high power fast recovery diodes 5 ns
Abstract: telefunken rr 200
Text: BYT08P/1000A TELEFUNKEN Semiconductors Fast Recovery Silicon Power Rectifier Features D Multiple diffusion D Mesa glass passivated D Low switch on power losses D Good soft recovery behaviour D Fast forward recovery time D Low reverse current D Very low turn on transient peak voltage
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BYT08P/1000A
D-74025
high power fast recovery diodes 5 ns
telefunken rr 200
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telefunken rr 200
Abstract: No abstract text available
Text: BYT12P/1000A TELEFUNKEN Semiconductors Fast Recovery Silicon Power Rectifier Features D Multiple diffusion D Mesa glass passivated D Low switch on power losses D Good soft recovery behaviour D Fast forward recovery time D Fast reverse recovery time D Low reverse current
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BYT12P/1000A
D-74025
telefunken rr 200
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Untitled
Abstract: No abstract text available
Text: BYT08P/1000A Fast Recovery Silicon Power Rectifier Features D D D D D D D D Multiple diffusion Mesa glass passivated Low switch on power losses Good soft recovery behaviour Fast forward recovery time Low reverse current Very low turn on transient peak voltage
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BYT08P/1000A
D-74025
12-Dec-94
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Untitled
Abstract: No abstract text available
Text: BYT12P/1000A Fast Recovery Silicon Power Rectifier Features D D D D D D D D D Multiple diffusion Mesa glass passivated Low switch on power losses Good soft recovery behaviour Fast forward recovery time Fast reverse recovery time Low reverse current Very low turn on transient peak voltage
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BYT12P/1000A
D-74025
12-Dec-94
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Untitled
Abstract: No abstract text available
Text: BYT12P/1000A Vishay Telefunken Super Fast Recovery Silicon Power Rectifier Features D D D D D D D D Multiple diffusion Low switch on power losses Good soft recovery behaviour Fast forward recovery time Fast reverse recovery time Low reverse current Very low turn on transient peak voltage
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BYT12P/1000A
D-74025
27-Sep-00
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9399
Abstract: telefunken rr 200
Text: BYT12P/1000A Vishay Telefunken Fast Recovery Silicon Power Rectifier Features D D D D D D D D Multiple diffusion Low switch on power losses Good soft recovery behaviour Fast forward recovery time Fast reverse recovery time Low reverse current Very low turn on transient peak voltage
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Original
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BYT12P/1000A
D-74025
24-Jun-98
9399
telefunken rr 200
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Untitled
Abstract: No abstract text available
Text: BYT08P/1000A Vishay Telefunken Fast Recovery Silicon Power Rectifier Features D D D D D D D Multiple diffusion Low switch on power losses Good soft recovery behaviour Fast forward recovery time Low reverse current Very low turn on transient peak voltage Very good reverse current stability at high temperature
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BYT08P/1000A
D-74025
24-Jun-98
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Untitled
Abstract: No abstract text available
Text: BYT08P/1000A Vishay Telefunken Super Fast Recovery Silicon Power Rectifier Features D D D D D D D Multiple diffusion Low switch on power losses Good soft recovery behaviour Fast forward recovery time Low reverse current Very low turn on transient peak voltage
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BYT08P/1000A
D-74025
27-Sep-00
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CA6V
Abstract: No abstract text available
Text: B atte rie rö h re d ire k t g eh eizt TELEFUNKEN T 113 Ele k tro m e te rrö h re 3 100 uf lf Heizspannung Heizstrom V mA Thorierte W olfram -Kathode Norm aler Arbeitspunkt 10 10 ua Anodenspannung Raumladegitterspannung Gittervorspannung Anodenstrom Steilheit
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BUF672
Abstract: transistor BUF672
Text: BUF672 Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • • • • • • • • • Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation
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BUF672
20-Jan-99
BUF672
transistor BUF672
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BUF725
Abstract: No abstract text available
Text: BUF725D Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • • • • • • • • • • Monolithic integrated C-E-free-wheel diode Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate
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BUF725D
20-Jan-99
BUF725
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BUF725D
Abstract: No abstract text available
Text: _ BUF725D Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Monolithic integrated C-E-free-wheel diode • Simple-sWitch-Off Transistor SWOT • HIGH SPEED technology • Planar passivation • 100 kHz switching rate
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BUF725D
20-Jan-99
20-Jan-99
BUF725D
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Untitled
Abstract: No abstract text available
Text: BUF653 Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • HIGH SPEED technology • Planar passivation • 100 kHz switching rate • Very low switching losses • Very low dynamic saturation
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BUF653
di-970-5600
20-Jan-99
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Untitled
Abstract: No abstract text available
Text: BUF636A Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • • • • • • • • • Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation
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BUF636A
20-Jan-99
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TEA1007
Abstract: 1007 ignition triac control circuit diagram telefunken 1007 vinax
Text: Tem ic TEA1007 S e m i c o n d u c t o r s Simple Phase-Control Circuit Description The integrated circuit TEA 1007 is designed as a general phase-control circuit in bipolar technology. It has an internal supply voltage limitation. With typical 150 mA ignition pulse, it is possible to determine the phase shift
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TEA1007
TEA1007
28-May-96
1007 ignition
triac control circuit diagram
telefunken 1007
vinax
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Untitled
Abstract: No abstract text available
Text: BUF650 Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • • • • • • • • • Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation
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BUF650
20-Jan-99
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SR 13009
Abstract: E 13009 e13009 transistor sr 13009 transistor E 13009 D 13009 K 13008 TRANSISTOR E 13009 L e 13009 f J 13009 - 2
Text: Tem ic TE13008 • TE13009 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • HIGH SPEED technology • High reverse voltage • Power dissipation Pu,| = 100 W • Glass passivation • Short switching times Applications Electronic lamp ballast circuits
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TE13008
TE13009
SR 13009
E 13009
e13009
transistor sr 13009
transistor E 13009
D 13009 K
13008 TRANSISTOR
E 13009 L
e 13009 f
J 13009 - 2
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Untitled
Abstract: No abstract text available
Text: BUD630 wmmt Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • • • • HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation
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BUD630
BUD630-SMD
20-Jan-99
BUD630
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A65 smd transistor
Abstract: transistor smd za
Text: BUD700D wmmt Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Monolithic integrated C-E-free-wheel diode • • • • • Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate •
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BUD700D
BUD700D
20-Jan-99
A65 smd transistor
transistor smd za
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Untitled
Abstract: No abstract text available
Text: BUF630 Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • • • • • • • • • Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation
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BUF630
20-Jan-99
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telefunken rr-100
Abstract: DTS-32
Text: T em ic BYT08P/1000A S e m i c o n d u c t o r s Fast Recovery Silicon Power Rectifier Features • Multiple diffusion • Mesa glass passivated • Low switch on power losses • Good soft recovery behaviour • Fast forward recovery time • Low reverse current
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BYT08P/1000A
12-Dec-94
telefunken rr-100
DTS-32
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BUF630
Abstract: No abstract text available
Text: _ BUF630 Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • HIGH SPEED technology • Planar passivation • 100 kHz switching rate • Very low switching losses
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BUF630
20-Jan-99
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Untitled
Abstract: No abstract text available
Text: BUF620 Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • HIGH SPEED technology • Planar passivation • 100 kHz switching rate • Very low switching losses • Very low dynamic saturation
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BUF620
20-Jan-99
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BUF650
Abstract: NPN HIGH VOLTAGE SWITCHING
Text: _ BUF650 Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • HIGH SPEED technology • Planar passivation • 100 kHz switching rate • Very low switching losses
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BUF650
20-Jan-99
NPN HIGH VOLTAGE SWITCHING
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