tanaka TS3332LD epoxy
Abstract: tanaka TS3332LD TS3332LD tanaka epoxy remix capacitors Die Attach epoxy stamping tanaka free circuit diagram of rf id Broadband Amplifiers Application Notes, appendix 3 Thermal Epoxy
Text: Epoxy Die Attach Considerations for HPA MMICs 1 Scope MMICs have been traditionally mounted on a RF circuit board, or directly to a plated metal carrier, using a wide range of conductive epoxies, or eutectic solder (e.g. AuGe, AuSn). Eutectic and epoxy has been used in both
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ph44
Abstract: Tanaka GL2 tanaka wire Ablebond 8340 tanaka au wire tanaka epoxy Compound c7025 Ablebond tanaka C7025
Text: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN DATE: November 18, 1999 MEANS OF DISTINGUISHING CHANGED DEVICES: PCN #: G9911-04 Product Affected: All Plastic packages Product Mark Back Mark
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G9911-04
Mil-Std-883,
S-7390)
S-7383
ph44
Tanaka GL2
tanaka wire
Ablebond 8340
tanaka au wire
tanaka epoxy
Compound c7025
Ablebond
tanaka
C7025
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AC-7088
Abstract: tanaka AL wire ELF-4C6 42-10a C850-6 4210a tanaka wire T-1001 C-850-6 hl-011mg
Text: EVERLIGHT ELECTRONICS CO.,LTD. Device Number : DDF-4C6-071 REV: 1.0 Page: 1/6 0.39" Quadruple Digit Displays ELF-4C6-1GWB PART NO. : ECN : █ Features : █ Applications: ● Industrial standard size. ● Audio equipment ● Low power consumption. ● Instrument panels
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DDF-4C6-071
Emitt-4C6-071
T-1001
LT-010OG
HL-011MG
OS-4210A
OS-4210B
AC-7088
C-850-6
25mil
AC-7088
tanaka AL wire
ELF-4C6
42-10a
C850-6
4210a
tanaka wire
T-1001
C-850-6
hl-011mg
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T3007
Abstract: T3007-20 EVERLIGHT LED PART NUMBER LIST tanaka epoxy tanaka tanaka wire bond for LED RH95 epifine
Text: EVERLIGHT ELECTRONICS CO.,LTD. DATA SHEET SHARP PART NO. : PART NO. ： DATE ： DEPARTMENT： RH-PX0105SEZZ 333EC/F45-54 2001/6/19 CHR&D1 . REVISION ： 2 RECEIVED • MASS PRODUCTION □ PRELIMINARY □ CUSTOMER DESIGN DEVICE NUMBER : PAGE : 5 CUSTOMER 2
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RH-PX0105SEZZ
333EC/F45-54
CDLE-033-796
LT-010OG
25mil
T3007-20
T3007
T3007-20
EVERLIGHT LED PART NUMBER LIST
tanaka epoxy
tanaka
tanaka wire bond for LED
RH95
epifine
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TK15430V
Abstract: No abstract text available
Text: TK15430V Electrical Specification 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. Table of Contents Purpose TOKO Part Number Functions Applications Structure Package Outline Absolute Maximum Ratings Electrical Characteristics Test Circuit Block Diagram Pin Assignment
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TK15430V
DB3-L118A
TK15430V
TK15430V.
TK154*
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tanaka TS3332LD epoxy
Abstract: tanaka TS3332LD tanaka epoxy dm6030hk CMM-2-BD-000X CMM-2-BD tanaka gold wire tanaka gold wire data sheet TS3332LD DM6030HK-Pt
Text: 2.0-10.0 GHz GaAs MMIC Amplifier CMM-2-BD August 2007 - Rev 06-Aug-07 CMM-2-BD 2.0 to 10.0 GHz GaAs MMIC Amplifier Mimix CMM-2-BD GaAs MMIC Amplifier 10 Mimix Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
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06-Aug-07
CMM-2-BD-000X
tanaka TS3332LD epoxy
tanaka TS3332LD
tanaka epoxy
dm6030hk
CMM-2-BD-000X
CMM-2-BD
tanaka gold wire
tanaka gold wire data sheet
TS3332LD
DM6030HK-Pt
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tanaka TS3332LD
Abstract: XP1032-BD-EV1 tanaka TS3332LD epoxy DM6030HK XP1032-BD
Text: 32.0-36.0 GHz GaAs MMIC Power Amplifier P1032-BD May 2008 - Rev 12-May-08 Features Chip Device Functional Diagram 2W Power Amplifier Dual Sided Bias Architecture 20 dB Small Signal Gain +32.5 dBm P1dB Compression Point +33.5 dBm Saturated Output Power 100% On-Wafer DC, RF and Output Power Testing
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12-May-08
P1032-BD
MIL-STD-883
parD-000V
XP1032-BD-EV1
XP1032-BD
tanaka TS3332LD
XP1032-BD-EV1
tanaka TS3332LD epoxy
DM6030HK
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tanaka gold wire
Abstract: tanaka TS3332LD epoxy XP1056-BD XP1056-BD-EV1 XP1056-BD-000V tanaka TS3332LD
Text: 34.5-38.0 GHz GaAs MMIC Power Amplifier P1056-BD May 2008 - Rev 12-May-08 Features Chip Device Functional Diagram High Efficiency Power Amplifier >35% PAE 13 dB Small Signal Gain +25.0 dBm P1dB Compression Point +26.0 dBm Saturated Output Power 100% On-Wafer DC, RF and Output Power Testing
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12-May-08
P1056-BD
MIL-STD-883
bD-000V
XP1056-BD-EV1
XP1056-BD
tanaka gold wire
tanaka TS3332LD epoxy
XP1056-BD-EV1
XP1056-BD-000V
tanaka TS3332LD
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XP1054-BD
Abstract: XP1054-BD-000V XP1054-BD-EV1 DM6030HK tanaka TS3332LD
Text: 33.0-36.0 GHz GaAs MMIC Power Amplifier P1054-BD May 2008 - Rev 12-May-08 Features Chip Device Functional Diagram 3W Power Amplifier Dual Sided Bias Architecture 20 dB Small Signal Gain +33.5 dBm P1dB Compression Point +34.5 dBm Saturated Output Power 100% On-Wafer DC, RF and Output Power Testing
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12-May-08
P1054-BD
MIL-STD-883
parD-000V
XP1054-BD-EV1
XP1054-BD
XP1054-BD-000V
XP1054-BD-EV1
DM6030HK
tanaka TS3332LD
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Untitled
Abstract: No abstract text available
Text: 13.5-16.0 GHz GaAs MMIC Power Amplifier P1057-BD May 2008 - Rev 28-May-08 Features Chip Device Functional Diagram 10W Power Amplifier Dual Sided Bias Architecture 17 dB Small Signal Gain +39.0 dBm P1dB Compression Point +41.0 dBm Pulsed Saturated Output Power
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28-May-08
P1057-BD
MIL-STD-883
surfaD-000V
XP1057-BD-EV1
XP1057-BD
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tanaka gold wire
Abstract: tanaka wire XP1057-BD DM6030HK tanaka TS3332LD tanaka TS3332LD epoxy
Text: 13.5-16.0 GHz GaAs MMIC Power Amplifier P1057-BD May 2008 - Rev 12-May-08 Features Chip Device Functional Diagram 10W Power Amplifier Dual Sided Bias Architecture 18 dB Small Signal Gain +39.0 dBm P1dB Compression Point +41.0 dBm Pulsed Saturated Output Power
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12-May-08
P1057-BD
MIL-STD-883
surfaD-000V
XP1057-BD-EV1
XP1057-BD
tanaka gold wire
tanaka wire
DM6030HK
tanaka TS3332LD
tanaka TS3332LD epoxy
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tanaka gold wire
Abstract: tanaka au wire DM6030HK tanaka TS3332LD
Text: 14.5-17.0 GHz GaAs MMIC Power Amplifier P1070-BD October 2008 - Rev 16-Oct-08 Features Chip Device Functional Diagram 10W Power Amplifier Dual Sided Bias Architecture 17 dB Small Signal Gain +39.0 dBm P1dB Compression Point +41.0 dBm Pulsed Saturated Output Power
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16-Oct-08
P1070-BD
MIL-STD-883
chipD-000V
XP1070-BD-EV1
XP1070-BD
tanaka gold wire
tanaka au wire
DM6030HK
tanaka TS3332LD
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tanaka TS3332LD
Abstract: TS3332LD
Text: 13.5-16.0 GHz GaAs MMIC Power Amplifier P1057-BD October 2008 - Rev 16-Oct-08 Features Chip Device Functional Diagram 10W Power Amplifier Dual Sided Bias Architecture 17 dB Small Signal Gain +39.0 dBm P1dB Compression Point +41.0 dBm Pulsed Saturated Output Power
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16-Oct-08
P1057-BD
MIL-STD-883
sD-000V
XP1057-BD-EV1
XP1057-BD
tanaka TS3332LD
TS3332LD
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tanaka TS3332LD
Abstract: tanaka TS3332LD epoxy DM6030HK-Pt tanaka gold wire tanaka aluminum wire DM6030HK TS3332LD
Text: 14.5-17.0 GHz GaAs MMIC Power Amplifier P1070-BD September 2008 - Rev 28-Sep-08 Features Chip Device Functional Diagram 10W Power Amplifier Dual Sided Bias Architecture 17 dB Small Signal Gain +39.0 dBm P1dB Compression Point +41.0 dBm Pulsed Saturated Output Power
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28-Sep-08
P1070-BD
MIL-STD-883
chD-000V
XP1070-BD-EV1
XP1070-BD
tanaka TS3332LD
tanaka TS3332LD epoxy
DM6030HK-Pt
tanaka gold wire
tanaka aluminum wire
DM6030HK
TS3332LD
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tanaka TS3332LD
Abstract: tanaka TS3332LD epoxy XP1059 XP1059-BD-000V DM6030HK-Pt tanaka gold wire TS3332LD XP1059-BD-EV1 tanaka gold wire current tanaka wire
Text: 13.5-15.0 GHz GaAs MMIC Power Amplifier P1059-BD May 2008 - Rev 12-May-08 Features Chip Device Functional Diagram 5W Power Amplifier Dual Sided Bias Architecture 28.0 dB Small Signal Gain +36.0 dBm P1dB Compression Point +37.0 dBm Saturated Output Power +38.0 dBm Pulsed Saturated Output Power
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12-May-08
P1059-BD
MIL-STD-883
passivatiD-000V
XP1059-BD-EV1
XP1059-BD
tanaka TS3332LD
tanaka TS3332LD epoxy
XP1059
XP1059-BD-000V
DM6030HK-Pt
tanaka gold wire
TS3332LD
XP1059-BD-EV1
tanaka gold wire current
tanaka wire
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tanaka wire
Abstract: dm6030hk tanaka epoxy
Text: 14.0-16.0 GHz GaAs MMIC Power Amplifier P1058-BD May 2008 - Rev 12-May-08 Features Chip Device Functional Diagram 5W Power Amplifier Dual Sided Bias Architecture 27.0 dB Small Signal Gain +36.0 dBm P1dB Compression Point +37.0 dBm Saturated Output Power +38.0 dBm Pulsed Saturated Output Power
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12-May-08
P1058-BD
MIL-STD-883
passivatiD-000V
XP1058-BD-EV1
XP1058-BD
tanaka wire
dm6030hk
tanaka epoxy
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XP1071-BD-000V
Abstract: tanaka gold wire ts333 tanaka au wire XP1071 XP1071-BD-EV1 tanaka TS3332LD tanaka TS3332LD epoxy
Text: 14.5-17.0 GHz GaAs MMIC Power Amplifier P1071-BD September 2008 - Rev 28-Sep-08 Features Chip Device Functional Diagram 5W Power Amplifier Dual Sided Bias Architecture 27.0 dB Small Signal Gain +36.0 dBm P1dB Compression Point +37.0 dBm Saturated Output Power
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28-Sep-08
P1071-BD
MIL-STD-883
surfaD-000V
XP1071-BD-EV1
XP1071-BD
XP1071-BD-000V
tanaka gold wire
ts333
tanaka au wire
XP1071
XP1071-BD-EV1
tanaka TS3332LD
tanaka TS3332LD epoxy
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tanaka gold wire 1.0 mil
Abstract: tanaka wire DM6030HK tanaka epoxy CMM-5-BD-000X TS3332LD Mimix Broadband tanaka au wire tanaka material safety tanaka bonding wire
Text: 2.0-6.0 GHz GaAs MMIC Amplifier CMM-5-BD January 2007 - Rev 15-Jan-07 Features Chip Diagram High Gain: 16.5 dB 18 dBm P1dB Small Size: 39x40 mils Directly Cascadable Self-Biased Single Power Supply General Description Mimix Broadband's CMM-5 is a 2 to 6 GHz GaAs MMIC
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15-Jan-07
39x40
CMM-5-BD-000X
tanaka gold wire 1.0 mil
tanaka wire
DM6030HK
tanaka epoxy
CMM-5-BD-000X
TS3332LD
Mimix Broadband
tanaka au wire
tanaka material safety
tanaka bonding wire
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tanaka bonding wire
Abstract: No abstract text available
Text: 2.0-6.0 GHz GaAs MMIC Amplifier CMM-5-BD January 2007 - Rev 15-Jan-07 Features Chip Diagram High Gain: 16.5 dB 18 dBm P1dB Small Size: 39x40 mils Directly Cascadable Self-Biased Single Power Supply General Description Mimix Broadband's CMM-5 is a 2 to 6 GHz GaAs MMIC
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15-Jan-07
39x40
CMM-5-BD-000X
tanaka bonding wire
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0118-B
Abstract: 0118b tanaka gold wire 1.0 mil ts333 tanaka TS3332LD tanaka CSW0118-BD DM6030HK TS3332LD DM6030HK-Pt
Text: 0.5-18 GHz GaAs pHEMT MMIC SPDT Switch CSW0118-BD January 2007 - Rev 22-Jan-07 Features Chip Diagram Broadband Coverage: 0.5 to 18.0 GHz Insertion Loss: 1.8 dB Typ. @ 10 GHz Isolation: 35 dB P1dB: +20 dBm, Typical Current Consumption: 50 µA, Typ. with Control Voltage of -7.0V, 0.0V
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CSW0118-BD
22-Jan-07
CSW0118-BD
0118-B
0118b
tanaka gold wire 1.0 mil
ts333
tanaka TS3332LD
tanaka
DM6030HK
TS3332LD
DM6030HK-Pt
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0118-B
Abstract: 0118B tanaka gold wire 1.0 mil CSW0118-BD DM6030HK TS3332LD tanaka epoxy
Text: 0.5-18 GHz GaAs pHEMT MMIC SPDT Switch CSW0118-BD January 2007 - Rev 22-Jan-07 Features Chip Diagram Broadband Coverage: 0.5 to 18.0 GHz Insertion Loss: 1.8 dB Typ. @ 10 GHz Isolation: 35 dB P1dB: +20 dBm, Typical Current Consumption: 50 µA, Typ. with Control Voltage of -7.0V, 0.0V
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CSW0118-BD
22-Jan-07
CSW0118-BD
0118-B
0118B
tanaka gold wire 1.0 mil
DM6030HK
TS3332LD
tanaka epoxy
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Untitled
Abstract: No abstract text available
Text: 13.5-17.0/27.0-34.0 GHz GaAs MMIC Active Doubler X1007-BD February 2008 - Rev 13-Feb-08 Features Integrated Gain, Doubler and Driver Stages Self-biased Architecture +21.0 dBm Output Saturated Power 40.0 dBc Fundamental Suppression On-Chip ESD Protection 100% On-Wafer RF, DC and Output Power Testing
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13-Feb-08
X1007-BD
MIL-STD-883
XX1007-BD
XX1007-BD-000V
XX1007-BD-EV1
XX1007
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XX1007-BD
Abstract: tanaka TS3332LD DM6030HK TS3332LD XX1007-BD-000V XX1007-BD-EV1 tanaka epoxy
Text: 13.5-17.0/27.0-34.0 GHz GaAs MMIC Active Doubler X1007-BD August 2007 - Rev 29-Aug-07 Features Integrated Gain, Doubler and Driver Stages Self-biased Architecture +21.0 dBm Output Saturated Power 40.0 dBc Fundamental Suppression On-Chip ESD Protection 100% On-Wafer RF, DC and Output Power Testing
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X1007-BD
29-Aug-07
MIL-STD-883
XX1007-BD
XX1007-BD
XX1007-BD-000V
XX1007-BD-EV1
XX1007
tanaka TS3332LD
DM6030HK
TS3332LD
XX1007-BD-000V
XX1007-BD-EV1
tanaka epoxy
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tanaka gold wire current
Abstract: DM6030HK TS3332LD XX1007-BD XX1007-BD-000V XX1007-BD-EV1 tanaka
Text: 13.5-17.0/27.0-34.0 GHz GaAs MMIC Active Doubler X1007-BD January 2009 - Rev 14-Jan-09 Features Integrated Gain, Doubler and Driver Stages Self-biased Architecture +21.0 dBm Output Saturated Power 40.0 dBc Fundamental Suppression On-Chip ESD Protection 100% On-Wafer RF, DC and Output Power Testing
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X1007-BD
14-Jan-09
MIL-STD-883
XX1007-BD
XX1007-BD-000V
XX1007-BD-EV1
XX1007
tanaka gold wire current
DM6030HK
TS3332LD
XX1007-BD-000V
XX1007-BD-EV1
tanaka
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