TD2 MARKING Search Results

Contextual Info: THE INFORMATION CONTAINED HEREIN IS CONSIDERED 'PROPRIETARY' TO BEL FUSE INC. AND SHALL NDT BE COPIED, REPRODUCED OR DISCLOSED WITHOUT THE WRITTEN APPROVAL DF BEL FUSE INC, TD1+ 1 TCT1 TD1- 2 3 TD2+ 4 TCT2 TD2- 5 6 TD3+ 7 TCT3 TD3- 8 9 SCHEMATIC IC SIDE T1

diode marking code RJ

Abstract: C2680-0 C26800 diode marking RJ TD2 marking diode td3 diode Marking Code MOD
Contextual Info: ELECTRICAL: 3 6 7 8 9 10 C5 5 C4 4 7G46P8 GIGABIT CIRCUIT 2 C3 RJ-1 1 C2 R1 TD4+ RJ-2 SHIELD R2 MD1+ RJ-3 R3 MD1- RJ-4 TD2- R4 MD2+ TD3+ RJ-5 MD4- C1 MD2- TD4- D1 MD3+ TD3- MECHANICAL: LED1 D2 MD4+ TD2+ RJ-6 VCC TD1+ RJ-8 MD3- RJ-7 TD1- CH_GND D3 D4 LED2 Suggested Panel Cutout

Contextual Info: THE INFORMATION CONTAINED HEREIN IS CONSIDERED 'PROPRIETARY' TO BEL FUSE INC. AND SHALL NDT BE COPIED, REPRODUCED OR DISCLOSED WITHOUT THE WRITTEN APPROVAL DF BEL FUSE INC, RoHS SCHEMATIC TD1+ 1 TCT1 2 TD1- 3 TD2+ 4 TCT2 5 TD 2 - 6 TD3+ 7 TCT3 8 TD 3 - 9 - in n n fT u -

Contextual Info: TS809C and TS810C Microprocessor Reset Monitors t c u rod P New Description Pin Configuration SOT-23 Top View GND 1 3 Reset Output Vcc • When the processor power supply voltage drops below the reset threshold, the reset output is driven active, in less than 40µs (TD1). Reset is maintained active for a time period (TD2), after the Vcc

1D2 SOT-23

Abstract: BCX18 BCX19 BCX20
Contextual Info: • bbS3131 OOEMbQl TD2 H A P X N AHER PHILIPS/DISCRETE BCX19 BCX20 b?E ]> SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a SOT-23 plastic envelope, intended for application in thick and thin-film circuits. These transistors are intended for general purposes as well as saturated switching and driver applications

809C

Abstract: GS809C GS809CREU GS810C
Contextual Info: GS809C and GS810C Microprocessor Reset Monitors t c u rod P New Description Pin Configuration SOT-23 Top View GND 1 3 Reset Output Vcc • When the processor power supply voltage drops below the reset threshold, the reset output is driven active, in less than 40µs (TD1). Reset is maintained active for a time period (TD2), after the Vcc

Contextual Info: M TD2 0 0 1 • f i f i : / Features a V e • o f f b#fbi @ s • C o n s ta n t-C u rre n t C h o p p in g F u nction (F ixed O F F T im e) • 4 ÍIA * • 4 -P h a se Input • E N A B LE • E N A B LE F u nction • C ro ss C o n d u ctio n P ro te ctio n

NCP4420D

Abstract: NCP4420 NCP4420DR2 NCP4420P NCP4429 NCP4429DR2 NCP4429P
Contextual Info: NCP4420, NCP4429 6 A High-Speed MOSFET Drivers MARKING DIAGRAM 8 SO–8 D SUFFIX CASE 751 8 1 Latch–Up Protected: Will Withstand u1.5 A Reverse Output Current Logic Input Will Withstand Negative Swing Up to 5 V ESD Protected 4 kV Matched Rise and Fall Times (25 nsec)

NCP power transformer

Abstract: NCP4420 NCP4420DR2 NCP4420P NCP4429 NCP4429DR2 NCP4429P
Contextual Info: NCP4420, NCP4429 6 A High-Speed MOSFET Drivers Features • • • • • • • • • • • • • http://onsemi.com MARKING DIAGRAM 8 SO–8 D SUFFIX CASE 751 8 1 8 u 1 1 x YY, Y WW X Z CO 8–Pin SOIC VDD 1 INPUT 2 NC 3 GND 4 June, 2000 – Rev. 0

10mH inductor

Contextual Info: TE and TD VISHAY Vishay Dale Filter Inductors T Toroid FEATURES • Choice of encapsulated TE or dipped (TD) styles. • TD style combines low cost with excellent performance in commercial applications. • High Q and wide selection of Q versus frequency ranges in one

200mh inductor

Abstract: 100mh inductor design inductor 2mH inductor 100mh TE 555 MIL-T-27
Contextual Info: Models TE and TD Vishay Dale Filter Inductors Toroid FEATURES • Choice of encapsulated TE or dipped (TD) styles. • TD style combines low cost with excellent performance in commercial applications. • High Q and wide selection of Q versus frequency ranges in one small package.

200mh inductor

Abstract: inductor 100mH
Contextual Info: TE and TD Vishay Dale Filter Inductors Toroid FEATURES • Choice of encapsulated TE or dipped (TD) styles. • TD style combines low cost with excellent performance in commercial applications. • High Q and wide selection of Q versus frequency ranges in one

TD5 437

Abstract: 200mh inductor 100mh inductor design Vishay TE2 MIL-T-27 20MH100 td3 700 td-3
Contextual Info: Models TE and TD Vishay Dale Filter Inductors Toroid FEATURES • Choice of encapsulated TE or dipped (TD) styles. • TD style combines low cost with excellent performance in commercial applications. • High Q and wide selection of Q versus frequency ranges in one small package.

200mh inductor

Contextual Info: TE and TD Vishay Dale Filter Inductors Toroid FEATURES • Choice of encapsulated TE or dipped (TD) styles. • TD style combines low cost with excellent performance in commercial applications. • High Q and wide selection of Q versus frequency ranges in one

Contextual Info: MODELS TE and TD Filter Inductors Toroid F E A TU R E S • Choice of encapsulated TE or dipped (TD) styles • TD style combines low cost with excellent performance in commercial applications • High Q and wide selection of Q versus frequency ranges in one small package.

rj45 connection

Abstract: RJ45 pcb ARJ-1001 ARJ-1002 ARJ-1003 ARJ-10XX marking TD2 TD2 marking
Contextual Info: GIGABIT RJ45 LAN MAGNETIC ARJ-10XX SERIES | | | | | | | | | | | | | | | FEATURES: • Low cost 1x1 Tab-Down RJ45 • Available with or without LED • Suitable CAT 5 & 6 cable and UTP • Comply IEEE 802.3ab OPTIONS: • PVC tube package APPLICATIONS: • LAN Magnetic with RJ45

F3853

Abstract: F3853PC *3853pc F3870 Guide to Programming F3852 Fairchild F8 example SL31116 TCS2200 F3850 Guide to Programming F3853DC
Contextual Info: •L- NATL. ^ M I C O N » ÎÜ P /U O D2E D | bSOllSâ 00 rool«. ■ Dynamic Memory Interface DMI / F3853 Static Memory Interface (SMI) Microprocessor Product Description Connection Diagram The Fairchild F3852 Dynamic Memory Interface (DMI) and F3853 Static Memory Interface (SMI) provide all

G33US

Abstract: M26US
Contextual Info: INTEGRATED MODULAR JACK 10/100/1000 Gigabit Ethernet RJ45 Single Port Tab Up Meets or exceeds IEEE 802.3 standard for 10/100/1000 Base-TX 350 uH minimum OCL with 8mA DC bias current Available with or without LEDs Minimum 1500Vrms isolation per IEEE802.3 requirement

SiP809

Abstract: SiP809CREUDT marking EDXXX SOT SiP809CTEUADT Siliconix sot23 marking SiP810CJEUDT SiP810CSEUDDT
Contextual Info: SiP809C/SiP810C Vishay Siliconix Microprocessor Reset Monitors FEATURES D D D D D D D D APPLICATIONS D Computers Tight Reset Voltage Tolerances "1.5% 4 Reset Active Timeout Period Options Low Quiescent Current: t 3 A 6 Reset Threshold Options From 2.63 V to 4.63 V

SiP810CTEUDT

Abstract: SiP810CJEUDT SiP810C27EUDT EExxx SiP810CSEUDDT SiP809CTEUADT SiP810CTEUEDT sip809cmeudt SiP810CJEUDDT SiP810CLEUDT
Contextual Info: SiP809C/SiP810C Vishay Siliconix New Product Microprocessor Reset Monitors FEATURES D D D D D D D D APPLICATIONS D Computers Tight Reset Voltage Tolerances "1.5% 4 Reset Active Timeout Period Options Low Quiescent Current: t 3 A 6 Reset Threshold Options From 4.63 V to 6.3 V

mos sot23-5

Abstract: AKXXX SiP823 SiP823LEU SiP823MEU SiP823REU SiP823SEU SiP823TEU SiP824 SiP825
Contextual Info: SiP823/SiP824/SiP825 Vishay Siliconix 5-Pin mP Reset Circuits with Watchdog Timer and Manual Reset FEATURES D D D D D D D D APPLICATIONS D Portable Intelligent Electronics D Computers and Controllers D Automotive Electronics Precision Power Supply Monitoring with "1.5% Accuracy

AKXXX

Contextual Info: SiP823/SiP824/SiP825 Vishay Siliconix New Product 5-Pin mP Reset Circuits with Watchdog Timer and Manual Reset FEATURES D D D D D D D D APPLICATIONS D Portable Intelligent Electronics D Computers and Controllers D Automotive Electronics Precision Power Supply Monitoring with "1.5% Accuracy

Contextual Info: M ODELS TE AND TD Filter Inductors Toroid FEATURES • Choice of encapsulated TE or dipped (TD) styles • TD style combines low cost with excellent performance in commercial applications • High Q and wide selection of Q versus frequency ranges in one small package. Large

Contextual Info: Ordering number : ENA0666A TND323VD Excellent Power Device http://onsemi.com Inverter and buffer driver for general purpose, Dual VEC8 Features • • • • • • • • Inverter buffer Monolithic structure High voltage CMOS process adopted Withstand voltage of 25V is assured