TC5316200P Search Results

Contextual Info: 16M BIT 1 M W O R D x 16 B1T/2M W O R D x 8BIT C M O S M A S K R O M DESCRIPTION The TC5316200P/F is a 16,777,216 bits read only memory organized as 1,048,576 words by 16 bits when BYTE is logical high, and is organized as 2,097,152 words by 8 bits, when BYTE is logical low.

Contextual Info: w îîisaï iijlili 16M BIT 1 M W O RD x 16 B1T/2M W O RD x 8BIT CM O S M ASK ROM DESCRIPTION The TC5316200P/F is a 16,777,216 bits read only memory organized as 1,048,576 words by 16 bits when BYTE is logical high, and is organized as 2,097,152 words by 8 bits, when BYTE is logical low.

TC5316200P

Contextual Info: TC5316200P/F 16M BIT 1M W O R D x 16 B IT /2 M W O R D x 8B IT CM O S M A SK ROM PRELIMINARY DESCRIPTION The TC5316200P/F is a 16,777,216 bits read only memory organized as ‘1,048,576 words by 16 bits when BYTE is logical high, and is organized as 2,097,152 words by 8 bits, when JBYTiS is logical low.

TC5716200D-150

Abstract: 5716200D
Contextual Info: TOSHIBA TC5716200D-150, -200 SILICON STACKED GATE CMOS 1,048,576 WORD x 16 BIT/2,097,152 WORD x 8 BIT CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY D escription T heT C 5716200D is a 16,777,216 bit CMOS ultraviolet light erasable and electrically programmable read only memory. It is

41C1000

Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Contextual Info: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258

AC907

Abstract: TC5716200D
Contextual Info: 16MEGA BIT 1,048,576 W O R D PRELIMINARY x 16BIT/2,097,152 W O R D x 8BIT C M O S U.V. ERASABLE A N D ELECTRICALLY P R O G R A M M A B LE READ ONLY M E M O R Y DESCRIPTION The TC5716200D is a 16,777,216 b it CMOS u ltra v io le t lig h t e ra s a b le an d e le c tric a lly

16MEGA

Abstract: TC5716200D
Contextual Info: T C 5 7 1 6 2 0 0 D —150, - 2 0 P !• PRELIMINARY■ 16MEGA BIT 1,048,576 W ORD x 16BIT/2,097,152 WORD x 8BIT r n i.i.im ii'in n CMOS U.V. ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY D E S C R IP T IO N T h e T C 5716200D is a 16,777,216 b it CMOS u l tr a v io le t lig h t e r a s a b le a n d e le c tr ic a lly

41C464

Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Contextual Info: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page

K93C46

Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257

TC55B8128

Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6

GI9332

Abstract: mb831000 MB834000 23C2001 23C1001 23c1000 UPD23C1001 23c4001 HN62304 mb832000
Contextual Info: PROM/ROM index and cross reference 1.9 Jan 16, 2000 -Fujitsu 256K 32k x 8 MB83256 28 pin 512k 64k x 8 MB83512 (28 pin) 1M 128k x 8 MB831000 (32 pin) 2M 256k x 8 MB832000 (32 pin) 4M 256k x 16 / 512k x 8