TCPT 1200 Search Results

Opto-Sensor

Abstract: TEMIC tcpt 1200 tcpt 1200 TCPT1200 mounting detector wheel mouse sensor Optical Mouse sensor TCPT1200 Transmissive Optical Sensors height sensor D-74025
Contextual Info: July 97 TEMIC TELEFUNKEN Semiconductors Discrete Components Division Theresienstraße 2 POB 3535 D-74025 Heilbronn New Product Info Subminiature Transmissive Optical Sensors TCPT 1200 one channel TCUT 1200 ( two channels) The Application Accurate position sensor for encoder application and detection of motor direction.

hy5118160b

Abstract: WU33 HY5118160 D08-15 tcpt 200 HD-007 HY5118160BTC
Contextual Info: •HYUNDAI H Y 5 1 1 8 1 6 0 B S e r ie s 1M x 16-bit CMOS DRAM with 2CAS DESCRIPTION The H Y5118160B is the new generation and fast dynam ic RAM organized 1,048,576x 16-bit. The HY5118160B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: -HYUNDAI H Y 5 1 1 8 1 6 0 S e r ie s 1M x 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5118160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118160 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: HYUNDAI HY514264B Seies 256K X 16-bit CMOS DRAM with Extended Data Out PRELIMINARY DESCRIPTION The HY514264B is the new generation and fast dynamic RAM organized 262,144x 16-bit configuration employing advance submicron CMOS process technology and advanced circuit design techniques to achieve fast access

Contextual Info: HY51V4260B Series HYUNDAI 256Kx 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY51V4260B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advance submicron CMOS process technology and advanced circuit design techniques to achieve

Contextual Info: HY «H Y U N D A I 5116160 Series 1M X 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5116160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116160 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

phc51

Abstract: A0317
Contextual Info: HYUNDAI H Y 5 1 V 1 6 1 6 0 B S e r ie s 1 M x 16-bit CMOS DRAM with 2ÜÄ5 DESCRIPTION T he H Y51V 16160B is th e new generation and fa st dynam ic RAM organized 1,048,576 x 16-bit. The HY51V16160B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques

BT 2313 M

Abstract: Bt 2313 HY514264B HY514264 BSH15 hy514264bjc50 icshtibi BVOE 18 DCS15 npjt
Contextual Info: HY514264B Seies HYUNDAI 256K X 16-bit CMOS DRAM with Extended Data Out PRELIMINARY DESCRIPTION The HY514264B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advance submicron CMOS process technology and advanced circuit design techniques to achieve fast access

Contextual Info: HY514100B Series “H Y U N D A I 4M X 1- b it CMOS DRAM DESCRIPTION The HY514100B is the new generation and fast dynam ic RAM organized 4,194,304 x 1-bit. The HY514100B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: • H Y U N D A I HY51V4400B Series 1M X 4-bit CMOS DRAM DESCRIPTION The HY51V4400B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit.The HY51V4400B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

4680M

Abstract: AAU2 AAU27
Contextual Info: HY51V4260B Seríes “H Y U N D A I 256K X 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY51V4260B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advance submicron CMOS process technology and advanced circuit design techniques to achieve

rau2

Abstract: 1A011
Contextual Info: HY5116160 Series -HYUNDAI 1M X 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5116160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116160 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

PST34

Contextual Info: H YU N D AI H Y 5 1 1 6 1 6 4 B S e r ie s 1M X 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5116164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116164B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: DRAM MODULE KMM53216000AKG KMM53216000AKG Fast Page Mode 16Mx32 DRAM SIMM, 4K Refresh using 64M DRAM with 400mil G EN ER AL DESCRIPTIO N FEATURES The Samsung KMM53216000AKG is a 16M bit x 32 • Part Identification Dynamic RAM high density memory module. The

MB642BT18TADG60

Abstract: MB641BT18TADG60 MB641BT18TADG70 MB642BT18TADG70 MB644CT10TADG60 MB644CT10TADG70 EEE Std 404
Contextual Info: Order this document by 3VEDOU64D/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1, 2, 4M x 64 DRAM Dual-In-Line Memory Module DIMM 8, 16, and 32 Megabyte • JEDEC–Standard 168–Lead Dual–In–Line Memory Module (DIMM) 3.3 V, EDO, Unbuffered 1M x 64 (8MB), 2M x 64 (16MB)

UMT3F

Abstract: vmn3 package EMT3F TSST8 rohm suffix "s" rohm Part No. Explanation rohm suffix "N" T100 T106 T110
Contextual Info: Part No. Explanation MOSFET Part No. Explanation Tape code <Single-Chip Type> R T Q 0 Example: ROHM 3 5 P 2 T R Polarity ID Unit: 100mA 035= 3500mA(3.5A) N Nch P Pch Drive Voltage Drive Voltage (V) Type of MOSFET 1.2/1.5/1.8 2.5 4 − − C Low IGSS Type

Ck37

Contextual Info: • « H Y U N D A I H Y 5 1 4 4 0 0 A S e r ie s 1 Mx 4-bit CMOS DRAM DESCRIPTION The HY514400A is the 2nd generation and fast dynam ic RAM organized 1,048,576 x 4-bit. The HY514400A utilizes Hyundai's CM OS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: HY514400B Series - H Y U N D A I 1Mx4-bit CMOS DRAM DESCRIPTION The HY514400B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514400B utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide

RA5B

Contextual Info: DRAM MODULE KMM332V803AS-L KMM332V803AS-L Fast Page Mode 8M x32 Based on 8Mx8, 4K Refresh, 3.3V, Low power/Self-Refresh G ENER AL DESCRIPTION FEATURES The Samsung KMM332V803A is a 8M bit x 32 Dynamic RAM high density memory module. The Samsung KMM332V803A consists of four CMOS

HY5117400B

Abstract: HY5117400 HYM536810CMG HY514100A HYM536810C HYM536810CM
Contextual Info: HYM536810C M-Series 8Mx36 bit FP DRAM MODULE based on 4Mx4 DRAM, with Parity, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536810C M-Series is a 8Mx36-bit Fast Page mode CMOS DRAM module consisting of sixteen HY5117400B in 24/26 pin SOJ and eight HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed

DS12

Contextual Info: O K I Semiconductor MSC23436 A-xxBS 12 /DS 12 4,194,304-Word x 36-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23436A-xxBS12/DS12 is a fully decoded 4,194,304-word x 36-bit CMOS Dynamic Random Access M emory M odule com posed of eight 16-Mb DRAMs 4M x 4 in SOJ packages

Tra 1120 r

Abstract: DU33
Contextual Info: O K I Semiconductor M SC 23436A -xxB S 12 /P S 1 2 4,194,304-Word x 36-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23436A-xxBS12/DS12 is a fully decoded 4,194,304-word x 36-bitCMOS Dynamic Random Access Memory Module composed of eight 16-Mb DRAMs 4M x 4 in SO] packages

ca5J

Contextual Info: DRAM MODULE KMM332V803AS-L KMM332V803AS-L Fast Page Mode 8Mx32 Based on 8Mx8, 4K Refresh, 3.3V, Low power/Self-Refresh G ENERAL DESCRIPTION FEATURES The Sam sung KM M 332V803A is a 8M bit x 32 Dynamic RAM high density memory module. The • Part Identification

HY5117400B

Abstract: HY514100A HYM536810D HYM536810DM HYM536810DMG
Contextual Info: HYM536810D M-Series 8Mx36 bit FP DRAM MODULE based on 4Mx4 DRAM, with Parity, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536810D M-Series is a 8Mx36-bit Fast Page mode CMOS DRAM module consisting of sixteen HY5117400B in 24/26 pin SOJ and eight HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed