TANAKA TS3332LD Search Results

tanaka TS3332LD epoxy

Abstract: tanaka TS3332LD TS3332LD tanaka epoxy remix capacitors Die Attach epoxy stamping tanaka free circuit diagram of rf id Broadband Amplifiers Application Notes, appendix 3 Thermal Epoxy
Contextual Info: Epoxy Die Attach Considerations for HPA MMICs 1 Scope MMICs have been traditionally mounted on a RF circuit board, or directly to a plated metal carrier, using a wide range of conductive epoxies, or eutectic solder (e.g. AuGe, AuSn). Eutectic and epoxy has been used in both

tanaka TS3332LD epoxy

Abstract: tanaka TS3332LD tanaka epoxy dm6030hk CMM-2-BD-000X CMM-2-BD tanaka gold wire tanaka gold wire data sheet TS3332LD DM6030HK-Pt
Contextual Info: 2.0-10.0 GHz GaAs MMIC Amplifier CMM-2-BD August 2007 - Rev 06-Aug-07 CMM-2-BD 2.0 to 10.0 GHz GaAs MMIC Amplifier Mimix CMM-2-BD GaAs MMIC Amplifier 10 Mimix Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

tanaka TS3332LD

Abstract: XP1032-BD-EV1 tanaka TS3332LD epoxy DM6030HK XP1032-BD
Contextual Info: 32.0-36.0 GHz GaAs MMIC Power Amplifier P1032-BD May 2008 - Rev 12-May-08 Features Chip Device Functional Diagram 2W Power Amplifier Dual Sided Bias Architecture 20 dB Small Signal Gain +32.5 dBm P1dB Compression Point +33.5 dBm Saturated Output Power 100% On-Wafer DC, RF and Output Power Testing

tanaka gold wire

Abstract: tanaka TS3332LD epoxy XP1056-BD XP1056-BD-EV1 XP1056-BD-000V tanaka TS3332LD
Contextual Info: 34.5-38.0 GHz GaAs MMIC Power Amplifier P1056-BD May 2008 - Rev 12-May-08 Features Chip Device Functional Diagram High Efficiency Power Amplifier >35% PAE 13 dB Small Signal Gain +25.0 dBm P1dB Compression Point +26.0 dBm Saturated Output Power 100% On-Wafer DC, RF and Output Power Testing

XP1054-BD

Abstract: XP1054-BD-000V XP1054-BD-EV1 DM6030HK tanaka TS3332LD
Contextual Info: 33.0-36.0 GHz GaAs MMIC Power Amplifier P1054-BD May 2008 - Rev 12-May-08 Features Chip Device Functional Diagram 3W Power Amplifier Dual Sided Bias Architecture 20 dB Small Signal Gain +33.5 dBm P1dB Compression Point +34.5 dBm Saturated Output Power 100% On-Wafer DC, RF and Output Power Testing

Contextual Info: 13.5-16.0 GHz GaAs MMIC Power Amplifier P1057-BD May 2008 - Rev 28-May-08 Features Chip Device Functional Diagram 10W Power Amplifier Dual Sided Bias Architecture 17 dB Small Signal Gain +39.0 dBm P1dB Compression Point +41.0 dBm Pulsed Saturated Output Power

tanaka gold wire

Abstract: tanaka wire XP1057-BD DM6030HK tanaka TS3332LD tanaka TS3332LD epoxy
Contextual Info: 13.5-16.0 GHz GaAs MMIC Power Amplifier P1057-BD May 2008 - Rev 12-May-08 Features Chip Device Functional Diagram 10W Power Amplifier Dual Sided Bias Architecture 18 dB Small Signal Gain +39.0 dBm P1dB Compression Point +41.0 dBm Pulsed Saturated Output Power

tanaka gold wire

Abstract: tanaka au wire DM6030HK tanaka TS3332LD
Contextual Info: 14.5-17.0 GHz GaAs MMIC Power Amplifier P1070-BD October 2008 - Rev 16-Oct-08 Features Chip Device Functional Diagram 10W Power Amplifier Dual Sided Bias Architecture 17 dB Small Signal Gain +39.0 dBm P1dB Compression Point +41.0 dBm Pulsed Saturated Output Power

tanaka TS3332LD

Abstract: TS3332LD
Contextual Info: 13.5-16.0 GHz GaAs MMIC Power Amplifier P1057-BD October 2008 - Rev 16-Oct-08 Features Chip Device Functional Diagram 10W Power Amplifier Dual Sided Bias Architecture 17 dB Small Signal Gain +39.0 dBm P1dB Compression Point +41.0 dBm Pulsed Saturated Output Power

tanaka TS3332LD

Abstract: tanaka TS3332LD epoxy DM6030HK-Pt tanaka gold wire tanaka aluminum wire DM6030HK TS3332LD
Contextual Info: 14.5-17.0 GHz GaAs MMIC Power Amplifier P1070-BD September 2008 - Rev 28-Sep-08 Features Chip Device Functional Diagram 10W Power Amplifier Dual Sided Bias Architecture 17 dB Small Signal Gain +39.0 dBm P1dB Compression Point +41.0 dBm Pulsed Saturated Output Power

XP1055-BD

Abstract: tanaka TS3332LD epoxy
Contextual Info: 34.0-36.0 GHz GaAs MMIC Power Amplifier P1055-BD May 2008 - Rev 12-May-08 Features Chip Device Functional Diagram 2W Power Amplifier Dual Sided Bias Architecture 20 dB Small Signal Gain +32.5 dBm P1dB Compression Point +33.5 dBm Saturated Output Power 100% On-Wafer DC, RF and Output Power Testing

tanaka TS3332LD

Abstract: tanaka TS3332LD epoxy XP1059 XP1059-BD-000V DM6030HK-Pt tanaka gold wire TS3332LD XP1059-BD-EV1 tanaka gold wire current tanaka wire
Contextual Info: 13.5-15.0 GHz GaAs MMIC Power Amplifier P1059-BD May 2008 - Rev 12-May-08 Features Chip Device Functional Diagram 5W Power Amplifier Dual Sided Bias Architecture 28.0 dB Small Signal Gain +36.0 dBm P1dB Compression Point +37.0 dBm Saturated Output Power +38.0 dBm Pulsed Saturated Output Power

tanaka wire

Abstract: dm6030hk tanaka epoxy
Contextual Info: 14.0-16.0 GHz GaAs MMIC Power Amplifier P1058-BD May 2008 - Rev 12-May-08 Features Chip Device Functional Diagram 5W Power Amplifier Dual Sided Bias Architecture 27.0 dB Small Signal Gain +36.0 dBm P1dB Compression Point +37.0 dBm Saturated Output Power +38.0 dBm Pulsed Saturated Output Power

XP1071-BD-000V

Abstract: tanaka gold wire ts333 tanaka au wire XP1071 XP1071-BD-EV1 tanaka TS3332LD tanaka TS3332LD epoxy
Contextual Info: 14.5-17.0 GHz GaAs MMIC Power Amplifier P1071-BD September 2008 - Rev 28-Sep-08 Features Chip Device Functional Diagram 5W Power Amplifier Dual Sided Bias Architecture 27.0 dB Small Signal Gain +36.0 dBm P1dB Compression Point +37.0 dBm Saturated Output Power

tanaka bonding wire

Contextual Info: 2.0-6.0 GHz GaAs MMIC Amplifier CMM-5-BD January 2007 - Rev 15-Jan-07 Features Chip Diagram High Gain: 16.5 dB 18 dBm P1dB Small Size: 39x40 mils Directly Cascadable Self-Biased Single Power Supply General Description Mimix Broadband's CMM-5 is a 2 to 6 GHz GaAs MMIC

0118-B

Abstract: 0118b tanaka gold wire 1.0 mil ts333 tanaka TS3332LD tanaka CSW0118-BD DM6030HK TS3332LD DM6030HK-Pt
Contextual Info: 0.5-18 GHz GaAs pHEMT MMIC SPDT Switch CSW0118-BD January 2007 - Rev 22-Jan-07 Features Chip Diagram Broadband Coverage: 0.5 to 18.0 GHz Insertion Loss: 1.8 dB Typ. @ 10 GHz Isolation: 35 dB P1dB: +20 dBm, Typical Current Consumption: 50 µA, Typ. with Control Voltage of -7.0V, 0.0V

0118-B

Abstract: 0118B tanaka gold wire 1.0 mil CSW0118-BD DM6030HK TS3332LD tanaka epoxy
Contextual Info: 0.5-18 GHz GaAs pHEMT MMIC SPDT Switch CSW0118-BD January 2007 - Rev 22-Jan-07 Features Chip Diagram Broadband Coverage: 0.5 to 18.0 GHz Insertion Loss: 1.8 dB Typ. @ 10 GHz Isolation: 35 dB P1dB: +20 dBm, Typical Current Consumption: 50 µA, Typ. with Control Voltage of -7.0V, 0.0V

Contextual Info: 13.5-17.0/27.0-34.0 GHz GaAs MMIC Active Doubler X1007-BD February 2008 - Rev 13-Feb-08 Features Integrated Gain, Doubler and Driver Stages Self-biased Architecture +21.0 dBm Output Saturated Power 40.0 dBc Fundamental Suppression On-Chip ESD Protection 100% On-Wafer RF, DC and Output Power Testing

XX1007-BD

Abstract: tanaka TS3332LD DM6030HK TS3332LD XX1007-BD-000V XX1007-BD-EV1 tanaka epoxy
Contextual Info: 13.5-17.0/27.0-34.0 GHz GaAs MMIC Active Doubler X1007-BD August 2007 - Rev 29-Aug-07 Features Integrated Gain, Doubler and Driver Stages Self-biased Architecture +21.0 dBm Output Saturated Power 40.0 dBc Fundamental Suppression On-Chip ESD Protection 100% On-Wafer RF, DC and Output Power Testing

tanaka gold wire current

Abstract: DM6030HK TS3332LD XX1007-BD XX1007-BD-000V XX1007-BD-EV1 tanaka
Contextual Info: 13.5-17.0/27.0-34.0 GHz GaAs MMIC Active Doubler X1007-BD January 2009 - Rev 14-Jan-09 Features Integrated Gain, Doubler and Driver Stages Self-biased Architecture +21.0 dBm Output Saturated Power 40.0 dBc Fundamental Suppression On-Chip ESD Protection 100% On-Wafer RF, DC and Output Power Testing

tanaka TS3332LD epoxy

Abstract: DM6030HK TS3332LD XX1007-BD XX1007-BD-000V XX1007-BD-EV1 tanaka bonding wire tanaka
Contextual Info: 13.5-17.0/27.0-34.0 GHz GaAs MMIC Active Doubler X1007-BD February 2008 - Rev 13-Feb-08 Features Integrated Gain, Doubler and Driver Stages Self-biased Architecture +21.0 dBm Output Saturated Power 40.0 dBc Fundamental Suppression On-Chip ESD Protection 100% On-Wafer RF, DC and Output Power Testing

tanaka TS3332LD epoxy

Abstract: XP1073-BD P1073-BD ka-band bare
Contextual Info: 33-37 GHz GaAs MMIC Power Amplifier P1073-BD July 2008 - Rev 14-Jul-08 Features Ka-Band 6.5 W Power Amplifier 22 dB Small Signal Gain 37 - 38 dBm Pulsed Saturated Output Power Up to 24% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing

XP1072-BD

Abstract: ka-band bare xp1072-bd-000v P1072-BD XP1072
Contextual Info: 33-37 GHz GaAs MMIC Power Amplifier P1072-BD July 2008 - Rev 14-Jul-08 Features Ka-Band 4 W Power Amplifier 22 dB Small Signal Gain 35 - 36 dBm Pulsed Saturated Output Power 25% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

ts333

Abstract: tanaka gold wire current tanaka gold wire DM6030HK 8SDV0500 TS3332LD XE1000-BD XE1000-BD-000V XE1000-BD-EV1 DM6030HK-Pt
Contextual Info: 2.0-16.0 GHz GaAs MMIC Frequency Divider April 2007 - Rev 17-Apr-07 E1000-BD Features Divide-by-Four +5.0 dBm Output Power -30 dBc Fundamental Leakage Single-ended or Differential Input & Output 100% On-Wafer, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883