TC 9123 Search Results

452 diode

Contextual Info: Zero-TC Reference Diodes Part Number ; Microsemi Division Scottsdale 1N4S65A Scottsdale 1N4565A-1 Scottsdale 1N4566 Scottsdale 1N4566-1 Scottsdale 1N4566A Scottsdale 1N4566A-1 Scottsdale 1N4567 Scottsdale 1N4567-1 Scottsdale 1N4567A Scottsdale 1N4567A-1 Scottsdale

780nm 5MW infrared laser diodes

Abstract: 780nm laser diode N780-5 laser 780nm 780nm laser diode 8 mW
Contextual Info: NVG, INC. INFRARED LASER DIODES Technical Data MODEL # N780-5 INFRARED DIODE LASER ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA • Index Guided MQW Structure • Wavelength: 780nm (Typ.) • Optical Power: 5mW CW • Threshold Current: 25mA (Typ.)

808nm

Abstract: N808-5
Contextual Info: NVG, INC. INFRARED LASER DIODES Technical Data MODEL # N808-5 INFRARED DIODE LASER ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA • Index Guided MQW Structure • Wavelength: 808nm (Typ.) • Optical Power: 5mW CW • Threshold Current: 20mA (Typ.)

N635-5

Abstract: pin photo diodes
Contextual Info: NVG, INC. VISIBLE LASER DIODES Technical Data MODEL # N635-5 VISIBLE DIODE LASER ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA • Index Guided MQW Structure • Wavelength: 635nm (Typ.) • Optical Power: 10mW CW • Threshold Current: 40mA (Typ.)

NVG laser diodes

Abstract: 670NM Laser-Diode SD670-5 670NM
Contextual Info: NVG, INC. VISIBLE LASER DIODES Technical Data MODEL # SD670-5 VISIBLE DIODE LASER ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA • Index Guided MQW Structure • Wavelength: 670nm (Typ.) • Optical Power: 5mW CW • Threshold Current: 25mA (Typ.)

SD635-5

Abstract: photo diode 635nm
Contextual Info: NVG, INC. VISIBLE LASER DIODES Technical Data MODEL # SD635-5 VISIBLE DIODE LASER ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA • Index Guided MQW Structure • Wavelength: 635nm (Typ.) • Optical Power: 5mW CW • Threshold Current: 30mA (Typ.)

904nm laser diode

Abstract: 904nm DIODE 914 INFRARED DIODES N904-5
Contextual Info: NVG, INC. INFRARED LASER DIODES Technical Data MODEL # N904-5 INFRARED DIODE LASER ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA • Index Guided MQW Structure • Wavelength: 904nm (Typ.) • Optical Power: 5mW CW • Threshold Current: 20mA (Typ.)

"Photo Diode"

Abstract: N840-5 Laser Diode 10 pin
Contextual Info: NVG, INC. INFRARED LASER DIODES Technical Data MODEL # N840-5 INFRARED DIODE LASER ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA • Index Guided MQW Structure • Wavelength: 840nm (Typ.) • Optical Power: 5mW CW • Threshold Current: 20mA (Typ.)

655NM

Abstract: N6555 N655-5 655-nm
Contextual Info: NVG, INC. VISIBLE LASER DIODES Technical Data MODEL # N655-5 VISIBLE DIODE LASER ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA • Index Guided MQW Structure • Wavelength: 655nm (Typ.) • Optical Power: 5mW CW • Threshold Current: 20mA (Typ.)

650nm 5mw laser

Abstract: D660-5 650nm 5mw 5v laser laser diode mttf 660nm 650NM laser diode 5mw 650nm 5mw laser diode
Contextual Info: NVG, INC. VISIBLE LASER DIODES Technical Data MODEL # D660-5 VISIBLE DIODE LASER ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA • Index Guided MQW Structure • Wavelength: 660nm (Typ.) • Optical Power: 5mW CW • Threshold Current: 20mA (Typ.)

650nm 5mw laser

Abstract: 650nm 5mw 5v laser 650nm 5mw laser diode 650NM laser diode 5mw D650-5 650nm
Contextual Info: NVG, INC. VISIBLE LASER DIODES Technical Data MODEL # D650-5 VISIBLE DIODE LASER ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA • Index Guided MQW Structure • Wavelength: 650nm (Typ.) • Optical Power: 5mW CW • Threshold Current: 20mA (Typ.)

tc 9123

Abstract: IC 9122 IRFF9121 IRFF9122 IRFF9120 IRFF9123 9121
Contextual Info: SILICONIX INC IflE I> f Ô254735 D014Ô33 2 U IRFF9120/9121 /9122/9123 « y S ilìc o n ix J M • in c o r p o ra te d P-Channel Enhancement Mode Transistors " T - l 0! - ! 0 ! TQ-205AF BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V BR DSS IRFF9120 •d ,Dg r

Contextual Info: 4 3 0 5 2 7 1 □ □ 5 4 5 ci? tBT • H a r r is HAS IR F F 9120, IR F F 9121 IR F F 9122, IR F F 9123 Avalanche Energy Rated P-Channel Power MOSFETs January 1994 Features Package T 0 -2 0 5 A F • -3.5 A and -4A , -8 0 V and -1 0 0 V BOTTOM VIEW • rDS ON = o .e o n and 0.80 H

IRF9120

Abstract: IRFP9120 IRF9120 mosfet IRF9121 IRF 9520 IRF 9120 IRF912213 IRF 9122 IRF9520 IRFP9121
Contextual Info: IRF9120/912110122/9123 « IRFP9120/9121 /9122/9123: IRF9520/9521 /9Ö22/9523 •. P-CHANNEL POWER MOSFETS P r e l i m i n a r y Sn&nifinatinncì Tfi DE 7 clfc>41Lt2 D0054DE 1 | ” uuv/i öUmiviAKY •y*' 3 ^ SAMSUNG SEM ICO ND UC TOR INC -1 0 0 volt, 0.60 Ohm SFET

IRFP460

Abstract: irfp460pbf IRFP460 application irfp460 datasheet SiHFP460 irfp460 mosfet
Contextual Info: IRFP460, SiHFP460 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.27 Available Qg (Max.) (nC) 210 • Isolated Central Mounting Hole Qgs (nC) 29 • Fast Switching

MS1022

Contextual Info: IRFP460, SiHFP460 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.27 Available Qg (Max.) (nC) 210 • Isolated Central Mounting Hole Qgs (nC) 29 • Fast Switching

9137

Abstract: surface mount IRFZ44N IRFK3D450 IRFK4H054 IRLI640G IRFBg30 equivalent hexfet power mosfets international rectifier IRFP260 IRC540 equivalent irf 3250
Contextual Info: HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) Rθ A Max Thermal Resistance (°C/W) P Max.

IRFP460 application

Abstract: IRFP460PBF irfp460 mosfet IRFP460 SiHFP460 siliconix irfp460 MJ 2400 irfp460 i SILICONIX MARKING IRFP460 irfp460 siliconix
Contextual Info: IRFP460, SiHFP460 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.27 Available Qg (Max.) (nC) 210 • Isolated Central Mounting Hole Qgs (nC) 29 • Fast Switching

COP684CL

Abstract: COP688CL COP884CL COP888CL COP984CL COP988CL
Contextual Info: COP888CL 8-Bit Microcontroller General Description I/O Features The following part numbers are pin count and temperature variations of the COP888CL: COP688CL, COP684CL, COP884CL, COP988CL, COP984CL. The COP888 family of microcontrollers uses an 8-bit single

COP884

Contextual Info: COP688CL/COP684CL, COP888CL/COP884CL, COP988CL/COP984CL 8-Bit Microcontroller General Description The COP888 family of microcontrollers uses an 8-bit single chip core architecture fabricated with National Semiconductor’s M2CMOS process technology. The COP888CL is a

Contextual Info: COP888CL COP888CL 8-Bit Microcontroller Literature Number: SNOSC53C COP888CL 8-Bit Microcontroller General Description I/O Features The following part numbers are pin count and temperature variations of the COP888CL: COP688CL, COP684CL, COP884CL, COP988CL, COP984CL.

Contextual Info: IRFP460, SiHFP460 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.27 Available Qg (Max.) (nC) 210 • Isolated Central Mounting Hole Qgs (nC) 29 • Fast Switching

irfp460a

Abstract: IRFP460APBF SiHFP460A
Contextual Info: IRFP460A, SiHFP460A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Available Requirement • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage

IRP460

Abstract: IRFP460A SiHFP460A irp460a
Contextual Info: IRFP460A, SiHFP460A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current