TESO Search Results

2SC520A

Abstract: 2SA657A TOSHIBA TV IC regulator 2SA656A 2SC521A 2SA658A tv toshiba 110723 2SC519A AC73
Contextual Info: TOSHIBA ~5h {DISCRETE/OPTO} 9097250 T O S H IB A t>6L D I S C R E T E /O PTO SILICO N PN P.TRIPLE D IFFU SED MAS TY PE d F | S O T TESO □ □ 0 7 S E C1 J 07229 2SA656A 2SA657A 2SA658A - 23- 2 / 1 N U U S T K L A L AL'fl. l U A TlUNb Unit in mm 0 85.0 MAX.,

Contextual Info: SUT041G Dual NPN Bipolar transistor Descriptions • General purpose amplifier • Recommended for LED Drive Application Features • Thermally Enhanced Power PKG • Low saturation: VCE sat = 0.5V Max • 2 NPN chips in TESOP-8 Package TESOP-8 Ordering Information

burg pin

Contextual Info: AMP 1 4 7 0 -1 5 7 -7 3 11L0CAB 1DJ 5 R E V ISIO N S F ZON E V %/ LTR A /?. P e u is e o AZ ADD / 7086 REVISED £ - 3 i ¿> oveo A PPR O V ED DATE D E S C R IP T IO N i2£3a > V - V 'f/s* db 7 -a 6 AB-teso A l EC N AB 1 6 6 5 »fc/a &/ RKS B .0 8 7 . 2

Contextual Info: SUT061G Dual NPN Bipolar transistor Descriptions • General purpose amplifier • Recommended for LED Drive Application Features • Thermally Enhanced Power PKG • Low saturation: VCE sat = 0.4V Max • 2 NPN chips in TESOP-8 Package TESOP-8 Ordering Information

Contextual Info: SUT121G Dual NPN Bipolar transistor Descriptions • General purpose amplifier • Recommended for LED Drive Application Features • Thermally Enhanced Power PKG • Low saturation: VCE sat = 0.5V Max • 2 NPN chips in TESOP-8 Package TESOP-8 Ordering Information

Micro Switch Actuator-Switch

Contextual Info: M I C R O S WI T C H a orvisiotr or w n iw o u w iM n w n i tesourot company ACTUATOR-SWITCH |f¥ | fùtfott, UUH9H *"*1 JE-4 FEO. MFR. CODE 9 1 9 2 9 I U J Zui II LO A SR9466 L S 0 i 7 f£B 61 V* B CO47771 17 S lii1 8 0 C C074078 LJ f 2 5 NOV 92 ¡ 5 0 C074078 $

Contextual Info: A R TESOY* N E C H N O L O>W • G g Ii BXA1S SERIES E Triple output S • Pin-compatible with ES/XC and BXA30 series • Designed to meet telecom power supply interface standard ETS300-132-2 • UL, VDE and CSA safety approvals • VDE0878 and EN55022 conducted emissions level A

NFC10-12S05

Contextual Info: A R TESOŸ<N E C H N O L O V> MG G I NFC10 SERIES E S Single and dual output • • • • • • • 10 Watts output power Power density 13.3W/in3 2:1 input voltage range UL, CSA and VDE safety approvals 48V input units Overvoltage protection Extended operating temperature range

Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA T i D e J “la^TESO D 0 1 7 2 7 S Q 990 <DISCRETE/OPTO 17275 ‘Ö T - 4 ^ 3 3 TLR2327, TLR4322 RED COLOR 4 DIGITS LED DISPLAY • Fo r Us e o f static drive connections. • 45 m m 1.8a) character height, each segment is diffused and un if or ml y display.

OED-ST-1KL3B

Contextual Info: discrete sensors phototransistors OED-ST-1KL3A 1Ê Limits of Sate Operation Vceo t-opr V Max (mW)Max (°C) Package Style •'by'-*; -5 00- V V i ' W - ' V Clear Lens TO-18 2 Leads 40 100 teso @ 1 0 V ceo <nA) Max -25 ~ + 85 100 '\ A \ V Ic 0EMTTCB — 7 ^ —

Contextual Info: SUT061G Dual NPN Bipolar transistor Descriptions • General purpose amplifier • Recommended for LED Drive Application Features • Thermally Enhanced Power PKG • Low saturation: VCE sat = 0.4V Max • 2 NPN chips in TESOP-8 Package TESOP-8 Ordering Information

Contextual Info: SUT041C Dual NPN Bipolar transistor Descriptions • General purpose amplifier • Recommended for LED Drive Application Features • Thermally Enhanced Power PKG • Low saturation: VCE sat = 0.5V Max • 2 NPN chips in TESOP-8M Package TESOP-8M Ordering Information

Contextual Info: discrete sensors phototransistors 0ED-ST-8L Peeiwoe Style T-3mm Lead Frame Limits of Safe Operation VCEO t-opr PC V M ax (mW) Max (°C) 20 75 -20 ~ + 80 Len» Clear Epoxy teso @ 10 V c e o (nA) Max 100 Ic (mA) @ E\t ~ 1000 L X tr/tf Min Typ Mux V c e (V )

Contextual Info: SUT121G Dual NPN Bipolar transistor Descriptions • General purpose amplifier • Recommended for LED Drive Application Features • Thermally Enhanced Power PKG • Low saturation: VCE sat = 0.5V Max • 2 NPN chips in TESOP-8 Package TESOP-8 Ordering Information

Contextual Info: SUT041G Dual NPN Bipolar transistor Descriptions • General purpose amplifier • Recommended for LED Drive Application Features • Thermally Enhanced Power PKG • Low saturation: VCE sat = 0.5V Max • 2 NPN chips in TESOP-8 Package TESOP-8 Ordering Information

Contextual Info: SUT161G Dual NPN Bipolar transistor Descriptions • General purpose amplifier • Recommended for LED Drive Application Features • Thermally Enhanced Power PKG • Low saturation: VCE sat = 0.5V Max • 2 NPN chips in TESOP-8 Package TESOP-8 Ordering Information

Contextual Info: SUT161G Dual NPN Bipolar transistor Descriptions • General purpose amplifier • Recommended for LED Drive Application Features • Thermally Enhanced Power PKG • Low saturation: VCE sat = 0.5V Max • 2 NPN chips in TESOP-8 Package TESOP-8 Ordering Information

Contextual Info: TO SHIBA 2SK1359 Field Effect Transistor U nit in m m Silicon N Channel MOS Type tc-MOS 11.5 15.9MAX High Speed, High Current DC-DC Converter, 032±O2 & Relay Drive and Motor Drive Applications Features • Low Drain-Source ON Resistance cJ " Rds(ON) = 3-OQ (Typ.)

UFN432

Abstract: mosfet UFN432 UFN 432 UFN431 UFN433
Contextual Info: POWER MOSFET TRANSISTORS 500 Volt, 1.5 Ohm N-Channel UFN430 UFN431 UFN432 UFN433 FEATURES DESCRIPTION • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosiom and a high transconductance.

Contextual Info: TIM7785-30SL FEATURES: • LOW INTERMODULATION DISTORTION IM3 = -45 dBc at Po = 34.5 dBm, Single Carrier Level ■ HIGH POWER PldB = 45 dBm at 7.7 GHz to 8.5 GHz ■ HIGH EFFICIENCY 77 add = 34 % at 7.7 GHz to 8.5 GHz ■ HIGH GAIN G-idB = 6.0dB at 7.7 GHz to 8.5 GHz

GW50

Contextual Info: MG30H2DM1 MG30H2YM1 GTR MODULE SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING A P P L I C A T I O N S . MOTOR CONTROL A P P L I C A T I O N S . • The Drain is Isolated from Case. • 2 MOS FETs are Built-in to 1 Package. • With Built-in Free Wieeling Diode .:

YTF531

Abstract: th204
Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOS i i YTF531 HIGH S P E E D , H I G H CURRENT SW ITCHIN G A P P L I C A T I O N S . IN D USTRIAL A P P LIC A TIO N S CHO PPER R E G U L A T O R , D C - O C C ON VER TER ANO HOTOR U n it DR IVE A P P L I C A T I O N S .

Contextual Info: TO SHIBA TPC8302 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-MOSVI TPC8302 LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS Unit in mm NOTE BOOK PC PORTABLE MACHINES AND TOOLS 8 5 RUHR" 2.5V Gate Drive. Low Drain-Source ON Resistance m O

Contextual Info: GTR MODULE SILICON N CHANNEL MOS TYPE MG30D2DM1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FEATURES: . The Drain is Isolated from Case. . 2 MOS FETs are Built-in to 1 Package. . With Built-in Free Wheeling Diode. . Low Drain-Source ON Resistance