TC 826 SC Search Results
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TC 826 SC Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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CH89 diode
Abstract: 744 822 110 VR90 CV7142 VR30 VR50 CH52
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CH52
Abstract: CH87 142 CH-53 CH64 BR40 300903401C 300103 VR66
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FP0705R2-R22-R
Abstract: marking code R33 SMD Transistor marking R33 SMD FP0705 J-STD-020D
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FP0705 220nH BU-SB08210 FP0705R2-R22-R marking code R33 SMD Transistor marking R33 SMD J-STD-020D | |
Contextual Info: High Current, Low-Profile Power Inductors FLAT-PAC FP0705 Series Applications • • • • • • • • SMD Device Portable electronics Servers and workstations Data networking and storage systems Notebook and desktop computers Graphics cards and battery power systems |
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FP0705 220nH BU-SB08210 | |
osram LED of oslon
Abstract: ILR-ON10-NUWH-SC201-WIR200
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Oslon10 ILR-ON10-xxxx-SC201-xx osram LED of oslon ILR-ON10-NUWH-SC201-WIR200 | |
SBL4030PTContextual Info: E L E C T R O N I C SBL4030PT Power Schottky Rectifier - 40Amp 30Volt □ Features -Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 -High Junction Temperature Capability -Low forward voltage, high current capability -High surge capacity |
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SBL4030PT 40Amp 30Volt O-247AD SBL4030PT | |
SBL3030PT
Abstract: TO247AD
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SBL3030PT 30Amp 30Volt O-247AD SBL3030PT TO247AD | |
si7726Contextual Info: Si7726DN Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)e RDS(on) (Ω) 30 0.0095 at VGS = 10 V 35 0.0125 at VGS = 4.5 V 35 Qg (Typ.) 12.5 nC PowerPAK 1212-8 APPLICATIONS S 3.30 mm • DC/DC Converter |
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Si7726DN Si7726DN-T1-GE3 11-Mar-11 si7726 | |
Contextual Info: New Product SiS780DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.0135 at VGS = 10 V 18a 0.0175 at VGS = 4.5 V 18a Qg (Typ.) 7.3 nC • Halogen-free According to IEC 61249-2-21 |
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SiS780DN 2002/95/EC SiS780DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: Si7720DN Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)e RDS(on) (Ω) 30 0.0125 at VGS = 10 V 12 0.015 at VGS = 4.5 V 12 Qg (Typ.) 13.7 nC PowerPAK 1212-8 S 3.30 mm • Notebook PC - System Power • Buck Converter |
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Si7720DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: New Product SiS780DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.0135 at VGS = 10 V 18a 0.0175 at VGS = 4.5 V 18a Qg (Typ.) 7.3 nC • Halogen-free According to IEC 61249-2-21 |
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SiS780DN 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SiS782DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)e RDS(on) () 30 0.0095 at VGS = 10 V 16 0.0120 at VGS = 4.5 V 16 Qg (Typ.) 9.5 nC PowerPAK 1212-8 S 3.30 mm APPLICATIONS 3.30 mm 1 S 2 • Notebook PC |
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SiS782DN 2002/95/EC SiS782DN-T1-GE3 11-Mar-11 | |
Contextual Info: New Product SiS780DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.0135 at VGS = 10 V 18a 0.0175 at VGS = 4.5 V 18a Qg (Typ.) 7.3 nC • Halogen-free According to IEC 61249-2-21 |
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SiS780DN 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: New Product SiS780DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.0135 at VGS = 10 V 18a 0.0175 at VGS = 4.5 V 18a Qg (Typ.) 7.3 nC • Halogen-free According to IEC 61249-2-21 |
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SiS780DN 2002/95/EC SiS780DN-T1-GE3 11-Mar-11 | |
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Contextual Info: Si7720DN Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)e RDS(on) (Ω) 30 0.0125 at VGS = 10 V 12 0.015 at VGS = 4.5 V 12 Qg (Typ.) 13.7 nC PowerPAK 1212-8 S 3.30 mm • Notebook PC - System Power • Buck Converter |
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Si7720DN Si7720DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: Si7720DN Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)e RDS(on) (Ω) 30 0.0125 at VGS = 10 V 12 0.015 at VGS = 4.5 V 12 Qg (Typ.) 13.7 nC PowerPAK 1212-8 S 3.30 mm • Notebook PC - System Power • Buck Converter |
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Si7720DN Si7720DN-T1-GE3 11-Mar-11 | |
Contextual Info: SiS778DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)e 0.0050 at VGS = 10 V 35 0.0062 at VGS = 4.5 V 35 VDS (V) 30 Qg (Typ.) 13.3 nC PowerPAK 1212-8 S 3.30 mm 3.30 mm 1 APPLICATIONS S 2 |
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SiS778DN 2002/95/EC SiS778DN-T1-GE3 11-Mar-11 | |
Si7726DNContextual Info: Si7726DN Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)e RDS(on) (Ω) 30 0.0095 at VGS = 10 V 35 0.0125 at VGS = 4.5 V 35 Qg (Typ.) 12.5 nC PowerPAK 1212-8 APPLICATIONS S 3.30 mm • DC/DC Converter |
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Si7726DN Si7726DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: New Product Si4712DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.013 at VGS = 10 V 14.6 0.0165 at VGS = 4.5 V 12.9 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • SkyFET Monolithic TrenchFET® Power |
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Si4712DY 2002/95/EC Si4712DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
S11117Contextual Info: SiS782DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)e RDS(on) () 30 0.0095 at VGS = 10 V 16 0.0120 at VGS = 4.5 V 16 Qg (Typ.) 9.5 nC PowerPAK 1212-8 S 3.30 mm APPLICATIONS 3.30 mm 1 S 2 • Notebook PC |
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SiS782DN 2002/95/EC SiS782DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 S11117 | |
Contextual Info: SiS782DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)e RDS(on) () 30 0.0095 at VGS = 10 V 16 0.0120 at VGS = 4.5 V 16 Qg (Typ.) 9.5 nC PowerPAK 1212-8 S 3.30 mm APPLICATIONS 3.30 mm 1 S 2 • Notebook PC |
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SiS782DN 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: New Product Si7758DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0029 at VGS = 10 V 60 0.0038 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 46 nC PowerPAK SO-8 S 6.15 mm • Notebook CPU Core |
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Si7758DP 2002/95/EC Si7758DP-T1-GE3 11-Mar-11 | |
Contextual Info: New Product Si7794DP Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0034 at VGS = 10 V 60 0.0042 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 23 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 |
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Si7794DP 2002/95/EC Si7794DP-T1-GE3 11-Mar-11 | |
Contextual Info: New Product Si7758DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0029 at VGS = 10 V 60 0.0038 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 46 nC PowerPAK SO-8 S 6.15 mm • Notebook CPU Core |
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Si7758DP 2002/95/EC Si7758DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 |