TACAN 41 RF TRANSISTOR Search Results

d1536

Abstract: TRANSISTOR 8019 SD1536-08 TACAN transistor
Contextual Info: SGS-THOMSON S D 15 3 6 -0 8 iy RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS . 100 WATTS typ. IFF 1030 - 1090 MHz . 90 WATTS (min.) DME 1025 - 1150 MHz i 90 WATTS (typ.) TACAN 960 - 1215 MHz

Contextual Info: l i Ma jnm jf i.jninfii m Commerce Drive microsemi * «* Tel: 215 631-9840 Montgomeryvilie, P A 18936-1013 »"•«ÿ'WXPow ea-iijjy S U I 527-0 RF & MICROWAVE TRANSISTORS IFF/DME APPLICATIONS « DESIGNATED FDR HIGH POWER PULSE !FF AMD TACAN . 5.0 WATTS (min.IIF F 1030-1090MH2.

Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 SD1527-8 RF & MICROWAVE TRANSISTORS IFF/DME APPLICATIONS • DESIGNATED FOR HIGH POWER PULSE IFF ANDTACAN • 5.0 WATTS (min.) IFF 1030-1090MH!

Contextual Info: MS2552 RF & MICROWAVE TRANSISTORS P RODUCT P REVIEW DESCRIPTION KEY FEATURES The MS2552 device is a high power pulsed transistor specifically designed for DME/TACAN avionics applications. Refractory/Gold Metallization Emitter Ballasted Ruggedized VSWR ∞ :1

Contextual Info: ü J S S j r x m r r \ ’> j ,x j t î l «n t n t m "f 4 0 C o m m e r c e D r iv e M ic ro s e m j SD152o.8 RF & MICROWAVE TRANSISTORS IFF/DME APPLICATIONS « DESIGNED FOR PULSE POW ER IFF, DÍ4E, TACAN * 0 2 b W ATT tvp IFF 1030 1090M M ; « 0.20 WATT (tin .! PME 102Í»-1130MMZ

Contextual Info: MS2552 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES Refractory/Gold Metallization Emitter Ballasted Ruggedized VSWR ∞ :1 Capability Input/Output Matching Overlay Geometry Metal/Ceramic Hermetic Package POUT = 325 W Min.

TACAN 41 RF transistor

Abstract: RF transistors TACAN MICROSEMI RF TRANSISTOR MS2552 MS2575
Contextual Info: MS2552 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES This device is capable of withstanding an infinite load VSWR at any phase angle under full rated conditions. Low RF thermal resistance and semiautomatic bonding techniques ensure high reliability and product

TACAN 41 RF transistor

Abstract: TACAN 41 MSC81325M S042
Contextual Info: MSC81325M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER BALLASTED RUGGEDIZED VSWR ∞:1 INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 325 W MIN. WITH 6.7 dB GAIN

Contextual Info: M 2 fV I$ C § T S & fY I! 140 C o m m e rc e D riv e W fo n tg o m e iy v ilte , PA 1893 6-10 13 Tel: 215) 631-9840 SD1536-8 RF & MiCROWAVE TRANSISTORS IFF/D ME APPLICATIONS DESIGNATED FOR HIGH POWER PULSE IFF, DM!'' TACAN 100 W ATTS (typ.) IFF 1030-1090M Hz

TACAN 41 RF transistor

Contextual Info: MSC81325M NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 X .400 2NLFL DESCRIPTION: 1 The ASI MSC81325M is a Common Base Device Designed for DME and TACAN Pulse Applications. 3 2 FEATURES INCLUDE: • Gold Metalization • Input Matching • Emitter Ballasting

MSC81325M

Abstract: S042
Contextual Info: MSC81325M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER BALLASTED RUGGEDIZED VSWR ∞:1 INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 325 W MIN. WITH 6.7 dB GAIN

AVD002P

Abstract: TACAN ASI10553
Contextual Info: AVD002P NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 4L PILL A The ASI AVD002P is Designed for Class C, DME/TACAN Applications up to 1150 MHz. A .1 0 0 x 4 5 ° FEATURES: C B • Class C Operation • PG = 9.0 dB at 2.0 W/1150 MHz • Omnigold Metalization System

Contextual Info: n = ^ 7 J # . S G S -T H O M S O N M » E L B g T m [ ] f _ S D 1 5 2 8 - 0 8 RF & MICROWAVE TR AN SISTO R S _ A VIO N IC S APPLICATIONS . DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS . 20 WATTS (typ. IFF 1030 - 1090 MHz

Contextual Info: SGS-IHOMSON MSC81325M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER BALLASTED RUGGEDIZED VSWR oo:1 INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P o u t = 325 W MIN. WITH 6.7 dB GAIN

Contextual Info: /=T SGS-THOMSON ^ _ M S C 8 1 3 2 5 M 7 # . RF & MICROWAVE TRANSISTORS _ AVIONICS APPLICATIONS P R E LIM IN AR Y DATA • R EFR AC TO R Y/G O LD M ETALLIZATIO N . EM ITTER BALLASTED ■ RUG G EDIZED VSW R oo:1 . IN PU T/O U TPU T M ATCHING

SO42

Abstract: STM 160-30 "class AB Linear" hf PD55003 equivalent SD57045 linear amplifier 470-860 LT5232 VHF lna 30 to SD4100 SD2932 linear amplifier
Contextual Info: RF Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions RF LDMOS HF to 1000 MHz Class AB Common Source - PowerSO-10RF VHF/UHF Mobile Radio and 900 MHz Cellular Applications P/N PD54003 PD54008 PD55003 PD55008 PD55015 PD55025S PD57002

Contextual Info: 0912GN-600 600 Watts - 65 Volts, 128 s, 10% Broadband Data Link 960 - 1215 MHz Preliminary GENERAL DESCRIPTION CASE OUTLINE 55-KR Common Source The 0912GN-600 is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 18dB gain,

transistor 5cw

Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
Contextual Info: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000

Germanium itt

Abstract: thyratron pl 21 Mallory Vibrator Data Book National Electronics ignitrons bat CR Li Mn lab test result Helipot POTENTIOMETER Bendix Transistors selenium rectifier westinghouse 5000W AUDIO AMPLIFIER 6cl6
Contextual Info: 1q5 OCZ CHICAGO, 5' Three Regional Conventions SHARE THOS Pleose Route COPY! to www.americanradiohistory.com ,titiSCON 1956 the replacement for tubular ceramic and mica capacitors RMC DISCAPS 520 .260 .860 .890 RMC RMC .570 .355 .400 1.290 .760 .790 RMC 470

transistor 7893

Abstract: transistor 9634
Contextual Info: Q ACT-120923 Ultra Low Noise Narrowband Amplifier 950 to 1250 MHz avan tek FEATURES APPLICATIONS • Ultra Low Noise Figure: 1.2 dB Typ • Narrow Frequency Range: 950 to 1250 MHz • Internal Voltage Regulator • Available With High Reliability Screening

combiner THEORY

Abstract: amplifier 400W GaN microwave amplifier 100W 28V GaN amplifier 100W DSASW0033875 transformer matsunaga RFMD HEMT GaN SiC transistor 3,5Ghz, power 100w RF amplifier 400W WP100318
Contextual Info: AN RFMD WHITE PAPER RFMD. ® Wideband 400W Pulsed Power GaN HEMT Amplifiers Matthew J. Poulton, Karthik Krishnamurthy, Jay Martin, Bart Landberg, Rama Vetury, David Aichele RF Micro Devices, Inc. RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, and PowerStar® are trademarks of RFMD, LLC. All other trade names, trademarks and registered trademarks are the property of their respective

MSC1002

Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
Contextual Info: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition

tda8510j 2.1 creative amplifiers

Abstract: transistor SMD wm9 SAA7119 IC TDA8510J EQUIVALENT IC NO. LIST Rf based remote control robot using 8051 SAA7119 philips TDA8947J equivalent BLF268 HEF4000B Family specifications TDA8947J
Contextual Info: Semiconductors Choice. Performance. Flexibility. The Philips Portfolio 360º vision of multimedia Introduction to ��������������� � ������������� ������� ��������������

LPC2148 i2c

Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent
Contextual Info: Building blocks for vibrant media Highlights of the NXP product portfolio Building blocks for vibrant media  At NXP Semiconductors, the new company founded by Philips, we’re driven by a single purpose — to deliver vibrant media technologies that create better sensory experiences.