TDMA Search Results

Contextual Info: S E M I C 0 N D U C T 0 R , I N C re m i W I R E L E S S C O M M U N I C A T I O N S LNA OUT 1900 Vdd MXR 1900 MXR LO 1900 TQ9222 TQ9222 VDD LNA 1900 MXR RF 1900 LNA IN IF TUNE MXR IF 1900 MXR IF 800 Vqd LNA 800 LNA IN 800 Dual-Band TDMA Domeonverter IC MXR RF

Contextual Info: CMX7161 CML Microcircuits Digital Radio Processor COMMUNICATION SEMICONDUCTORS DATASHEET D/7161_FI-1.0/3 September 2013 Advance Information 7161FI-1 TDMA Digital Radio Processor Features Tx Functions: • Two-point modulation analogue outputs  Root-raised-cosine =0.2 pulse shaping

Contextual Info: RF2492 Preliminary 8 DUAL-BAND LOW NOISE AMPLIFIER/MIXER Typical Applications • TDMA-GSM Cellular/PCS Handsets • CDMA Cellular/PCS Handsets • TDMA Cellular/PCS Handsets • GSM DCS/PCS Handsets • GAIT Handsets Product Description 1.00 0.85 Optimum Technology Matching Applied

MRF6S21140HR3

Abstract: MRF6S21140HSR3 AN1955 MRF6S21140H D2080 Nippon capacitors
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S21140H Rev. 5, 2/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

gsm modem with arm

Abstract: arm gsm gsm signal amplifier GSM Viterbi GMSK modulator gsm modem interfacing with arm 7 processor GSM Modem USB TIA AGC application note PCI3700 analog encoder
Contextual Info: CDMA GSM TDMA UMTS CDMA GSM TDMA UMTS CDMA GSM TDMA UMTS PCI3700 TIA /EIA -136/GSM PCI3700 TIA/EIA-136/GSM Integrated Baseband Processor GSM GENERAL FEATURES Complete GSM Series 4, 5, and 11.10 specification compatibility Supports up to 14.4 kbps circuit-switched data services

J216

Abstract: UPF1030 J2-13
Contextual Info: URFDB Sec 05_1030 11/3/99 10:39 AM Page 5-1 UPF1030 30W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications up to frequencies of 1GHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, FM,

SSO20

Abstract: T7024 T7024-DB T7024-PGQ T7024-PGS T7024-TRQ T7024-TRS
Contextual Info: T7024 ISM 2.4 GHz Front End IC Description The T7024 is a monolithic SiGe transmit/ receive front end IC with power amplifier, low-noise amplifier and T/R switch driver. It is especially designed for operation in TDMA systems like Bluetooth, DECT, IEE 802.11 FHSS

Contextual Info: S e m i c o n d u c t o r s «J / V V fJ U DECT SiGe Front End IC Description The U7004B is a monolithic SiGe transmit/receive front end IC with power amplifier, low-noise amplifier and T/R switch driver. It is especially designed for operation in TDMA systems like DECT.

J406

Abstract: J248 J425 ultrarf UPF2245 J242
Contextual Info: URFDB Sec 14_2245 11/3/99 11:23 AM Page 14-1 UPF2245 45W, 2.2GHz, 26.5V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications operating at or near 2.2GHz. Rated with a minimum output power of 45W, it is ideal for CDMA, TDMA,

Contextual Info: Tem ic U7006B S e m i c o n d u c t o r s DECT SiGe Front End IC Description The U7006B is a monolithic SiGe transmit/receive front end IC with power amplifier, internally 50-Q matched, low-noise amplifier and T/R switch driver. It is especially designed for operation in TDMA systems like DECT. Due

dqpsk modulator

Abstract: cdma baseband processor TIA AGC application note PCI3610 EIA-136-410 PSK modulation
Contextual Info: CDMA GSM TDMA UMTS CDMA GSM TDMA UMTS CDMA GSM TDMA UMTS PCI3610 TIA /EIA -136 PCI3610 TIA/EIA-136 Integrated Baseband Processor PCI3601 GENERAL FEATURES Complete TIA/EIA-136 baseband solution, exceeding all TIA/EIA-136-270 specifications Supports TIA/EIA-136-310, 136-350, 136-320 Data Services and SMS

RF2377

Abstract: RF2377-410 RF2377-411 Regulated Power Supply variable Schematic Diagram
Contextual Info: RF2377 PCS/CELLULAR TDMA/CDMA/W-CDMA LINEAR VARIABLE GAIN AMPLIFIER Package: SOT23-6 Features „ „ „ „ „ 50dB Linear Gain Control Range 24dB Maximum Gain Single 2.7V to 3.3V Supply 45mA Supply Current High Linearity RF OUT 1 GND 2 GC 3 Applications „

12C86

Abstract: RF2486 VCC310
Contextual Info: RF2486 8 PCS LOW NOISE AMPLIFIER/MIXER Typical Applications • CDMA/TDMA/DCS1900 PCS Systems • Micro-Cell PCS Base Stations • PHS 1500/WLAN 2400 Systems • Portable Battery Powered Equipment • General Purpose Down Converter Product Description .157

M7707

Abstract: rd201 PLD-10 imv D6-11 BV 726 C 1 Converter w5753 fd187 sGCT function PR 161A RD202
Contextual Info: O K I Semiconductor MSM7707 Baseband integration LSI device for PHS GENERAL DESCRIPTION The MSM7707 is an LSI device with an ADPCM CODEC function, jt/4 shift QPSK modulation/ demodulation function and a TDMA-TDD function required for PHS Personal Handy phone

J326

Abstract: schematics for a PA amplifier RF2442
Contextual Info: RFEÜ RF2442 MICRO-DEVICES H I G H - L I N E A R I T Y L OW N O I S E A M P L I F I E R Typical Applications • TDMA/CDMA/FM Cellular Rx LNA • 2.4 GHz WLAN Systems • TDMA/CDMA PCS Rx LNA • General Purpose Amplification • Low Noise Transmit Driver Amplifier

j326

Abstract: RF2627
Contextual Info: RF* RF2627 Preliminary M ICRO-DEVICES 3 V C D M A RE C E IV E AGC A M P L IF IE R T y p ic a l A p p lic a t io n s • 3 V CDMA Cellular Systems • General Purpose Linear IF Amplifier • 3V CDMA PCS Systems • Commercial and Consumer Systems • 3V TDMA Cellular/PCS Systems

L130

Abstract: 1S136 1S95 AP107-81 SOIC-16 w50 schematic AP-107
Contextual Info: GaAs MMIC 1.9 GHz Power Amplifier in High Power Plastic Package AP107-81 Features • PCS TDMA 1S136 ■ PCS CDMA (1S95) ■ Linear Power Up to 31 dBm (PEP) ■ 6 Volt Operation ■ Efficiency Greater Than 30% 1,2 ■ High Power 16 Lead SOIC Package Electrical Specifications at 25°C

RF2364

Contextual Info: RF2364 3V PCS LOW NOISE AMPLIFIER Typical Applications • CDMA PCS LNA • General Purpose Amplification • TDMA PCS LNA • Commercial and Consumer Systems • W-CDMA/CDMA2000 LNA Product Description The RF2364 is a low noise amplifier with a high dynamic

HB 541

Abstract: k BAND LOW PHASE gaAs FET RF2483 800MHz 800MHz gsm Handset Circuit Diagram 900mhz frequency generator
Contextual Info: RF2483 LOW NOISE DUAL-BAND QUADRATURE MODULATOR WITH AGC RoHS Compliant & Pb-Free Product Typical Applications • TDMA/GSM/EDGE Handsets • TDMA-Based Wireless Applications • GSM/EDGE Handsets • Wireless Local Loop • W-CDMA Handsets • Basestations

diode C531

Abstract: c531 diode C531 ultrarf 10UF MMBTA64 MRF21060 UPF21060 f217
Contextual Info: UPF21060 60W, 2.2 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for UMTS base station applications in the frequency band 2.1 to 2.2 GHz. Rated with a minimum output power of 60W, it is ideal for W-CDMA, CDMA, TDMA, GSM, and Multi-Carrier

IS136

Abstract: MGCM02 MGCT02 MGCT04
Contextual Info: Zarlink Semiconductor, formerly Mitel Semiconductor, announced its new trade identity on May 29, 2001. To reflect that new identity, rebranding of all product documentation will be completed by August 31, 2001. MGCM02 TDMA/AMPS IF and Baseband Interface Preliminary Information

CDM1900C

Abstract: CDMA800 CGM20G CGM22TA CGM800C
Contextual Info: Power Amplifier Modules For single, dual and triple band Types Systems Chains CGM20G GSM/PCN+GPRS Dual CGM800C CDMA800 Single CDM1900C CDMA1900 Single TDMA/GSM/AMPS Dual CGM22TA Easy to design in No external matching required RF Out 50 Ohm RF Out 50 Ohm Ceramic substrates

MGCM02

Abstract: MGCT04 90dB AGC Amplifier VHF oscillator 900mhz Diplexer
Contextual Info: MGCT04 Transmit Circuit for TDMA/AMPS and CDMA/AMPS Preliminary Information Features • • • • • • DS5424 Dual RF Ports for 900MHz and 1900MHz AGC Amplifier with 90dB of Variable Gain, Fully Compensated for Temperature On-chip Active Filter Removes the

TRAK ISOLATOR

Abstract: TRAKEUROPE DSW1059-A microwave isolator
Contextual Info: Isolator Dual Junction Drop-In Model: DSW1059-A Application - WIRELESS w Base Station w Filter Subsystems, Combiners, and Amplifiers w PCS1900/DCS1800, EGSM, TDMA, UMTS Benefits w Low Intermodulation w Excellent IM3 Performance Features w Integral Terminations