TC58BYG2S0HBAI4 Search Results
TC58BYG2S0HBAI4 Price and Stock
KIOXIA TC58BYG2S0HBAI4IC FLASH 4GBIT PARALLEL 63TFBGA |
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TC58BYG2S0HBAI4 | Tray | 1 |
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TC58BYG2S0HBAI4 |
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TC58BYG2S0HBAI4 | 12 Weeks | 1,050 |
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TC58BYG2S0HBAI4 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|---|
| TC58BYG2S0HBAI4 | KIOXIA | IC FLASH 4G PARALLEL 63TFBGA | Original | 1.75MB |
TC58BYG2S0HBAI4 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TC58BYG2S0HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58BYG2S0HBAI4 is a single 1.8V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 2048blocks. |
Original |
TC58BYG2S0HBAI4 TC58BYG2S0HBAI4 2048blocks. 4224-byte 4224-bytes 2013-07-05C |