TDB6HK Search Results

62ajk

Abstract: 2A99 TDB6HK360N16P
Contextual Info: Technische Information / technical information TDB6HK360N16P IGBT-Module IGBT-modules EconoPACK 4 Modul und PressFIT / NTC EconoPACK™4 module and PressFIT / NTC * + , (-./ 0 1 ( 2- 345 0 1 6 , 2-78 0 9 : ; 6 < * •= • • !B( B • • • • *

Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules TDB6HK180N16RR EconoPACK 2Modul EconoPACK™2module VorläufigeDaten/PreliminaryData VCES = 1200V IC nom = 180A / ICRM = 360A TypischeAnwendungen • AktiverGleichrichter • HalbgesteuerteB6-Brücke

TDB6HK180N16RR

Contextual Info: テクニカルインフォメーション/TechnicalInformation IGBT-モジュール IGBT-modules TDB6HK180N16RR EconoPACK 2モジュール EconoPACK™2module 暫定データ/PreliminaryData VCES = 1200V IC nom = 180A / ICRM = 360A 一般応用

tdb6hk180n16rr_b11

Abstract: TDB6HK180N16RR-B11 TDB6HK180N16RR
Contextual Info: Technische Information / technical information TDB6HK180N16RR_B11 IGBT-Module IGBT-modules Diode-Gleichrichter / diode-rectifier Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values ! "# $% $ 2 & & 34 " % 4 3 53 3" ; & & &4 2

TDB6HK180N16RR

Abstract: 6a65
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules TDB6HK180N16RR_B11 Vorläufige Daten / preliminary data Diode-Gleichrichter / diode-rectifier Höchstzulässige Werte / maximum rated values !325CEF36"#E$% 6D13BC1322C14BBB& ' 6*6+,231336134$62332C364&3

TDB6HK240N16P

Contextual Info: Technische Information / technical information TDB6HK240N16P IGBT-Module IGBT-modules EconoPACK 4 Modul und PressFIT EconoPACK™4 module and PressFIT * + , (-./ 0 1 ( 2- 345 0 6 , 2-78 0 ! 6 9 : 6 ; * •< • • "A( A • • • • * =1 = > ? :

Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules TDB6HK180N16RR EconoPACK 2模块 EconoPACK™2module 初步数据/PreliminaryData VCES = 1200V IC nom = 180A / ICRM = 360A 典型应用 • 有源整流器 • 三相半控整流桥 TypicalApplications

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules TDB6HK240N16P EconoPACK 4 Modul und PressFIT EconoPACK™4 module and PressFIT C2 *36+436,61234286544 (-./6061( 2-6345606 66,62-78606 !6 981:366;35*3 • <47*333236=1=2>?3

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules TDB6HK360N16P EconoPACK 4 Modul und PressFIT / NTC EconoPACK™4 module and PressFIT / NTC C2 *36+436,61234286544 (-./6061( 2-6345606166,62-7860696 :81;366<35*3

GTO hvdc thyristor

Abstract: welding rectifier circuit board thyristor ltt 1590A single phase fully controlled rectifier scr control circuit for welding disc thyristor IGCT high single phase bridge rectifier pin configuration single phase bridge fully controlled rectifier
Contextual Info: Product Information Main Features Thyristors & Diodes • ■ ■ ■ BIPOLAR POWER SEMICONDUCTORS from Infineon Technologies are applied in the most varied fields of applications in a power range from a few kilo watts up to several giga watts. Besides the standard phase thyristors and rectifier diodes, our

FS300R12OE4P

Abstract: FS450R12OE4P FP06R12W1T4 F3L400R12PT4 bt 1690 scr fp150r07n3e4 F3L300R12PT4 Eupec thyristors catalog FF150R12RT4 Dz800S17ke3
Contextual Info: Short Form Catalog 2012 High Power Semiconductors for Industrial Applications www.infineon.com/highpower Auch mit dem KuKa Kurzkatalog 2012 bieten wir Ihnen wieder einen Überblick über dieses Spektrum mit vielen Details. Durch ständigen Dialog mit unseren Kunden haben wir auch in

B6U 205 N L

Abstract: N-16 B6U 145 n
Contextual Info: IsoPACK Bridge Rectifier & AC-Switches IsoPACK Brückengleichrichter & Drehstromsteller Type l«/Tc Vdrm, Vrrm I frmsm rT Ifsm V TO RthJC "Tvj max outline ma V V A/°C °c/w Otrmsm ) Otsm ) °c A V dsm = V drm A V rsm = 10 ms, Irms/T c Vrrm+100V T vj max

welding rectifier circuit board

Abstract: GTO hvdc thyristor SCR GTO three phase fully controlled rectifier scr control circuit for welding single phase fully controlled rectifier TT 2240 TDB6HK IGCT thyristor tt 330
Contextual Info: Product Information May 2006 Overview Bridge Rectifier, AC-Switches Product Information May 2006 Thyristors & Diodes 3000 VRRM[V] 2000 BIPOLAR POWER SEMICONDUCTORS from Infineon Technologies are applied in the most varied fields of applications in a power range from a few kilo watts up

B2HKF

Abstract: b2hkf70n CS 13001 IC 7476 DDB6U110N AD60F DD86 ac switches isoPACK B6U60 TDB6HK165N
Contextual Info: Fast Asymmetric Thyristors Type V V drm V V dsm = rrm V V drm V It r s m A rrm C tq = 1 p S It s m i i 2dt kA A2s 10ms 10ms tyj max tyj max It a v m ^ c V (TO ) rT V m ii (di/dt)cr tq 1 ) (dv/dt)cr V gt Igt A/ps MS V/|JS DIN IEC 747-6 V mA tvj = 1 8 0 °