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    TBA 1404 Search Results

    TBA 1404 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ADG1404YCPZ-REEL Analog Devices +/-15V 4:1 Mux with Ron max = Visit Analog Devices Buy
    ADG1404YRUZ-REEL7 Analog Devices 12-15V 4:1 Mux with Ron max = Visit Analog Devices Buy
    LTC1404CS8#PBF Analog Devices Complete SO-8, 12-B, 600ksps A Visit Analog Devices Buy
    LTC1404CS8#TRPBF Analog Devices Complete SO-8, 12-B, 600ksps A Visit Analog Devices Buy
    ADG1404YCPZ-REEL7 Analog Devices +/-15V 4:1 Mux with Ron max = Visit Analog Devices Buy

    TBA 1404 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BGA-48-0608

    Abstract: BS616LV2023 BS616LV2023AC BS616LV2023AI BS616LV2023DC BS616LV2023DI
    Text: BSI Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable BS616LV2023 „ DESCRIPTION „ FEATURES • Very low operation voltage : 2.4 ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 20mA Max. operating current I-grade: 25mA (Max.) operating current


    Original     		PDF BS616LV2023 100ns x8/x16 BS616LV2023 -40oC R0201-BS616LV2023 BGA-48-0608 BS616LV2023AC BS616LV2023AI BS616LV2023DC BS616LV2023DI

    BS616LV4010

    Abstract: BS616LV4010AC BS616LV4010AI BS616LV4010BC BS616LV4010BI BS616LV4010DC BS616LV4010DI BS616LV4010EC BS616LV4010EI TSOP2-44
    Text: BSI Very Low Power/Voltage CMOS SRAM 256K X 16 bit BS616LV4010 „ DESCRIPTION „ FEATURES • Very low operation voltage : 2.7 ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 20mA Max. operating current I -grade: 25mA (Max.) operating current


    Original     		PDF BS616LV4010 100ns x8/x16 BS616LV4010 R0201-BS616LV4010 BS616LV4010AC BS616LV4010AI BS616LV4010BC BS616LV4010BI BS616LV4010DC BS616LV4010DI BS616LV4010EC BS616LV4010EI TSOP2-44

    Untitled

    Abstract: No abstract text available
    Text: BSI Very Low Power/Voltage CMOS SRAM 256K X 16 bit BS616LV4010 „ DESCRIPTION „ FEATURES • Very low operation voltage : 2.7 ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 20mA Max. operating current I -grade: 25mA (Max.) operating current


    Original     		PDF BS616LV4010 100ns x8/x16 BS616LV4010 R0201-BS616LV4010

    BGA-48-0608

    Abstract: BS616LV2012 BS616LV2012AC BS616LV2012AI BS616LV2012DC BS616LV2012DI BS616LV2012TC BS616LV2012TI TSOP1-48
    Text: BSI Very Low Power/Voltage CMOS SRAM 128K X 16 bit BS616LV2012 „ DESCRIPTION „ FEATURES • Very low operation voltage : 2.7 ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 30mA Max. operating current I -grade: 35mA (Max.) operating current


    Original     		PDF BS616LV2012 100ns x8/x16 BS616LV2012 TSOP1-48PIN 48TSOP -12x18mm R0201-BS616LV2012 BGA-48-0608 BS616LV2012AC BS616LV2012AI BS616LV2012DC BS616LV2012DI BS616LV2012TC BS616LV2012TI TSOP1-48

    BS616LV4011

    Abstract: BS616LV4011AC BS616LV4011AI BS616LV4011BC BS616LV4011BI BS616LV4011DC BS616LV4011DI BS616LV4011EC BS616LV4011EI TSOP2-44
    Text: BSI Very Low Power/Voltage CMOS SRAM 256K X 16 bit BS616LV4011 „ FEATURES „ DESCRIPTION • Very low operation voltage : 2.4 ~ 5.5V • Very low power consumption : Vcc = 3.0V C-grade: 20mA Max. operating current I-grade: 25mA (Max.) operating current


    Original     		PDF BS616LV4011 100ns R0201-BS616LV4011 BS616LV4011 BS616LV4011AC BS616LV4011AI BS616LV4011BC BS616LV4011BI BS616LV4011DC BS616LV4011DI BS616LV4011EC BS616LV4011EI TSOP2-44

    100PF

    Abstract: BS616LV8012 BS616LV8012BC BS616LV8012BI
    Text: BSI Very Low Power/Voltage CMOS SRAM 512K X 16 bit „ FEATURES BS616LV8012 „ DESCRIPTION • Very low operation voltage : 2.4~5.5V • Very low power consumption : Vcc = 3.0V C-grade: 20mA Max. operating current I-grade : 25mA (Max.) operating current 0.5uA (Typ.) CMOS standby current


    Original     		PDF BS616LV8012 100ns x8/x16 R0201-BS616LV8012 100uA. 100PF BS616LV8012 BS616LV8012BC BS616LV8012BI

    BGA-48-0608

    Abstract: BS616LV2021 BS616LV2021AC BS616LV2021AI BS616LV2021DC BS616LV2021DI
    Text: BSI Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable BS616LV2021 „ FEATURES „ DESCRIPTION • Very low operation voltage : 2.4 ~ 5.5V • Very low power consumption : Vcc = 3.0V C-grade: 20mA Max. operating current I-grade: 25mA (Max.) operating current


    Original     		PDF BS616LV2021 BS616LV2021 R0201-BS616LV2021 100ns -40oC BGA-48-0608 BS616LV2021AC BS616LV2021AI BS616LV2021DC BS616LV2021DI

    BS616LV4011

    Abstract: BS616LV4011BC BS616LV4011BI BS616LV4011DC BS616LV4011DI BS616LV4011EC BS616LV4011EI TSOP2-44
    Text: BSI Very Low Power/Voltage CMOS SRAM 256K X 16 bit BS616LV4011 „ FEATURES „ DESCRIPTION • Very low operation voltage : 2.4 ~ 5.5V • Very low power consumption : Vcc = 3.0V C-grade: 20mA Max. operating current I-grade: 25mA (Max.) operating current


    Original     		PDF BS616LV4011 100ns -40oC 8x10mm) TSOP2-44 R0201-BS616LV4011 BS616LV4011 BS616LV4011BC BS616LV4011BI BS616LV4011DC BS616LV4011DI BS616LV4011EC BS616LV4011EI TSOP2-44

    TBA 1404

    Abstract: BGA-48-0608 BS616LV2023 BS616LV2023AC BS616LV2023AI BS616LV2023DC BS616LV2023DI
    Text: BSI Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable BS616LV2023 „ FEATURES „ DESCRIPTION • Very low operation voltage : 2.4 ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 20mA Max. operating current I-grade: 25mA (Max.) operating current


    Original     		PDF BS616LV2023 100ns x8/x16 BS616LV2023 R0201-BS616LV2023 -40oC TBA 1404 BGA-48-0608 BS616LV2023AC BS616LV2023AI BS616LV2023DC BS616LV2023DI

    BGA-48-0608

    Abstract: BS616LV4020 BS616LV4020AC BS616LV4020AI BS616LV4020BC BS616LV4020BI BS616LV4020DC BS616LV4020DI
    Text: Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable BSI BS616LV4020 „ FEATURES „ DESCRIPTION • Very low operation voltage : 2.7 ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 20mA Max. operating current I-grade : 25mA (Max.) operating current


    Original     		PDF BS616LV4020 100ns x8/x16 BS616LV4020 R0201-BS616LV4020 BGA-48-0608 BS616LV4020AC BS616LV4020AI BS616LV4020BC BS616LV4020BI BS616LV4020DC BS616LV4020DI

    BS616LV4010

    Abstract: BS616LV4010AC BS616LV4010AI BS616LV4010BC BS616LV4010BI BS616LV4010DC BS616LV4010DI BS616LV4010EC BS616LV4010EI TSOP2-44
    Text: BSI Very Low Power/Voltage CMOS SRAM 256K X 16 bit BS616LV4010 „ DESCRIPTION „ FEATURES • Very low operation voltage : 2.7 ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 20mA Max. operating current I -grade: 25mA (Max.) operating current


    Original     		PDF BS616LV4010 100ns x8/x16 BS616LV4010 R0201-BS616LV4010 BS616LV4010AC BS616LV4010AI BS616LV4010BC BS616LV4010BI BS616LV4010DC BS616LV4010DI BS616LV4010EC BS616LV4010EI TSOP2-44

    BS616LV4021

    Abstract: BS616LV4021BC BS616LV4021BI BS616LV4021DC BS616LV4021DI
    Text: BSI Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable BS616LV4021 „ FEATURES „ DESCRIPTION • Very low operation voltage : 2.4 ~ 5.5V • Very low power consumption : Vcc = 3.0V C-grade: 20mA Max. operating current I-grade : 25mA (Max.) operating current


    Original     		PDF BS616LV4021 100ns R0201-BS616LV4021 -40oC 8x10mm) BS616LV4021 BS616LV4021BC BS616LV4021BI BS616LV4021DC BS616LV4021DI

    BS616LV8021

    Abstract: BS616LV8021AC BS616LV8021AI 100PF BGA-48-0608
    Text: BSI Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable BS616LV8021 „ DESCRIPTION „ FEATURES The BS616LV8021 is a high performance, very low power CMOS Static Random Access Memory organized as 524,288 words by 16 bits or 1,048,576 bytes by 8 bits selectable by CIO pin and operates from


    Original     		PDF BS616LV8021 BS616LV8021 70/100ns au6LV8021 100ns -40oC R0201-BS616LV8021 BS616LV8021AC BS616LV8021AI 100PF BGA-48-0608

    100PF

    Abstract: BS616LV8022 BS616LV8022BC BS616LV8022BI
    Text: BSI Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable „ FEATURES BS616LV8022 „ DESCRIPTION • Very low operation voltage : 2.4 ~ 5.5V • Very low power consumption : Vcc = 3.0V C-grade: 20mA Max. operating current I-grade : 25mA (Max.) operating current


    Original     		PDF BS616LV8022 100ns R0201-BS616LV8022 100uA. 100PF BS616LV8022 BS616LV8022BC BS616LV8022BI

    BS616LV4021

    Abstract: BS616LV4021BC BS616LV4021BI BS616LV4021DC BS616LV4021DI
    Text: BSI Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable BS616LV4021 „ DESCRIPTION „ FEATURES • Very low operation voltage : 2.4 ~ 5.5V • Very low power consumption : Vcc = 3.0V C-grade: 20mA Max. operating current I-grade : 25mA (Max.) operating current


    Original     		PDF BS616LV4021 100ns R0201-BS616LV4021 BS616LV4021 BS616LV4021BC BS616LV4021BI BS616LV4021DC BS616LV4021DI

    BGA-48-0608

    Abstract: BS616LV4020 BS616LV4020AC BS616LV4020AI BS616LV4020BC BS616LV4020BI BS616LV4020DC BS616LV4020DI
    Text: BSI Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable BS616LV4020 „ FEATURES „ DESCRIPTION • Very low operation voltage : 2.7 ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 20mA Max. operating current I-grade : 25mA (Max.) operating current


    Original     		PDF BS616LV4020 100ns x8/x16 BS616LV4020 R0201-BS616LV4020 BGA-48-0608 BS616LV4020AC BS616LV4020AI BS616LV4020BC BS616LV4020BI BS616LV4020DC BS616LV4020DI

    TBA 1404

    Abstract: BGA-48-0608 BS616LV2021 BS616LV2021AC BS616LV2021AI BS616LV2021DC BS616LV2021DI
    Text: BSI Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable BS616LV2021 „ DESCRIPTION „ FEATURES The BS616LV2021 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits or 262,144 bytes by 8 bits selectable by CIO pin and operates from a wide


    Original     		PDF BS616LV2021 BS616LV2021 70/100ns R0201-BS616LV2021 TBA 1404 BGA-48-0608 BS616LV2021AC BS616LV2021AI BS616LV2021DC BS616LV2021DI

    BS616LV2013

    Abstract: BS616LV2013AC BS616LV2013AI BS616LV2013DC BS616LV2013DI BS616LV2013EC BS616LV2013EI BS616LV2013TC BS616LV2013TI TSOP2-44
    Text: Very Low Power/Voltage CMOS SRAM 128K X 16 bit B SI „ DESCRIPTION „ FEATURES • Very low operation voltage : 2.4 ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 20mA Max. operating current I -grade: 25mA (Max.) operating current 0.1uA (Typ.) CMOS standby current


    Original     		PDF 100ns x8/x16 BS616LV2013 R0201-BS616LV2013 BS616LV2013 BS616LV2013AC BS616LV2013AI BS616LV2013DC BS616LV2013DI BS616LV2013EC BS616LV2013EI BS616LV2013TC BS616LV2013TI TSOP2-44

    BS616LV2011

    Abstract: BS616LV2011AC BS616LV2011AI BS616LV2011DC BS616LV2011DI BS616LV2011EC BS616LV2011EI BS616LV2011TC BS616LV2011TI TSOP2-44
    Text: BSI Very Low Power/Voltage CMOS SRAM 128K X 16 bit „ FEATURES BS616LV2011 „ DESCRIPTION • Very low operation voltage : 2.4 ~ 5.5V • Very low power consumption : Vcc = 3.0V C-grade: 20mA Max. operating current I-grade: 25mA (Max.) operating current


    Original     		PDF BS616LV2011 100ns TSOP1-48PIN R0201-BS616LV2011 BS616LV2011 BS616LV2011AC BS616LV2011AI BS616LV2011DC BS616LV2011DI BS616LV2011EC BS616LV2011EI BS616LV2011TC BS616LV2011TI TSOP2-44

    BS616LV2013

    Abstract: BS616LV2013AC BS616LV2013AI BS616LV2013DC BS616LV2013DI BS616LV2013EC BS616LV2013EI BS616LV2013TC BS616LV2013TI TSOP2-44
    Text: BSI Very Low Power/Voltage CMOS SRAM 128K X 16 bit BS616LV2013 „ DESCRIPTION „ FEATURES The BS616LV2013 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits and operates from a wide range of 2.4V to 3.6V supply voltage.


    Original     		PDF BS616LV2013 BS616LV2013 BS616LV202 TSOP1-48PIN R0201-BS616LV2013 BS616LV2013AC BS616LV2013AI BS616LV2013DC BS616LV2013DI BS616LV2013EC BS616LV2013EI BS616LV2013TC BS616LV2013TI TSOP2-44

    UC62LV1024

    Abstract: No abstract text available
    Text: Low Power CMOS SRAM 64K X 16 UC62LV1024 -55/-70 Description Features: • Vcc operation voltage : 1.5 V~ 3.6V • Low power consumption : 15mA Max. operating current 1uA (Typ.) CMOS standby current • High Speed Access time : 70ns (Max.) at Vcc = 1.5V • Automatic power down when chip is deselected


    Original     		PDF UC62LV1024 UC62LV1024

    UC62LS2048

    Abstract: U-Chip Technology
    Text: Low Power CMOS SRAM 128K X 16 UC62LS2048 -20/-25 Description Features: • Vcc operation voltage : 3.0 V~ 3.6V • Low power consumption : 20mA Max. operating current 1uA (Typ.) CMOS standby current • High Speed Access time : 25ns (Max.) at Vcc = 3.0V


    Original     		PDF UC62LS2048 UC62LS2048 U-Chip Technology

    UC62LV4096

    Abstract: No abstract text available
    Text: Low Power CMOS SRAM 256K X 16 UC62LV4096 -55/-70 Description Features: • Vcc operation voltage : 1.5 V~ 3.6V • Low power consumption : 35mA Max. operating current 2uA (Typ.) CMOS standby current • High Speed Access time : 70ns (Max.) at Vcc = 1.5V


    Original     		PDF UC62LV4096 UC62LV4096 current21

    UC62LS4096

    Abstract: U-Chip Technology
    Text: Low Power CMOS SRAM 256K X 16 UC62LS4096 -20/-25 Description Features: • Vcc operation voltage : 3.0 V~ 3.6V • Low power consumption : 20mA Max. operating current 2uA (Typ.) CMOS standby current • High Speed Access time : 25ns (Max.) at Vcc = 3.0V


    Original     		PDF UC62LS4096 UC62LS4096 U-Chip Technology