TD DIODE Search Results

Contextual Info: CPC1590 Optically Isolated Gate Driver INTEGRATED CIRCUITS DIVISION Driver Characteristics Description Parameter Rating Units Input Current 2.5 mA Switching Speed IF=5mA, MOS Input Capacitance=4nF td(on) 12 td(off1) (VGS=2V) 125 td(off2) (VGS=1V) 210 s

led lifespan

Contextual Info: CPC1590 Optically Isolated Gate Driver INTEGRATED CIRCUITS DIVISION PRELIMINARY Driver Characteristics Description Parameter Rating Units Input Current 2.5 mA Switching Speed IF=5mA, MOS Input Capacitance=4nF td(on) 12 td(off1) (VGS=2V) 125 td(off2) (VGS=1V)

1838 t

Abstract: 1838t IR 1838 T IR 1838 T datasheet D-10 IRGPH50MD2 c485
Contextual Info: IRGPH50MD2 90% Vge +Vge Same type device as D.U.T. Vce Ic 430µF 80% of Vce 90% Ic 10% Vce Ic D.U.T. 5% Ic td off tf Eoff = ∫ t1+5µS Vce ic dt t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on) , tr, td(off) , tf

Contextual Info: SILICON MONOLITHIC TD62386AP/AF TD62387AP/AF TD62388AP/AF BIPO LAR DIGITAL INTEGRATED CIRCUIT 8 CH LOW INPUT ACTIVE DARLINGTON SINK DRIVER T h e T D 62386A P, TD 62386AF, TD 62387A P, TD 62 38 7 A F an d T D 62388A P, TD 62388A F are no n -in vertin g tran sistor

D-10

Abstract: IRGPH50MD2 1838t
Contextual Info: IRGPH50MD2 90% Vge +Vge Same type device as D.U.T. Vce Ic 430µF 80% of Vce 90% Ic 10% Vce Ic D.U.T. 5% Ic td off tf Eoff = ∫ t1+5µS Vce ic dt t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on) , tr, td(off) , tf

IRGBC20FD2

Abstract: D-12 T4 diode 18-A
Contextual Info: IRGBC20FD2 90% Vge +Vge Vce Same type device as D.U.T. Ic 90% Ic 10% Vce Ic 5% Ic 430µF 80% of Vce td off D.U.T. tf Eoff = Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on), tr, td(off), tf t1 ∫ t1+5µS Vce ic dt

IRGBC20FD2

Abstract: diode 18b diode 18C D-12 DIODE T4 T4 DIODE diode c100 18-A
Contextual Info: IRGBC20FD2 90% Vge +Vge Vce Same type device as D.U.T. Ic 90% Ic 10% Vce Ic 5% Ic 430µF 80% of Vce td off D.U.T. tf Eoff = Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on), tr, td(off), tf t1 ∫ t1+5µS Vce ic dt

TD52

Contextual Info: DIGITALLY CONTROLLED PIN-DIODE FREQUENCY TRANSLATORS SERIES TD GENERAL INFORMATION: KDI/Triangle's Series TD digitallycontrolled frequency translators are designed for serrodyning applications. The devices have low amplitude modulation, high linearity, and fast fly-back time, which produces superior carrier

rl 724 n

Abstract: 1SV202 1SV202BWT OF VR 10K
Contextual Info: 1SV202BWT VHF / UHF VARIABLE CAPACITANCE DIODE FEATURES PINNING Low matching error. DESCRIPTION PIN High capacitance ratio. n=6.3min Low series resistance. (rs=0.57Ω) 1 Cathode 2 Anode 2 1 TD Top View Marking Code: "TD" Simplified outline SOD-523 and symbol

Contextual Info: TO S H IBA TD 62381 P/F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT TD 6 2 3 8 1 P, TD SILICON MONOLITHIC 62381F 8CH LOW SATURATIO N SIN K DRIVER The TD62381P and TD62381F are comprised of eight NPN low saturation drivers. These devices are specifically designed for multiplexed digit driving of eight digit

SEMTECH MARKING

Abstract: 1SV202BWT rl 724 n
Contextual Info: 1SV202BWT VHF / UHF VARIABLE CAPACITANCE DIODE FEATURES PINNING Low matching error. DESCRIPTION PIN High capacitance ratio. n=6.3min Low series resistance. (rs=0.57Ω) 1 Cathode 2 Anode 2 1 TD Top View Marking Code: "TD" Simplified outline SOD-523 and symbol

1SV202BWT

Abstract: 1SV202
Contextual Info: 1SV202BWT VHF / UHF VARIABLE CAPACITANCE DIODE PINNING FEATURES DESCRIPTION PIN • Low matching error • High capacitance ratio n = 6.3 min 1 Cathode 2 Anode • Low series resistance (rs = 0.57 Ω) 2 1 TD Top View Marking Code: "TD" Simplified outline SOD-523 and symbol

1SV202

Abstract: 1SV202BWT
Contextual Info: 1SV202BWT VHF / UHF VARIABLE CAPACITANCE DIODE PINNING FEATURES DESCRIPTION PIN • Low matching error • High capacitance ratio n = 6.3 min 1 Cathode 2 Anode • Low series resistance (rs = 0.57 Ω) 2 1 TD Top View Marking Code: "TD" Simplified outline SOD-523 and symbol

Contextual Info: □ IXYS Preliminary Data Sheet High Voltage IGBT with Diode IXSK35N120AU1 VCES I Maximum Ratings Symbol Test Conditions VCES VCGR v GES vGEM Td = 25°C to 150°C 1200 V Td = 25°C to 150°C; RGE = 1 M£i 1200 V Continuous ±20 V Transient ±30 V ^C25 Tc = 25°C

smd diode 819

Abstract: rg33c
Contextual Info: Preliminary Data Sheet IXGH32N60BU1 IXGH32N60BU1S HiPerFAST IGBT with Diode V CES ^C25 V CE sat Combi Pack ^fi ?C = = = = 600 V 60 A 2.5V 80 ns G OE Symbol TestConditions v CES Td = 25°C to 150°C 600 V v CGR Td = 25°C to 150°C; RGE = 1 Mil 600 V VGES

Contextual Info: □ IXYS Advanced Technical Information IXGH 31N60D1 IXGT 31N60D1 Ultra-LowVCE sat IGBT with Diode V CES = 600 V = 60 A = 1.7 V ^C25 V CE(sat) Combi Pack Symbol Test Conditions Maximum Ratings V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i

IRF7101

Abstract: MS-012AA
Contextual Info: IRF7204PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Qg Q gs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage

IRF7101

Contextual Info: IRF7306PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage

Contextual Info: □IXYS Advanced Technical Information Ultra-LowVCE sat IGBT with Diode IXGH 28N60B IXGT 28N60B V CES = 600 V = 40 A = 2.0 V ^C25 V CE(sat) Combi Pack Symbol TestConditions v CES Td = 25°C to 150°C 600 V VCGR Td = 25°C to 150°C; RGE = 1 M£i 600 V VGES

P 1010

Abstract: AL 102 074d
Contextual Info: □IXYS Advanced Technical Information IXSK 40N60BD1 IXSX 40N60BD1 IGBT with Diode PLUS247 package ^fi typ Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C, limited by leads

Contextual Info: TD E1890 TD E1891 2A HIGH-SIDE DRIVER INDUSTRIAL INTELLIGENT POWER SWITCH • ■ ■ ■ ■ ■ ■ . ■ . ■ 2A OUTPUT CURRENT 18V TO 35V SUPPLY VOLTAGE RANGE INTERNAL CURRENT LIMITING THERMAL SHUTDOWN OPEN GROUND PROTECTION INTERNAL NEGATIVE VOLTAGE CLAMPING

Contextual Info: IRF7303QPbF Electrical Characteristics @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient Qg Q gs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage

314P

Abstract: EIA-541 IRFL014 TO-261AA Package
Contextual Info: IRLL014PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage

NS4290

Abstract: F7101 IRF7101
Contextual Info: IRF7104PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Qg Q gs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage