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    TAA 865 A Search Results

    TAA 865 A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF70865AN80FPV Renesas Electronics Corporation 32-bit Microcontrollers Visit Renesas Electronics Corporation
    DF70865AD80FPV Renesas Electronics Corporation 32-bit Microcontrollers Visit Renesas Electronics Corporation
    74SSTUBH32865ABKG Renesas Electronics Corporation 28-Bit 1:2 Registered Buffer for DDR2 Visit Renesas Electronics Corporation
    74SSTUBF32865ABKG Renesas Electronics Corporation 28-Bit 1:2 Registered Buffer with Parity Visit Renesas Electronics Corporation
    74SSTUBF32865ABKG8 Renesas Electronics Corporation 28-Bit 1:2 Registered Buffer with Parity Visit Renesas Electronics Corporation

    TAA 865 A Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TAA865A Unknown IC Datasheets - Shortform Scan PDF
    TAA865A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    TAA865A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    TAA865A Siemens ICs / Amplifiers Scan PDF
    TAA865A Telefunken Electronic Electronic Component Data Book 1976 Scan PDF
    TAA865A Telefunken Electronic Integrated Circuits 1977 Scan PDF

    TAA 865 A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    203704B

    Abstract: 704B 74LVT16244 HB56UW872E-6A HB56UW872E-7A Hitachi DSA00200 Nippon capacitors
    Text: HB56UW872E Series 8388608-word x 72-bit High Density Dynamic RAM Module ADE-203-704B Z Rev. 2.0 Jun. 9, 1997 Description The HB56UW872E belongs to 8-byte DIMM (Dual in-line Memory Module) family , and have been developed an optimized main memory solution for 4 and 8-byte processor applications. The


    Original     		PDF HB56UW872E 8388608-word 72-bit ADE-203-704B 64-Mbit HM5164805ATT) 16-bit 74LVT16244) 203704B 704B 74LVT16244 HB56UW872E-6A HB56UW872E-7A Hitachi DSA00200 Nippon capacitors

    Hitachi DSA002742

    Abstract: Nippon capacitors
    Text: HB56UW872E Series 8388608-word x 72-bit High Density Dynamic RAM Module ADE-203-704B Z Rev. 2.0 Jun. 9, 1997 Description The HB56UW872E belongs to 8-byte DIMM (Dual in-line Memory Module) family , and have been developed an optimized main memory solution for 4 and 8-byte processor applications. The


    Original     		PDF HB56UW872E 8388608-word 72-bit ADE-203-704B 64-Mbit HM5164805ATT) 16-bit 74LVT16244) Hitachi DSA002742 Nippon capacitors

    Hitachi DSA002742

    Abstract: Nippon capacitors
    Text: HB56AW872E Series 8388608-word x 72-bit High Density Dynamic RAM Module ADE-203-707B Z Rev. 2.0 Jun. 6, 1997 Description The HB56AW872E belongs to 8-byte DIMM (Dual in-line Memory Module) family , and has been developed an optimized main memory solution for 4 and 8-byte processor applications. The


    Original     		PDF HB56AW872E 8388608-word 72-bit ADE-203-707B 64-Mbit HM5164800ATT) 16-bit 74LVT16244) Hitachi DSA002742 Nippon capacitors

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY PDM4M4110 512K x 32 CMOS Static RAM Module Features n n n n n n High-density 2 megabyte Static RAM module Low profile 72-pin ZIP Zig-zag In-line vertical Package or 72-pin SIMM (Single In-line Memory Module) Fast access time: 15 ns (max.) Surface mounted plastic components on an epoxy


    Original     		PDF PDM4M4110 72-pin PDM4M4110 i/15/96

    Hitachi DSA00164

    Abstract: Nippon capacitors
    Text: HB56UW872E-A Series 8388608-word x 72-bit High Density Dynamic RAM Module ADE-203-820A Z Rev. 1.0 Sep. 12, 1997 Description The HB56UW872E-A belongs to 8-byte DIMM (Dual in-line Memory Module) family , and have been developed an optimized main memory solution for 4 and 8-byte processor applications. The


    Original     		PDF HB56UW872E-A 8388608-word 72-bit ADE-203-820A 64-Mbit HM5164805A) 16-bit 74LVT16244) Hitachi DSA00164 Nippon capacitors

    Hitachi DSA00164

    Abstract: Nippon capacitors
    Text: HB56AW872E-A Series 8388608-word x 72-bit High Density Dynamic RAM Module ADE-203-815A Z Rev. 1.0 Aug. 20, 1997 Description The HB56AW872E-A belongs to 8-byte DIMM (Dual in-line Memory Module) family , and has been developed an optimized main memory solution for 4 and 8-byte processor applications. The


    Original     		PDF HB56AW872E-A 8388608-word 72-bit ADE-203-815A 64-Mbit HM5164800A) 16-bit 74LVT16244) Hitachi DSA00164 Nippon capacitors

    CAT28LV65

    Abstract: No abstract text available
    Text: Preliminary CAT28LV65 64K-Bit CMOS PARALLEL E2PROM FEATURES • 3.0V to 3.6V Supply ■ CMOS and TTL Compatible I/O ■ Read Access Times: ■ Automatic Page Write Operation: – 1 to 32 Bytes in 5ms – Page Load Timer – 250/300/350ns ■ Low Power CMOS Dissipation:


    Original     		PDF CAT28LV65 64K-Bit 250/300/350ns 28LV65 8mmx13 500/Reel 250ns 300ns 350ns 28LV65 CAT28LV65

    TFK 236

    Abstract: TFK 4 232 TAA861A schaltungen 861 taa 861 tFK 229 236 TFK 36Tfk auo 002 TAA865A
    Text: TAA 861 • TAA 861 A TAA 865 • TAA 865 A Monolithisch Integrierte Schaltungen Monolithic Integrated Circuits Anwendungen: O perationsverstärker in Regelungstechnik, NF-Schaltungen, Analog-Rechnertechnik, A u to e le ktro n ik usw. Applications: O perational am plifiers in autom atic co n tro l technique, audio circuits, analogue


    OCR Scan     		PDF

    TL1709

    Abstract: TAA861A taa865 1741 TAA861 TL3709C TL4741C TL3741C taa 861 TL3741
    Text: Operational amplifiers and voltage regulators 17. 1 TL-Serie 3 7 . . J 17.C 37 . C > 47 . C J iamb = -5 5 . + 125°C t. Type Case Dimensions page 50 Short description Operational amplifiers T L 1709 5 G 8 DIN 41873 Fig. 9 TL 1709 C 5 G 8 DIN 41873


    OCR Scan     		PDF TL1709 865/TAA TAA861A taa865 1741 TAA861 TL3709C TL4741C TL3741C taa 861 TL3741

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT MC-428000LAF72 3.3 V OPERATION 8M-WORD BY 72-BIT DYNAMIC RAM MODULE FAST PAGE MODE ECC Description The MC-428000LAF72 is a 8 388 608 words by 72 bits dynamic RAM module on which 9 pieces of 64M DRAM ( u-PD 4264800) are assembled.


    OCR Scan     		PDF MC-428000LAF72 72-BIT MC-428000LAF72 428000LAF72-A50 428000LAF72-A60 428000LAF72-A70 110cycles, b4275S5 III47S

    information applikation

    Abstract: information applikation mikroelektronik Mikroelektronik Information Applikation applikation heft A109D mikroelektronik DDR a 109 opv VEB mikroelektronik schaltungen 861 TAA 761 A
    Text: m D ^ a r ^ i e l e l Information Applikation - c t e n a n i l - c m ik ^ o e le k t3r*anik Information Applikation Heft 22: OPERATIONS-VERSTÄRKER- IS Teil 2 veb halbleiterwepk fran k fu rt/o d er im v e b k o m b i n a t m ik ro e le k tro n U c KAMMER DER TECHNIK


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI H Y 5 3 1 0 0 0 A S e r ie s 1M x 1-bit CMOS DRAM DESCRIPTION The HY531000A is the 2nd generation and last dynamic RAM organized 1,048,576 x 1-bit. The HY531000A utilizes Hyundai's CMOS silico n gate process techno logy as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY531000A HY531000Ato 300mll ML750Ã 1AB01-20-MAY95 000MD5Ã HY531000AS HY531000ALS

    Untitled

    Abstract: No abstract text available
    Text: KM48C2000A/AL/ALL/ASL CMOS DRAM 2 M x 8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: ' The Samsung KM48C200QA/AL/ALLVASL is a high speed CMOS 2,097,152 b it x 8 Dynamic Random Access Memory. Its design is optim ized for high


    OCR Scan     		PDF KM48C2000A/AL/ALL/ASL KM48C200QA/AL/ALLVASL KM48C2000A/AL/ALL/ASL-5 KM48C2000A/AIVALL/ASL-6 110ns KM48C2000A/AL/ALL/ASL-7 130ns KM48C2000A/AL/ALL/ASL-8 150ns

    Untitled

    Abstract: No abstract text available
    Text: SY10L474-5/7 SY100L474-5/7 SY101L474-5/7 LOW-POWER 1K x 4 ECLRAM SYNERGY SEMICONDUCTOR DESCRIPTION FEATURES • Address access time, tAA: 5/7ns max. ■ Chip select access time, tAc: 3ns max. ■ Write pulse width, tww: 5ns min. ■ Write recovery times under 5ns


    OCR Scan     		PDF SY10L474-5/7 SY100L474-5/7 SY101L474-5/7 -180mA 10K/100K SY10L/100L7101L474-7FCS F24-1 SY10L/10017101L474-7JCS J28-1 000113S

    42S4260

    Abstract: upd 40pin
    Text: DATA SHEET M O S INTEGRATED CIRCUIT juPD42S4260AL, 424260AL 3.3 V OPERATION 4 M BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The juPD42S4260AL, 424260AL are 262 144 words by 16 bits dynamic CMOS RAMs. The fast page mode and


    OCR Scan     		PDF uPD42S4260AL uPD424260AL 16-BIT, iPD42S4260AL 44-pin 40-pin 043io P40LE-400A-2 42S4260 upd 40pin

    Untitled

    Abstract: No abstract text available
    Text: H Y 5 1 V 1 7 4 1 0 A • H Y U N D A I S e r ie s 4M X 4-blt CMOS DRAM with WPB PRELIMINARY DESCRIPTION The HY51 V17410Ais the new generation and fast dynamic RAM organized 4,194,304x 4-bit. The HY51V17410A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF V17410Ais HY51V17410A HY51V1741 D36-00-MAY94 4b75Q HY51V17410A HY51V17410AJ HY51V17410ASLJ HY51V17410AT HY51V1741OASLT

    Nippon capacitors

    Abstract: No abstract text available
    Text: HB56UW872E-A Series 8388608-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-820A Z Rev. 1.0 Sep. 12, 1997 Description The HB56UW872E-A belongs to 8-byte DIMM (Dual in-line Memory Module) family , and have been developed an optimized main memory solution for 4 and 8-byte processor applications. The


    OCR Scan     		PDF HB56UW872E-A 8388608-word 72-bit ADE-203-820A 64-Mbit HM5164805 16-bit 74LVT16244) Nippon capacitors

    Untitled

    Abstract: No abstract text available
    Text: HY51V17400B Series •HYUNDAI 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V17400B is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY 51V17400B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51V17400B 51V17400B HY51V17400Bto 1AD48-00-MAY95 HY51V17400BJ HY51V17400BSU HY51V17400BT HY51V17400SLT

    nec A2C

    Abstract: 8160l1
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD42S18160L, 4218160L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /iPD42S18160L, 4218160L are 1,048,576 words by 16 bits CMOS dynamic RAMs. The fast page mode and


    OCR Scan     		PDF uPD42S18160L uPD4218160L 16-BIT, /iPD42S18160L, 4218160L PD42S18160L 50-pin 42-pin PD42S18160L-A60, 4218160L-A60 nec A2C 8160l1

    Untitled

    Abstract: No abstract text available
    Text: HB56D51236 Series 524,288-Word x 36-Bit High Density Dynamic RAM Module • DESCRIPTION The HB56D51236B is a 512k x 36 dynamic RAM module, mounted 16 pieces of 1 Mbit DRAM HM514256JP sealed in SOJ package and 8 pieces of 256k-bit DRAM (HM51256CP) sealed in PLCC package. An outline of the HB56D51236B is


    OCR Scan     		PDF HB56D51236 288-Word 36-Bit HB56D51236B HM514256JP) 256k-bit HM51256CP) 72-pin

    SY10L474-7

    Abstract: SY10L474 sy100l474 10L474
    Text: * SY10L474-5/7 SY100L474-5/7 SY101 L474-5/7 LOW-POWER 1K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES DESCRIPTION • Address access time, tAA: 5/7ns max. ■ Chip select access time, tAC: 3ns max. ■ Write pulse width, tww: 5ns min. ■ Write recovery times under 5ns


    OCR Scan     		PDF SY10L474-5/7 SY100L474-5/7 SY101 L474-5/7 SY10L7100L/101L474 4096-bit 1024-words-by-4-bits 10K/100K SY10L474-7 SY10L474 sy100l474 10L474

    Untitled

    Abstract: No abstract text available
    Text: rz rz SGS-THOMSON G«[f3 6 [ILiOT@«§ MK48Z02 MK48Z12 CMOS 2K x 8 ZEROPOWER SRAM • PREDICTED WORST CASE BATTERY LIFE OF 11 YEARS @ 70°C ■ DATA RETENTION IN THE ABSENCE OF POWER ■ DATA SECURITY PROVIDED BY AUTOMATIC WRITE PROTECTION DURING POWER FAILURE


    OCR Scan     		PDF MK48Z02 MK48Z12 PHDIP24 24-PIN MK48Z02 MK48Z12 K48Z02, PHDIP24

    Untitled

    Abstract: No abstract text available
    Text: □PM DPS512X16A3 Dense-Pac Microsystems, Inc. CERAMIC 512KX 16 CMOS SRAM MODULE O PRELIMINARY D ESC R IP TIO N : The D PS512X16A3 "D EN SE-STA CK" module is a re v o lu tio n a ry n e w m e m o ry su b sy ste m using Dense-Pac Microsystems' ceramic Stackable Leadless


    OCR Scan     		PDF DPS512X16A3 512KX PS512X16A3 DPS512X16A3 30A045-10

    k3882

    Abstract: TAA 981 E25C5 TC8066PB sn 8400 sn 8408 selen-gleichrichter Halbleiterbauelemente DDR A109D SY 170
    Text: [ n r D D lk D ^ i^ B lB k f a n a n ilK Halbleiter-Bauelemente Kurzinformation D ie M ik ro e le k tro n ik e rw e is t sich in te rn a tio n a l m e h r u n d m eh r a ls e in e n ts c h e id e n d e r F a k to r be i d e r D u rc h s e tz u n g d e s w isse n s c h a ftlic h -te c h n is c h e n F o rts c h ritte s a lle r B ere ich e d e r W irts c h a ft un d


    OCR Scan     		PDF