TD B2HKF Search Results

B2HKF

Abstract: 70N1 B2HKF 125
Contextual Info: TT B2C 70 N TD B2HZ 70 N, TD B2HKF 70 N Typenreihe/Type range_ T T B2C 70 N_ 600_ 800_ 1000_ 1200_ 1400_ 1600* Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Periodische Vorwärts- und

din 6900

Abstract: TT 46 N 12 TT60N TT 93 N 08 DIN 46 244 TT105N AD116s TT95N din 46247 4.8 DIN 46247
Contextual Info: Outlines 6,3 * 0 8 I ,7 1 4=*„ -0 i i_ l i/ i 2 case C: 0 = M6, case U: 0 = 1/4” case B -►I2- 4 case C: 0 = M8, case U: 0 = 1 /4 - 2 8 U N F - 2 A case B case E v00' - * 1 I-1 J— ‘ J L 3,5x 2 - s 38 * 2 3 —— 1=3 'A Outlines ‘

B2HKF

Abstract: thyristor TT 430 N 22 TT 46 N 800 TT 56 N thyristor tt 250 n 16 thyristor TT 46 N 1200 thyristor tt 162 n 12 thyristor tt 121 thyristor TT 430 thyristor tt 500 n 16
Contextual Info: ISOPACK Modules Type ISOPACK Module VDRM, VRRM IFRMSM V A VDSM = VDRM VRSM = VRRM + 100 V IFSM ∫ i²dt Id/tC A A²s A/°C V TO 10 ms, tvj 10 ms, tvj max max rT RthJC RthCK tvj max °C V mΩ °C/W °C/W tvj = tvj max tvj = tvj max per arm per arm Single phase diode bridges

B2HKF

Abstract: TDB2HKF85 TT 80 N 1200 TDB2HKF TTB6C B6HK110N
Contextual Info: ISOPACK Modules Type Vdrm, V r r m V dsm = Itsm 10 ms, / i 2dt Ic/tc V TO 10 ms, ( Ir ms^ c ) tvj t'.'i max ^v: max A A A 2s It r m s m V drm V r s m = V r r m + 100 V V A /°C rT Rthjc R th C K = t»¡ = per arm per arm m a* Wj max tv j max Outline V mi2

B2HKF

Abstract: TTB6C110N TDB6HK110N DDB6U160N B2HKF 250 TDB2HKF85 TDB2HKF B6U 205 N L TTB6C cr 4180
Contextual Info: Fast Asymmetric Thyristors Type V drm V rrm V V V dsm = V drm V rrm C tq=1 pS A 158 S 600. 1300* 15(50) It r s m A It s m i i 2dt Itavm^c kA A2s A/°C 10ms 10ms tvj max tvj max *103 400 2,5 30 V(TO) rT (di/d t)cr V m ii A/pis tvj = tvj = DIN I EC tvjma* tvj max 747-6

B2HKF

Abstract: b2hkf70n CS 13001 IC 7476 DDB6U110N AD60F DD86 ac switches isoPACK B6U60 TDB6HK165N
Contextual Info: Fast Asymmetric Thyristors Type V V drm V V dsm = rrm V V drm V It r s m A rrm C tq = 1 p S It s m i i 2dt kA A2s 10ms 10ms tyj max tyj max It a v m ^ c V (TO ) rT V m ii (di/dt)cr tq 1 ) (dv/dt)cr V gt Igt A/ps MS V/|JS DIN IEC 747-6 V mA tvj = 1 8 0 °

Contextual Info: Fast Asymmetric Thyristors T ype V drm V rrm Itrsm Itsm l i 2dt Itavm^ c V V A kA A2s 10ms 10ms tvj max tvj max *103 A /°C 180° el sin V dsm = V drm V rrm C tq=1 pS A 158 S 600. 1300* 15(50) 400 2,5 30 V(TO) rT (d i/d t)cr V m i2 A / jjs tvj = tvi = DIN I EC

VVY 40-16IO1

Abstract: B2HKF ixys vhf 28-08io5 vgo 36-08io7 vvy40 ixys vuo 52 input id VKO 15-08io5 VUM 33-05 F1-10 F1-20
Contextual Info: 1~ Rectifier Bridges & PFC Modules Contents 1 2 1 3 5 18 21 21 30 31 35 38 40 45 50 52 54 55 65 68 72 107 124 122 174 2000 1600 20 ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● 1400 06 08 12 14 16 18 ● ● ● ● ● ●

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches