TAA 550 Search Results

Contextual Info: TAA-Compliant 550VA Eco Energy-Saving UPS System MODEL NUMBER: ECO550UPSTAA Highlights Federal Trade Agreements Act / TAA Compliant for GSA Schedule purchases 550VA ultra-compact 120V standby UPS, energy-saving ECO outlets Maintains AC output during power

Contextual Info: TAA Compliant Smart USB UPS System - Intelligent, line-interactive battery backup for workstations MODEL NUMBER: SMART550USBTAA Highlights Federal Trade Agreements Act / TAA Compliant for GSA Schedule purchases 550VA tower 120V line interactive UPS Corrects brownouts as low as

Contextual Info: Tripp Lite 1111 West 35th Street Chicago, IL 60609 USA Telephone: + 773 869 1234 E-mail: saleshelp@tripplite.com Model #: ECO550UPSTAA TAA-Compliant 550VA Eco Energy-Saving UPS System Highlights Federal Trade Agreements Act / TAA Compliant for GSA Schedule purchases

Contextual Info: Tripp Lite 1111 West 35th Street Chicago, IL 60609 USA Telephone: + 773 869 1234 E-mail: saleshelp@tripplite.com Model #: SMART550USBTAA TAA Compliant Smart USB UPS System - Intelligent, line-interactive battery backup for workstations Highlights Federal Trade Agreements Act / TAA Compliant for GSA Schedule purchases

C520

Abstract: ar1318 CY27H512 CY27H512-25JC CY27H512-25ZC CY27H512-30JC
Contextual Info: ,.V. Ï. Ï. V. ^ynr' Æ CYPRESS • CMOS fo r optimum speed/power • High speed — tAA = 25 ns max. comm ercial — tAA = 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected Byte-wide memory organization 100% reprogramm able in the windowed package

colour tv circuit diagram

Abstract: colour tv power supply circuit diagram colour television power circuit diagram TAA 293 matrix COLOUR TV SCHEMATIC DIAGRAM 630S 630-S TAA630S colour television schematics colour tv circuit
Contextual Info: TAA 630S LINEAR INTEGRATED CIRCUIT SYNCHRONOUS DEMODULATOR FOR PAL COLOUR TV SETS The TAA 630 S is a silico n m on olithic integrated c irc u it in a 16-lead dual in -lin e plastic package. It incorporates the follow ing fun ctions: — active synchronous dem odulators fo r F B-Y and ± F (R-Y) signals

Contextual Info: mw CYPRESS Features • High speed — 20 ns tAA • CMOS Tor optim um speed/power • T ran sp aren t write 7C161A • Low active power — 550 mW • Low standby power — 220 mW • TTL-com patible inputs and outputs • Automatic power-down when dese­

Contextual Info: PRELIMINARY CY7C1009 128K x 8 Static R AM Features Functional Description • High speed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 1020 mW • Low standby power — 250 mW • 2.0V data retention optional — 100 ^iW • AvaUable in 450 x 550-mil LCC

CY7C1009

Contextual Info: 1CY 7C10 09 PRELIMINARY CY7C1009 128K x 8 Static RAM Features • High speed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 1020 mW • Low standby power — 250 mW • 2.0V data retention optional — 100 µW • Available in 450 x 550-mil LCC

Contextual Info: 7C1009: 1 1 -2 5 -9 1 Revision: Monday, January 11,1993 — ^ MAR S 3 1993 PRELIMINARY CYPRESS SEMICONDUCTOR CY7C1009 128Kx 8 Static RAM Features Functional Description • Highspeed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 1020 mW

TAA550

Abstract: ac voltage stabilizer circuit diagram TAA550B TBA271B tba 150 A TAA 550 TAA550 3 taa550a stabiliser circuit diagram tba 271
Contextual Info: LINEAR INTEGRATED C I R C U I T TAA550 TBA 271 VOLTAGE STABILIZER • LOW TEMPERATURE COEFFICIENT • LOW ZENER RESISTANCE The TAA 550/TBA 271 Is a m onolithic integrated voltage stab ilize r in a TO -18 two pins metal case. It is especially designed as voltage sup plier for varicap diodes in television

CY7C1009

Abstract: 7C1009 A14C
Contextual Info: PRELIMINARY r y f|pPA RJL- lrP Anni I CY7C1009 128Kx 8 Static RAM Features Functional Description • Highspeed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 1020 mW • Low standby power — 250 mW The CY7C1009 is a high-performance

CY7C161A

Abstract: CY7C162A
Contextual Info: CYPRESS SEM IC ONDUCTOR bSE D • ESflTbbS 000^034 40^ « C Y P CY7C161A CY7C162A P Y p p trc c ; SEMICONDUCTOR Features Functional Description • High speed — 20 ns tAA • CMOS for optimum speed/power • Transparent write 7C161A • Low active power

Q67100-Q1092

Abstract: Q67100-Q1093 Q67100-Q1094 WL10
Contextual Info: 2M x 8-Bit Dynamic RAM HYB5117800BSJ-50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time 13 15 20 ns tAA Access time from address

transistor 6bn

Abstract: Nippon capacitors
Contextual Info: HB56H132B/SB-6BN/7BN 1,048,576-word x 32-bit High Density Dynamic RAM Module ADE-203-550A Z Rev.1.0 Feb. 20, 1996 Description The HB56H132 is a 1M × 32 dynamic RAM module, mounted 2 pieces of 16-Mbit DRAM (HM5118165BJ) sealed in SOJ package. The HB56H132 offers Extended Data Out (EDO) page Mode as a high speed access time.

Nippon capacitors

Abstract: transistor 6bn Hitachi DSA0071
Contextual Info: HB56H132B/SB-6BN/7BN 1,048,576-word x 32-bit High Density Dynamic RAM Module ADE-203-550A Z Rev.1.0 Feb. 20, 1996 Description The HB56H132 is a 1M × 32 dynamic RAM module, mounted 2 pieces of 16-Mbit DRAM (HM5118165BJ) sealed in SOJ package. The HB56H132 offers Extended Data Out (EDO) page Mode as a high speed access time.

44-PIN

Abstract: LH5364000N A6527
Contextual Info: CMOS 64M 8M x 8/4M × 16 Mask-Programmable ROM LH5364000 FEATURES • 8,388,608 words × 8 bit organization (Byte mode) 4,194,304 words × 16 bit organization (Word mode) • Access time: 150 ns (MAX.) • Power consumption: Operating: 385 mW (MAX.) Standby: 550 µW (MAX.)

44-PIN

Abstract: LH5324500 LH5324500N
Contextual Info: LH5324500 FEATURES • 3,145,728 words x 8 bit organization Byte mode 1,572,864 words × 16 bit organization (Word mode) • Access time: 150 ns (MAX.) • Power consumption: Operating: 357.5 mW (MAX.) Standby: 550 µW (MAX.) • Static operation • TTL compatible I/O

42-PIN

Abstract: 44-PIN
Contextual Info: CMOS 16M 2M x 8/1M × 16 Mask-Programmable ROM LH5316500C FEATURES • 2,097,152 words × 8 bit organization (Byte mode) 1,048,576 words × 16 bit organization (Word mode) • Access time: 150 ns (MAX.) • Power consumption: Operating: 275 mW (MAX.) Standby: 550 µW (MAX.)

42-PIN

Abstract: 44-PIN trc 5296
Contextual Info: CMOS 16M 2M x 8/1M × 16 Mask-Programmable ROM LH5316600 FEATURES • 2,097,152 words × 8 bit organization (Byte mode) 1,048,576 words × 16 bit organization (Word mode) • Access time: 100 ns (MAX.) • Power consumption: Operating: 550 mW (MAX.) Standby: 2750 µW (MAX.)

Contextual Info: LH5316600 FEATURES • 2,097,152 words x 8 bit organization Byte mode 1,048,576 words × 16 bit organization (Word mode) • Access time: 100 ns (MAX.) • Power consumption: Operating: 550 mW (MAX.) Standby: 2750 µW (MAX.) • Static operation CMOS 16M (2M × 8/1M × 16) MROM

48-PIN

Contextual Info: LH534P00A FEATURES • 524,288 words x 8 bit organization Byte mode 262,144 words × 16 bit organization (Word mode) • Access time: 120 ns (MAX.) • Power consumption: Operating: 357.5 mW (MAX.) Standby: 550 µW (MAX.) • Static operation • TTL compatible I/O

Contextual Info: LH5332P00 FEATURES • 4,194,304 words x 8 bit organization Byte mode 2,097,152 words × 16 bit organization (Word mode) • Access time: 120 ns (MAX.) • Power consumption: Operating: 440 mW (MAX.) Standby: 550 µW (MAX.) • Static operation • TTL compatible I/O

42-PIN

Contextual Info: LH5324A00 CMOS 24M 1.5M x 16 Mask-Programmable ROM FEATURES PIN CONNECTIONS • 1,572,864 words × 16 bit organization • Access time: 150 ns (MAX.) • Power consumption: Operating: 357.5 mW (MAX.) Standby: 550 µW (MAX.) • Static operation • TTL compatible I/O