TEKELEC DIODE Search Results

9858A

Contextual Info: TEKELEC PRODUCTION AND QUALITY The basis of TEKELEC MICROWAVE Quality Assurance is MIL Q 9858, via its set of Quality Program Requirements. Beyond these written requirements, TEKELEC MICROWAVE conceives “quality" as satisfaction of the Custom er and the End-User of the Customer's services. To this end, the

Tekelec Temex

Abstract: Tekelec HP 8753 Tekelec diode WILTRON HP83620A
Contextual Info: RF & MICROWAVE MODULES Introduction Introduction TEKELEC TEMEX designs, develops and manufactures standard and custom IF, RF and microwave modules for military and professional applications. TEKELEC TEMEX has the engineering ressources and production capacity of a large company, as well as the flexibility to rapidly deliver small quantities

Contextual Info: TEKELEC COMPONENTS bflE D MË ^ 0 0 3 7 6 7 00GG231 PIN DIODES ••SMS ATTENUATING SILICON PIN DIODES CHIP AND PACKAGED WOOES I 1 The table below presents a single set of values from the variety of customer options available for this series of passivated PIN diodes. TEKELEC MICROWAVE uses Its proprietary technology, which enables

Tekelec

Contextual Info: Bill TEKELEC MICROWAVE conceives, develops, manufactures and markets its own broad range of microwave components and devices for telecommunications, radar, scientific and industrial applications : • • • • • • microwave silicon semiconductor diodes

Tekelec Temex

Abstract: Tekelec step recovery diodes
Contextual Info: MICROWAVE SILICON COMPONENTS Introduction INTRODUCTION This part of the Microwave section presents TEKELEC TEMEX’s product lines including: • receiving diodes • control diodes • tuning varactors • multiplier varactors • step recovery diodes •

Contextual Info: SILICON PIN DIODES Microwave applications Attenuator silicon PIN diodes Description The table below presents a single set of values from the variety of customer options available for this series of passivated PIN diodes. TEKELEC TEMEX uses its proprietary technology, which enables the

M208

Contextual Info: TEKELEC COMPONENTS bflE '10G37Ô7 000G232 3fl2 D PIN DIODES SILICON LIMITER PIN DIODES These passivated mesa PIN diodes have a thin I layer, This series of diodes is available as chips and in hermetic ceram ic packages. They operate as power dependent variable resistances and provide

SI-340

Contextual Info: DESIGN AID Unpacking chips from waffle-pack containers For maximum protection in transit, TEKELEC MICROWAVE regularly uses waffle-pack containers see figure 1 to hold product-bearing chips. TO AVOID DAMAGE OR LOSS when unpacking, proceed as follows. Opening the container

JM SOT23

Abstract: 4C SOT23-4
Contextual Info: ATTENUATOR SILICON PIN DIODES The table below presents a single set of values from the variety of customer options available for this series of passivated PIN diodes. TEKELEC COMPONENTS uses Its proprietary technology, which enables the customer to Incorporate characteristics specific to the application involved, e.g. c a p a ­

tekelec

Contextual Info: I FK E I FC M IC . ’O U A V E This c a ta lo g presents TEKELEC MICROWAVE p ro d u c t lines including : • receiving diodes • control diodes • tuning varactors • m ultiplier varactors • step recovery diodes • high v o lta g e PIN a n d NIP diodes

C1156

Contextual Info: bflE I> TEKELEC COMPONENTS • T G 0 3 7 Û 7 D D G D B M M 0T4 SILICON SCHOTTKY DIODES Q U A D SILICO N BEAM LEAD SCHOTTKY BARRIER DIODES Q uad silicon beam lead Schottky barrier diodes are available In star and ring configurations low drive level versions , principally for use In double balanced mixers. Their monolithic construction ensures close

DH493

Abstract: 40144 DH-493 EH40144 DH40144
Contextual Info: PIN DIODES The ta b le b e lo w presents a single set o f values fro m th e v a rie ty o f c u s to m e r o p tio n s a v a ila b le fo r this series o f pa ssiva te d PIN diodes. TEKELEC MICROWAVE uses its p ro p rie ta ry te c h n o lo g y , w h ic h enab le s

snap-off diode

Contextual Info: TEKELEC V u C R O w iw r PARAMETER MEASUREMENTS Measurement principle M easurem ent aims to characterise the le a kag e current in reverse vo lta g e conditions as specified. Diagram / 1 Voltage generator V Diode under a test DUT V ; vr Explanation The v o lta g e d ro p (a t the a m m e te r plugs used for m easurem ent o f le a ka g e current lR) must be negligible

C82 diode

Abstract: tekelec diode bas32 501 CHB philips zener diode c18 philips zener diode c47 BAS32 sod80 d10/diode diode c82 DIODE C63
Contextual Info: Document reference: PCB reference: STEVAL-TDR007V1 Company: STMicroelectronics Index Quantity Reference C81 - C82 - C83 J1 R17 C7 - C34 - C42 - C58 C6 - C33 - C41 - C57 C5 - C32 - C40 - C56 - C78 - C79 C15 - C17 - C18 - C50 - C53 - C63 C38 - C46 - C67 - C71

SQM1150

Abstract: SQM1450 Tekelec Temex SMD-4 sqm1250 Tekelec diode Tekelec Temex Components
Contextual Info: SILICON PIN DIODES Low cost square ceramic package PIN diodes LOW COST SQUARE CERAMIC PACKAGE PIN DIODES Features Description • Low loss, low distortion • Low inductance • High reliability • Hermetically sealed package • Non rolling MELF design •

AT27273

Abstract: DSA00344764 k3224 1206 cms diode cms capacitor gsm Booster 22 pf TEKELEC TEKELEC tekelec 630 VJ1206Y104KXAT
Contextual Info: DB-915-12W 12W / 12V / 875-915 MHz PA using 1x PD55015S The LdmosST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 12 W min. with 12 dB gain over 875 - 915 MHz • 10:1 LOAD VSWR CAPABILITY

TEKELEC 302

Abstract: Tekelec Temex
Contextual Info: SILICON PIN DIODES SOT23 surface mount switching silicon PIN diodes SOT23 SURFACE MOUNT SWITCHING SILICON PIN DIODES Features Description • Low series resistance • Low capacitance • Fast switching diodes • Surface mount package • Tape and reel packaging available

transistor SMD 12W

Abstract: smd transistor code 12w smd transistor 12W 55 smd 501 transistor smd transistor 12W VJ1206Y104KXAT 12W smd transistor transistor smd hq Tekelec TA smd transistor 12W 74
Contextual Info: DB-915-12W 12W / 12V / 875-915 MHz PA using 1x PD55015S The LdmoST FAMILY General Features • EXCELLENT THERMAL STABILITY ■ COMMON SOURCE CONFIGURATION ■ POUT = 12W WITH 12 dB GAIN OVER 815 915 MHz ■ 10:1 LOAD VSWR CAPABILITY ■ BeO FREE AMPLIFIER

gold metal detectors

Abstract: Schottky diode wafer
Contextual Info: Schottky barrier diode technology Signal conditioning is the major application field for Schottky barrier d io d e s : speed switching, mixing, detecting, clipping and clamping. Frequency ranges from digital to m icrowave are supported. The outstanding characteristic of Schottky diode construction Is the barrier: a metal layer deposited

VJ1206Y104KXAT

Abstract: 501-CHB-100-JVLE 501 CHB SPECIFICATIONS 3224W103 3224W-103 501-CHB CMS TANTALE 501chb100jvle 501 CHB AT27273
Contextual Info: DB-915-12W 12W / 12V / 875-915 MHz PA using 1x PD55015S The LdmoST FAMILY General Features • EXCELLENT THERMAL STABILITY ■ COMMON SOURCE CONFIGURATION ■ POUT = 12W WITH 12 dB GAIN OVER 815 915 MHz ■ 10:1 LOAD VSWR CAPABILITY ■ BeO FREE AMPLIFIER

VJ1206Y104KXAT

Abstract: AT27273 501-CHB-470-JVLE 500-CHA-101-JVLE 3224W-103 501 CHB vj1206y104kxa 100NF 63V 501chb100jvle 3224W103
Contextual Info: DB-960-60W 60W / 26V / 925-960 MHz PA using 1x PD57070S The LdmoST FAMILY General Features • EXCELLENT THERMAL STABILITY ■ COMMON SOURCE CONFIGURATION ■ POUT = 60W WITH 13 dB GAIN OVER 925 960 MHz ■ 10:1 LOAD VSWR CAPABILITY ■ BeO FREE AMPLIFIER

TRIMMER capacitor 160 pF

Abstract: transistor BC337 TRIMMER capacitor 10-40 pf 22 pf trimmer capacitor 1n4007 mttf linear amplifier 470-860 Zener diode 9.1 470-860 mhz Power amplifier 5 w capacitor c3b TPV5055B
Contextual Info: MOTOROLA SC XSTRS/R F b3L7254 O I D Q W fc^E J> 037 HOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line U H F Lin ear P o w er TVansistor . . . d e sig n e d fo r o u tp u t sta g e s in B and IV & V T V tra n sm itte r am plifiers. Internal m a tc h in g o f b o th in p u t a nd o u tp u t a lo n g w ith u se o f a p u s h -p u ll p a c k a g e

diode LT 1n4007

Abstract: transistor BC337 bc337 transistor Zener diode 9.1 22 pf trimmer 100A1R3BP50 22 pf trimmer capacitor 100A101JP50 3 pin TRIMMER capacitor 1n4007 mttf
Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA TP V 5055B The RF Line UHF Linear Power Transistor 50 W — 470 to 860 MHz UHF LINEAR POWER TRANSISTOR NPN SILICON . . . designed fo r o u tp u t stages in Band IV & V TV tra n s m itte r a m plifiers. Interna! m a tch ­

Contextual Info: SILICON BEAM-LEAD SCHOTTKY MIXER DIODES, LOW BARRIER These diodes are glassed to reduce parasitic capacitance and strengthen the leads. The jf are offered In single or double diode configuration, C haracteristics at 25° C Test Conditions TYPE CASE 1 Single Double