TCNL Search Results

AVX tcn

Abstract: 150 volt capacitors 200 uf
Contextual Info: TCN Series Tantalum Solid Electrolytic Chip Capacitors Undertab Series with Conductive Polymer Electrode • Conductive polymer electrode reduces failure mode ignition • Lower ESR • Undertab terminations layout: - High Volumetric Efficiency - High PCB assembly density

tcnl 100

Abstract: EP1210 CPT210 cpt21
Contextual Info: EP1210 r î n A CD D V CPT210 A FEATURES GENERAL DESCRIPTION High Density over 1200 gates) replacem ent for T T L and 74HC. Advanced C H M O S E P R O M technology allow s for erasability and reprogram mability. Low power: 15 mW typical standby power dissipation.

Contextual Info: TCN Series Tantalum Solid Electrolytic Chip Capacitors Undertab Series with Conductive Polymer Electrode • Conductive polymer electrode reduces ignition failure mode • Lower ESR • Undertab terminations layout: - High Volumetric Efficiency - High PCB assembly density

Contextual Info: TCN Series Tantalum Solid Electrolytic Chip Capacitors Undertab Series with Conductive Polymer Electrode High PCB assembly density, high capacitance in smaller dimensions and lower ESR can be achieved by ‘undertab’ terminations layout. TCN undertab series is offering highest volumetric efficiency tantalum capacitors in standard and low

TCNL 100

Abstract: TL541 d78c17 d78c14 capacitor 107 16k 020
Contextual Info: D A TA SHEET NEC MOS INTEGRATED CIRCUIT H P D 7 8 C 1 7 A , 7 8 C 1 8 (A ) 8-BIT SINGLE-CHIP M IC R O C O M P l,'r,=D ,1A#,TU A /n rn M x /c n T c n i The ^PD78C18(A) is an 8 -b it CMOS m icro com pu te r w hich integrates 16-bit ALU, ROM, RAM, an A/D converter,

D7032

Abstract: NEC D70325
Contextual Info: SEC NEC Electronics Inc. pPD70325 V25 Plus 16-Bit Microcomputer: High-Speed DMA, Single-Chip, CMOS Description □ Internal 256-byte RAM memory The juPD70325 (V25 Plus) is a high-performance, 16-bit, single-chip microcomputer with an 8-bit external data

sy 351

Abstract: ic 351 diode 351 teledyne hi-nil 1N4148 Teledyne Semiconductor diode SY 351 SY 351/6
Contextual Info: TSC350/351 5 8 0 PleasantStreet '.Votertown, M A 0217 2 617 9>:4-9?60 / /m M llIt ip lG X C f S O .R i* W O D ll c • Dual 4-Bit •eatures G e n e ra l D escription • V E R S A T IL E D E S IG N C O N FIG U R A T IO N Teledyne Semiconductor 350 8-Bii, end 351 Duel 4-Bit Multi­

asynchronous dram controller

Abstract: 683XX M68000 MC68681 MCF5307 lfl 1.635 70953 IO162
Contextual Info: Introduction Signal Description ColdFire Core B • 9 PLL Cache SRAM Bus Operation System Integration Module Chip-Select Module Parallel Port General-Purpose I/O DRAM Controller Timer Module DMA Module UART Module M-Bus Module Debug Support IEEE 1149.1 JTAG

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

Contextual Info: 19*1025; Rev 1,8/92 CMOS, 10-Bit, M onolithic M ultiplying D/A C onverter 1.1 This specification covers the detail requirements for a 10-bit, monolithic, CMOS multiplying digital-to-analog converter. This circuit is processed in accordance with MIL-STD-883 and is

2SJ174

Abstract: Hitachi 2SJ
Contextual Info: HITACHI 2SJ174 S IL IC O N P C H A N N EL M O S FET HIGH S P E E D P O W E R S W IT C H IN G • FEA TU RES t. jitc • Low Qn-Resistarice 2. Drain (Kltngei • High Speed Switching • Low Drive Current 3. Source Í Dimensions in i V Gate Drive Device — Can be driven from 5 V source

Contextual Info: TCN Series Tantalum Solid Electrolytic Chip Capacitors Undertab Series with Conductive Polymer Electrode FEATURES • Conductive polymer electrode reduces ignition failure mode • Lower ESR • Undertab terminations layout: - High Volumetric Efficiency - High PCB assembly density

Contextual Info: TCN Series Tantalum Solid Electrolytic Chip Capacitors Undertab Series with Conductive Polymer Electrode • Conductive polymer electrode reduces ignition failure mode • Lower ESR • Undertab terminations layout: - High Volumetric Efficiency - High PCB assembly density

Contextual Info: TCN Series Tantalum Solid Electrolytic Chip Capacitors Undertab Series with Conductive Polymer Electrode • Conductive polymer electrode reduces failure mode ignition • Lower ESR • Undertab terminations layout: - High Volumetric Efficiency - High PCB assembly density

Contextual Info: TCN Series Tantalum Solid Electrolytic Chip Capacitors Undertab Series with Conductive Polymer Electrode • Conductive polymer electrode reduces ignition failure mode • Lower ESR • Undertab terminations layout: - High Volumetric Efficiency - High PCB assembly density

wv5 marking

Abstract: aes 1136 djsa MM68000 mbus 38448 74274 9439 2n EN 61373 Category 1 Class B gigabyte m61 s3
Contextual Info: SECTION 1 INTRODUCTION The MCF5307 integrated microprocessor combines a ColdFire processor core with a Multiply-Accumulate MAC unit, DRAM controller, DMA controller, timers, parallel and serial interfaces, and system integration. Designed for embedded control applications, the

Contextual Info: TCN Series Tantalum Solid Electrolytic Chip Capacitors Undertab Series with Conductive Polymer Electrode • Conductive polymer electrode reduces ignition failure mode • Lower ESR • Undertab terminations layout: - High Volumetric Efficiency - High PCB assembly density

WM Marking code

Abstract: marking WM nee jo MARKING 25J AR25 CEEB AR25B
Contextual Info: s AR25 SERIES TAIWAN SEMICONDUCTOR 25.0 AMPS. High Current Button Rectifiers AR RoHS C O M P L IA N C E Features P la s t ic n i a 1er is I u s e d c a r r ie s U n d e rw rite rs L s b a rs to ry C la s s ific a tio n 94V -Û L o w c o s t c o n s tru c tio n u tiliz in g v o id -fre e m o ld e d

Contextual Info: TCN Series Tantalum Solid Electrolytic Chip Capacitors Undertab Series with Conductive Polymer Electrode • Conductive polymer electrode reduces ignition failure mode • Lower ESR • Undertab terminations layout: - High Volumetric Efficiency - High PCB assembly density

Contextual Info: TCN Series Tantalum Solid Electrolytic Chip Capacitors Undertab Series with Conductive Polymer Electrode • Conductive polymer electrode reduces ignition failure mode • Lower ESR • Undertab terminations layout: - High Volumetric Efficiency - High PCB assembly density

Contextual Info: TCN Series Tantalum Solid Electrolytic Chip Capacitors Undertab Series with Conductive Polymer Electrode • Conductive polymer electrode reduces failure mode ignition • Lower ESR • Undertab terminations layout: - High Volumetric Efficiency - High PCB assembly density

TCNL157M006

Abstract: TCNT157M006
Contextual Info: TCN Series Tantalum Solid Electrolytic Chip Capacitors Undertab Series with Conductive Polymer Electrode • Conductive polymer electrode reduces ignition failure mode • Lower ESR • Undertab terminations layout: - High Volumetric Efficiency - High PCB assembly density

bus arbitration

Abstract: parallel bus arbitration tlku 001-120 round robin bus arbitration TIBC C1995 DS3875 DS3883A DS3884
Contextual Info: DS3875 Futurebus a Arbitration Controller General Description The DS3875 Futurebus a Arbitration Controller is a member of National Semiconductor’s Futurebus a chip set designed specifically for the IEEE 896 1 Futurebus a standard The DS3875 implements Distributed Arbitration and Distributed

TR152

Contextual Info: FR151 THRU FORWARD INTERNATIONAL ELECTRONICS L ID . SEMICONDUCTOR TECHNICAL DATA FR157 TECHNICAL SPECIFICATIONS OF FAST RECOVERY RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 1.5 Amperes FEATURES * Fast switching * Low leakage T Low forward voltage drop