TC 122 25 10 Search Results

tc 122 25 5

Abstract: tc122 25 9
Contextual Info: Fast Recovery Diodes Part Number VRRM V TO-262 TSF05A20-11A TSF05A40-11A TSF05A60-11A IFAV (A) Condition IFSM (A) VFM(V) IRM（mA) Tjmax 25°C (°C) 25°C trr (ns) Case Outline 5 5 5 Tc=122℃ Tc=118℃ Tc=107℃ 80 80 80 0.98 1.25 1.7 0.03 0.03 0.03 150

equivalent of TIP122

Abstract: TIP122
Contextual Info: TIP120/121/122 TIP120/121/122 Medium Power Linear Switching Applications • Complementary to TIP125/126/127 1 TO-220 1.Base 2.Collector 3.Emitter NPN Epitaxial Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter

equivalent of TIP122

Abstract: equivalent transistor tip122 TRANSISTOR tip122 TIP120 TIP121 TIP122
Contextual Info: TIP120/121/122 TIP120/121/122 Medium Power Linear Switching Applications • Complementary to TIP125/126/127 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter

equivalent of TIP122

Abstract: TIP120
Contextual Info: TIP120/121/122 TIP120/121/122 Medium Power Linear Switching Applications • Complementary to TIP125/126/127 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter

TIP122 transistor APPLICATION NOTES

Abstract: tip120 to-220 npn darlington TIP121 equivalent of TIP122 TRANSISTOR tip122 TIP120 TIP122T NPN Transistor TO220 VCEO 60V IC 5a
Contextual Info: TIP120/121/122 TIP120/121/122 Medium Power Linear Switching Applications • Complementary to TIP125/126/127 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter

SKKT106B18E

Abstract: 106B1
Contextual Info: SKKT 106B18 E G6 Absolute Maximum Ratings Symbol Conditions Values Unit Tc = 85 °C 122 A Tc = 100 °C 93 A Tj = 25 °C 2250 A Tj = 130 °C 1900 A Tj = 25 °C 25313 A2s Tj = 130 °C 18050 A2s VRSM 1900 V VRRM 1800 V Chip IT AV ITSM i2t SEMIPACK 1 Thyristor Modules

semikron skkh 106

Contextual Info: SKKH 106/16 E G6 Absolute Maximum Ratings Symbol Conditions Values Unit Tc = 85 °C 122 A Tc = 100 °C 93 A Tj = 25 °C 2250 A Tj = 130 °C 1900 A Tj = 25 °C 25313 A2s Tj = 130 °C 18050 A2s VRSM 1700 V VRRM 1600 V Chip IT AV ITSM i2t SEMIPACK 1 Thyristor / Diode Modules

106B12

Contextual Info: SKKT 106B12 E G6 Absolute Maximum Ratings Symbol Conditions Values Unit Tc = 85 °C 122 A Tc = 100 °C 93 A Tj = 25 °C 2250 A Tj = 130 °C 1900 A Tj = 25 °C 25313 A2s Tj = 130 °C 18050 A2s VRSM 1300 V VRRM 1200 V Chip IT AV ITSM i2t SEMIPACK 1 Thyristor Modules

106B1

Abstract: 106b16 E
Contextual Info: SKKT 106B16 E G6 Absolute Maximum Ratings Symbol Conditions Values Unit Tc = 85 °C 122 A Tc = 100 °C 93 A Tj = 25 °C 2250 A Tj = 130 °C 1900 A Tj = 25 °C 25313 A2s Tj = 130 °C 18050 A2s VRSM 1700 V VRRM 1600 V Chip IT AV ITSM i2t SEMIPACK 1 Thyristor Modules

semikron skkh 106

Contextual Info: SKKH 106/12 E G6 Absolute Maximum Ratings Symbol Conditions Values Unit Tc = 85 °C 122 A Tc = 100 °C 93 A Tj = 25 °C 2250 A Tj = 130 °C 1900 A Tj = 25 °C 25313 A2s Tj = 130 °C 18050 A2s VRSM 1300 V VRRM 1200 V Chip IT AV ITSM i2t SEMIPACK 1 Thyristor / Diode Modules

tip125

Contextual Info: TIP125/126/127 TIP125/126/127 Medium Power Linear Switching Applications • Complementary to TIP120/121/122 1 TO-220 1.Base 2.Collector 3.Emitter PNP Epitaxial Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter

TIP126

Abstract: tip127 data TIP127 TIP125 TIP120 equivalent
Contextual Info: TIP125/126/127 TIP125/126/127 Medium Power Linear Switching Applications • Complementary to TIP120/121/122 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter

tip127 application notes

Abstract: TIP120 equivalent TIP127 equivalent TIP125
Contextual Info: TIP125/126/127 TIP125/126/127 Medium Power Linear Switching Applications • Complementary to TIP120/121/122 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter

tc122 20 5 3

Abstract: tc 122 25 5 tc122 25 TC-138 tc122 tc122 25 4
Contextual Info: Schottky Diodes Part Number VRRM V IFAV (A) Condition IFSM (A) VFM(V) 25°C IRM（mA) 25°C Tjmax (°C) Case Outline TO-251 EA20QS04 EA20QS06 EA20QS09 EA20QS10 40 60 90 100 1.7 1.7 1.7 1.7 Tc=138℃ Tc=135℃ Tc=139℃ Tc=138℃ 40 40 40 40 0.55 0.58 0.85

Contextual Info: CXD8237Q 1/3 IL08 * C-MOS TC(TIME CODE) READER V DD (+5V) GND GND V DD (+5V) GND GND VDD (+5V) VDD (+5V) 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

Contextual Info: BCcomponents DATA SHEET Selection guide Leaded ceramic multilayer capacitors 1999 Aug 10 Supersedes data of 10th August 1999 File under BCcomponents, BC06 UR DC (V) CAP. RANGE CAP. TOL. CATALOGUE NUMBERS 2252 . . CLIMATIC CATEGORY STABILITY TYPICAL

Contextual Info: 120 DATA SHEET ARRAY CHIP RESISTORS YC/TC 5%, 1% sizes YC:102/104/122/124/162/164/248/324/158/358 TC: 122/124/164 Product specification – November 14, 2014 V.0 RoHS compliant 2 Product specification Chip Resistor Surface Mount YC/TC SERIES 12 102 to 358

GBJ406

Abstract: KBJ406 GBJ403 GBJ404 KBJ401 KBJ402 KBJ403 KBJ404 KBJ408 KBJ410
Contextual Info: SIYU R KBJ401 . KBJ410 塑封硅整流桥堆 Single-phase Silicon Bridge Rectifier 反向电压 50-1000V 正向电流 4.0 A Reverse Voltage 50 to 1000 V Forward Current 4.0 A 特征 Features + ~ .043 1.1 .035(0.9) •低的反向漏电流 Low reverse leakage

YC164 footprint

Abstract: YC324
Contextual Info: 120 DATA SHEET ARRAY CHIP RESISTORS YC/TC 5%, 1% sizes YC:102/104/122/124/162/164/248/324/158/358 TC: 122/124/164 Product specification – February 04, 2015 V.1 RoHS compliant Chip Resistor Surface Mount SCOPE This specification describes YC convex, flat and TC (concave)

Contextual Info: E L E C T R O N I C SB10200FC Power Schottky Rectifier - 10Amp 200Volt □ Features -Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 -High Junction Temperature Capability -Low forward voltage, high current capability -High surge capacity

TIP120

Abstract: TIP120 equivalent transistor tip120 Tip122 121 TIP122 TRANSISTOR tip122 TIP121 equivalent transistor tip122
Contextual Info: TIP120/121/122 TIP120/121/122 ◎ SEMIHOW REV.A0,Oct 2007 TIP120/121/122 TIP120/121/122 Monolithic Construction With Built In Base-Emitter Shunt Resistors PNP Epitaxial Silicon Darlington Transistor - High DC Current Gain : hFE=1000 @ VCE= 4V, IC= 3A Min.

Contextual Info: E L E C T R O N I C SB1040FC Power Schottky Rectifier - 10Amp 40Volt □ Features -Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 -High Junction Temperature Capability -Low forward voltage, high current capability -High surge capacity

STM32L051K8

Contextual Info: STM32L051x6 STM32L051x8 Access line ultra-low-power 32-bit MCU ARM -based Cortex®M0+, up to 64 KB Flash, 8 KB SRAM, 2 KB EEPROM, ADC Datasheet - production data Features • • • • Ultra-low-power platform – 1.65 V to 3.6 V power supply – -40 to 105/125 °C temperature range

tc122 20 5 3

Abstract: tc122 25 8 tc122 25 6 2 TC122 25 8 2 tc122 25 6 TC122 tc122 25 3-phase diode rectification tc122 20 - 5
Contextual Info: DIODE MODULE DWF R 100A30/40 DWF （R） 100A is a non-isolated diode module designed for 3 phase rectification. ● IF （AV） ＝100A, VRRM＝400V Construction with Joint-Cathode（F） Type and Joint-Anode （R） type. ● Non-isolated.（Mounting Base as terminals.）