TCER Search Results
TCER Price and Stock
Microchip Technology Inc MCP16501TC-E-RMBPMIC FOR SAMA5DX/SAM9X6 MPUS |
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MCP16501TC-E-RMB | Cut Tape | 3,935 | 1 |
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Absolute Process Instruments NIST-CERTNIST Certification, 5 test point |
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NIST-CERT | Bulk | 1 |
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Amphenol Communications Solutions UTCER0111003SRHSBRIDGE+, R/A, 4 SOLDER PEG, DU |
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UTCER0111003SR | Reel | 2,000 |
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KEMET Corporation C1206T106K8RAC PROB MAT CERT- Bulk (Alt: C1206T106K8RAC PROB MAT CERT) |
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C1206T106K8RAC PROB MAT CERT | Bulk | 111 Weeks | 1 |
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Kyocera AVX Components PROHIBITIVEMATCERTTTP SPACE - Bulk (Alt: PROHIBITIVEMATCERT) |
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PROHIBITIVEMATCERT | Bulk | 38 Weeks | 1 |
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TCER Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Trap
Abstract: line Trap
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XT01MT XT02MT XT03MT Trap line Trap | |
EXHAUST FAN
Abstract: 2000M
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500VAC 30//F 2000M 250/300V 350/400V 450/500V EXHAUST FAN | |
Contextual Info: AMERICAN TECHNICAL CERAMICS QUICK REFERENCE PRODUCT SELECTION GUIDE ISO 9001 REGISTERED COMPANY W W W . A TCER A M ICS . CO M Corporate Profile ATC designs, develops, manufactures and markets Multilayer Capacitors, Single Layer Capacitors, Resistive Products, Inductors and Custom Thin Film Products |
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Contextual Info: o U N IT R O D E _ bq2201 SRAM Nonvolatile Controller Unit Features General Description >• Power monitoring and switching for 3-volt battery-backup applica tions The CMOS bq2201 SRAM Nonvolatile Controller Unit provides all necessary functions for converting a standard |
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bq2201 bq2201 TD220103 16-pin | |
alarm clock IC
Abstract: bq4842y
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bq4842Y 128Kx8 10-year 576-bit-up alarm clock IC | |
Contextual Info: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility |
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bq4011/bq4011Y 32Kx8 28-pin 10-year bq4011 144-bit | |
UNITRODEContextual Info: bq4014/bq4014Y 256Kx8 Nonvolatile SRAM Features ➤ Data retention in the absence of power ➤ Automatic write-protection during power-up/power-down cycles ➤ Industry-standard 32-pin 256K x 8 pinout ➤ Conventional SRAM operation; unlimited write cycles |
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bq4014/bq4014Y 32-pin 10-year 256Kx8 bq4014 152-bit UNITRODE | |
TSB41LV03Contextual Info: TSB12LV01A / TSB12LV01AI Data Manual IEEE 1394-1995 High-Speed Serial-Bus Link-Layer Controller Sourced from: SLLS332A February 2000 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue |
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TSB12LV01A TSB12LV01AI SLLS332A TSB41LV03 | |
Contextual Info: TSB12LV31 Data Manual IEEE 1394-1995 General-Purpose Link-Layer Controller For Computer Peripherals and Consumer Audio/Video Electronics SLLS255A SEPTEMBER 1998 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue |
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TSB12LV31 SLLS255A SLLA022 SLLA067 SLLA026 IEEE1394-1995 SLLA011 SLLA075 SLLA020A TSB12LV4x | |
Contextual Info: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility |
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bq4011/bq4011Y 32Kx8 28-pin 10-year bq4011 144-bit | |
Contextual Info: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility |
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bq4010/bq4010Y 28-pin 10-year bq4010 536-bit | |
SLLA081
Abstract: paccom ev app abstract
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TSB12LV01BEP SGLS123 SLLA081 paccom ev app abstract | |
Contextual Info: bq2204A X4 SRAM Nonvolatile Controller Unit General Description Features ä Power monitoring and switching for 3-volt battery-backup applications ä Write-protect control ä 2-input decoder for control of up to 4 banks of SRAM ä 3-volt primary cell inputs |
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bq2204A | |
Contextual Info: bq4010/bq401 OY UNITRODE- 8Kx8 Nonvolatile SRAM Features General Description > D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy |
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bq4010/bq401 bq4010 536-bit bq4010YMA-70N bq4010-70 bq4010/bq4010Y bq401Q 150ns 200ns | |
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18n5o
Abstract: BA2N15 SGX530 PowerVR SGX530 0x4803 Ps3 MOTHERBOARD CIRCUIT diagram DDR2-800 AM38x 15F4 17 inch lcd monitor
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AM3894 AM3892 SPRS681A AM389x AM3894, VFPv3-IEEE754 32K-Byte 256K-Byte 64K-Byte 18n5o BA2N15 SGX530 PowerVR SGX530 0x4803 Ps3 MOTHERBOARD CIRCUIT diagram DDR2-800 AM38x 15F4 17 inch lcd monitor | |
EL 817 C108
Abstract: HDMI I2C
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AM3874, AM3872, AM3871 SPRS695A AM387x 16/24/30-bit 16/24-bit EL 817 C108 HDMI I2C | |
bq4010
Abstract: bq4010LY bq4010MA-150 bq4010MA-200 bq4010MA-70 bq4010MA-85 bq4010Y
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bq4010/Y/LY SLUS116A 28-Pin 536-bit bq4010 bq4010LY bq4010MA-150 bq4010MA-200 bq4010MA-70 bq4010MA-85 bq4010Y | |
DM8148 GMII
Abstract: SPRS647 TMS320DM8146 OPP166 TMS320DM814x GP321 lpddr4 implementing pcb layout on tms320dm814x amplifier HS 9004
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TMS320DM8148, TMS320DM8147, TMS320DM8146 SPRS647C TMS320DM814x 32K-Byte DM8148 GMII SPRS647 TMS320DM8146 OPP166 GP321 lpddr4 implementing pcb layout on tms320dm814x amplifier HS 9004 | |
HDSP-253X
Abstract: HP 2531 HDSP-2531 5 x 7 dot matrix display HP 2530 HDSP-2530 HDSP-2532 HDSP-2533 HDSP-2534
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HDSP-253X HP 2531 HDSP-2531 5 x 7 dot matrix display HP 2530 HDSP-2530 HDSP-2532 HDSP-2533 HDSP-2534 | |
SKCB
Abstract: skcb 2m2-45-3-12 3m3-45-2-12 SKiiP 83 AC 12 i t 1 41046220 SKIIP "2 FOLD" SKIIP85 SKIIP DRIVER SKIIP GD semikron skiip 20
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th5000 2m2-45-2-12 2m2-45-3-12 2m2-45-4-12 3m3-45-2-12 3m3-45-3-12 3m3-45-4-12 4m7-40-2-12 4m7-40-3-12 4m7-40-4-12 SKCB skcb 2m2-45-3-12 3m3-45-2-12 SKiiP 83 AC 12 i t 1 41046220 SKIIP "2 FOLD" SKIIP85 SKIIP DRIVER SKIIP GD semikron skiip 20 | |
HD64F2238BFA13
Abstract: ac SYNCHRONOUS MOTOR WIRING HD64F2238BF13 HD64F2238BTF13 HD64F2238RBR13 H722 cr 6848 HD6432227 HD64F2238BTE HD64F2239
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H8S/2239, H8S/2238, H8S/2237, H8S/2227 16-Bit Family/H8S/2200 HD64F2238BFA13 ac SYNCHRONOUS MOTOR WIRING HD64F2238BF13 HD64F2238BTF13 HD64F2238RBR13 H722 cr 6848 HD6432227 HD64F2238BTE HD64F2239 | |
LA6548
Abstract: LC78648E
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ENN7694 LC78648E LC78648E LA6548 | |
Contextual Info: bq4852Y RTC Module With 512Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail control circuit, and battery The bq4852Y RTC Module is a nonvolatile 4,194,304-bit SRAM organized as 524,288 words by 8 bits with |
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bq4852Y 512Kx8 304-bit 10-year | |
Contextual Info: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility |
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bq4010/bq4010Y bq4010 536-bit 28-pin 10-year |