TABLE10 Search Results
TABLE10 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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TSB41LV06
Abstract: TSB12LV23
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TSB41LV06A 1394a SLLS363A P1394a TSB41LV06 TSB12LV23 | |
TSB12LV23
Abstract: TSB41LV06
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TSB41LV06A 1394a SLLS363A P1394a TSB12LV23 TSB41LV06 | |
45VM32160DContextual Info: IS42/45VM32160D 4M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45VM32160D are mobile 536,870,912 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are |
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IS42/45VM32160D 32Bits IS42/45VM32160D -40oC 16Mx32 IS42VM32160D-6BLI IS42VM32160D-75BLI 90-ball 45VM32160D | |
TRANSISTOR mcr 100-8Contextual Info: MOTOROLA MC33389 SEMICONDUCTOR TECHNICAL DATA SBC System basis chip Advance Information Automotive System Basis Chip The MC33389 is a monolithic integrated circuit combining many functions frequently used by automotive ECUs. It incorporates a low speed fault |
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MC33389 MC33389 100mA 200mA 125kBaud MC33388 TRANSISTOR mcr 100-8 | |
ba1sContextual Info: IS43LR32400E Advanced Information 1M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43LR32400E is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The address lines are multiplexed with the Data |
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IS43LR32400E 32Bits IS43LR32400E Figure38 90Ball -25oC 4Mx32 IS43LR32400E-6BLE ba1s | |
S6B1713A15
Abstract: S6B1713 S6B1713A05-B0CY S6B1713A05-B0CZ S6B1713A15-B0CY S6B1713A15-B0CZ SM 5271 COM132 S6B1713A15-xxXN
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S6B1713 COM33 COM34 COM35 COM46 COM47 COM48 COM62 S6B1713A15 S6B1713 S6B1713A05-B0CY S6B1713A05-B0CZ S6B1713A15-B0CY S6B1713A15-B0CZ SM 5271 COM132 S6B1713A15-xxXN | |
code A106
Abstract: MD18R3268AG0-CM8 MD18R3268AG0-CN1 MD18R3268AG0-CT9 MD18R326GAG0-CM8 MD18R326GAG0-CN1 MD18R326GAG0-CT9 serial presence detect samsung 2010 MARKING A106
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MD18R3268 256/288Mbit 32Mx18) 576Mb 32K/32ms code A106 MD18R3268AG0-CM8 MD18R3268AG0-CN1 MD18R3268AG0-CT9 MD18R326GAG0-CM8 MD18R326GAG0-CN1 MD18R326GAG0-CT9 serial presence detect samsung 2010 MARKING A106 | |
Contextual Info: MS18R1622 4/8 DH0 Revision History Version 1.0 (July 2002) - Based on the 1.1 ver. (July 2002) 288Mbit A-die SO-RIMM Module Datasheet. Page 0 Rev. 1.0 July 2002 MS18R1622(4/8)DH0 (16Mx18)*2(4/8)pcs SO-RIMM™ based on 288Mb D-die, 32s banks,16K/32ms Refresh, 2.5V |
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MS18R1622 288Mbit 16Mx18) 288Mb 16K/32ms | |
CI 3060 elsys
Abstract: rs 3060 cj KS0090 KS* I2C driver LCD driver KS KS0090I SEG60
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KS0090 26COM/64SEG KS0090/90-I KS0090I KS0090I CI 3060 elsys rs 3060 cj KS* I2C driver LCD driver KS SEG60 | |
SM32200K
Abstract: IS42SM32200K
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IS42SM/RM/VM32200K 32Bits IS42SM/RM/VM32200K 200K-6BLI IS42SM32200K-75BLI 90-ball -40oC 2Mx32 IS42RM32200K-6BLI SM32200K IS42SM32200K | |
IS42RM16160E
Abstract: IS42VM16160E-75BLI IS42VM16160E is42vm16160
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IS42/45SM/RM/VM16160E 16Bits IS42/45SM/RM/VM16160E -40oC 16Mx16 IS42SM16160E-6BLI IS42SM16160E-75BLI 54-ball IS42RM16160E IS42VM16160E-75BLI IS42VM16160E is42vm16160 | |
IS43LR16640A
Abstract: IS43LR16640A-5BLI IS43LR16640A-6BLI IS46LR16640A-5BLA1 IS43LR16640A-6BL
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IS43/46LR16640A 16Bits IS43/46LR16640A 16-bit -40oC 64Mx16 IS43LR16640A-5BLI IS43LR16640A-6BLI 60-ball IS43LR16640A IS46LR16640A-5BLA1 IS43LR16640A-6BL | |
AK4628AVQ
Abstract: AK4112B AK4529 AK4628A AKD4628 IEC60958 TDM256
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AK4628A] AK4628A AK4628A 24bit 102dB 106dB MS0385-E-00 AK4628AVQ AK4112B AK4529 AKD4628 IEC60958 TDM256 | |
88128
Abstract: SST55LD019M ata controller flash disk controller write-verify K793
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SST55LD019M SST55LD019MHigh-Performance 16-bit MO-210, 84-tfbga-BW-9x9-450mic-2 84-ball S71312: S71312-01-000 88128 SST55LD019M ata controller flash disk controller write-verify K793 | |
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EQUIVALENT FOR LV1116NContextual Info: Ordering number : EN8262A EN8263A LV1116N/NV Bi-CMOS IC Surround Processor ICs for Electronic Volume Control http://onsemi.com Overview The LV1116N/NV are sound processor ICs developed for use in TV sets. They incorporate the surround processing functions including AViSS , pseudo stereo function, (L+R) output, and the |
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EN8262A EN8263A LV1116N/NV LV1116N/NV EQUIVALENT FOR LV1116N | |
Contextual Info: Ordering number : ENA1046 EN8263A LV1117N/NV Bi-CMOS IC Surround Processor ICs for Electronic Volume Control http://onsemi.com Overview The LV1117N/NV are sound processor ICs developed for use in TV sets. They incorporate the surround processing functions including AViSS , pseudo stereo function, (L+R) output, and the |
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ENA1046 EN8263A LV1117N/NV LV1117N/NV A1046-18/18 | |
46LR32640A
Abstract: Mobile DDR SDRAM
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IS43/46LR32640A 32Bits IS43/46LR32640A 32-bit IS43LR32640A-6BLI 90-ball -40oC 64Mx32 IS46LR32640A-5BLA1 46LR32640A Mobile DDR SDRAM | |
IS42SM16800F-75BLI
Abstract: IS42SM16800F
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IS42SM16800F 16Bits IS42SM16800F -40oC 8Mx16 IS42SM16800F-75BLI 54-ball IS42SM16800F-75BLI | |
Contextual Info: DUAL CHANNEL T1/E1/J1 LONG HAUL/ SHORT HAUL LINE INTERFACE UNIT IDT82V2082 FEATURES: • • • • • • • - Dual channel T1/E1/J1 long haul/short haul line interfaces Supports HPS Hitless Protection Switching for 1+1 protection without external relays |
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IDT82V2082 772KHz TBR12/13 82V2082 | |
Contextual Info: IS66WVE2M16BLL Advanced Information 3.0V Core Async/Page PSRAM Overview The IS66WVE2M16BLL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device includes several |
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IS66WVE2M16BLL IS66WVE2M16BLL 32Mbit 70nsWVE2M16BLL-70TLI 48-ball 48-pin MO-207 | |
Contextual Info: N32D3225LPAW 512K x 32Bits x 2Banks Low Power Synchronous DRAM Description These N32D3225LPAW are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are |
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N32D3225LPAW 32Bits N32D3225LPAW | |
Contextual Info: N128D1618LPAW Advance Information 2M x 16Bits x 4Banks Mobile Synchronous DRAM Description These N128D1618LPAW are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are |
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N128D1618LPAW 16Bits N128D1618LPAW | |
Contextual Info: N128D3218LPAF2 Advance Information 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These N128D3218LPAF2 are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are |
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N128D3218LPAF2 32Bits N128D3218LPAF2 | |
Contextual Info: IS42RM32400F Advanced Information 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42RM32400F are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. These products are offering fully synchronous operation and are |
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IS42RM32400F 32Bits IS42RM32400F 90Ball -25oC 4Mx32 IS42RM32400F-6BLE IS42RM32400F-75BLE |