TANAKA GOLD WIRE 1.0 MIL Search Results

tanaka gold wire 1.0 mil

Abstract: tanaka wire DM6030HK tanaka epoxy CMM-5-BD-000X TS3332LD Mimix Broadband tanaka au wire tanaka material safety tanaka bonding wire
Contextual Info: 2.0-6.0 GHz GaAs MMIC Amplifier CMM-5-BD January 2007 - Rev 15-Jan-07 Features Chip Diagram High Gain: 16.5 dB 18 dBm P1dB Small Size: 39x40 mils Directly Cascadable Self-Biased Single Power Supply General Description Mimix Broadband's CMM-5 is a 2 to 6 GHz GaAs MMIC

tanaka bonding wire

Contextual Info: 2.0-6.0 GHz GaAs MMIC Amplifier CMM-5-BD January 2007 - Rev 15-Jan-07 Features Chip Diagram High Gain: 16.5 dB 18 dBm P1dB Small Size: 39x40 mils Directly Cascadable Self-Biased Single Power Supply General Description Mimix Broadband's CMM-5 is a 2 to 6 GHz GaAs MMIC

XS1001-BD

Abstract: XA1000 XS1001 XS100 XS10-0 S1001-BD
Contextual Info: 2.5-4.0 GHz GaAs MMIC 6-Bit Phase Shifter S1001-BD October 2009 - Rev 27-Oct-09 Features 6-Bit Phase Shifter LVCMOS/TTL Compatible Digital Control LSB = 5.625º 26 dBm Input P1dB Compression Point 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883

tanaka TS3332LD

Abstract: XP1032-BD-EV1 tanaka TS3332LD epoxy DM6030HK XP1032-BD
Contextual Info: 32.0-36.0 GHz GaAs MMIC Power Amplifier P1032-BD May 2008 - Rev 12-May-08 Features Chip Device Functional Diagram 2W Power Amplifier Dual Sided Bias Architecture 20 dB Small Signal Gain +32.5 dBm P1dB Compression Point +33.5 dBm Saturated Output Power 100% On-Wafer DC, RF and Output Power Testing

tanaka gold wire

Abstract: tanaka TS3332LD epoxy XP1056-BD XP1056-BD-EV1 XP1056-BD-000V tanaka TS3332LD
Contextual Info: 34.5-38.0 GHz GaAs MMIC Power Amplifier P1056-BD May 2008 - Rev 12-May-08 Features Chip Device Functional Diagram High Efficiency Power Amplifier >35% PAE 13 dB Small Signal Gain +25.0 dBm P1dB Compression Point +26.0 dBm Saturated Output Power 100% On-Wafer DC, RF and Output Power Testing

XP1054-BD

Abstract: XP1054-BD-000V XP1054-BD-EV1 DM6030HK tanaka TS3332LD
Contextual Info: 33.0-36.0 GHz GaAs MMIC Power Amplifier P1054-BD May 2008 - Rev 12-May-08 Features Chip Device Functional Diagram 3W Power Amplifier Dual Sided Bias Architecture 20 dB Small Signal Gain +33.5 dBm P1dB Compression Point +34.5 dBm Saturated Output Power 100% On-Wafer DC, RF and Output Power Testing

XP1055-BD

Abstract: tanaka TS3332LD epoxy
Contextual Info: 34.0-36.0 GHz GaAs MMIC Power Amplifier P1055-BD May 2008 - Rev 12-May-08 Features Chip Device Functional Diagram 2W Power Amplifier Dual Sided Bias Architecture 20 dB Small Signal Gain +32.5 dBm P1dB Compression Point +33.5 dBm Saturated Output Power 100% On-Wafer DC, RF and Output Power Testing

BD 140 transistor

Abstract: tanaka epoxy tanaka TS3332LD tanaka TS3332LD epoxy CMM1110-BD CMM1110-BD-000V DM6030HK M420 TS3332LD
Contextual Info: 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier CMM1110-BD May 2007 - Rev 01-May-07 Features Self Bias Architecture 15.0 dB Small Signal Gain 3.2 dB Noise Figure +13.0 dBm P1dB Compression Point 100% Visual Inspection to MIL-STD-883 Method 2010 Chip Device Layout

PB-CMM1100-BD-0000

Abstract: tanaka epoxy tanaka TS3332LD epoxy transistor BD 140 CMM1100-BD CMM1100-BD-000V DM6030HK TS3332LD
Contextual Info: 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier CMM1100-BD September 2008 - Rev 28-Sep-08 Features Self Bias Architecture 16.0 dB Small Signal Gain 3.8 dB Noise Figure +15.0 dBm P1dB Compression Point 100% Commercial-Level Visual Inspection Using Mil-Std-883 Method 2010

CMM1110-BD

Abstract: CMM1110-BD-000V DM6030HK M420 TS3332LD
Contextual Info: 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier CMM1110-BD May 2007 - Rev 01-May-07 Features Self Bias Architecture 15.0 dB Small Signal Gain 3.2 dB Noise Figure +13.0 dBm P1dB Compression Point 100% Visual Inspection to MIL-STD-883 Method 2010 Chip Device Layout

PB-CMM1100-BD-0000

Abstract: TS3332LD CMM1100-BD CMM1100-BD-000V DM6030HK
Contextual Info: 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier CMM1100-BD April 2007 - Rev 30-Apr-07 Features Self Bias Architecture 16.0 dB Small Signal Gain 3.8 dB Noise Figure +15.0 dBm P1dB Compression Point 100% Visual Inspection to MIL-STD-883 Method 2010 Chip Device Layout

Contextual Info: 13.5-16.0 GHz GaAs MMIC Power Amplifier P1057-BD May 2008 - Rev 28-May-08 Features Chip Device Functional Diagram 10W Power Amplifier Dual Sided Bias Architecture 17 dB Small Signal Gain +39.0 dBm P1dB Compression Point +41.0 dBm Pulsed Saturated Output Power

tanaka gold wire

Abstract: tanaka wire XP1057-BD DM6030HK tanaka TS3332LD tanaka TS3332LD epoxy
Contextual Info: 13.5-16.0 GHz GaAs MMIC Power Amplifier P1057-BD May 2008 - Rev 12-May-08 Features Chip Device Functional Diagram 10W Power Amplifier Dual Sided Bias Architecture 18 dB Small Signal Gain +39.0 dBm P1dB Compression Point +41.0 dBm Pulsed Saturated Output Power

tanaka gold wire

Abstract: tanaka au wire DM6030HK tanaka TS3332LD
Contextual Info: 14.5-17.0 GHz GaAs MMIC Power Amplifier P1070-BD October 2008 - Rev 16-Oct-08 Features Chip Device Functional Diagram 10W Power Amplifier Dual Sided Bias Architecture 17 dB Small Signal Gain +39.0 dBm P1dB Compression Point +41.0 dBm Pulsed Saturated Output Power

tanaka TS3332LD

Abstract: tanaka TS3332LD epoxy DM6030HK-Pt tanaka gold wire tanaka aluminum wire DM6030HK TS3332LD
Contextual Info: 14.5-17.0 GHz GaAs MMIC Power Amplifier P1070-BD September 2008 - Rev 28-Sep-08 Features Chip Device Functional Diagram 10W Power Amplifier Dual Sided Bias Architecture 17 dB Small Signal Gain +39.0 dBm P1dB Compression Point +41.0 dBm Pulsed Saturated Output Power

CMM1100

Abstract: CMM1100-BD PB-CMM1100-BD TS3332LD
Contextual Info: 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier CMM1100 May 2006 - Rev 01-May-06 Features Self Bias Architecture 18.0 dB Small Signal Gain 3.5 dB Noise Figure +11.0 dBm P1dB Compression Point 100% Visual Inspection to MIL-STD-883 Method 2010 Chip Device Layout

Contextual Info: 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier CMM1100-BD July 2006 - Rev 06-Jul-06 Features Self Bias Architecture 18.0 dB Small Signal Gain 3.5 dB Noise Figure +16.0 dBm P1dB Compression Point 100% Visual Inspection to MIL-STD-883 Method 2010 Chip Device Layout

tanaka TS3332LD

Abstract: tanaka TS3332LD epoxy XP1059 XP1059-BD-000V DM6030HK-Pt tanaka gold wire TS3332LD XP1059-BD-EV1 tanaka gold wire current tanaka wire
Contextual Info: 13.5-15.0 GHz GaAs MMIC Power Amplifier P1059-BD May 2008 - Rev 12-May-08 Features Chip Device Functional Diagram 5W Power Amplifier Dual Sided Bias Architecture 28.0 dB Small Signal Gain +36.0 dBm P1dB Compression Point +37.0 dBm Saturated Output Power +38.0 dBm Pulsed Saturated Output Power

tanaka wire

Abstract: dm6030hk tanaka epoxy
Contextual Info: 14.0-16.0 GHz GaAs MMIC Power Amplifier P1058-BD May 2008 - Rev 12-May-08 Features Chip Device Functional Diagram 5W Power Amplifier Dual Sided Bias Architecture 27.0 dB Small Signal Gain +36.0 dBm P1dB Compression Point +37.0 dBm Saturated Output Power +38.0 dBm Pulsed Saturated Output Power

Contextual Info: 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier CMM1100-BD February 2007 - Rev 06-Feb-07 Features Self Bias Architecture 18.0 dB Small Signal Gain 3.5 dB Noise Figure +16.0 dBm P1dB Compression Point 100% Visual Inspection to MIL-STD-883 Method 2010 Chip Device Layout

XP1071-BD-000V

Abstract: tanaka gold wire ts333 tanaka au wire XP1071 XP1071-BD-EV1 tanaka TS3332LD tanaka TS3332LD epoxy
Contextual Info: 14.5-17.0 GHz GaAs MMIC Power Amplifier P1071-BD September 2008 - Rev 28-Sep-08 Features Chip Device Functional Diagram 5W Power Amplifier Dual Sided Bias Architecture 27.0 dB Small Signal Gain +36.0 dBm P1dB Compression Point +37.0 dBm Saturated Output Power

OC 74 germanium transistor

Abstract: P1020 15MPA0566 DM6030HK TS3332LD XP1020-BD XP1020-BD-000V power transistor gaas
Contextual Info: 11.0-19.0 GHz GaAs MMIC Power Amplifier P1020-BD January 2007 - Rev 30-Jan-07 Features Compact, Low Cost Design 20.0 dB Small Signal Gain +27.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010

Contextual Info: 24.0-34.0 GHz GaAs MMIC Power Amplifier 28MPA0304 May 2005 - Rev 05-May-05 Features Chip Device Layout tio n Excellent Saturated Output Stage 16.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

28MPA0304

Abstract: DM6030HK TS3332LD XP1023-BD XP1023-BD-000V XP1023-BD-EV1 P1023-BD p1023b 1000-2200pF mimix power amplifier
Contextual Info: 24.0-34.0 GHz GaAs MMIC Power Amplifier P1023-BD April 2007 - Rev 17-Apr-07 Features Excellent Saturated Output Stage 16.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883