TC 9742 Search Results

Contextual Info: PD -97428A IRFH5020PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) 200 V 55 mΩ 36 1.9 nC Ω 34 A PQFN 5X6 mm Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors

IRFH5306TR2PBF

Abstract: IRFH5306PBF IRFH5306TRPBF IRFH5306 AN-1154
Contextual Info: PD - 97429 IRFH5306PbF HEXFET Power MOSFET VDS 30 V 8.1 mΩ nC RG typical 7.8 1.4 ID 44 A RDS(on) max (@VGS = 10V) Qg (typical) (@Tc(Bottom) = 25°C) Ω PQFN 5X6 mm Applications • Control MOSFET for buck converters Features and Benefits Benefits Features

IRFH5020PbF

Abstract: AN-1154 IRFH5020TR2PBF IRFH5020TRPBF IRFH5020 PQFN footprint
Contextual Info: PD -97428 IRFH5020PbF HEXFET Power MOSFET VDS 200 V RDS on max 55 m 36 1.9 nC 43 A (@VGS = 10V) Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) : : PQFN 5X6 mm Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications

Contextual Info: PD - 97429 IRFH5306PbF HEXFET Power MOSFET V DS 30 V R DS on max 8.1 mΩ Qg (typical) 7.8 nC R G (typical) 1.4 Ω ID 44 A (@VGS = 10V) (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • Control MOSFET for buck converters Features and Benefits Features

IRFH5020

Contextual Info: PD -97428B IRFH5020PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) 200 V 55 mΩ 36 1.9 nC Ω 34 A PQFN 5X6 mm Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications

Contextual Info: PD - 97429 IRFH5306PbF HEXFET Power MOSFET V DS 30 V R DS on max 8.1 mΩ Qg (typical) 7.8 nC R G (typical) 1.4 Ω ID 44 A (@VGS = 10V) (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • Control MOSFET for buck converters Features and Benefits Features Low charge (typical 7.8nC)

Contextual Info: PD - 97425 IRGP4069DPbF IRGP4069D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 S short circuit SOA

IRGP4069D

Abstract: irgp4069dpbf
Contextual Info: PD - 97425 IRGP4069DPbF IRGP4069D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 µS short circuit SOA

RR350

Abstract: S100-200
Contextual Info: PD - 97425 IRGP4069DPbF IRGP4069D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 S short circuit SOA

AOZ1022DIL

Abstract: 22-A115-A JESD A114 84-3J AOZ1360AIL 2P3M UMC A115A DFN 4X4 AOZ1360DI 2P3M
Contextual Info: AOS Semiconductor Product Reliability Report AOZ1360AIL/DIL, rev 3 Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com Feb 26, 2009 1 This AOS product reliability report summarizes the qualification result for AOZ1360AI/AIL (SO8

DSAQ

Contextual Info: PD - 97426 IRGP4069PbF IRGP4069-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 S short circuit SOA Square RBSOA 100% of The Parts Tested for ILM

IRGP4069-EPbF

Abstract: IRGP4069PbF transistor* igbt 70A 300 V
Contextual Info: PD - 97426 IRGP4069PbF IRGP4069-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 µS short circuit SOA Square RBSOA 100% of The Parts Tested for ILM

IRGP4069-EPbF

Contextual Info: PD - 97426 IRGP4069PbF IRGP4069-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • C Low VCE ON Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 S short circuit SOA Square RBSOA 100% of The Parts Tested for ILM

A194-FH

Abstract: A194FH marking A03 AOZ8005CI 84-3J semiconductor body marking marking A02 a194 IEC-61000-4-2 ESD test plan
Contextual Info: AOS Semiconductor Product Reliability Report AOZ8005CI, rev 1 Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com Mar 26, 2007 1 This AOS product reliability report summarizes the qualification result for AOZ8005CI.

CEL9220HF13

Abstract: ablebond 8006ns cel9220 CEL-9220HF13 CEL9220HF 8006ns ablebond 84-3J cel-9220 Ablebond cel-9220HF
Contextual Info: AOS Semiconductor Product Reliability Report AOZ8001JI, rev 1 Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com Mar 27, 2007 1 This AOS product reliability report summarizes the qualification result for AOZ8001JI.

ablebond 8006ns

Abstract: CEL9220HF13 cel-9220HF AOZ8000HI marking A03 cel-9220 22A108-B CEL9220 22-A108-B A108-B
Contextual Info: AOS Semiconductor Product Reliability Report AOZ8000HI, rev 1 Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com Mar 26, 2007 1 This AOS product reliability report summarizes the qualification result for AOZ8000HI.

A194FH

Abstract: AOZ8000CI 84-3j mp8000ch4 A194-FH 2P3M a194 IEC-61000-4-2 SS MARKING sot23 MP-8000CH4
Contextual Info: AOS Semiconductor Product Reliability Report AOZ8000CI, rev 2 Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com Mar 27, 2007 1 This AOS product reliability report summarizes the qualification result for AOZ8000CI.

IRFH7911

Abstract: IRFH7911TRPBF W5337 AN1152 FET MARKING CODE FET MARKING QG marking JE FET PQFN footprint
Contextual Info: PD - 97427A IRFH7911PbF HEXFET Power MOSFET VDS Q1 30 Q2 30 V RDS on max 8.6 3.0 m: 8.3 34 nC 13 28 A (@VGS = 10V) Qg (typical) ID (@TA = 25°C) Dual PQFN 5X6 mm Applications • Control and synchronous MOSFET for buck converters Features and Benefits Benefits

Contextual Info: PD - 97427 IRFH7911PbF HEXFET Power MOSFET VDS Q1 30 Q2 30 V RDS on max 8.6 3.0 m: 8.3 34 nC 13 28 A (@VGS = 10V) Qg (typical) ID (@TA = 25°C) Dual PQFN 5X6 mm Applications • Control and synchronous MOSFET for buck converters Features and Benefits Benefits

IRFH7911TRPBF

Contextual Info: PD - 97427B IRFH7911PbF HEXFET Power MOSFET VDS Q1 30 Q2 30 V RDS on max 8.6 3.0 m: 8.3 34 nC 13 28 A (@VGS = 10V) Qg (typical) ID (@TA = 25°C) Dual PQFN 5X6 mm Applications • Control and synchronous MOSFET for buck converters Features and Benefits Benefits

IRFH7911TRPBF

Contextual Info: PD - 97427D IRFH7911PbF HEXFET Power MOSFET VDS Q1 30 Q2 30 V RDS on max 8.6 3.0 m (@VGS = 10V) Qg (typical) ID (@TA = 25°C) Ã : 8.3 34 nC 13 28 A      Ã      ' *   6' 1& *   6     Dual PQFN 5X6 mm Applications • Control and synchronous MOSFET for buck converters

AN1152

Contextual Info: PD - 97427C IRFH7911PbF HEXFET Power MOSFET VDS Q1 30 Q2 30 V RDS on max 8.6 3.0 m 8.3 34 nC 13 28 A (@VGS = 10V) Qg (typical) ID (@TA = 25°C) : Dual PQFN 5X6 mm Applications • Control and synchronous MOSFET for buck converters Features and Benefits

Contextual Info: PD - 97427D IRFH7911PbF HEXFET Power MOSFET VDS Q1 30 Q2 30 V RDS on max 8.6 3.0 m (@VGS = 10V) Qg (typical) ID (@TA = 25°C) Ã : 8.3 34 nC 13 28 A      Ã      ' *   6' * 1&   6     Dual PQFN 5X6 mm Applications • Control and synchronous MOSFET for buck converters

JEDEC htrb

Abstract: E670CB
Contextual Info: AOS Semiconductor Product Reliability Report AOZ8001KIL, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 1 www.aosmd.com This AOS product reliability report summarizes the qualification result for AOZ8001KIL.