TC51100 Search Results

K557

Abstract: TC511000Aj THM361020S-80 THM361020S thm361020
Contextual Info: W\ Ut -IKUWH'i1!'11-iJHii - - - : — THM361020S-80, 10 THM361020SG-80, 10 1,048,576 W O R D S X 36 BIT D Y N A M IC RAM M O DULE DESCRIPTION The THM36102CS is a 1,048,576 words by 36 bits dynamic RAM module which assembled 8 pcs of TC514400J and 4 pcs of TC511000AJ on the printed circuit board. The THM361020S can be as well

NZ70

Abstract: TC511001 TC511001AZ adata a55 diagram 4ao5
Contextual Info: TOSHIBA -CLOGIC/MEMORY} 14E D • i-DTVEMß DOlfiTOS S ■ T -46-23-15 TOSHIBA MOS MEMORY PRODUCTS TC511001AP/AJ/AZ-70, TG511001 AP/AJ/flZ-80 TC511001AP/AJ/AZ-10 DESCRIPTION The TC511001AP/AJ/AZ is the new generation dynamic RAM organized 1,048,576 words by

MO-23

Abstract: THM362040ASG-60 MO23 CDQ2 THM362040ASG
Contextual Info: TOSHIBA 'IHM36204QAS/ASG-60/70/80 2,097,152 WORD X 36 BIT DYNAMIC RAM MODULE DESCRIPTION The THM362040A is a 2,097,152 word by 36 bit dynamic RAM module which is assembled with 18 TC514400ASJ devices and 8 TC511000BFT devices on the printed circuit board. This module can be used as

BFT 50 TH

Contextual Info: PRELIMINARY 1,048,576 WORD x 1 BIT DYNAMIC RAM DESCRIPTION T he TC511002BP/BJ/BZ/BFT is th e new g en eratio n dynam ic RAM organized 1,048,576 words by 1 bit. T he TC511002BP/BJ/BZ/BFT utilizes TO SH IB A ’S CMOS Silicon gate process technology a s w ell as

TC511000AJ

Abstract: tc511000
Contextual Info: THM91010AS-70, 80, 10 ¡d e s c r i p t i o n The THM91010AS is 9 pcs of TC511000AJ on The THM91010AS is high density and large memory systems, and to a 1,048,576 words by 9 bits dynamic RAM module which assembled the printed circuit board. optimized for application to the systems which are required

toshiba mos memory products

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS 1 ,0 4 8 . 5 7 6 W O R D S X 4 BIT THM41OOOL-10,12 FAST PAGE M O D E D Y N A M IC R A M M O D U L E DESCRIPTION The T H M 4 1 0 0 0 L is a 1,048,576 words by 4 bits dynam ic RAM m odule which assembled 4 pcs of TC511000J on the printed c irc u it board.

THM91000AS10

Abstract: TC511000AJ THM91020AL
Contextual Info: 1,048,576 W ORDS x 9 BIT D Y N A M IC RAM PRELIMINARY M O DULE DESCRIPTION The THM 91000AS/ASG/AL is a 1,048,576 words by 9 bits dynamic RAM module which assem bled 9 of TC511000AJ on the printed circuit board. The THM 91000AS/ASG/AL is optimized for application to the system s which are required high density and large capacity such as m ain memory of

TMM-9

Abstract: HM9100 TC511000AJ THM91020AL-80
Contextual Info: THM91OOOAS/AL-70, 80, 10 THM91021AL-70, 80, 10 Id e s c r i p t i o n ! The THM91000AS/AL 9 pcs of TC511000AJ on The THM91000AS/AL high density and large memory systems, and to is a 1,048,576 words by 9 bits the printed circuit board. is optimized for application to

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TNM91010AS-70, 80, 10 [d e s c r i p t i o n ! The THM91010AS is 9 pcs of TC511000AJ on The THM91010AS is high density and large memory systems, and to a 1,048,576 words by 9 bits dynamic RAM module which assembled the printed circuit board.

tc511000aj

Contextual Info: TOSHIBA THM362020AS/ASG -60/70/S0 2,097,152 WORD X 36 BIT DYNAMIC RAM MODULE DESCRIPTION The THM362020A is a 2,097,152 word by 36 bit dynamic RAM module which is assembled with 16 TC514400ASJ devices and 8 TC511000BJ/AJ devices on the printed circuit board. This module can be used as

tc511000

Abstract: TH021 th-021a
Contextual Info: TOSHIBA MOS MEMORY PRODUCTS THM91000AS/AL-70, 80, 10 THM91021AL-70, 80, 10 IDESCRI PTI0Ñ1 The THM91000AS/AL 9 pcs of TC511000AJ on The THM91000AS/AL high density and large memory systems, and to is a 1,048,576 words by 9 bits dynamic RAM module which assembled

Contextual Info: IM R R n S lH H I! PRELIM INARY 1,048,576 W O R D S x 9 BIT D Y N A M IC R A M M O D U L E D ESC R IP TIO N The THM91070S/L is a 1,048,576 words by 9 bits dynamic RAM module which assembled 2 pcs of TC514400J and Ipc of TC511000AJ on the printed circuit board.

tc511000ap

Contextual Info: T EN T A T IV E D A T A 1,048,576 W O R D x 1 BIT D Y N A M I C R A M D ESC RIPTION The TC511000AP/AJ/AZ is the new generation dynamic RAM organized 1,046,576 words by 1 bit. TC511000AP/AJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced

tc511000

Contextual Info: TOSHIBA LOGIC/MEMORY MEE 2,097,152 WORDS X 36 BIT DYNAMIC RAM D • ^ 7 2 4 0 MODULE 0021533 2 I PRELIMINARY DESCRIPTION The THM36202QS is a 2,097,152 words by 36 bits dynam ic RAM module which assembled 16 pcs of TC514400J and 8 pcs of TC511000AJ on the printed circuit board. The TI1M362U20S can be as well

Contextual Info: PRELIMINARY D ESC R IPTIO N The TC511000BPI/BJL/BZL/BFTL is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511000BPL/BJL/BZL/BFTL utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating m argins, both internally and to the

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS THM 91022L-85, 10 , 12 [description ! The THM91022L is a 1,048,576 w o r d s b y 9 bits dynamic R A M m o d u l e w h i c h assembled 9 pcs of TC511002J on b o t h sides of the printed circuit board. The THM91022L is optimized for a p plication to the systems w h i c h are required

Contextual Info: 1,048,576 W O RD x PRELIMINARY 1 BIT DYN AM IC RAM D E SC R IP T IO N The TC511001BP/BJ/BZ/BFT is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511001BP/BJ/BZ/BFT utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

Contextual Info: TOSHIBA THM362040AS/ASG-60/70/80 2,097,152 WORD X 36 BIT DYNAMIC RAM MODULE DESCRIPTION The TH M 362040A is a 2,097,152 word by 36 bit dynam ic RA M m odule w hich is assem bled with 18 TC514400ASJ devices and 8 TC511000BFT devices on the printed circuit board. This m odule can be used as

tc511000aj

Abstract: ATR80 1048576x4 TC511664 tc511665 TC511664BJl TC511000AJ/AZ-70
Contextual Info: MOS Memory CMOS Dynamic RAM Capacity Max. Access Time ns Min. Cyde Power *AA Time (ns) Supply (V) *CAC Type No. ‘ RAC Max. Power Dtesipa!ion(mW) Active S ta n d by TC511000AJ/AZ-70 70 20 35 130 440 TC511000AJ/AZ-80 80 20 40 150 358 TC511000AJ/AZ-10 100

THM91070AS-60

Abstract: THM91070AS60 TC511000Aj THM91070AL-60 xxxxxx60
Contextual Info: 1,048,576 W O R D S X 9 BIT D YN A M IC RAM M ODULE DESCRIPTION The THM91070AS/AL and THM91070AS/AL are a 1,048,576 words by 9 bits dynamic RAM module which assembled 2 pcs of TC514400ASJ and 1 pcs of TC511000AJ/BJ on the printed circuit board. The These modules are optimized for application to the systems which are required high density and

THM91000AS70

Abstract: THM91000ASg THM91000AS tc511000
Contextual Info: 1 ,0 4 8 ,5 7 6 W O R D S x 9 BIT D Y N A M IC RAM PRELIMINARY M O DULE DESCRIPTION The THM91000AS/ASG/AL is a 1,048,576 words by 9 bits dynamic RAM module which assembled 9 pcs of TC511000AJ on the printed circuit board. The THM91000AS/ASG/AL is optimized for

TC511002A

Contextual Info: .1 TENTATIVE D AT A 1 ,048,576 W O R D x 1 BIT D Y N A M I C R A M DESCRIPTION The TC511002A P/A J/A Z is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511002A P/A J/A Z utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced

TC511000AJ

Contextual Info: if PRELIMINARY 1,048,576 W O R D S x 9 BIT D Y N A M IC R A M M O D U LE DESCRIPTION The THM 91070S/L is a 1,048,576 words by 9 bits dynamic RAM module which assem bled 2 pcs of TC514400J and lp c of TC511000AJ on the printed circuit board. The THM 91070S/L is optimized for application to the system s which are required high density and

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS THM 91002S/L-85, 10 , 12 description! The THM91002S/L is a 1,048,576 words by 9 bits dynamic RAM module which assembled 9 pcs of TC511002J on the printed circuit board. The THM91002S/L is optimized for application to the systems which are required