TAA 900 Search Results

Contextual Info: TAA Compliant AVR Series Line-Interactive UPS System - Affordable line-interactive protection for PCs and workstations Highlights Federal Trade Agreements Act / TAA Compliant for GSA Schedule purchases 900VA ultra-compact 120V line MODEL NUMBER: AVR900UTAA

Contextual Info: ^ CY10E422 CY100E422 » ss f^YPPP’^c; • 256 x 4-bit organization • Ultra high speed/standard power — tAA = 3.5 ns — U : e = 220 niA • Low-power version — tAA = 5 ns — I e e " 150 inA • Both 10KH/10K- and 100K-compatible I/O versions • 10K/10KH military version

colour tv circuit diagram

Abstract: colour tv power supply circuit diagram colour television power circuit diagram TAA 293 matrix COLOUR TV SCHEMATIC DIAGRAM 630S 630-S TAA630S colour television schematics colour tv circuit
Contextual Info: TAA 630S LINEAR INTEGRATED CIRCUIT SYNCHRONOUS DEMODULATOR FOR PAL COLOUR TV SETS The TAA 630 S is a silico n m on olithic integrated c irc u it in a 16-lead dual in -lin e plastic package. It incorporates the follow ing fun ctions: — active synchronous dem odulators fo r F B-Y and ± F (R-Y) signals

b1099

Abstract: B-10-99
Contextual Info: CY7B1099 PRELIMINARY CYPRESS SEMICONDUCTOR Features Functional Description • High speed — tAA = 6 ns • BiCMOS for optimum speed/power • Low active power — 900 mW • Low standby power — 350 mW • Automatic power-down when deselected • Output enable OE feature

Contextual Info: Tripp Lite 1111 West 35th Street Chicago, IL 60609 USA Telephone: + 773 869 1234 E-mail: saleshelp@tripplite.com Model #: AVR900UTAA TAA Compliant AVR Series Line-Interactive UPS System - Affordable line-interactive protection for PCs and workstations Highlights

Contextual Info: CY7B1094 CY7B1095 CY7B1096 a. PRELIMINARY s s s r^ Y P P F C ;9 y SEMICONDUCTOR Features • High speed — tAA = 6 ns • BiCMOS for optimum speed/power • Low active power — 900 mW • Low standby power — 350 mW • Automatic power-down when deselected

IBM11M32735B

Abstract: IBM11M32735C
Contextual Info: IBM11M16730CB16M x 72 E13/11, 3.3V, Au. IBM11M32735B IBM11M32735C 32M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module - • 32Mx72 Dual Bank Extended Data Out Mode DIMM • Performance: tRAC tCAC tAA tRC tHPC • •

Contextual Info: r CYPRESS SEMICONDUCTOR Features • Open em itter output for ease of memory expansion • 16,384 x 4 bits organization • Ultra high speed/standard power • — tAA = 7 ns Industry standard pinout Functional Description — IE E = 180 mA • CY1E494 CY10E494

Contextual Info: IBM11S1320NN IBM11S1320NL 1M x 32 SODIMM Module Features • 72-Pin Small Outline Dual-ln-Line Memory Module • Performance: -60 -70 1rac RAS Access Time 60ns 70ns toAC CAS Access Time 15ns 20ns tAA Access Time From Address 30ns 35ns I rc Cycle Time 110ns 130ns

edo dram 60ns 72-pin simm

Abstract: SA14-4338-01
Contextual Info: IBM11D2320H2M x 3210/10, 5.0V, LC, Sn/PbMMDS45DSU-021040820. MMDS45DSU-021040820. IBM11D2320H 2M x 32 DRAM Module Features • 72-Pin Single-In-Line Memory Module • Performance: -60 -70 tRAC RAS Access Time 60ns 70ns tCAC CAS Access Time 15ns 20ns tAA Access Time From Address

Contextual Info: CY10E422 CY100E422 i s ^ Y p p p c ;< ^ • ■ ■ ^ s \ # f SEMICONDUCTOR Features • Open em itter output for ease of memory expansion • Ultra high speed/standard power — tAA = 3.5 ns • Industry-standard pinout — Iee = 220 mA Functional Description

SO-DIMM 144-pin

Contextual Info: IBM11T1640L 1M x 64 144 PIN SODIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • Performance: -60 -70 tRAC RAS Access Time 60ns 70ns fcAC CAS Access Time 15ns 20ns tAA Access Time From Address 30ns

taa 861

Contextual Info: IBM11S1320NL1M x 3212/8, 5.0V, Au. IBM11S1320NN1M x 3212/8, 3.3V, Au. IBM11S8320HP 8M x 32 SO DIMM Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: -60 tRAC RAS Access Time 60ns tCAC CAS Access Time 15ns tAA Access Time From Address

Contextual Info: SY10L474-5/7 SY100L474-5/7 SY101L474-5/7 LOW-POWER 1K x 4 ECLRAM SYNERGY SEMICONDUCTOR DESCRIPTION FEATURES • Address access time, tAA: 5/7ns max. ■ Chip select access time, tAc: 3ns max. ■ Write pulse width, tww: 5ns min. ■ Write recovery times under 5ns

K74 PACKAGE DIAGRAM

Abstract: IR 10e 1h
Contextual Info: = ^~' _ = p r e l im in a r y . ^ SEMICONDUCTOR Features • CY10E494 CY100E494 CY101E494 16,384 x 4 bits organization • Ultra high speed/standard power — tAA = 7 ns — I f E — 180 mA 16,384 x 4 ECL Static RAM • Open emitter output for ease of

Contextual Info: * SY10494-6/7 SY100494-6/7 SY101494-6/7 16K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES DESCRIPTION • Address access time, tAA: 6/7ns max. ■ Chip select access time, tAc: 3ns max. ■ Edge rate, tr/tf: 500ps typ. ■ Write recovery times under 5ns ■ Power supply current,

Contextual Info: * SY10494-5 SY10494-6 16K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Address access time, tAA: 5/6ns max. Chip select access time, tAc: 3ns max. Edge rate, tr/tf: 500ps typ. Eliminates write recovery glitch found on

SY101L484

Contextual Info: TD013Ö1 QDDD07C1 b27 S7E D SYNERGY SEMICONDUCTOR Address access time, tAA: 7/8/1 Ons max. Chip select access time, tAc: 3/4/5ns max. Eliminates write recovery glitch found on competitors’ ECL RAMs Low power supply current, I e e : -180m A min. Designed for alpha particle immunity

Contextual Info: IBM11S4325BP IBM11S4325BM 4M X 32 SO DIMM Module Features 72-Pin Small Outline Dual-In -Line Memory Module Performance: -60 I -70 I i tRAc i RAS Access Time 60ns j 70ns j i tcAG i CAS Access Time 15ns I 20ns j i tAA I Access Time From Address j 30ns j 35ns !

Contextual Info: * SY10484-3.5/4/5/6 4K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Address access time, tAA: 3.5/4/5/6ns max. Chip select access time, tAC: 3ns max. Edge rate tr/tf : 500ps (typ.) Eliminates write recovery glitch found on

Contextual Info: SYNERGY * SEMI CONDUCTOR SYNERGY SEMICONDUCTOR S7E D • «ìGOiafil b3T ■ SY10L494-7/8/10 SY100L494-7/8/10 SY 101L494-7/8/10 LOW POWER 16K x 4 ECL RAM FEATURES OGQOOaa DESCRIPTION ■ Address access time, tAA: 7/8/1 Ons max. ■ Chip select access time, tAc: 3/4/5ns max.

Contextual Info: * SY10L494-10 SY100L494-10 SY101L494-10 LOW-POWER 16K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Address access time, tAA: 10ns max. Chip s e le c t a c c e s s tim e , tAc: 3ns m ax. Write recovery times under 5ns

a417b

Contextual Info: CY7B1094 CY7B1095 CY7B1096 . ä PRELIMINARY s O s r# " ‘Y P P F . Ç . ^ — SEMICONDUCTOR Features • H igh speed — tAA = 6 ns • B iC M O S fo r o p tim u m speed/pow er • Low active pow er — 900 mW • Low stan d b y pow er — 350 mW • A utom atic power-down w hen

AH 101K

Abstract: sd 484 ip
Contextual Info: CY101E484 CY10E484 CY100E484 CYPRESS SEMICONDUCTOR W Features • 40% x 4-blt organization • U ltra high speed/standard power — tAA = 4 , 5 ns — I ee s 320 mA • Low-power version — ‘ a a = 7, 10 ns — I ee = 200 mA • Both 10KH/10K- and 100K-compatible I/O versions