 16-bit CMOS DRAM with 2 CAS PRELIMINARY DESCRIPTION The HY51V4260B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CM OS process technology and advanced circuit design technique to achieve


    OCR Scan     		PDF 256KX 16-bit HY51V4260B 400mil 40pin 40/44pin 1AC26-00-MAY94 4b75Gflfl

    Untitled

    Abstract: No abstract text available
    Text: PRELIM INARY DATA S H E E T NE C MOS INTEGRATED CIRCUIT M C -4 2 1 0 0 0 A A 6 4 F B 1M -W O R D B Y 64-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-421 OOOAA64FB is a 1 048 576 words by 64 bits dynamic RAM module on which 4 pieces of 16M DRAM ¿¿PD 4218160 are assembled.


    OCR Scan     		PDF 64-BIT MC-421 OOOAA64FB 421000AA64-60 b427S5S 0aSA317 MC-421000AA64FB bM27S2S 00SS3n

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM5 1 4 1 90/SL_ 262,144-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514190/SL is a new generation Dynamic RAM organized as 262,144-word x 18-bit configuration. The technology used to fabricate theMSM514190/SL is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF 90/SL_ 144-Word 18-Bit MSM514190/SL theMSM514190/SL cycles/16ms,

    maa 502

    Abstract: Tesla katalog MAA723 Halbleiterbauelemente DDR TAA 141 TESLA KF520 transistor vergleichsliste maa 503 Maa 325
    Text: Klaus K. Streng Analoge Integrierte Schaltungen von T E SL A electrónica • Band 142 Klaus K. Streng Analoge Integrierte Schaltungen von TESLA MILITÄRVERLAG DER DEUTSCHEN DEMOKRATISCHEN REPUBLIK 1. Auflage, 1976, 1/— 15. Tausend M ilitärverlag der Deutschen Dem okratischen Republik


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: H Y 5 1 V 1 6 4 0 0 A S e r ie s 4M X 4-bit CMOS DRAM »HYUNDAI PRELIMINARY DESCRIPTION The HY51V16400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16400A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51V16400A HY51V16400A HY51V16400Ato 1AD31-00-MAY94 4b750flfl HY51V16400AJ HY51V16400ASLJ HY51V16400AT HY51V16400ASLT

    Untitled

    Abstract: No abstract text available
    Text: DALLAS s e m ic o n d u c t o r D S 1643/D S 1 6 4 3 LPM Nonvolatile Timekeeping RAM FEATURES PIN ASSIGNMENT • Form, fit, and function compatible with the MK48T08 Timekeeping RAM • Integrated NV SRAM, real time clock, crystal, power fail control circuit and lithium energy source


    OCR Scan     		PDF 1643/D MK48T08 nonv11/12 2bl413Q S1643/D S1643LPM DS1643LPM 26-PIN 52-pin

    MH1M645CXPJ-6

    Abstract: M5M418165
    Text: MITSUBISHI LS Is DRAM MODULE MH1 M645CXPJ-6.-7 HYPER PAGE MODE 67108864-BIT (1048576-WQRD BY 64-BIT) DYNAMIC RAM DESCRIPTION The MH1M645CXPJ is 1048576-word x 64-bit dynamic RAM module. This consists of four industry standard 1M x 16 dynamic RAMs in SOJ and three industry standard input


    OCR Scan     		PDF M645CXPJ-6 67108864-BIT 1048576-WQRD 64-BIT) MH1M645CXPJ 1048576-word 64-bit MH1M645CXPJ-6 M645CXPJ-7 1M645CXPJ-6 M5M418165

    Untitled

    Abstract: No abstract text available
    Text: KM48C8004AS CMOS DRAM ELECTR O NICS 8 M x 8 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Access time -5, -6, or -7 , package


    OCR Scan     		PDF KM48C8004AS KM48C8004A 16Mx4, 512Kx8) 48C8004AS G03S50b 71L4142

    transistor sl 431

    Abstract: ZIP40-P-475
    Text: O K I Sem iconductor M S M 5 1 4 1 9 0 / S L _ 262,144-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514190/SL is a new generation Dynamic RAM organized as 262,144-word x 18-bit configuration. The technology used to fabricate theMSM51419 0 /SL is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM514190/SL_ 144-Word 18-Bit MSM514190/SL theMSM514190/SL cycles/16ms, transistor sl 431 ZIP40-P-475

    Untitled

    Abstract: No abstract text available
    Text: IB M 1 1 D 2 3 2 0 H 2M x 32 DRAM Module Features • 72-Pin Single-ln-Une Memory Module Low current consumption • Performance: All inputs & outputs are fully TTL & C M O S compatible -60 ; W c : RAS Access Time tcAC CAS Access Time i -70 60ns i 70ns Fast Page Mode access cycle


    OCR Scan     		PDF 72-Pin 110ns 130ns 75H1697 SA14-4338-02 IBM11D2320H

    Untitled

    Abstract: No abstract text available
    Text: KM44V16100AK CMOS D R A M ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time(-5, -6,


    OCR Scan     		PDF KM44V16100AK 16Mx4 16Mx4, 512Kx8)

    Untitled

    Abstract: No abstract text available
    Text: HY51V16400B Series -HYUNDAI 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V16400B is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16400B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51V16400B HY51V16400B 1A047-00-MAY95 HY51V16400BJ HY51V16400BSL HY51V16400BT HY51V16400BSLT

    Untitled

    Abstract: No abstract text available
    Text: jm ÆF n k k CMOS SRAM 1M-BIT 128K X 8 wmuMMhm N541024 • Features • CM OS SRAM organized as 131,072 X 8bits • S in g le+ 5 .0 v (± 1 0 % ) Power Supply • High Speed A ccess tim e : 15/17/20/25ns • Operating Temperature : -40°C to 85°C • Low power operation


    OCR Scan     		PDF 15/17/20/25ns N541024 -32pin 300mil 400mil 541024TJ-15 541024SJ-15 541024TJ-17

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _/ ¿¿PD424400-L 4 M-BIT DYNAMIC RAM 1 M-WORD BY 4-BIT, FAST PAGE MODE Description The ¿iPD424400-L is a 1 048 576 words by 4 bits dynamic CMOS RAM. The fast page mode capability realize high speed access and low power consumption.


    OCR Scan     		PDF iPD424400-L 26-pin PD424400-60L iiPD424400-70l 0PD4244OO-8OL /iPD424400-10L VP15-207-2 b457S25

    bPA20

    Abstract: No abstract text available
    Text: •HYUNDAI H Y 5 1 V 1 7 1 0 0 A S e r ie s 16M x 1-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V17100Ais the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY51V17100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51V17100Ais HY51V17100A HY51V17100A 1AD22-00-MAY94 4b750flfl HY51V17100AJ HY51V17100ASLJ HY51V17100AT HY51V17100ASLT bPA20

    Untitled

    Abstract: No abstract text available
    Text: KMM59256BN DRAM MODULES 2 5 6 K X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 59256BN is a 2 6 2 ,1 4 4 bit X 9 Dynamic RAM high density memory module. The Sam­ sung KM M 59256BN consist of two 1M bit DRAMs


    OCR Scan     		PDF KMM59256BN 59256BN 44C256BJ 20-pin 256J-256K 18-pin 30-pin 59256BN- 130ns

    HM62256LP-12

    Abstract: hm62256 hm62256lfp10t 62256 hitachi HM62256LP-15 HM62256LFP hm62256lp HM62256LP-15SL HM62256LFP12T HM62256P-8
    Text: HM62256 Series Maintenance only 32768-word x 8-bit High Speed CMOS Static RAM Features High speed: Fast access time 85/100/120/150 ns max Low power standby and low power operation — Standby: 200 nW (typ)/ 10 |iW (typ) (L-/L-SL-version) — Operation: 40 mW (typ) ( / = 1MHz)


    OCR Scan     		PDF HM62256 32768-word HM62256FP-8T HM62256FP-10T HM62256FP-12T HM62256FP-15T HM62256LFP-8T HM62256LFP-10T HM62256LFP-12T HM62256LFP-15T HM62256LP-12 hm62256lfp10t 62256 hitachi HM62256LP-15 HM62256LFP hm62256lp HM62256LP-15SL HM62256LFP12T HM62256P-8