MD 202
Abstract: MW SW front END SW 3395 6V TAA 621 applications 13831 epos Electronics TAA 521 A TEXAS CT 306 AS7C1025 AS7C31025
Text: High Performance 128Kx8 CMOS SRAM AS7C1025 AS7C31025 128K×8 CMOS SRAM Common I/O Preliminary information Features • Organization: 131,072 words × 8 bits • High speed - 10/12/15/20 ns address access time - 3/3/4/5 ns output enable access time • Low power consumption
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AS7C1025
AS7C31025
32-pin
AS7C31025)
MD 202
MW SW front END
SW 3395 6V
TAA 621 applications
13831
epos Electronics
TAA 521 A
TEXAS CT 306
AS7C1025
AS7C31025
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TAA 621 applications
Abstract: TAA 521 A taa 621 63RD MD 202 Concord Electronics SW 3395 6V TAA 761 A AS7C3513 AS7C513
Text: High Performance 32Kx16 CMOS SRAM AS7C513 AS7C3513 32K×16 CMOS SRAM Advance information Features • Organization: 32,768 words × 16 bits • High speed - 12/15/20 ns address access time - 6/8/10 ns output enable access time • Low power consumption
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AS7C513
AS7C3513
44-pin
AS7C3513)
TAA 621 applications
TAA 521 A
taa 621
63RD
MD 202
Concord Electronics
SW 3395 6V
TAA 761 A
AS7C3513
AS7C513
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TAA 621
Abstract: MD 202 TAA 621 applications AS7C1026-15JC AS7C1026 AS7C31026 7C1026 AS7C31026-25JC AS7C1026-25JC J-Squared Technologies
Text: High Performance 64Kx16 CMOS SRAM AS7C1026 AS7C31026 64K×16 CMOS SRAM Preliminary information Features • Organization: 65,536 words × 16 bits • High speed - 12/15/20/25 ns address access time - 6/8/10/12 ns output enable access time • Low power consumption
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AS7C1026
AS7C31026
44-pin
85titute
TAA 621
MD 202
TAA 621 applications
AS7C1026-15JC
AS7C1026
AS7C31026
7C1026
AS7C31026-25JC
AS7C1026-25JC
J-Squared Technologies
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Untitled
Abstract: No abstract text available
Text: CY62156ESL MoBL 8-Mbit 512 K x 16 Static RAM 8-Mbit (512 K × 16) Static RAM Features applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Place the device
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CY62156ESL
I/O15)
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Untitled
Abstract: No abstract text available
Text: CY62146E MoBL 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an automatic power down feature that reduces power consumption
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CY62146E
44-pin
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Untitled
Abstract: No abstract text available
Text: CY62126ESL MoBL Automotive 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the
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CY62126ESL
I/O15)
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Untitled
Abstract: No abstract text available
Text: CY62187EV30 MoBL 64-Mbit 4 M x 16 Static RAM 64-Mbit (4 M × 16) Static RAM ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power
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CY62187EV30
64-Mbit
I/O15)
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AN1064
Abstract: CY62147DV18 CY62147EV18 CY62147EV18LL
Text: CY62147EV18 MoBL 4-Mbit 256K x 16 Static RAM is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the
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CY62147EV18
I/O15)
AN1064
CY62147DV18
CY62147EV18LL
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Untitled
Abstract: No abstract text available
Text: CY62167EV18 MoBL 16-Mbit 1 M x 16 Static RAM 16-Mbit (1 M × 16) Static RAM Features applications such as cellular telephones. The device also has an automatic power down feature that reduces power consumption by 99 percent when addresses are not toggling. Place the device
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CY62167EV18
16-Mbit
I/O15)
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CY62148E
Abstract: No abstract text available
Text: CY62148E MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features advanced circuit design to provide ultra low standby current. This is ideal for providing More Battery Life (MoBL) in portable applications. The device also has an automatic power-down
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CY62148E
CY62148B
32-pin
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Untitled
Abstract: No abstract text available
Text: CY62147EV18 MoBL 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an
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CY62147EV18
I/O15)
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CY62148E
Abstract: No abstract text available
Text: CY62148E MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features advanced circuit design to provide ultra low standby current. This is ideal for providing More Battery Life (MoBL) in portable applications. The device also has an automatic power-down
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CY62148E
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Untitled
Abstract: No abstract text available
Text: CY62147EV30 MoBL Automotive 4-Mbit 256 K x 16 Static RAM 4-Mbit (256 K × 16) Static RAM Features portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling.
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CY62147EV30
CY62147DV30
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Untitled
Abstract: No abstract text available
Text: CY62148DV30 4-Mbit 512 K x 8 MoBL Static RAM 4-Mbit (512 K × 8) MoBL® Static RAM Features • Temperature Ranges ❐ Industrial: –40 °C to 85 °C ■ Very high speed: 55 ns ❐ Functional Description Wide voltage range: 2.20 V–3.60 V ■ Pin-compatible with CY62148CV25, CY62148CV30 and
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CY62148DV30
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AN1064
Abstract: CY62158ELL-45ZSXI
Text: CY62158E MoBL 8-Mbit 1M x 8 Static RAM 8-bit (1M x 8) Static RAM is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power
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CY62158E
AN1064
CY62158ELL-45ZSXI
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CY62148E
Abstract: No abstract text available
Text: CY62148ESL MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Higher speed up to 55 ns ■ Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical standby current: 1 µA
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CY62148ESL
CY62148E
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CY62148E
Abstract: cy 4902
Text: CY62148ESL MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Higher speed up to 55 ns ■ Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical standby current: 1 µA
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CY62148ESL
CY62148E
cy 4902
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Untitled
Abstract: No abstract text available
Text: CY62126ESL MoBL 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the
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CY62126ESL
44-pin
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Untitled
Abstract: No abstract text available
Text: CY62146E MoBL 4-Mbit 256K x 16 Static RAM Features applications such as cellular telephones. The device also has an automatic power down feature that reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when
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CY62146E
I/O15)
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00107
Abstract: No abstract text available
Text: CY62146E MoBL 4-Mbit 256K x 16 Static RAM Features applications such as cellular telephones. The device also has an automatic power down feature that reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when
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CY62146E
44-pin
00107
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Untitled
Abstract: No abstract text available
Text: CY62158E MoBL 8-Mbit 1 M x 8 Static RAM 8-Mbit (1 M × 8) Static RAM Features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an
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CY62158E
44-pin
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Untitled
Abstract: No abstract text available
Text: CY62146ESL MoBL 4-Mbit 256K x 16 Static RAM Features applications such as cellular telephones. The device also has an automatic power down feature that reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when
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CY62146ESL
44-pin
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TAA 621
Abstract: No abstract text available
Text: January 1994 Edition 1.0 FUJITSU DATA SHEET MB82V009-15 CMOS 1M-BIT HIGH SPEED SRAM 131,072-WORD x 9-BIT HIGH SPEED STATIC RANDOM ACCESS MEMORY WITH +3.3V SUPPLY The Fujitsu MB82V009 is 131,072-word x 9-bit high speed static random access memory fabricated with CMOS technology.
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MB82V009-15
072-WORD
MB82V009
400mil
36-pin
500mV
MB82V009-15
TAA 621
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PC702V
Abstract: No abstract text available
Text: SHARP PC702V High Collector-emitter Voltage Type Photocoupler PC702V # Lead forming type I type and taping reel type ( P type ) are also available. ( P C 7 0 2 V I/P C 7 0 2 V P ) TUV ( VDE0884 ) approved type is also available as an option. • Features
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PC702V
VDE0884
E64380
PC702V
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