TC 4516 Search Results

Contextual Info: Detailed Specifications & Technical Data ENGLISH MEASUREMENT VERSION 83396 Multi-Conductor - Control and Instrumentation Cable For more Information please call 1-800-Belden1 Description: 22 AWG stranded 7x30 TC conductors, conductors cabled, 22 AWG (7x30) stranded TC drain wire, FEP

pin diagram decoder 4511 AND

Abstract: 4511 logic diagram pin diagram decoder 4511 4029B 40511 pin configuration 4511 4510B 4511 pin configuration ci 4511 1H90
Contextual Info: FAIRCHILD LOGIC/CONNECTION DIAGRAMS DIGITAL-CMOS C48 40162B,40163B 9 3 4 5 C49 4522B, 4526B 6 3 5 11 14 C50 4510B, 4516B 1 4 12 13 3 PL Pq Pi ?2 P3 2 5 - O CE 1 5 - CP 1 0 - U P/DN MR TC Q0 Q, Q2 Q3 6 11 14 2 ''DD = Pin 16 Pin 8 vss VSS " Pin 8

3digit up down counter

Abstract: pin diagram 4 bit asynchronous binary up counter pin diagram asynchronous binary up down counter 40188 4553B 4518B 40178 4022B c91 02 4029B
Contextual Info: FAIRCHILD LOGIC/CONNECTION DIAGRAMS DIGITAL-CMOS C48 40162B,40163B 9 3 4 5 C49 4522B, 4526B 6 3 5 11 14 C50 4510B, 4516B 1 4 12 13 3 PL Pq Pi ?2 P3 2 5 - O CE 1 5 - CP 1 0 - U P/DN MR TC Q0 Q, Q2 Q3 6 11 14 2 ''DD = Pin 16 Pin 8 vss VSS " Pin 8

ad550

Abstract: DAC with BCD input bcd to analog converter digital to bcd converter binary bcd conversion logic diagram binary to bcd 12 bits BCD to Binary conversion circuit for the input data DAC-QM DAC with BCD input analog devices
Contextual Info: ANALOG ► DEVICES High Performance Digital to Analog Converters FEATURES 8-, 10-, 12-Bit Resolutions and Accuracies Low TC ±7ppm /° C Complete with Register (IDAC-QM) Binary oir BCD Coding Output Range Customer Programmed Output Ranges Available: + 5 V , + 1 0 V , ± 2 .5 V , ± 5 V , ± 1 0 V

Contextual Info: HTXYS Advanced Data ^ • 1liv I u DSI 45 VRRM = 800 -1600 V Rectifier Diode 'f.'A V .M = 48 A TO-247 1300 1700 1200 1600 c DSI 45-12A DSI 45-16A A A = Anode, C = Cathode, TAB = Cathode Symbol Test Conditions ^F AV M Tc ^FSM l2t Maximum Ratings = 105°C; 180° sine

INVERTER 94V-0

Contextual Info: DSIK 45 VRRM = 1600 V IF AV M = 45 A Rectifier Diode with common cathode Preliminary data sheet VRSM V 1700 VRRM A Type C A ISOPLUS 247TM V 1600 A C A DSIK 45-16AR TAB A = Anode, C = Cathode Conditions IF(AV)M TC IFSM TVJ = 45°C; VR = 0 V; I2t Maximum Ratings

ir 0588

Abstract: 45-16AR DSI45
Contextual Info: DSI 45-16AR VRRM = 1600 V IF AV M = 48 A Rectifier Diode VRSM V 1700 VRRM Type A ISOPLUS247TM C V 1600 C DSI 45-16AR TAB A A = Anode, C = Cathode Symbol Conditions IF(AV)M TC = 105°C; 180° sine IFSM TVJ = 45°C; VR = 0 V; I2t Features Maximum Ratings 48

ms10 diode

Contextual Info: Rectifier Diode v RSM Type V VRRM V 900 1300 1700 800 1200 1600 DSI 45-08A DSI 45-12A DSI 45-16A RRM IT \ c = 800-1600 V TO-247 AD ISOPLUS 247 Version A Version AR DSI 45-16AR C TAB TAB A = Anode, C = Cathode Features Symbol Test Conditions ^F(AV)M Tc

Contextual Info: DSI 45-16AR VRRM = 1600 V IF AV M = 48 A Rectifier Diode VRSM V 1700 VRRM Type A ISOPLUS247TM C V 1600 C DSI 45-16AR TAB A A = Anode, C = Cathode Symbol Conditions IF(AV)M TC = 105°C; 180° sine IFSM TVJ = 45°C; VR = 0 V; I2t Features Maximum Ratings 48

CS 45-16io1R

Contextual Info: CS 45 Phase Control Thyristor VRRM = 800-1600 V IT RMS = 75 A IT(AV)M = 48 A VRSM VRRM TO-247 AD VDSM VDRM V V Type A C 800 1200 1600 CS 45-08io1 CS 45-12io1 CS 45-16io1 CS 45-16io1R Symbol Conditions IT(RMS) IT(AV)M TVJ = TVJM TC = 75°C; 180° sine ITSM

ixys dsi 45-12a

Abstract: DSI45 ixys dsi IXYS DSI 45 W 1.5k
Contextual Info: DSI 45 VRRM = 800-1600 V IF AV M = 48 A Rectifier Diode VRSM V 900 1300 1700 VRRM Type A TO-247 AD ISOPLUS 247TM Version A Version AR V 800 1200 1600 DSI 45-08A DSI 45-12A DSI 45-16A C C A DSI 45-16AR Symbol Conditions IF(AV)M TC = 105°C; 180° sine IFSM

45-16AR

Abstract: Phase-leg Rectifier Diode E72873 ISOPLUS247 4516ar
Contextual Info: DSP 45-16AR VRRM = 1600 V IF RMS = 2x70 A IF(AV)M = 2x45 A Phase-leg Rectifier Diode VRSM VRRM V V 1700 1600 1 Type 2 3 ISOPLUS247 1 2 DSP 45-16AR TAB 3 1 = Cathode, 2 = Anode/Cathode, 3 = Anode Symbol Conditions IF(RMS) IF(AV)M TVJ = TVJM TC = 100°C; 180° sine

Contextual Info: CS 45 Phase Control Thyristor VRRM = 800-1600 V IT RMS = 75 A IT(AV)M = 48 A VRSM VRRM TO-247 AD VDSM VDRM V V 900 1300 1700 800 1200 1600 Type A IT(RMS) IT(AV)M TVJ = TVJM TC = 75°C; 180° sine ITSM TVJ = 45°C; VR = 0 V TVJ = TVJM VR = 0 V it (di/dt)cr

VB013

Abstract: 20-16N 25-12N02 30-12N07 20-16A02 25-16A02 036-08N 6512N 13-12A02 72-08N07
Contextual Info: O 1~ Rectifier Bridges Type >• New V FIRM v vRMS 1dAV @ p TC *FSM °C 45°C 10 ms A V m ö °C V T0 rT P thJC p o 2 r i ii. 6.0 1.5 2.5 40 3.0 0.75 3.4 0.85 3.4 2.8 0.7 3.2 0.8 3.4 V VBO 13-12A02 VBO13-16A02 1200 1600 400 500 18 85 220 0.85 17 150 5.6 1.4

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4516CD646 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CD646 is a 16,777,216 words by 64 bits synchronous dynamic RAM module on which 16 pieces of

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CD64KS 16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description ★ The MC-4516CD64KS is a 16,777,216 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 8 pieces of 128 M SDRAM: ,uPD45128163 are assembled.

Contextual Info: DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-4516CC724 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CC724 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516DC72 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-4516DC72 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64M SDRAM : ,uPD4564841 are assembled.

Contextual Info: PRELIMINARY DATA SHEET_ NEC MOS INTEGRATED CIRCUIT MC-4516DC72 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE BUFFERED TYPE Description The MC-4516DC72 is a 16,777,216 words by 72 bits synchronous dynam ic RAM module on which 18 pieces of

4516CD

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CD641ES 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-4516CD641 ES is a 16,777,216 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 8 pieces of 128M SDRAM: ,uPD45128163 are assembled.

HEF4516BD

Abstract: 72595
Contextual Info: HEF4516B MSI BINARY UP/DOWN COUNTER T he H E F 4516B is an edge-triggered synchronous u p /d o w n 4 -b it b in a ry c o u n te r w ith a c lo c k in p u t CP , an u p /d o w n c o u n t co n tro l in p u t (U P /D N ), an active LOW c o u n t enable in p u t (CE), an

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4516CD645 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CD645 is a 16,777,216 words by 64 bits synchronous dynamic RAM module on which 16 pieces of

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516DA727 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-4516DA727 is an 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64M SDRAM : ,uPD4564441 are assembled.

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4516CC725 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CC725 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of