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    TC 826 SC Datasheets Context Search

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    CH89 diode

    Abstract: 744 822 110 VR90 CV7142 VR30 VR50 CH52
    Contextual Info: ESA Qualified SMPS Capacitors High Voltage Chip/Leaded Capacitors HIGH VOLTAGE CHIP CAPACITORS Capacitors, Fixed, Chip, Ceramic Dielectric, Type II, High Voltage, Based on Styles 1812 and 1825 for use in ESA space programs, according to ESA/ SCC Generic Specification 3009 and associated Detail Specification


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    CH52

    Abstract: CH87 142 CH-53 CH64 BR40 300903401C 300103 VR66
    Contextual Info: ESA Qualified SMPS Capacitors High Voltage Chip/Leaded Capacitors HIGH VOLTAGE CHIP CAPACITORS Capacitors, Fixed, Chip, Ceramic Dielectric, Type II, High Voltage, Based on Styles 1812 and 1825 for use in ESA space programs, according to ESA/ SCC Generic Specification 3009 and associated Detail Specification


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    FP0705R2-R22-R

    Abstract: marking code R33 SMD Transistor marking R33 SMD FP0705 J-STD-020D
    Contextual Info: High Current, Low-Profile Power Inductors FLAT-PAC FP0705 Series Applications • • • • • • • • SMD Device Portable electronics Servers and workstations Data networking and storage systems Notebook and desktop computers Graphics cards and battery power systems


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    FP0705 220nH BU-SB08210 FP0705R2-R22-R marking code R33 SMD Transistor marking R33 SMD J-STD-020D PDF

    Contextual Info: High Current, Low-Profile Power Inductors FLAT-PAC FP0705 Series Applications • • • • • • • • SMD Device Portable electronics Servers and workstations Data networking and storage systems Notebook and desktop computers Graphics cards and battery power systems


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    FP0705 220nH BU-SB08210 PDF

    osram LED of oslon

    Abstract: ILR-ON10-NUWH-SC201-WIR200
    Contextual Info: Datasheet Oslon high bright LEDs from Osram LED Solutions Oslon10 Cluster White ILR-ON10-xxxx-SC201-xx series Product Overview At the heart of each Oslon10 Cluster are ten Osram Opto Semiconductors’ Oslon LEDs which give very high light output. Oslon10 Clusters are compact very powerful LED


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    Oslon10 ILR-ON10-xxxx-SC201-xx osram LED of oslon ILR-ON10-NUWH-SC201-WIR200 PDF

    SBL4030PT

    Contextual Info: E L E C T R O N I C SBL4030PT Power Schottky Rectifier - 40Amp 30Volt □ Features -Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 -High Junction Temperature Capability -Low forward voltage, high current capability -High surge capacity


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    SBL4030PT 40Amp 30Volt O-247AD SBL4030PT PDF

    SBL3030PT

    Abstract: TO247AD
    Contextual Info: E L E C T R O N I C SBL3030PT Power Schottky Rectifier - 30Amp 30Volt □ Features -Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 -High Junction Temperature Capability -Low forward voltage, high current capability -High surge capacity


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    SBL3030PT 30Amp 30Volt O-247AD SBL3030PT TO247AD PDF

    si7726

    Contextual Info: Si7726DN Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)e RDS(on) (Ω) 30 0.0095 at VGS = 10 V 35 0.0125 at VGS = 4.5 V 35 Qg (Typ.) 12.5 nC PowerPAK 1212-8 APPLICATIONS S 3.30 mm • DC/DC Converter


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    Si7726DN Si7726DN-T1-GE3 11-Mar-11 si7726 PDF

    Contextual Info: New Product SiS780DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.0135 at VGS = 10 V 18a 0.0175 at VGS = 4.5 V 18a Qg (Typ.) 7.3 nC • Halogen-free According to IEC 61249-2-21


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    SiS780DN 2002/95/EC SiS780DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: Si7720DN Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)e RDS(on) (Ω) 30 0.0125 at VGS = 10 V 12 0.015 at VGS = 4.5 V 12 Qg (Typ.) 13.7 nC PowerPAK 1212-8 S 3.30 mm • Notebook PC - System Power • Buck Converter


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    Si7720DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: New Product SiS780DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.0135 at VGS = 10 V 18a 0.0175 at VGS = 4.5 V 18a Qg (Typ.) 7.3 nC • Halogen-free According to IEC 61249-2-21


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    SiS780DN 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiS782DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)e RDS(on) () 30 0.0095 at VGS = 10 V 16 0.0120 at VGS = 4.5 V 16 Qg (Typ.) 9.5 nC PowerPAK 1212-8 S 3.30 mm APPLICATIONS 3.30 mm 1 S 2 • Notebook PC


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    SiS782DN 2002/95/EC SiS782DN-T1-GE3 11-Mar-11 PDF

    Contextual Info: New Product SiS780DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.0135 at VGS = 10 V 18a 0.0175 at VGS = 4.5 V 18a Qg (Typ.) 7.3 nC • Halogen-free According to IEC 61249-2-21


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    SiS780DN 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: New Product SiS780DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.0135 at VGS = 10 V 18a 0.0175 at VGS = 4.5 V 18a Qg (Typ.) 7.3 nC • Halogen-free According to IEC 61249-2-21


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    SiS780DN 2002/95/EC SiS780DN-T1-GE3 11-Mar-11 PDF

    Contextual Info: Si7720DN Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)e RDS(on) (Ω) 30 0.0125 at VGS = 10 V 12 0.015 at VGS = 4.5 V 12 Qg (Typ.) 13.7 nC PowerPAK 1212-8 S 3.30 mm • Notebook PC - System Power • Buck Converter


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    Si7720DN Si7720DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: Si7720DN Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)e RDS(on) (Ω) 30 0.0125 at VGS = 10 V 12 0.015 at VGS = 4.5 V 12 Qg (Typ.) 13.7 nC PowerPAK 1212-8 S 3.30 mm • Notebook PC - System Power • Buck Converter


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    Si7720DN Si7720DN-T1-GE3 11-Mar-11 PDF

    Contextual Info: SiS778DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)e 0.0050 at VGS = 10 V 35 0.0062 at VGS = 4.5 V 35 VDS (V) 30 Qg (Typ.) 13.3 nC PowerPAK 1212-8 S 3.30 mm 3.30 mm 1 APPLICATIONS S 2


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    SiS778DN 2002/95/EC SiS778DN-T1-GE3 11-Mar-11 PDF

    Si7726DN

    Contextual Info: Si7726DN Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)e RDS(on) (Ω) 30 0.0095 at VGS = 10 V 35 0.0125 at VGS = 4.5 V 35 Qg (Typ.) 12.5 nC PowerPAK 1212-8 APPLICATIONS S 3.30 mm • DC/DC Converter


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    Si7726DN Si7726DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: New Product Si4712DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.013 at VGS = 10 V 14.6 0.0165 at VGS = 4.5 V 12.9 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • SkyFET Monolithic TrenchFET® Power


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    Si4712DY 2002/95/EC Si4712DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    S11117

    Contextual Info: SiS782DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)e RDS(on) () 30 0.0095 at VGS = 10 V 16 0.0120 at VGS = 4.5 V 16 Qg (Typ.) 9.5 nC PowerPAK 1212-8 S 3.30 mm APPLICATIONS 3.30 mm 1 S 2 • Notebook PC


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    SiS782DN 2002/95/EC SiS782DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 S11117 PDF

    Contextual Info: SiS782DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)e RDS(on) () 30 0.0095 at VGS = 10 V 16 0.0120 at VGS = 4.5 V 16 Qg (Typ.) 9.5 nC PowerPAK 1212-8 S 3.30 mm APPLICATIONS 3.30 mm 1 S 2 • Notebook PC


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    SiS782DN 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: New Product Si7758DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0029 at VGS = 10 V 60 0.0038 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 46 nC PowerPAK SO-8 S 6.15 mm • Notebook CPU Core


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    Si7758DP 2002/95/EC Si7758DP-T1-GE3 11-Mar-11 PDF

    Contextual Info: New Product Si7794DP Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0034 at VGS = 10 V 60 0.0042 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 23 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


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    Si7794DP 2002/95/EC Si7794DP-T1-GE3 11-Mar-11 PDF

    Contextual Info: New Product Si7758DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0029 at VGS = 10 V 60 0.0038 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 46 nC PowerPAK SO-8 S 6.15 mm • Notebook CPU Core


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    Si7758DP 2002/95/EC Si7758DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF