TCS 3200 Search Results

40531

Contextual Info: DWG NO. SH REV R C - 4 9 5 - 5 1 0 0 -5 0 0 DESCRIPTION 25390 NEW RELEASE TO PRODUCTION 8/11/9B ADDED DATUMS AND POS TOL 03/08/99 30404 COMPLETE RECONFIGURE: SEE SCR 3/24/00 32005 ADDED NOTE 7, SEE SCR 9/18/00 33150 ADDED NOTE 8 1 2/01 40531 ADDED TABLE 5

Contextual Info: DWG NO. SH C -4 9 5 -5 1 0 0 -5 0 0 REV ZO N E C.MURPHY 26874 ADDED DATUMS AND POS TOL R.C 0 3 /0 8 /9 9 K.LEBLANC 30404 COMPLETE RECONFIGURE: SEE SCR LL 3 /2 4 / 0 0 K.LEBLANC 32005 ADDED NOTE 7, SEE SCR SG 9 /1 8 / 0 0 K.LEBLANC 33150 ADDED NOTE 8 SG 1/2 /0 1

tms320tci6488 evm

Abstract: TMS320TCI6488 ddr2 ram
Contextual Info: Application Report SPRAB57—June 2009 TMS320TCI6488 Memory Access Performance Communication Infrastructure Brighton Feng Abstract The TMS320TCI6488 has three C64x+ cores, each of which has 32KB L1D SRAM, 32KB L1P SRAM, 3MB L2 SRAM and can be configured as 1MB/1 MB/1 MB or 1.5

Contextual Info: DWG NO. REV SH C— 496— 5000— 500 ZONE BY 25398 26874 NEW RELEASE TO PRODUCTION 28303 ORACLE MATCH 08/03/99 30404 COMPLETE RECONFIGURE; SEE SCR ADDED NOTE 7. SE E SCR 33149 ADDED NOTE 7, SE E SCR 1/2/01 41476 ADDED VHDM L -SE R IE S 3/26/03 CORRECTED DET V SHT. 3

IH-035

Abstract: marking 702x
Contextual Info: DWG NO. SH R EV U NEW RELEASE TO PRODUCTION JG C— 496— 5 000— 500 SCR NO. 25398 26874 ADDED DATUMS AND POS TOL 28303 ORACLE MATCH 30404 COMPLETE RECONFIGURE; SEE SCR ADDED NOTE 7. SEE SCR 1/2/01 ADDED VHDM L-SE R IES 3/26/03 CORRECTED DET V SHT. 3 MODIFIED TITLE BLOCK

NX-XX

Contextual Info: DWG NO. C-498-5100-500 REV SH T DATE 25397 26874 NEW RELEASE TO PRODUCTION 30404 COMPLETE RECONFIGURE; SEE SCR ADDED NOTE 7, SEE SCR 1 02/01 34312 ADDED -1 0 X ROUND PIN 3/22/01 / MODIFIED TABLE 3 12/19/02 ADDED V 01/14/03 SERIES JSG D. MANTERI 04/25/03 REVISE DATUMS, ADD PART REV

Contextual Info: □pìriE 32 Megabit CMOS Flash EEPROM Dense-Pac Microsystems, Inc DPZ2MS16P/DPZ2MS16XP DESCRIPTION: The DPZ2M S16P/XP is a 32 megabit CM OS FLASH Electrically Erasable and Programmable nonvolatile memory module. The module is built with sixteen 256K x 8 FLASH memory devices

Contextual Info: Ordering number : EN Sí5341 CMOS LSI No. LC322260J, T-70/80 5341 SA%YO 2 MEG 131072 words x 16 bits DRAM Fast Page Mode, Byte Read/Write Preliminary Overview Package Dimensions The LC322260J, T are CMOS dynamic RAMs operating on a single 5 V power source and having a 131072 words x

Contextual Info: Bulletin 12070/B bitemational S Rectifier SD600N/R SERIES STANDARD RECOVERY DIODES Stud Version Features W ide current range High voltage ratings up to 3200V High surge current ca p a bilitie s Stud cathode and stud anode version S tandard JEDEC types Typical Applications

"1t-sram"

Abstract: TSMC 0.18um CL018G M1T2HT18FL64E MoSys
Contextual Info: High Speed Flow-through 2-Mbit 32Kx64 Standard 1T-SRAM Embedded Memory Macro M1T2HT18FL64E • High Speed 1T-SRAM Standard Macro • 100 MHz operation • 1-Clock cycle time • Flow-through read access timing • Late write mode timing • 64-Bit wide data buses

3.3kOhm

Contextual Info: Renesas LSIs M5M29KB/T641AVP 67,108,864-BIT 8,388,608-WORD BY 8-BIT /4,194,304-WORD BY 16-BIT CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The M5M29KB/T641AVP are 3.3V-only high speed 67,108,864-bit CMOS boot block FLASH Memories with alternating BGO(Back Ground Operation) feature. The BGO

M5M29KE131BTP

Abstract: 52-pin TSOP
Contextual Info: Renesas LSIs Preliminary M5M29KE131BTP Notice: This is not a final specification. Some parametric limits are subject to change. 134,217,728-BIT 16,777,216-WORD BY 8-BIT / 8,388,608-WORD BY 16-BIT CMOS FLASH MEMORY Stacked-uMCP (micro Multi Chip Package)

74h 132

Abstract: WA.N4
Contextual Info: Renesas LSIs Preliminary M5M29KB/T641ATP Notice: This is not a final specification. Some parametric limits are subject to change. 67,108,864-BIT 8,388,608-WORD BY 8-BIT /4,194,304-WORD BY 16-BIT CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION M5M29KB/T641ATP provides for Software Lock Release function.

M5M29KE131BVP

Contextual Info: Renesas LSIs Preliminary M5M29KE131BVP Notice: This is not a final specification. Some parametric limits are subject to change. 134,217,728-BIT 16,777,216-WORD BY 8-BIT / 8,388,608-WORD BY 16-BIT CMOS FLASH MEMORY Stacked-uMCP (micro Multi Chip Package)

WD04

Abstract: 24Blocks
Contextual Info: Renesas LSIs M5M29KB/T331AVP 33,554,432-BIT 4,194,304-WORD BY 8-BIT /2,097,152-WORD BY 16-BIT CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The M5M29KB/T331AVP are 3.3V-only high speed 33,554,432-bit CMOS boot block FLASH Memories with alternating BGO(Back Ground Operation) feature. The BGO

Contextual Info: Renesas LSIs M5M29KB/T331AVP 33,554,432-BIT 4,194,304-WORD BY 8-BIT /2,097,152-WORD BY 16-BIT CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The M5M29KB/T331AVP are 3.3V-only high speed 33,554,432-bit CMOS boot block FLASH Memories with alternating BGO(Back Ground Operation) feature. The BGO

Contextual Info: ADVANCED INFORMATION MX29LW320T/B 32M-BIT [4M x 8 / 2M x 16] ONLY CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • • • • • • Supply voltage range: 2.7V to 3.6V 2M word x 16 Bit /4M Byte x 8 Bit switchable Fast access time: 70/80/90ns 20mA maximum active current

mx29lw321

Contextual Info: ADVANCED INFORMATION MX29LW321T/B 32M-BIT [4M x 8 / 2M x 16] ONLY CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • • • • • • Supply voltage range: 2.7V to 3.6V 2M word x 16 Bit /4M Byte x 8 Bit switchable Fast access time: 70/80/90ns 20mA maximum active current

52-pin TSOP

Contextual Info: Renesas LSIs Preliminary M5M29KB/T331ATP Notice: This is not a final specification. Some parametric limits are subject to change. 33,554,432-BIT 4,194,304-WORD BY 8-BIT /2,097,152-WORD BY 16-BIT CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION M5M29KB/T331ATP provides for Software Lock Release function.

sa102 equivalent

Abstract: transistor marking A21 4kw marking MB84VD23381HJ-70 MBVD23381HJ-70
Contextual Info: TM SPANSION MCP Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

Contextual Info: TM SPANSION MCP Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

transistor sr61

Abstract: BA107 transistor BA29 BA27 chip transistor BA106 BA99 SAMSUNG MCP A21-A7 transistor ba31 ba30 transistor
Contextual Info: K5T6432YT B M MCP MEMORY Document Title Multi-Chip Package MEMORY 64M Bit (4Mx16) Four Bank NOR Flash Memory / 32M Bit (2Mx16) UtRAM Revision History Revision No. History 1.0 Draft Date Final Specification Remark November 27, 2001 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

BA100 diode

Abstract: BA133 diode diode ba102 SAMSUNG MCP BA102 diode BA102 bufer BA114 BA122 BA125
Contextual Info: K5C6417YT B M MCP MEMORY Document Title Multi-Chip Package MEMORY 64M Bit (4Mx16) Four Bank NOR Flash Memory / 16M Bit (1Mx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark Advance 0.0 Initial Draft August 29, 2001 1.0 Revised - Changed F-Vcc Max. Value (from 3.0V to 3.3V)

BA100 diode

Abstract: BA102 ba107 Samsung MCP BA125 Diode diode ba102 BA134 BA100 BA106
Contextual Info: Advance Information MCP MEMORY K5C6481NT B M Document Title Multi-Chip Package MEMORY 64M Bit (4Mx16) Dual Bank NOR Flash Memory / 8M(512Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Advance Information Draft Date Remark Sep. 7, 2001 Advance