TE13004D Search Results

TE13005D

Abstract: ic 8853 TE13004D
Contextual Info: TE13004D • TE13005D TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features D Monolithic integrated C-E-free-wheel diode D HIGH SPEED technology D Planarpassivation D Very short switching times D Very low switching losses D Very low dynamic saturation

ir 9911

Abstract: TE13004D TE13005D
Contextual Info: TE13004D • TE13005D TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features D D D D D D D D Monolithic integrated C-E-free-wheel diode HIGH SPEED technology Planarpassivation Very short switching times Very low switching losses Very low dynamic saturation

Contextual Info: Tem ic TE13004D • TE13005D Semiconductors Silicon NPN High Voltage Switching Transistor Features • • • • • • • • Monolithic integrated C-E-free-wheel diode HIGH SPEED technology Planar passivation Very short switching times Very low switching losses

TE13004D

Abstract: TE13005D
Contextual Info: TE13004D • TE13005D Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features D D D D D D D D Monolithic integrated C-E-free-wheel diode HIGH SPEED technology Planar passivation Very short switching times Very low switching losses Very low dynamic saturation

TE13004D

Abstract: TE13005D VCE10-1 ir 9911
Contextual Info: TE13004D • TE13005D Silicon NPN High Voltage Switching Transistor Features D D D D D D D D Monolithic integrated C-E-free-wheel diode HIGH SPEED technology Planar passivation Very short switching times Very low switching losses Very low dynamic saturation

E13005D

Abstract: transistor 13005D transistor 3005D transistor I 3005D 13005d LO 13005D TRANSISTOR 13004D 13005D TRANSISTOR TR 13005D w 13005d
Contextual Info: TE13004D • TE13005D Te m ic TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • M o n o lith ic in teg r a ted C - E -f r e e -w h e e l d io d e • H IG H S P E E D te c h n o lo g y • P la n a r p a ssiv a tio n •

Contextual Info: TE13004D • TE13005D wmmt Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Monolithic integrated C-E-free-wheel diode • HIGH SPEED technology • Planar passivation • Very short switching times • Very low switching losses

Diode j106

Abstract: SSP6N60 TD13002 BUD620 BUF620 BUF640A BUF642 BUF644 TD13003 TD13004
Contextual Info: Switching Power Transistors Part No. and Polarity NPN Operating Temperature: -65 o C to 150oC Maximum Ratings P TOT @ Tcase PNP IC VCES Characteristics V CEO tf @ IC hFE @ IC & VC E VCE SAT @ I C and h FE (W) (°C) (A) (V) (V) (µs) (A) (A) (V) (V) (A) BUD620

e 13009 f

Abstract: E13005 d13003 TE13005D
Contextual Info: Te m ic TELEFUN KEN Semiconductors General Inform ation Selector Guide, Alphanumeric Index BUD86 • B U D 8 7 .Page 29

equivalent transistor bul128

Abstract: HALL EFFECT 21E equivalent of transistor 2sc4106 2sC2335 TRANSISTOR equivalent Shortform Transistor Guide BUL208 BUF656B KSE13007 equivalent BUD620 BUL128 replacements
Contextual Info: Bipolar Power Transistors Data Book 1997 General Information Data Sheets Addresses Table of Contents General Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

T0220

Abstract: D-PAK BUF654 DPAK TDI30 BUD630
Contextual Info: T em ic S e m i c o n d u c t o r s T02S2 DPAK T0251 DPAK T0220 Bipolar Power Transistors Maximum Ratings Part Number Plot at Tease W °c Electrical Characteristics k: VCES VCEG A V V tf at fis hpE k: A at Ic and Vce A ! v CEsat at Ic and hpE V V A i Package

JFET TRANSISTOR REPLACEMENT GUIDE j201

Abstract: UA6538 DC motor speed control using 555 and ir sensor U2740B-FP UAA145 CQY80 U2840B tcrt9050 TCDF1910 sod80 smd zener diode color band
Contextual Info: Semiconductors Technical Library March 1996 Back Products Overview Communications Automotive Computer Industrial Broadcast Media Aerospace & Defense Communications Applications Telephone ICs Type U3750BM–CP Package 44–pin PLCC Function One chip telephone