TAIWAN SEMICONDUCTOR S1M Search Results
TAIWAN SEMICONDUCTOR S1M Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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SCL3400-D01-004 | Murata Manufacturing Co Ltd | 2-axis (XY) digital inclinometer |
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SCC433T-K03-PCB | Murata Manufacturing Co Ltd | 2-Axis Gyro, 3-axis Accelerometer combination sensor on Evaluation Board |
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SCC433T-K03-10 | Murata Manufacturing Co Ltd | 2-Axis Gyro, 3-axis Accelerometer combination sensor |
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SCC433T-K03-004 | Murata Manufacturing Co Ltd | 2-Axis Gyro, 3-axis Accelerometer combination sensor |
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MRUS74SK-001 | Murata Manufacturing Co Ltd | Magnetic Sensor |
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TAIWAN SEMICONDUCTOR S1M Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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ru 94v0Contextual Info: S1AL thru S1ML Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Rectifier - Glass passivated junction chip - Ideal for automated placement - Low-Profile Package - Low power loss, high efficiency - Moisture sensitivity level : level 1, per J-STD-020 |
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J-STD-020 2011/65/EU 2002/96/EC AEC-Q101 JESD22-B102 D1309028 ru 94v0 | |
Contextual Info: S1JLS thru S1MLS Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Rectifiers - Ideal for automated placement - Compact package size - High surge current capability - Low power loss, high efficiency - Moisture sensitivity level: level 1, per J-STD-020 |
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J-STD-020 2011/65/EU 2002/96/EC OD123HE AEC-Q101 JESD22-B102 D1404004 | |
Contextual Info: S1A thru S1M Taiwan Semiconductor CREAT BY ART Surface Mount Rectifiers FEATURES - Glass passivated chip junction - Ideal for automated placement - Low forward voltage drop - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020 |
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J-STD-020 2011/65/EU 2002/96/EC DO-214AC AEC-Q101 JESD22-B102 D1405026 | |
Contextual Info: S1AL thru S1ML Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Rectifier - Glass passivated junction chip - Ideal for automated placement - Low-Profile Package - Low power loss, high efficiency - Moisture sensitivity level : level 1, per J-STD-020 |
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J-STD-020 2011/65/EU 2002/96/EC JESD22-B102 D1309028 | |
Contextual Info: S1AL thru S1ML Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Rectifier - Glass passivated junction chip - Ideal for automated placement - Low-Profile Package - Low power loss, high efficiency - Moisture sensitivity level: level 1, per J-STD-020 |
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J-STD-020 2011/65/EU 2002/96/EC AEC-Q101 JESD22-B102 D1405032 | |
Contextual Info: S1JLS thru S1MLS Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Rectifiers - Ideal for automated placement - Compact package size - High surge current capability - Low power loss, high efficiency - Moisture sensitivity level: level 1, per J-STD-020 |
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J-STD-020 2011/65/EU 2002/96/EC OD123HE JESD22-B102 D1401012 | |
Marking code NG
Abstract: s1jl marking S1DL ml marking S1GL
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OCR Scan |
RS-481 Marking code NG s1jl marking S1DL ml marking S1GL | |
ru 94v0Contextual Info: S1AL thru S1ML Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Rectifier - Glass passivated junction chip - Ideal for automated placement - Low-Profile Package - Low power loss, high efficiency - Moisture sensitivity: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and |
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J-STD-020 2011/65/EU 2002/96/EC AEC-Q101 JESD22-B102 D1309028 ru 94v0 | |
S1MLContextual Info: S1AL thru S1ML Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Rectifier - Glass passivated junction chip - Ideal for automated placement - Low-Profile Package - Low power loss, high efficiency - AEC-Q101 qualified Green compound not involved - Moisture sensitivity level: level 1, per J-STD-020 |
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AEC-Q101 J-STD-020 2011/65/EU 2002/96/EC JESD22-B102 D1309028 S1ML | |
Contextual Info: S1AL thru S1ML Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Rectifier - Glass passivated junction chip - Ideal for automated placement - Low-Profile Package - Low power loss, high efficiency - AEC-Q101 qualified Green compound not involved - Moisture sensitivity level : level 1, per J-STD-020 |
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AEC-Q101 J-STD-020 2011/65/EU 2002/96/EC JESD22-B102 D1309028 | |
S1GL
Abstract: Y MARKING S1DL
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OCR Scan |
E-326243 AEC-Q101 plate-55 S1GL Y MARKING S1DL | |
Contextual Info: s TAIWAN SEMICONDUCTOR S1AL -S 1 M L RoHS 1.0 AMP. Surface Mount Rectifiers COMPLIANCE Sub SMA - CaUioOaBard i\- Features •4* ❖ -v* ^ •v" For surface m ounted application Glass passivated ju nctio n chip. Low -Profile Package Ideal fo r autom ated placem ent |
OCR Scan |
AEC-Q101 | |
S1J taiwan
Abstract: S1A.S1M s1m taiwan semiconductor JESD22-B102D J-STD-002B Taiwan SemiConductor S1M
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OCR Scan |
/DO-214 E-326243 AEC-Q101 J-STD-002B JESD22-B102D. 50Vdc S1J taiwan S1A.S1M s1m taiwan semiconductor JESD22-B102D Taiwan SemiConductor S1M | |
RS431
Abstract: rs1ml subsma marking code PARI
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OCR Scan |
RS-431 125cC RS431 rs1ml subsma marking code PARI | |
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marking code nt
Abstract: S1J taiwan SMA MARKING S1G s1m marking code SMA MARKING S1J SMA MARKING S1M JESD22-B102D J-STD-002B s1m taiwan semiconductor SMA MARKING S1d
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OCR Scan |
SMA/DO-214AC J-STD-020, 50Vdc 10ris/ marking code nt S1J taiwan SMA MARKING S1G s1m marking code SMA MARKING S1J SMA MARKING S1M JESD22-B102D J-STD-002B s1m taiwan semiconductor SMA MARKING S1d | |
Taiwan SemiConductor S1M
Abstract: S1A-T1 MARKING S1J S1m diode S1m Taiwan S1M-T S1A-35 S1M-T3 s1m smb
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SMB/DO-214AA MIL-STD-750, Taiwan SemiConductor S1M S1A-T1 MARKING S1J S1m diode S1m Taiwan S1M-T S1A-35 S1M-T3 s1m smb | |
S1m diodeContextual Info: S1A – S1M WTE POWER SEMICONDUCTORS Pb 1.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE Features Glass Passivated Die Construction Ideally Suited for Automatic Assembly B Low Forward Voltage Drop Surge Overload Rating to 30A Peak Low Power Loss |
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SMB/DO-214AA SMB/DO-214AA, S1m diode | |
S1m diode
Abstract: diode s1m Taiwan SemiConductor S1M diode S1J s1m taiwan semiconductor S1J Diode S1A-35 s1m4
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SMB/DO-214AA SMB/DO-214AA, MIL-STD-750, S1m diode diode s1m Taiwan SemiConductor S1M diode S1J s1m taiwan semiconductor S1J Diode S1A-35 s1m4 | |
Contextual Info: S1A – S1M 1.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE WON-TOP ELECTRONICS Pb Features Glass Passivated Die Construction Ideally Suited for Automatic Assembly Low Forward Voltage Drop Surge Overload Rating to 60A Peak |
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SMB/DO-214AA, MIL-STD-750, | |
S1M DO-214AC
Abstract: "General Semiconductor" DO-214AC JEDEC DO-214AC Taiwan SemiConductor S1M JEDEC DO-214AC DC COMPONENTS 18L3 CBVK741B019 F63TNR F924 FMKA140
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SMA/DO-214AC S1M DO-214AC "General Semiconductor" DO-214AC JEDEC DO-214AC Taiwan SemiConductor S1M JEDEC DO-214AC DC COMPONENTS 18L3 CBVK741B019 F63TNR F924 FMKA140 | |
TEA1705Contextual Info: UM10724 TEA1720B3T and TEA1705 10 W EVD15 demo board Rev. 1 — 5 December 2013 User manual Document information Info Content Keywords TEA1720B3T, TEA1705, ultra-low standby power, constant output voltage, constant output current, primary sensing, integrated high-voltage |
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UM10724 TEA1720B3T TEA1705 EVD15 TEA1720B3T, TEA1705, TEA1705 | |
EG8504
Abstract: L3P09X-25G00 L3P13X l3p09 Q22FA238 l3p13y mother board lcd tv block diagram L3P13Y-25G00 L3P13X-25G00 L3P13X-21G00
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TS002-09 EG8504 L3P09X-25G00 L3P13X l3p09 Q22FA238 l3p13y mother board lcd tv block diagram L3P13Y-25G00 L3P13X-25G00 L3P13X-21G00 | |
P65N06
Abstract: 65N06 similar mosfet of fqp65n06 MOSFET, 3077 30A60CT BT412 AC ENERGY SAVING light CIRCUIT DIAGRAM IRFB3077 FQP65N06 fb3077
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D-81541 P65N06 65N06 similar mosfet of fqp65n06 MOSFET, 3077 30A60CT BT412 AC ENERGY SAVING light CIRCUIT DIAGRAM IRFB3077 FQP65N06 fb3077 | |
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
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GP15M 1N4005 1N4005/Logo DO-204AC 24-Jun-04 DO-204AL GENERAL SEMICONDUCTOR MARKING mJ SMA ED kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A |