TAC 2J 105 Search Results

tl 0741

Contextual Info: GM71C4800A/AL GM71CS4800A/AL LG S em icon Co.,Ltd. 524,288 W ORDS x 8 BIT CMOS DYNAM IC RAM Description Features The G M 71C4800A/AL is the new generation dynamic RAM organized 524,288 x 8 bit. GM71C4800A/AL has realized higher density, higher performance and various functions by utilizing

TAC 2J 105

Abstract: TAC 2J 3A1250V
Contextual Info: FILM CAPACITORS FOR USE IN HIGH FREQUENCY AND HIGH VOLTAGE EQUIPMENT • Standaid Ratings W x H x T mm (M e ta lliz e d P o ly p ro p y le n e F ilm C a p a c ito r s ) T A C -S E R IE S \ (H ig h F req u e n cy U se, R esin D ip p e d T ype) • Specifications

TM4SN64EPN10

Abstract: TM2SN64EPN-10 TM48N64EPN TM4SN64EPN-10 TMS626812
Contextual Info: TM2SN64EPN 2097152 BY 64-BIT TM4SN64EPN 4194304 BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULES _ SYNCHRONOUS CLOCK CYCLE TIME *CK3 , {CL = 3 t ACCESS TIME CLOCK TO OUTPUT >CK2 CL = 2) *CK3 (CL = 3) *CK2 (CL = 2) • • • • • • • •

8002K

Abstract: TACB2J224 TACB2G824 TACB2E226 FTACB631V105 f 630 TACB2K563 3152F
Contextual Info: 高周波・大電流用（低圧用） RoHS指令 適合品 （標準品） ◆特 長 ● 弊社独自の円筒構造のため性能が優れております。 ● 通電時の発音が微小です。 （静音対応） ● 体積比で従来の TAC に比べ、平均 50％の小形化達成。

active suspension

Abstract: 3tr5 ujt transistor MSM56V16800E MSM56V16800E-10 MSM56V16800E-8 transistor mark BA
Contextual Info: E2G1053-18-54 O K I Sem iconductor MSM56V16800E Thisversion:,ul 1998 2-Bank x 1,048,576-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16800E is a 2-bank x 1,048,576-word x 8-bit synchronous dynamic RAM, fabricated in Oki’s CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and

LS7261/LS7262

Contextual Info: _ LSI COMPUTER SYSTEMS 54E D LSI/CSI sis- 53D4b0b Q00CH32 blO LSC T 'S X - /J’-02s- LS7260/LS7261 LS7262 Manufacturers of Custom and Standard L S I Circuits 1235 Walt Whitman Road, Melville, N Y 11747-3086 • Tel.: 516 271-0400 • Fax: (516) 271-0405

M27256-2F1

Abstract: M27256 30F1 M27256F1 27256-2 m27256 sgs 27256 eprom M27256-3F1 M27256-4F1 Z8000
Contextual Info: o z> 0 ù > 0 / o SVI2 7 2 5 6 — QQ2Q42- S 6 r S> 256K 32K x 8 c ASABLE PROM FAST ACCESS TIME: 200ns 250ns 300ns 450ns MAX MAX MAX MAX M27256-2F1 M27256F1/M27256F6/M27256-25F1 ' M27256-3F1/M27256-30F1 M27256-4F1/M27256-4F6/M27256-45F1 0 to 70°C STANDARD TEMPERATURE RANGE

D56V62160

Abstract: BA RX transistor d56v621 3tr5
Contextual Info: O K I Semiconductor MD56V62160/H 4-Bank x 1,048,576-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM D E SCRIPTIO N T he M D 5 6 V 6 2 1 6 0 /H is a 4 -b a n k x 1,048,576-w ord x 16-bit sy n c h ro n o u s d y n a m ic R A M , fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs

FOR5J

Abstract: GTO thyristor 100A, 400V TO-220AH TSZ25G 5F13 TSS1G41 s6565g GTO thyristor 5A, 400V MSG100L41 TSS2G41S
Contextual Info: [ Thyristors P h a s e Control T h yristo rs : * i'eak off state v<>!t,tK<‘ and tewrse voilage Average "n-state current 50V 0. IA 0.3A 0.5A IA 2A S F 0 K ÎA 4 2 3A 100V SF0 R 1 H 4 2 SF0 R 3 H 4 2 SFOH5H43 SM H12 S F2 B 4 1 SF3 H 1 4 SF3H41 SF3 H 4 2 SF5 H 1 3

Contextual Info: Nov 2006 HYB18M512160BF-6 HYE18M512160BF-6 HYB18M512160BF-7.5 HYE18M512160BF-7.5 DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM RoHS compliant Data S heet Rev.1.80 HY[B/E]18M512160BF 512-Mbit DDR Mobile-RAM HYB18M512160BF-6; HYE18M512160BF-6 HYE18M512160BF-7.5

736T

Contextual Info: HYM72V32C736T8 , 32Mx72, 32Mx8 based PC133 DESCRIPTION T he H Y M 72V 32 C 736T 8 S e ries are 32M x72bits EC C S ynchro nous DR AM M odules. T he m odules are com posed o f nine 32M x8bits CM O S S ynchronous D R AM s in 400 m il 54pin TS O P -II package, one 2K bit E E PR O M in 8pin TS S O P package on a 168pin glass-e poxy

Contextual Info: irrte1* M51C256H HIGH PERFORMANCE RIPPLEMODETm 256K x 1 CHMOS DYNAMIC RAM M ilita ry M51C256H-15 M51C256H-20 Maximum Access Time ns 150 200 Maximum Column Address Access Time (ns) 70 90 High Reliability Ceramic— 16 Pin DIP Ripplem ode Operation — Continuous Data Rate over 12 MHz

Contextual Info: O K I Semiconductor E2G1052-17-X1 M D 5 6 V 6 2 1 6 0 /H 4-Bank x 1,048,576-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The M D 56V 62160/H is a 4-bank x 1,048,576-w ord x 16-bit synchronous dynam ic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs

Contextual Info: MITSUBISHI LSIs O ’d ' MH16S72VJB-6 r 1,207,959,552-BIT 16,777,216-WORD BY 72-BIT Synchronous DYNAMIC RAM ^ -PRELIMINARY Some of contents are subject to change without notice. DESCRIPTION The MH16S72VJB is 16777216 - word x 72-bit Synchronous

Contextual Info: Preliminary Speo. M it s u b is h i lsis Some contents are subject to change w ithout notice. MH8S64FFC-10,10L 536870912-BIT 8388608 - WORD BY 64-BIT SynchronousDRAM DESCRIPTION The MH8S64FFC is 8388608 - word by 64-bit Synchronous DRAM module. This consists of four

Contextual Info: MITSUBISHI LSIs MH16S72BDFA-7, -8 1,207,959,552-BIT 16,777,216-W O RD BY 72-BIT Synchronous DYNAMIC RAM PRELIMINARY Some of contents are su bject to change w ith o u t notice. DESCRIPTION The MH16S72BDFA is 16777216 - word x 72-bit Synchronous DRAM module. This consist of eighteen

Contextual Info: MITSUBISHI LSIs MH32S72QJA-7, -8 2415919104-BIT 33554432-W O RD BY 72-BIT Synchronous DYNAMIC RAM PRELIMINARY Some of contents are su bject to change w ith o u t notice. DESCRIPTION The MH32S72QJA is 33554432 - word x 72-bit S ynch ron ous DRAM module. This consist of eighteen

68681

Contextual Info: Signetics 68681 Dual Asynchronous Receiver/Transmitter DUART Product Specification Military Microprocessor Products DESCRIPTION The S ignetics 68681 D ual U niversal A syn ch ro n o us R eceiverH Vansm itter (D U AR T) is a sing le -ch ip M O S -LS I co m ­

814400

Abstract: marking CEZ MAS 10 RCD mb814400 MB814400-10 MB814400-12 MB814400-80 ZIP-20P-M02 marking Z1p
Contextual Info: Novem ber 1991 Edition3.0 :• , .-y,-.:. FUJITSU . DATASHEET M B 8 1 4400-80/-10/-12 CMOS 1 M X 4 B I T FAST PAGE MODE DRAM CM O S 1,048,576 x 4 bit Fast Page Mode Dynamic RAM The Fujitsu MB814400 is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304

Contextual Info: I = =• = IBM13N8644HCC IBM13N8734HCC P relim inary 8M x 64/72 O n e-B an k U nbuffered S D R A M M odule Features • 168-Pin Unbuffered 8-Byte Dual In-Line Memory Module • 8Mx64/72 Synchronous DRAM DIMM • Three speed sorts: • -260 and -360 for PC100 applications

JASO d 605-74

Abstract: JIS D 5500 JIS C-3406 LT 7220 JASO 7002 JASO d605 tensile strength crimping pull test AMP connector Mark VII
Contextual Info: AMP Product Specification 108-5165 19 OCT 99 « ¿ w s » Rev. B1 Multi-Interlock Mark II Connector for wire to board termination v —£11 MIC C o n ten ts First 16 pages following this top sheet English version Next 17 pages Japanese version When only one of above versions is supplied to customers, this top sheet shall be

Contextual Info: Preliminary Speo. M it s u b is h i lsis Some contents are subject to change w ithout notice. MH4S64BKG -7,-8,-10 268435456-BIT 4194304 - WORD BY 64-BIT SynchronousDRAM DESCRIPTION The MH4S64BKG is 4194304 - word by 64-bit Synchronous DRAM module. This consists of four

Contextual Info: Preliminary Speo. M it s u b is h i lsis Some contents are subject to change w ithout notice. MH8S64AKD -8,-10,-8L,-10L 536870912-BIT 8388608 - WORD BY 64-BIT SynchronousDRAM DESCRIPTION The MH8S64AKD is 8388608 - word by 64-bit Synchronous DRAM module. This consists of eight

HD63803

Abstract: 63b03 AS3922 W9600 63a03 HD63B03XP HD6303RP mc 1513 HD63B03YP HD63A03RP
Contextual Info: HD6303R,HD63A03R,-HD63B03R CMOS MPU Micro Processing Unit The H D 6303R is an 8-bit CMOS m icro processing u n it which has th e com pletely com patible instruction set w ith th e HD6301V 1, 128 bytes RAM, Serial C om m unication Interface (SCI), parallel I/O po rts and m ulti function tim er are incorpora­