TD 3404 Search Results

208G

Abstract: DKH36223
Contextual Info: mpvvl n1l so +u{q0 ,~szusxq+qs-u+y,-ys, AY[U G^0<@475592 =\RYU]c cU\_UaQcdaU < /62 JQcUT e^[cQWU< 472N=> c^ 92 JQcUT SdaaU]c < 9= ,_Ua _^[U- ?YU[UScaYS bcaU]WcX \Y]0 < 4222N=> ,RUcfUU] Y]_dc + ^dc_dc- KcUU[ aUcQY]Ua ch_U < 3:AA/C8 FQaZUa ch_U < 3:AA/F4 F^Td[U <

jep 35

Abstract: CADU 208G DKH36223
Contextual Info: nqwwm o2m tp ,v|r1 -*t{v. tyr,rt.v,z-.zt- AY[U G^0<@475592 =\RYU]c cU\_UaQcdaU < /62 JQcUT e^[cQWU< 472N=> c^ 92 JQcUT SdaaU]c < 9= ,_Ua _^[U- ?YU[UScaYS bcaU]WcX \Y]0 < 4222N=> ,RUcfUU] Y]_dc + ^dc_dc- KcUU[ aUcQY]Ua ch_U < 3:AA/C8 FQaZUa ch_U < 3:AA/F4 F^Td[U <

high power isolated bidirectional dc dc converter

Abstract: rs-422 db25 cables 422OISPR 422OISPR-3404 DB25 CONNECTOR 500W Bidirectional dc dc converter
Contextual Info: B&B ELECTRONICS 422OISPR-3404 - 1/2 2004 by B&B Electronics. All rights reserved. Model 422OISPR Reversed RS-232 to RS-422 Optically Isolated Converter With DB-25 Connectors & Surge Suppression CE The RS-232 to RS-422 converter converts unbalanced RS-232 signals to balanced RS-422 signals. The RS-422

DB25S

Abstract: TTL / RS 422 232TTL 422TTL DB25P TTL to RS 422 RTS16
Contextual Info: B&B ELECTRONICS 232TTL-3404 - 1/2 2004 by B&B Electronics. All rights reserved. Model 422TTL CE Four-Channel RS-422 to TTL Converter Description The 422TTL unit converts RS-422 signals to TTL signals. Two channels are used to convert from RS-422 to 0-+5 VDC

05 3404 00

Contextual Info: S T S 3404 S amHop Microelectronics C orp. S ep 15 2005 N-C hannel E nhancement Mode Field E ffect Trans is tor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable. 60 @ V G S = 10V

td 3404

Abstract: 3404A
Contextual Info: S T S 3404 Green Product S amHop Microelectronics C orp. S ep 15 2005 N-C hannel E nhancement Mode Field E ffect Trans is tor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m Ω ) Max R ugged and reliable.

IXGH20N50

Abstract: ixgh20n50u1 rectifier d 355 n 2000 ic 3404A
Contextual Info: I X Y S CORP 1ÖE D • ODOObTS 4 ■ T - 3 V 13 □IXYS A D V A N C E T E C H N IC A L D A TA S H E E T Data Sheet No. 3404A _ MOS1GBT with Anti-Parallel Rectifier March 1989 PART NUMBER IXGH20N50U1 F E A T U R E S :_

db25s

Abstract: 232TTL DB25P 14 pin ttl 232
Contextual Info: B&B ELECTRONICS 232TTL-3404 - 1/2 2004 by B&B Electronics. All rights reserved. Model 232TTL CE Four-Channel RS-232 to TTL Converter Description The 232TTL converts RS-232 to TTL levels. Two channels are used to convert from RS-232 to 0 to +5 VDC TTL signals and two channels are used to convert from 0 to +5 VDC TTL signals to RS-232. This converter supports RD,

IXGH20N50

Abstract: IXGH20N50U1 ic 3404A N-150 100V
Contextual Info: I X Y S CORP 1ÛE ß 4bôb22b OOOOLTS 4 ^ - 1 3 □IXYS ADVANCE TECHNICAL DATA S H E E T Data Sheet No. 3404A March 1989 PART NUMBER MOSIGBT with Anti-Parallel Rectifier IXGH20N50U1 • High Voltage MOSIGBT and Anti-Parallel Rectifier in One Package

Contextual Info: PART NUMBER 151- 3404-101 1 51-3404-106 131-3404-116 ITEM BODY BRASS GOLD PL .00001 MIN OVER NICKEL PL .0 0 0 0 5 MIN OVER COPPER PL .0 0 0 0 5 MIN BRASS NICKEL PL .0001 MIN OVER COPPER PL .0 0 0 0 5 MIN BRASS NICKEL PL .0001 MIN OVER COPPER PL .0 0 0 0 5 MIN

PW-2N

Abstract: pw-2nS pw2n
Contextual Info: MOS LSI TM S 3404 JC, TM S 3404 NC DUAL 512-BIT DYNAMIC SHIFT REGISTER m B features 3 C Two-phase dynamic logic > I 5-MHz shift rate Low power — 0.1 mW/bit at 1 MHz Power supplies — +5 V, -1 2 V Single-ended output T TL compatible — without external components

512-BIT

Abstract: SN7400 3404 PW01 PW02 TMS3404 TMS3404JC 05 3404 03
Contextual Info: M OS LSI TM S 3404 J C , TM S 3404 NC D U A L 512-BIT D Y N A M IC S H IFT REGISTER featu es Two-phase dynamic logic 5-MHz shift rate Low power — 0.1 m W /bit at 1 MHz Power supplies - +5 V , —12 V Single-ended output T T L compatible — without external components

Contextual Info: APT44GA60B APT44GA60S 600V High Speed PT IGBT TO APT44GA60S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -24 7 through leading technology silicon design and lifetime control processes. A reduced Eoff D 3 PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

APT44GA60B

Abstract: APT44GA60S MIC4452
Contextual Info: APT44GA60B APT44GA60S 600V High Speed PT IGBT TO APT44GA60S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

Contextual Info: APT44GA60B APT44GA60S 600V High Speed PT IGBT TO APT44GA60S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -24 7 through leading technology silicon design and lifetime control processes. A reduced Eoff D 3 PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

APT44GA60BD30C

Abstract: Fast Recovery Bridge Rectifier, 60A, 600V APT44GA60SD30C APT44GA60B MIC4452 rectifier bridge 300v 30a
Contextual Info: APT44GA60BD30C APT44GA60SD30C 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is TO APT44GA60SD30C -2 47 achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise

Contextual Info: APT44GA60BD30C APT44GA60SD30C 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise

APT44GA60B

Abstract: APT44GA60BD30 APT44GA60SD30 MIC4452 SD30
Contextual Info: APT44GA60BD30 APT44GA60SD30 600V High Speed PT IGBT T APT44GA60SD30 O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

Contextual Info: APT44GA60BD30C APT44GA60SD30C 600V High Speed PT IGBT FEATURES APT44GA60SD30C TO -24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise

474J

Contextual Info: APT44GA60BD30 APT44GA60SD30 600V High Speed PT IGBT T APT44GA60SD30 O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff D 3 PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

apt44ga60b

Contextual Info: APT44GA60B 600V High Speed PT IGBT TO -2 47 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

Contextual Info: APT44GA60BD30 APT44GA60SD30 600V High Speed PT IGBT T APT44GA60SD30 O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff D 3 PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

smd fuse marking 20

Abstract: UL 248-14 12V SMD fuse 014 IEC 68-2-58
Contextual Info: OMF 125V Quick-acting Surface Mount Fuse - High Breaking Capacity UL 248-14 formerly 198G CSA C22.2 No 248.14 (formerly 59.2M) NEW Approvals: UL recognition CSA certification Surge tolerant version for telecom: see page 162 63mA-10A 63mA-10A File #E41599