TD-42 F 04 Search Results

Contextual Info: VN B14N04/K14N04FM VNP14N04FI/VNV14N04 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VN B14N 04 VN K14N 04FM VNP14N 04FI VN V14N 04 Vclamp 42 42 42 42 V V V V R D S o n 0 .0 7 0 .0 7 0 .0 7 0 .0 7 Q. a n Cl 11im 14 14 14 14 A A A A . . . . . .

AKN62428

Abstract: 048576-WORD
Contextual Info: AKN62418 Series AKN62428 Series 524288-Word A KN62418, x 16-Bit/I 048576-Word A K N 62428 Series is x 8-Bit CMOS Mask Programmable ROM mask- PIN CONFIGURATION programmable ROM organized either as 524288-word x 16-Bit or as an 8-Mbit CM O S A K N 62418P, A K N 62428P

Contextual Info: VNP28N04FI VNB28N04/VNV28N04 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE V clamp R D S o n I lim VNP28N 04FI VN B28N 04 VN V28N 04 42 V 42 V 42 V 0.0 35 Q. 0 .0 3 5 a 0.0 35 n 28 A 28 A 28 A . . . . . . LINEAR CURRENT LIMITATION THERMAL SHUT DOWN

Contextual Info: rz J Ä T# S C S -T H O M S O N [M G IM llL iO T » ! V N H 100N 04 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TA R G E T D A T A TYPE Vclamp RDS on 1lim VN H 100N04 42 V 0 .0 1 2 Û 100 A . . . . . . . . . . LINEAR CURRENT LIMITATION THERMAL SHUT DOWN

SKM224A

Contextual Info: Absolute Maximum Ratings Symbol VDS VDGR ID IDM VGS PD Tj, Tstg Visol humidity climate Conditions 1 RGS = 20 kΩ Tcase = 25 °C Tcase = 85 °C AC, 1 min DIN 40 040 DIN IEC 68 T.1 Values Units 200 200 120 87 360 ± 20 500 – 55 . . .+150 2 500 Class F 55/150/56

41C0R

Abstract: ISO 11452-3 5Z27 DIODE C18090 Q62705-K714 t-5Z27 DIODE TLE4941C
Contextual Info: Data Sheet, V 2.1, April 2005 TLE4941 TLE4941C Differential Two-Wire Hall Effect Sensor IC Se n so rs N e v e r s t o p t h i n k i n g . Edition 2005-04 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany Infineon Technologies AG 2005.

8414 hr papst

Contextual Info: Kompaktlüfter für Gleich- und Wechselspannung Ausgabe 2015-04 Trendsetter in der Lüftertechnologie Kompromisslose Qualität made by ebm-papst Zu den Besten gehören Mit innovativen Technologien Trends setzen. Den Kunden zuhören. Aus den Anforderungen der Praxis neue Ideen entwickeln und mit Pioniergeist in die Tat umsetzen. Mit dieser Philosophie ist ebm-papst zum

Contextual Info: Æ T S G S -1H 0M S 0N D lsi S IIL[lCTIs! iD©S VNW50N04A ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE V clamp R D S (o n ) I lim VNW 50N 04A 42 V 0.012 Q. 50 A . . . . . . . . . . LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION

RQK0303MGDQATL-E

Abstract: RQK0303MGDQA SC-59A
Contextual Info: RQK0303MGDQA Silicon N Channel MOS FET Power Switching REJ03G1276-0400 Rev.4.00 Jun 15, 2006 Features • Low on-resistance RDS on = 42 mΩ typ (VGS = 10 V, ID = 1.8 A) • Low drive current • High speed switching • 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A

Contextual Info: Æ T S G S - 1 H M S N n lsi S IIL[iCTIsî iD©S V N W 100 N 04 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET P R E L IM IN A R Y D A T A TYPE V clamp RDS(on) 11im VNW 100N 04 42 V 0 .012 Q. 1 00 A . . . . . . . . . . LINEAR CURRENT LIMITATION THERMAL SHUT DOWN

Contextual Info: Data Sheet PA2690T1R R07DS1000EJ0101 Rev.1.01 Mar 04, 2013 COMPLEMENTARY MOSFET 20V, 4.0A, 42mΩ / –20V, –3.0A, 79mΩ Description The μPA2690T1R is Dual N- and P-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications

Contextual Info: Absolute Maximum Ratings Symbol VDS VDGR ID IDM VGS PD Tj, Tstg Visol humidity climate Conditions 1 RGS = 20 kΩ AC, 1 min DIN 40 040 DIN IEC 68 T.1 Values Units 800 800 36 144 ± 20 700 – 55 . . .+150 2 500 Class F 55/150/56 V V A A V W °C V 36 144 A

P600

Abstract: 15KP 15KP17 15KP18 15KP20 15KP22 15KPJ17 t-d 94v 0
Contextual Info: DATA SHEET 15KP SERIES GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE- 17 to 220 Volts 15000 Watt Peak Pulse Power P-600 FEATURES .052 1.3 .048 ( 1.2 ) 1.0 ( 25.4 ) MIN. • Plastic package has Underwriters Laboratory Flammability Classification 94V-O

GSS4816S

Abstract: GSS6900S
Contextual Info: Pb Free Plating Product ISSUED DATE :2006/04/28 REVISED DATE : CH1 BVDSS 30V N-CH RDS ON 30m N-CH ID 5.7A CH2 BVDSS 30V N-CH RDS(ON) 22m N-CH ID 9.8A GSS6900S DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE Description The GSS6900S provide the designer with the best combination of fast switching, ruggedized device design,

3217b

Abstract: NEC 4216160 4216160 IC-3217B 4218160
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT /¿PD42S16160,4216160,42S18160,4218160 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE D escription The /iPD42S16160, 4216160, 42S18160, 4218160 are 1 048 576 words by 16 bits dynamic CMOS RAMs.

Contextual Info: Preliminary Datasheet RQK0303MGDQA R07DS0306EJ0500 Previous: REJ03G1276-0400 Rev.5.00 Mar 28, 2011 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 42 m typ (VGS = 10 V, ID = 1.8 A)  Low drive current  High speed switching

Contextual Info: SD-3988Q-010 24,41 [,981 ] 2,54 1 , 100 ] 14,71 570] B+5,08 [B+,200] 5,00 [,197] 0,80 [,024] ADX. V I E ! SCALE 1:1 9 BIRCUIT SHOWN H m 1,80 [.083] 01 10 [ ,043] H i H 1 H _ T H B 2,50 H 1,70 [,087] 0,50 0 20 ] 0,90 [,035] 2,54 [,100] ' 3,78 149] — t ^ — t— ®

Contextual Info: se MIKRDn Absolute Maximum Ratings V a lu e s Units Symbol C onditions 1 VcES VcGR lc IcM Vges Rge = 20 k ii Tease = 25/80 °C Tease = 25/80 °C¡ tp = 1 ms 1700 1700 7 5 /5 0 144/100 ±20 per IGBT, Tease = 25 °C AC, 1 min. DIN 4 0 040 DIN IEC 68T .1 500

Contextual Info: VNP49N04FI VNB49N04 / VNV49N04 “OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE V CLAMP R DS ON • l im 42 V 20 m£2 49 A VNP49N 04FI VN B49N 04 VN V49N 04 „ „ „ „ „ „ LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP

2n0404

Abstract: SPB80N04S2-04 SPP80N04S2-04
Contextual Info: SPP80N04S2-04 SPB80N04S2-04 Preliminary data OptiMOS =Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version •=175°C operating temperature ID • Avalanche rated P-TO263-3-2 40 V 3.4 mΩ 80 A P-TO220-3-1

2n0404

Abstract: SPB80N04S2-04 SPP80N04S2-04
Contextual Info: SPP80N04S2-04 SPB80N04S2-04 Preliminary data OptiMOS =Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version •=175°C operating temperature ID • Avalanche rated P-TO263-3-2 40 V 3.4 mΩ 80 A P-TO220-3-1

SD 1351

Contextual Info: SPICE Device Model SUP/SUB85N03-04P Vishay Siliconix N-Channel 30-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Values Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC

GI6679

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/08/04 REVISED DATE : GI6679 BVDSS RDS ON ID P-CHANNEL ENHANCEMENT MODE POWER MOSFET -30V 9m -75A Description The GI6679 provide the designer with the best combination of fast switching, ruggedized device design, low