TCW 060 Search Results

Contextual Info: LiC ¥ S l / LEDTRONICS, INC. THE FUTURE OF LIGHT* Luminaire Photometric Report Filename: STP301S-1X6-TCW-012V Manufacturer: LEDTRONICS Luminaire: NO LENS,12VDC,1.4W Luminaire Cat: STP301S-1X6-TCW-012V Lamp:. LUMEN RATING: 100.8Lms. Lamp Output: 1 lamp s), rated lamp lumens: 100.8

Contextual Info: LEDTRONICS, INC. THE FUTURE OF L IG H T Lum inaire Photometric Report Filename: STP301S-1X3-TCW-012V Manufacturer: LEDTRONICS Luminaire: NO LENS,12VDC,.67W Luminaire Cat: STP301S-1X3-TCW-012V Lamp:. LUMEN RATING: 45.7Lms. Lamp Output: 1 lamp s , rated lamp lumens: 45.7

Contextual Info: 23105 Kashiwa Court Torrance. CA 90505 Phone: 800 579-4875/(310) 534.1505 Fax: (310) 534 1424 E-mail: webmaster@ledtromcs com Website: wwwledtronics.com LEDTRONICS, INC*. THE FUTURE OF LIGH T Lum inaire Photometric Report Filename: STP301S-1X3-TCW-012V

TCW 060

Contextual Info: 23105 Kashiwa Court Torrance. CA 90505 Phone: 800 579-4875 / (310) 534.1505 Fax: (310) 534.1424 E-mail: webmaster@ledtromcs.com Website: vw w ledtronics com I LC V *\ LEDTRO N ICS, INC: V l / THE FUTURE OF LIGHT1 » Luminaire Photometric Report Filename: STP301S-1X6-TCW-012V

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Abstract: constant time delay wcrh wcrh t11 wcrh T1 Pseudo SRAM HN27C101AG-10 Hitachi DSA00198 HM678127UHJ BCRH
Contextual Info: Hitachi Microcomputer H8S/2655 Interface Volume Application Note ADE-502-060 Rev. 1.0 9/5/98 Hitachi, Ltd. Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in

88130CS20TB

Abstract: 7E1L 88130CS25CB
Contextual Info: EDI88130CS m X 12SKx8 Monolithic Sialic Ram ELECTRONIC. DESIGNS, INC. Features 128Kx8 M onolitfic CMOS Static RAM, Highspeed 128Kx8 bits Monolithic CMOS Static Random Access Memory The EDI88130CS is a high speect high performance • Fast Access Times: monolithic Static RAM organized as 128Kx8 bits.

511-10J

Abstract: 511-11J LT10K LT4K
Contextual Info: Series 511 Molded Unshielded RF Coils SERIES 511 PHENOLIC CORE LT4K .16 50 25.0 525 .040 .18 50 25.0 500 .043 .20 50 25.0 475 .047 .24 45 25.0 415 .060 .27 45 25.0 400 .070 .30 45 25.0 380 .080 .36 45 25.0 345 .098 .39 45 25.0 330 .100 .43 45 25.0 315 .110

Contextual Info: =>_ OX Z A I sl .007 .008 .011 .011 .013 .017 .019 .022 .023 .026 .027 .032 .033 .035 .037 .047 .060 .090 .113 .129 .150 .162 .208 .212 .281 .380 .420 .548 .655 .844 1.04 1.18 1.56 2.00 2.06 2.63 2.75 3.19 3.92 5.69 6.32 7.30 15.5 13.9 12.6 11.6 9.89 8.70

Contextual Info: Preliminary RMLV0416E Series 4Mb Advanced LPSRAM 256k word x 16bit R10DS0205EJ0001 Rev.0.01 2013.09.10 Description The RMLV0416E Series is a family of 4-Mbit static RAMs organized 262,144-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0416E Series has realized higher density, higher

Contextual Info: RMLV0416E Series 4Mb Advanced LPSRAM 256-kword x 16-bit R10DS0205EJ0100 Rev.1.00 2014.2.27 Description The RMLV0416E Series is a family of 4-Mbit static RAMs organized 262,144-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0416E Series has realized higher density, higher

Contextual Info: R1LV0108E Series 1Mb Advanced LPSRAM 128k word x 8bit R10DS0049EJ0300 Rev.3.00 2013.6.21 Description The R1LV0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LV0108E Series has realized higher

R1LP0108ESA-7SR

Contextual Info: R1LP0108E Series 1Mb Advanced LPSRAM 128k word x 8bit R10DS0151EJ0100 Rev.1.00 2013.6.21 Description The R1LP0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LP0108E Series has realized higher

Contextual Info: R1LP0108E Series 1Mb Advanced LPSRAM 128k word x 8bit R10DS0029EJ0300 Rev.3.00 2013.6.21 Description The R1LP0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LP0108E Series has realized higher

Contextual Info: R1LV0108E Series 1Mb Advanced LPSRAM 128k word x 8bit R10DS0152EJ0100 Rev.1.00 2013.6.21 Description The R1LV0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LV0108E Series has realized higher

Contextual Info: TOSHIBA T6B07 TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT T6 B 0 7 SILICON MONOLITHIC CO LU M N DRIVER FOR A DOT M A T R IX LCD The T6B07 is an 80-channel-output column driver for an STN dot matrix LCD. The T6BQ7 features 28-V LCD drive voltage and a 10-MHz maximum operating frequency. The

MB84VA2004

Abstract: MB84VA2005
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50106-1E MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 8M (x 8) FLASH MEMORY & 1M (× 8) STATIC RAM MB84VA2004-10/MB84VA2005-10 • FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance 100 ns maximum access time

HN58C256AP-85E

Abstract: HN58C256A HN58C256AFP-10 HN58C256AFP-85 HN58C256AP-10 HN58C256AP-85 HN58C256AT-10 HN58C256AT-85 HN58C257AT-85 HN58C256AT-10E
Contextual Info: HN58C256A Series HN58C257A Series 256k EEPROM 32-kword x 8-bit Ready/Busy and RES function (HN58C257A) REJ03C0148-0600Z Rev. 6.00 Oct. 26. 2006 Description Renesas Technology's HN58C256A and HN58C257A are electrically erasable and programmable ROMs organized as 32768-word × 8-bit. They have realized high speed low power consumption and high reliability

MB84VA2004

Abstract: MB84VA2005
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-50106-1E MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 8M (x 8) FLASH MEMORY & 1M (× 8) STATIC RAM MB84VA2004-10/MB84VA2005-10 • FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance

MB84VA2000

Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-50101-2E MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 8M (x 8) FLASH MEMORY & 2M (× 8) STATIC RAM MB84VA2000-10/MB84VA2001-10 • FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance

MB84VA2100

Abstract: MB84VA2101
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-50103-2E MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16M (x 8) FLASH MEMORY & 2M (× 8) STATIC RAM MB84VA2100-10/MB84VA2101-10 • FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance

VCCF02

Abstract: sA117 SA97 S-A106 sa123 SA124 Sa84 MBM29BS64LF SA125 SA101
Contextual Info: TM SPANSION MCP Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

MB84VA2104

Abstract: MB84VA2105
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-50108-1E MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16M (x 8) FLASH MEMORY & 1M (× 8) STATIC RAM MB84VA2104-10/MB84VA2105-10 • FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance

MB84VA2002

Abstract: MB84VA2003
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-50105-2E MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 8M (x 8/× 16) FLASH MEMORY & 2M (× 8) STATIC RAM MB84VA2002-10/MB84VA2003-10 • FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50214-1E 3Stacked MCP Multi-Chip Package FLASH & FCRAM & SRAM CMOS 64M (x16) FLASH MEMORY & 16M (×16) Mobile FCRAM & 4M (×16) STATIC RAM MB84VR5E3J1A1-85 • FEATURES • Power Supply Voltage of 2.7 to 3.1V • High Performance