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    TIP31 EQUIVALENT

    Abstract: tektronix p6019 TIP31B TIP31C EQUIVALENT
    Text: TIP31, TIP31A, TIP31B, TIP31C File Number 991 Epitaxial-Base, Silicon N-P-N VERSAWATT Transistors For Power-Amplifier and High-Speed-Switching Applications Features: • 40 W at 25°C case temperature ■ 5 A rated collector current ■ Min. h o f 3 MHz at 10 V, 500 mA


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    PDF TIP31, TIP31A, TIP31B, TIP31C TIP32-series RCA-TIP31 TIP31 TIP31Care TIP32 TIP31 EQUIVALENT tektronix p6019 TIP31B TIP31C EQUIVALENT

    TIP29 RCA

    Abstract: RCA TIP30
    Text: HARRIS SEMICOND SECTOR SbE D • 43G2E71 0040^42 b^ö W H A S TIP30, TIP30A, TIP30B, TIP30C File Number 988 7=3^7? Epitaxial-Base, Silicon P-N-P VERSAWATT Transistors For Power-Amplifier and High-Speed-Switching Applications F e a tu re s : ■ ■ u ■ 30 W at 25°C case temperature


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    PDF 43G2E71 TIP30, TIP30A, TIP30B, TIP30C TIP29-series RCA-TIP30, TIP30C TIP29 RCA RCA TIP30

    LB 11911

    Abstract: 1SS99 TA8709 ta8710 C984 Z-636 2N6467 2N6468 T0-213AA TO213AA
    Text: _ QÎ 3875081 G E SOLID STATE dT 01E , • File N um b er |3 ö 7S0 ö 1 17441 D 0017441 1 ~ S '? General-Purpose Power Transistors 388 2N6467, 2N6468 Silicon P-N-P « Medium-Power Transistors


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    PDF 2N6467, 2N6468 T0-213AA RCA-2N6467 2N6468Aare O-213AA TA8710, TA8709, LB 11911 1SS99 TA8709 ta8710 C984 Z-636 2N6467 2N6468 T0-213AA TO213AA

    TA7290

    Abstract: 2N5784 equivalent TA7270 TA7272 2N5783 2N5781 92SS-4J32 2N5782 Tektronix 2712 2N5783 HARRIS
    Text: H A RR IS S E M I C O N D S E C T O R 5bE D • 4 3 G 2 2 7 1 0 0 4 0 4 7 0 T46 H H A S 2N5781, 2N5782, 2N5783, 2N5784, 2N5785, 2N5786 Rie Number 413 n = 3 3 -o / Silicon N-P-N and P-N-P Epitaxial-Base Complementary-Symmetry T ransistors General-Purpose Types for Switching and


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    PDF 2N5781, 2N5782, 2N5783, 2N5784, 2N5785, 2N5786 2N57B2, 2NS783 TA7290 2N5784 equivalent TA7270 TA7272 2N5783 2N5781 92SS-4J32 2N5782 Tektronix 2712 2N5783 HARRIS

    BDX33c equivalent

    Abstract: P6019 BDX33D equivalent X33B BDX33 69-6R
    Text: BDX33, BDX33A, BDX33B, BDX33C, BDX33D HARRIS SEMICOND SECTOR SbE D File Number • 4 3 0 2 8 7 1 O D M O b l l S34 « H A S 10-Ampere N-P-N Darlington Power Transistors 7 ^ 3 3 TERMINAL DESIGNATIONS 45-60-80-100-120 Volts, 70 Watts Gain of 750 at 4 A B DX33, BDX33A


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    PDF BDX33, BDX33A, BDX33B, BDX33C, BDX33D 10-Ampere BDX33A) BDX33D) BDX33c equivalent P6019 BDX33D equivalent X33B BDX33 69-6R

    92CS-2GS66

    Abstract: P6019 TA8709 2N6467
    Text: File N u m be r 2N6467, 2N6468 888 Silicon P-N-P Medium-Power Transistors TERMINAL DESIGNATIONS F L A N G E ! G eneral-Purpose Types for Sw itching Application Features: • Low saturation voltages ■ M axim um -safe-area-of-operation curves JEDEC TO-213AA


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    PDF 2N6467, 2N6468 O-213AA TA8710, TA8709, 2N6467 92CS-26969 2N6468. 92CS-2GS66 P6019 TA8709 2N6467

    s43a

    Abstract: 2N6533 2N6531 2N6530 2N6532 1000 watts schematic diagram of solid state audio amplifier RCA 0798 2N6532 RCA A09 monolithic amplifier
    Text: 3Ö750Ö1 DQ17HS3 0 | } .u a rn n g io n P o w e r Transistors File Number 873 2N6530, 2N6531, 2N6532, 2N6533 8-Ampere N-P-N Darlington Power Transistors 80, 100, 120 Volts, 60 Watts Gain of 1000 at 5 A 2N6530, 2N6532 Gain of 1000 at 3 A (2N6533) Gain of 500 at 3 A(2N6531)


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    PDF 2N6530, 2N6531, 2N6532, 2N6533 2N6532) 2N6533) 2N6531) 92CS-39969 O-220AB s43a 2N6533 2N6531 2N6530 2N6532 1000 watts schematic diagram of solid state audio amplifier RCA 0798 2N6532 RCA A09 monolithic amplifier

    TA8724

    Abstract: 2N6248 transistor 2n6246 2N6469
    Text: 2N6246, 2N6247, 2N6248, 2N6469 H A RR IS S E M I C O N D S E C T O R File N u m b e r SbE D 677 I 430 2 57 1 0 0 4 0 5 2 0 3T3 « H A S Silicon P-N-P Epitaxiai-Base, High-Power Transistors TERMINAL DESIGNATIONS General-Purpose Types of Switching and Linear-Amplifier Applications


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    PDF 2N6246, 2N6247, 2N6248, 2N6469 O-204AA 2N6246 2N6469 P-6019 TA8724 2N6248 transistor 2n6246

    TA7719

    Abstract: TA7719 P 2n6213 rca 2N6214
    Text: 3875081 G E SOLID STATE High-Voltage Power Transistors D ËT|3fl7SD ai 0 0 1 7 ia4 7 W~D _ S_ 2N6211, 2N6212, 2N6213, 2N6214 File Number 507 High-Voltage Medium-Power Silicon P-N-P Transistors For Switching and Amplifier Applications in Military,


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    PDF 2N6211, 2N6212, 2N6213, 2N6214 2N6211) 2N6214« 2N62II, TA7719 TA7719 P 2n6213 rca 2N6214

    tektronix p6019

    Abstract: ORP60
    Text: IN STR iO PTO J bE '8 9 6 1 7 2 6 T E X A S Q0 3 b b 7 S I N S T R ÎpPTO 62C 36675 BUY69A, BUY69B, BUY69C N-P-N SILICON POWER TRANSISTORS T -' 3 OCTOBER 198 2 - R EV ISED O CTOBER 1984 1 0 0 W a t 2 5 ° C C a s e Tem perature 10 A Continuous Collector Current


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    PDF BUY69A, BUY69B, BUY69C T-33-/3 tektronix p6019 ORP60

    2n6250

    Abstract: Si948 2n6251
    Text: File Number 523 HARRIS SEMICON] SECTOR 2N6249, 2N6250, 2N6251 SbE D 43G2571 004Q5B7 75Ö H H A S ^ 450-V, 30-A, 175-W Silicon N-P-N Switching Transistors 3 5 - / 9 For Switching Applications in Industrial and Commercial Equipment Features: • High voltage ratings:


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    PDF 2N6249, 2N6250, 2N6251 2N62S1) 2W6250) 2N6249) 2N6250 2N6251 T0-204AA Si948

    automotive ignition tip162

    Abstract: tipi transistor equivalent 369-41 369-42 equivalent to tip162 P6019 P6020 TIP160 tektronix p6019 tipi transistor
    Text: TEXAS INSTR ÌOPTO> 8961726 TEXAS IN STR 003^.^30 dìT| OPTO 62C 36 93 8 TIPI 60, TIPI 61, TIPI 62 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS REVISED OCTOBER 198 4 50 W at 100°C Case Temperature T—33-29 10 A Rated Continuous Collector Current


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    PDF T-33-29 218AA TIP160 TIP161 TIP162 TIP160, TIP161, TIP162 automotive ignition tip162 tipi transistor equivalent 369-41 369-42 equivalent to tip162 P6019 P6020 tektronix p6019 tipi transistor

    TIP662

    Abstract: P6019 TIP660 TIP661 tektronix p6019 1N914 2N6127 524I transistor tip662
    Text: TEXAS I NS TR { OPTO} 8961726 TEXAS TÉ I NS TR D F | ò T b l7 E b □ □ 3 b clfl5 0 62C 3 6 9 8 2 COPTO TIP660, TIP661, TIP662 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS R E V IS E D O C T O B E R 1 9 8 4 T-33-29 8 0 W a t 1 0 0° C Case Temperature


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    PDF 0PT03- 0Tbl72b TIP660, TIP661, TIP662 80Wat T-33-29 TIP660 TIP661 P6019 tektronix p6019 1N914 2N6127 524I transistor tip662

    2n6489

    Abstract: 2N6488 power amplifier circuit
    Text: 2N6486, 2N6487, 2N6488, 2N6489, 2N6490, 2N6491 HARRI S SEniCOND SECTOR SbE D • File Number 4302271 üü40Sbb 678 4Tfl H H A S 15-A, 75-W, Silicon N-P-N and P-N-P Epitaxial-Base VERSAWATT Transistors Complementary Pairs for General-Purpose Switching and Amplifier Applications


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    PDF 2N6486, 2N6487, 2N6488, 2N6489, 2N6490, 2N6491 40Sbb RCA-2N6486-- 2n6489 2N6488 power amplifier circuit

    LT 5247

    Abstract: LT 5247 H LT 5245 LT 5248 LT 5245 TRANSISTOR hz 524-2 generator 380v schematic LT 5242 H LT 5241
    Text: TE XA S IN S T R { O PT O} 8961726 TEXAS bÊ IN STR Î F | ÒTbl72Li □□ 3b clfl5 0 6 2C OPTO) 36982 D TIP660, TIP661, TIP662 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS R E V IS E D O C T O B E R 1 9 8 4 T-33-29 8 0 W a t 100° C Case Temperature


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    PDF Tbl72Li TIP660, TIP661, TIP662 T-33-29 LT 5247 LT 5247 H LT 5245 LT 5248 LT 5245 TRANSISTOR hz 524-2 generator 380v schematic LT 5242 H LT 5241

    p6020

    Abstract: TIP664 TIP-663 TIP663 TIP-665
    Text: TEXAS IN STR ~b2 -COPTO 8 9 6 1 7 2 6 TEXAS INS TR D l F | fl'iblTHL: □ □ 3 b cl ci0 1 <OPTO 62C 3 6 9 9 0 TIP663, TIP664, TIP665 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS REVISED OCTOBER 198 4 • 150 W at 100 ° C C ase Temperature T-33-29


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    PDF TIP663, TIP664, TIP665 hFE---250 T-33-29 p6020 TIP664 TIP-663 TIP663 TIP-665

    2N8491

    Abstract: 2N648B 2N6491 equivalent TA8327 equivalent 2n6488 tektronix 454 TA8328 2n8491t 2N6486 equivalent 2n6490
    Text: f ' G E SOLIP STATE 3875081 □ 1 DE I3fl7S0fll 00174S0 E G E SOLID STATE 0 7 È ~ 1 7 4 5 Ò -D T '? ? '/ * G eneral-Purpose Power ' - — 3 2 > '< z / 2N6486, 2N6487, 2N6488, 2N6489, 2N6490, 2N6491


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    PDF 00174S0 ---01M7450--D 2N6486, 2N6487, 2N6488, 2N6489, 2N6490, 2N6491 RCA-2N6486â 2N6491 2N8491 2N648B 2N6491 equivalent TA8327 equivalent 2n6488 tektronix 454 TA8328 2n8491t 2N6486 equivalent 2n6490

    2N6489 RCA

    Abstract: 2N6490 RCA RCA 2N SOLID STATE TRANSISTORS 2N6488 power amplifier circuit 2n6489
    Text: G E SO LI» STATE 3875081 CÌ E □1 SOLID DE I 3 f l 7 S 0 f l l STATE 00174S0 E O T T T t Ï S Ô - D ~ ' f ' ? ? - / 3 G en eral-P u rp ose P ow er T ran sisto rs_ —* ' * * •"T - 3 -3 * ^ ? / 2N6486, 2N6487, 2N6488, 2N6489, 2N6490, 2N6491


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    PDF 00174S0 2N6486, 2N6487, 2N6488, 2N6489, 2N6490, 2N6491 RCA-2N6486--2N6491 2N6489 RCA 2N6490 RCA RCA 2N SOLID STATE TRANSISTORS 2N6488 power amplifier circuit 2n6489

    7420A

    Abstract: 7.5b 35 2N5840 2N5839
    Text: File Number 410 2N5838, 2N5839, 2N5840 High-Voltage, High-Power Silicon N-P-N Power Transistors For Switching and Linear Applications in Military, Industrial, and Commercial Equipment Features: • M aximum safe-area-of-operation curves m Low saturation voltages


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    PDF 2N5838, 2N5839, 2N5840 2N5840] 2N5839] 2N5838] 2N5839 2N5840* T0-204A 7420A 7.5b 35 2N5840

    TIP665

    Abstract: 2N6128 TIP663 TIP664 tip66 TIP6 P66S
    Text: TEXAS IN ST R hS -COPTO} 8961726 TEXAS I NSTR D lf| □ □ 3 b cl ci 0 COPTO 62C 3 6 9 9 0 D TIP663, TIP664, TIP665 N-P-N DARLINGTON-CONIMECTED SILICON POWER TRANSISTORS REVISED OCTOBER 1 9 8 4 • 15 0 W at 1 0 0 °C Case Temperature T-33-29 2 0 A Continuous Collector Current


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    PDF TIP663, TIP664, TIP665 hFE-250 T-33-29 TIP663 TIP664 7526s TIP665 2N6128 tip66 TIP6 P66S

    TIP55A

    Abstract: TIP58A d03b TIP55 TIP142 40960 rca TIP56A TIP57A TIP56 TIP5
    Text: TEXAS INSTR -COPTO* 89^1726 TEXAS "b5 INSTR DE 00 3 ^5 3 ^ COPTO 62C 36836 TIP55A, TIP56A, TIP57A, TIP58A N-P-N SILICON POWERJRANSISTORS 3 3 ~ * l R EV ISED O CTO BE R 1 9 8 4 Min V(BR)CEO 2 5 0 v to 4 0 0 V 50 W a t 100 ° C C ase Temperature 10 A Peak Collector Current


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    PDF flcit117Eb 003bfl3b TIP55A, TIP56A, TIP57A, TIP58A O-218AA TIP55A TIP56A TIP57A d03b TIP55 TIP142 40960 rca TIP56 TIP5

    Untitled

    Abstract: No abstract text available
    Text: 2N6486, 2N6487, 2N6488, 2N6489, 2N6490, 2N6491 File N um ber 678 15-A, 75-W, Silicon N-P-N and P-N-P Epitaxial-Base VERSAWATT Transistors Complementary Pairs for General-Purpose Switching and Amplifier Applications Features: • M a x im u m sa fe -a re a -o f-o p e ra tio n curves


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    PDF 2N6486, 2N6487, 2N6488, 2N6489, 2N6490, 2N6491

    TA8724

    Abstract: 2N6247
    Text: 2N6246, 2N6247, 2N6248, 2N6469 File Number Silicon P-N-P Epitaxial-Base, High-Power Transistors 677 TERMINAL DESIGNATIONS General-Purpose Types of Switching and Linear-Amplifier Applications Features: • High dissipation capability: 125 W at 25° C ■ Low saturation voltages


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    PDF 2N6246, 2N6247, 2N6248, 2N6469 O-204AA 92CS-24702RI P-6019 92CS-I9586R3 TA8724 2N6247

    TA7290

    Abstract: 2N5781 TA7272 2N5784 equivalent 2N5783
    Text: 2N5781, 2N5782, 2N5783, 2N5784, 2N5785, 2N5786 File Number 413 Silicon N-P-N and P-N-P Epitaxial-Base Complementary-Symmetry T ransistors General-Purpose Types for Switching and Linear-Amplifier Applications Features: • ■ • ■ Low saturation voltages


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    PDF 2N5781, 2N5782, 2N5783, 2N5784, 2N5785, 2N5786 2N5783 TA7290 2N5781 TA7272 2N5784 equivalent