TAML Search Results

Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D M O S FET ISSUE 3 - DECEMBER 1995 O_ FEATURES * 200 Volt V DS * ^DS on = P A R T M A R K IN G D E T A I L - M U SOT23 ABSOLUTE M A X IM U M RATINGS. VALUE UNIT V Ds 200 V C ontinuous Drain Current at Tamlj=250C

Contextual Info: FORWARD INTCHNAHONAL ELECTRONICS LTD, BC556 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AF AMPLIFIER Package: TO-92 * Complement To BC546 * High Voltage * Collector-Emitter Voltage : Veeo=-65V ABSOLUTE MAXIMUM RATINGS at Taml»=25*C

Contextual Info: SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE PIN CONFIGURATION 1 l * t PARTMARKING DETAIL FM M V109-4A 1 3 ABSOLUTE MAXfMUM RATINGS. PARAMETER SYMBOL Power Dissipation at Tamlj=25°C Ptot Tj-Tjtg Operating and Storage Temperature Range VALUE UNIT 330 mW

Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 2 - MARCH 94 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BO L VALUE UNIT v CBO -50 V v CEO -45 V V EBO -5 V Peak Pulse Current 'cm -1 A Continuous Collector Current 'c -800 mA Power Dissipation at Tamlj=25°C ^tot

Contextual Info: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - MARCH 94 FEATURES * 100 Volt V,DS R DS on -8£2 ABSOLUTE MAXIMUM RATINGS. SYMBOL Drain-Source Voltage Continuous Drain Current at Tamly=250C Pulsed Drain Current Gate Source Voltage VALUE UNIT < o tn PARAMETER

Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -JUNE 94_ FEATURES * 60 V olt VQS * R DS on = 1 ß REFER TO ZVN4206A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage Vos 60 V •d 600 mA A Continuous Drain Current at Tamlf=25°C

BAT 127

Abstract: A502GE A503GE byv 20 BYV 35 CB-127
Contextual Info: silicon signal diodes O diodes de signal au silicium Type VRRM V |R ! V r max WA) (V) 'F 'O* ImA) schottky diodes BAR BAT BAR BAT THOMSON'CSF vf max (V) / if ImA) C / max (pF) Dynamic parameter« Vr IV) Tamlb = 25°C diodes sch ottky 19 29 35 19 4 5 5 10

Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - MARCH 94_ FEATURES * 350 Volt VDS R OS on = 3 5 i î ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT VDS 350 V b 90 mA 1 A ±20 V 700 mW -55 to +150 °C Drain-Source Voltage Continuous Drain Current at Tamlj=250C

Contextual Info: P-CHANNEL ENHANCEMENT MODE VERTICAL D M O S FET ISSUE 2 - MARCH 94_ FEATURES * 200 Volt VDS * R DS on = 2 5 £ î ABSOLUTE MAXIMUM RATINGS. PARAMETER SY M B O L Continuous Drain Current at Tamlj=25°C VALUE UNIT < o (/> Drain-Source Voltage

smd transistor marking EY

Abstract: SMD TRANSISTOR MARKING 3211 ahr TRANSISTOR smd transistor SMD S33 ahr11 SMD Transistor 1lm SMD TRANSISTOR MARKING 2Nx SMD TRANSISTOR MARKING 2D transistor kc 2026 dw11
Contextual Info: m&s.lTio2/16E U November 1964 WPFR5S7XNG MIL-B-195C+6D 27 Eecember 1*1 MILITASY SPECITICAT20N TRANSISTOR, GVN, SILICON TTPES 2N3.42, 2NX% , A:lD 2N343 i, mandatory for “8. of the DePart.mnt of Defame. by all ‘211h SDOoifiCd.iorJ Awmim 1. tamlt~ md -E 1.1

LS604

Abstract: 74ls604 SN74LS604
Contextual Info: TYPES SN54LS604 THRU SN54LS607, SN74LS604 THRU SN74LS607 OCTAL 2-INPUT MULTIPLEXED LATCHES D 2545, JU L Y 1979 - R E V IS E D D E C E M B E R 1 9 8 3 T IM 9 96 0 4 T H R U T IM 9 9 6 07 Choice of Outputs: Three-State ('LS604, ’ LS606) Open-Collector ('LS605, 'LS607)

ericsson bml 403

Abstract: PBL3764 TRANSISTOR ztx 105 3a OE RSG Series TRANZORB ericsson slic JW216 TRANSISTOR ztx 105 3a circuit diagram
Contextual Info: ERICSSON ^ September 1989 PBL 3764 Subscriber Line Interface Circuit Description Key Features The PBL 3764 Subscriber Line Interface Circuit SLIC is a bipolar integrated circuit in 75 V technology which replaces the conventional transform er based analog line

Contextual Info: HD153011 2-7 RLL ENDEC built-in VFO Description The HD153011 is a 2-7 R L L EN D EC built-in VFO IC developed for magnetic disks. This device decodes a 2-7 R L L signal read from a magnetic disk into an N R Z signal, and encodes an NRZ signal to be written to a magnetic disk into a 2-7

54S474

Abstract: tea 1601 t 54S473 3014 LED 82s141 hf 13005 t1al fuse 13005 TRANSISTOR SEC 13005 transistor 13005 can be replaced with
Contextual Info: 1 MIL-M-38510/208C 31 J a n u a r y 1 9 8 4 iÜKtKbEÜING MIL-M-38510/208B 16 A u g u s t 1 9 8 2 MILITARY SPECIFICATION BIPOLAR, MICROCIRCUITS, DIGITAL, 4096-BIT STHOTTKY P R O G R A M M A B L E R E A D - O N L Y M E M O R Y P RO M , M O N O L I T H I C

dilmon 28

Abstract: transistor DA 218
Contextual Info: be!E D • 37bfi522 DD1770R RflO m P L S B PSLU4I G E C P L E S S E Y GEC PLESSEY SEMICONDS S E M I C O N D U C T O R S DS2349-2.2 ULA DA SERIES ANALOG/DIGITAL MIXED SIGNAL ARRAY FAMILY Supersedes June 1990 Edition The ULA DA Series is a family of 8 arrays developed to

Contextual Info: S i GEC P L E S S E Y S I >1 I t O S I l ( I D ADVANCE INFORMATION l< S SP8854D 1.7GHz PARALLEL LOAD PROFESSIONAL SYNTHESISER The SP8854D is one of a family of parallel load synthesisers containing all the elements apart from the loop amplifier to fabricate a PLL synthesis loop. Other parts In the

Contextual Info: SOT23 NPN SILICON PLANAR M EDIUM POWER HIGH PERFORMANCE TRANSISTOR ISSU E 3 - NOVEMBER 1995 P A R T M A R K IN G D E T A IL - FMMT495 O_ §: 495 ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L VALUE UNIT Collector-Base Voltage

transistor vergleichsliste

Abstract: Transistor Vergleichsliste DDR telefunken transistoren VALVO BSW69 vergleichsliste DDR vergleichsliste transistor BC-148 rft transistoren Transistoren DDR
Contextual Info: TRANSISTOR VERGLEICHSLISTE Teil 2: Siliziumtransistoren r a d io - t e le v is io n Transistorverglèich& liste T eil 2 : S iliziu in tra n sistoren TRA N SISTO R, V ER G LEICH S LIS T E Teil 2: Siliziumtransistoren DER D EU TSCH EN M IL IT Ä R V E R L A G

TAA812

Abstract: RS50
Contextual Info: HIGH GAIN OPERATIONAL AMPLIFIER TAA8I2 T E N T A T IV E D A T A The TAA812 is a g en eral purpose high gain operatio n al a m p lifie r on a m onolithic silico n chip. The device is fully com pensated w ith the addition of a single cap a cito r sta b ilisin g the c irc u it. Used a s a c o m p a rato r the

4742A

Abstract: 4735 zener zener 4733 4732A 4739A 4749A 4731A 1N4187
Contextual Info: o zener diodes diodes zener THOMSON-CSF Types Vzr/IZT* rZT/l2T* nom V max A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A B B B B B B B 3,3 3,6 3,9 4,3 4,7 5,1 5,6 6,2 6,8 7,5 8,2 9,1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39

lm 2902 n

Contextual Info: SGS-THOMSON LM 2902 Id i LOW POWER QUAD OPERATIONAL AMPLIFIER LARGE VOLTAGE GAIN : 100 dB VERY LOW SUPPLY CURRENT/AMPLI 375 |jA LOW INPUT BIAS CURRENT : 20 nA LOW INPUT OFFSET VOLTAGE : 2 mV LOW INPUT OFFSET CURRENT : 2 nA WIDE POWER SUPPLY RANGE : . SINGLE SUPPLY : + 3 V TO + 30 V

TFK 404

Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
Contextual Info: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317

TDA7057AQ

Abstract: 2000 W BTL POWER AMPLIFIER CIRCUIT DIAGRAM TDA7057A TDA7057 DC VOLUME CONTROL MSA716
Contextual Info: Philips Sem iconductors O bjective specification 2 x 5 W stereo BTL audio output amplifier with DC volume control TDA7057AQ FEATURES GENERAL DESCRIPTION • DC volume control The TDA7057AQ is a stereo BTL output amplifier wih DC volume control in a 13-pin medium power package. The

10 35L V6

Abstract: 10 35L DIODE 74ALVC164245 74ALVC164245DGG 74ALVC164245DL diode 10 35L 35L DIODE
Contextual Info: Philips Semiconductors Product Specification 16-Bit dual supply translating transceiver; 3-state 74ALVC164245 FEATURES • QUICK REFERENCE DATA GND = 0 V; Tamb = 25°C; tr = t, < 2.5 ns Wide supply voltage range A port: 1.2 to 3.6 V B port: 1.2 to 5.5 V In accordance with JEDEC